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1. 发明授权

US06610354B2 Plasma display panel with a low k dielectric layer 失效
公开(公告)号：US06610354B2
公开(公告)日：2003-08-26
申请号：US09886174
申请日：2001-06-18
申请人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
发明人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
IPC分类号： C23C1640
CPC分类号： H01J11/38 , H01J11/12
摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.

2. 发明授权

US6055927A Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology 失效
公开(公告)号：US6055927A
公开(公告)日：2000-05-02
申请号：US782169
申请日：1997-01-14
申请人： Quanyuan Shang , Robert McCormick Robertson , Kam S. Law , Dan Maydan
发明人： Quanyuan Shang , Robert McCormick Robertson , Kam S. Law , Dan Maydan
IPC分类号： B08B7/00 , C23C16/42 , C23C16/44 , C23C16/52 , H01L21/205 , H01L21/3065 , H01L21/31 , C23C16/00
CPC分类号： C23C16/4405
摘要： An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.

3. 发明授权

US06825134B2 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow 有权
标题翻译：通过在连续气流中交替地脉冲前驱和高频功率沉积膜层
公开(公告)号：US06825134B2
公开(公告)日：2004-11-30
申请号：US10254627
申请日：2002-09-24
申请人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
发明人： Kam S. Law , Quanyuan Shang , William R. Harshbarger , Dan Maydan , Soo Young Choi , Beom Soo Park , Sanjay Yadav , John M. White
IPC分类号： H01L21471
CPC分类号： C23C16/45542 , C23C16/402 , H01L21/02164 , H01L21/02274 , H01L21/0228 , H01L21/3143 , H01L21/31612 , H01L21/31683 , H01L21/318 , H01L21/3185 , H01L21/32105 , H01L21/3211 , H01L29/66765
摘要： A method of film layer deposition is described. A film layer is deposited using a cyclical deposition process. The cyclical deposition process consists essentially of a continuous flow of one or more process gases and the alternate pulsing of a precursor and energy to form a film on a substrate structure.
摘要翻译：描述了膜层沉积的方法。使用循环沉积工艺沉积膜层。循环沉积过程基本上由一种或多种工艺气体的连续流动以及前体和能量的交替脉冲组成在衬底结构上形成膜。

4. 发明授权

US07122962B2 Plasma display panel with a low K dielectric layer 失效
标题翻译：具有低K电介质层的等离子显示面板
公开(公告)号：US07122962B2
公开(公告)日：2006-10-17
申请号：US10460837
申请日：2003-06-11
申请人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
发明人： Kam S. Law , Quanyuan Shang , Takako Takehara , Taekyung Won , William R. Harshbarger , Dan Maydan
IPC分类号： H01J17/49
CPC分类号： H01J11/38 , H01J11/12
摘要： A plasma display panel including a low k dielectric layer. In one embodiment, the dielectric layer is comprises a fluorine-doped silicon oxide layer such as an SiOF layer. In another embodiment, the dielectric layer comprises a Black Diamond™ layer. In certain embodiments, a capping layer such as SiN or SiON is deposited over the dielectric layer.
摘要翻译：包括低k电介质层的等离子体显示面板。在一个实施例中，电介质层包括氟掺杂氧化硅层，例如SiOF层。在另一个实施例中，电介质层包括Black Diamond TM层。在某些实施例中，覆盖层例如SiN或SiON沉积在电介质层上。

5. 发明授权

US06468601B1 Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology 有权
标题翻译：使用远程等离子体源清洗技术的氮化硅沉积中白色粉末还原的装置和方法
公开(公告)号：US06468601B1
公开(公告)日：2002-10-22
申请号：US09523538
申请日：2000-03-10
申请人： Quanyuan Shang , Robert McCormick Robertson , Kam S. Law , Dan Maydan
发明人： Quanyuan Shang , Robert McCormick Robertson , Kam S. Law , Dan Maydan
IPC分类号： B05D306
CPC分类号： C23C16/4405
摘要： An apparatus and method for reducing the production of white powder in a process chamber used for depositing silicon nitride. Steps of the method include heating at least a portion of a wall of the process chamber; providing a liner covering a substantial portion of a wall of the process chamber; providing a remote chamber connected to the interior of the process chamber; causing a plasma of cleaning gas in the remote chamber; and flowing a portion of the plasma of cleaning gas into the process chamber. The apparatus includes a deposition chamber having walls; means for heating the walls, the means thermally coupled to the walls; a liner covering a substantial portion of the walls; a remote chamber disposed outside of the chamber; an activation source adapted to deliver energy into the remote chamber; a first conduit for flowing a precursor gas from a remote gas supply into the remote chamber where it is activated by the activation source to form a reactive species; and a second conduit for flowing the reactive species from the remote chamber into the deposition chamber.
摘要翻译：用于在用于沉积氮化硅的处理室中减少白色粉末的生产的装置和方法。该方法的步骤包括加热处理室壁的至少一部分; 提供覆盖所述处理室的壁的主要部分的衬垫; 提供连接到处理室内部的远程室; 导致远程室中的清洁气体的等离子体; 并将清洁气体的等离子体的一部分流入处理室。该装置包括具有壁的沉积室; 用于加热壁的装置，热耦合到壁的装置; 覆盖壁的大部分的衬垫; 设置在室外的远程室; 活化源，其适于将能量输送到所述远程室中; 用于将前体气体从远程气体供给流入远程室的第一导管，其中激活源被激活以形成反应性物质; 以及用于使反应物质从远程室流入沉积室的第二导管。

6. 发明授权

US5788778A Deposition chamber cleaning technique using a high power remote excitation source 失效
标题翻译：沉积室清洗技术采用高功率远程激励源
公开(公告)号：US5788778A
公开(公告)日：1998-08-04
申请号：US707491
申请日：1996-09-16
申请人： Quanyuan Shang , Kam S. Law , Dan Maydan
发明人： Quanyuan Shang , Kam S. Law , Dan Maydan
IPC分类号： B08B7/00 , C23C16/44 , H01L21/205 , H01L21/3065 , B08B7/04 , B08B5/00 , C03C15/00 , C03C23/06
CPC分类号： C23C16/4405 , B08B7/0035 , Y10S156/916
摘要： A method for cleaning a deposition chamber that is used in fabricating electronic devices including the steps of delivering a precursor gas into a remote chamber that is outside of the deposition chamber, activating the precursor gas in the remote chamber via a high power source to form a reactive species, flowing the reactive species from the remote chamber into the deposition chamber, and using the reactive species that is flowed into the deposition chamber from the remote chamber to clean the inside of the deposition chamber.
摘要翻译：一种用于清洁用于制造电子器件的沉积室的方法，包括以下步骤：将前体气体输送到位于沉积室外的远程室中，经由高功率源激活远程室中的前体气体，以形成将反应性物质从远程室流入沉积室，以及使用从远程室流入沉积室的反应物质以清洁沉积室的内部。

7. 发明授权

US5204288A Method for planarizing an integrated circuit structure using low melting inorganic material 失效
标题翻译：使用低熔点无机材料平面化集成电路结构的方法
公开(公告)号：US5204288A
公开(公告)日：1993-04-20
申请号：US845544
申请日：1992-03-04
申请人： Jeffrey Marks , Kam S. Law , David N. Wang , Dan Maydan
发明人： Jeffrey Marks , Kam S. Law , David N. Wang , Dan Maydan
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/768 , H01L23/31
CPC分类号： H01L21/3105 , H01L21/31055 , H01L21/31604 , H01L21/76819 , H01L23/3157 , H01L2924/0002 , Y10S148/133 , Y10S438/913
摘要： A planarizing process for planarizing an integrated circuit structure in a CVD apparatus is disclosed using a low melting inorganic planarizing material which comprises flowing white depositing a low melting inorganic planarizing layer such as a boron oxide glass over a layer of insulating material such as an oxide of silicon, then dry etching the low melting inorganic planarizing layer to planarize the structure, and then depositing a further layer of an insulating material to encapsulate any remaining portions of the low melting glass planarizing layer which may be hygroscopic. The method eliminates the need for separate coating, drying, and curing steps associated with the application of organic-based planarizing layers usually carried out outside of a vacuum apparatus. In a preferred embodiment, the deposition steps and the etching step are all carried out without removing the integrated circuit structure from the apparatus. In a particularly preferred embodiment, all of the steps are carried out in the same chamber of the apparatus. An additional etching step may be carried out after depositing the first insulating layer and prior to deposition of the planarizing layer to remove any voids formed in the insulating layer.
摘要翻译：公开了使用低熔点无机平面化材料来平坦化CVD装置中的集成电路结构的平面化工艺，该无机平面化材料包括使诸如氧化硼玻璃之类的低熔点无机平面化层在诸如氧化物硅，然后干法蚀刻低熔点无机平面化层以使结构平坦化，然后沉积另外的绝缘材料层以封装可能是吸湿性的低熔点玻璃平坦化层的任何剩余部分。该方法消除了对通常在真空装置外进行的有机基平坦化层的应用的独立涂布，干燥和固化步骤的需要。在优选实施例中，沉积步骤和蚀刻步骤全部进行而不从集成电路结构从设备中移除。在特别优选的实施例中，所有步骤在装置的相同腔室中进行。在沉积第一绝缘层之后并且在沉积平坦化层以去除在绝缘层中形成的任何空隙之前，可以进行另外的蚀刻步骤。

8. 发明授权

US06338874B1 Method for multilayer CVD processing in a single chamber 失效
标题翻译：在单室中进行多层CVD处理的方法
公开(公告)号：US06338874B1
公开(公告)日：2002-01-15
申请号：US08572385
申请日：1995-12-14
申请人： Kam S. Law , Robert Robertson , Pamela Lou , Marc Michael Kollrack , Angela Lee , Dan Maydan
发明人： Kam S. Law , Robert Robertson , Pamela Lou , Marc Michael Kollrack , Angela Lee , Dan Maydan
IPC分类号： C23C1600
CPC分类号： H01L21/67167 , C23C16/24 , C23C16/345 , C23C16/54 , H01L21/6719 , H01L21/67207 , H01L21/67236 , H01L29/66765
摘要： Multilayer deposition of thin films onto glass substrates to form thin film transistors can be carried out in the same chamber under similar reaction conditions at high deposition rates. We have found that sequential thin layers of silicon nitride and amorphous silicon can be deposited in the same chamber by chemical vapor deposition using pressure of at least 0.5 Torr and substrate temperatures of about 250-370° C. Subsequently deposited different thin films can also be deposited in separate chemical vapor deposition chambers which are part of a single multichamber vacuum system.
摘要翻译：可以在相同的室中在相同的反应条件下以高沉积速率将薄膜多层沉积到玻璃基板上以形成薄膜晶体管。我们已经发现，氮化硅和非晶硅的顺序薄层可以通过使用至少0.5托的压力和约250-370℃的衬底温度的化学气相沉积在相同的室中沉积。随后沉积的不同薄膜也可以是沉积在单独的化学气相沉积室中，其是单个多室真空系统的一部分。

9. 发明授权

US5871811A Method for protecting against deposition on a selected region of a substrate 失效
标题翻译：防止沉积在基底的选定区域上的方法
公开(公告)号：US5871811A
公开(公告)日：1999-02-16
申请号：US477536
申请日：1995-06-07
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A method for protecting a selected area of a substrate against deposition on the selected area. The method includes the steps of flowing a process gas into a substrate processing chamber and flowing a purge gas to the selected area of the substrate to prevent the process gas from contacting the selected area or minimize contact between the process gas and the selected area. In various embodiments the selected area is a backside periphery of the substrate or the edge of the substrate. Also in these embodiments, the process gas is flowed into a deposition zone in order to deposit a thin film layer over an upper surface of the substrate, and a flow of the process and purge gas is established such that the process gas flows radically across the upper surface of the substrate, combines with the purge gas near an edge of the substrate and exits the processing chamber through an exhaust system.
摘要翻译：一种用于保护衬底的选定区域以防止沉积在所选区域上的方法。该方法包括以下步骤：将工艺气体流入衬底处理室并将吹扫气体流动到衬底的选定区域，以防止工艺气体接触选定区域或最小化工艺气体与所选区域之间的接触。在各种实施例中，所选择的区域是衬底的背面周边或衬底的边缘。同样在这些实施方案中，工艺气体流入沉积区，以便在衬底的上表面上沉积薄膜层，并建立工艺和吹扫气体的流动，使得工艺气体基本上流过基板的上表面与基板边缘附近的吹扫气体结合，并通过排气系统离开处理室。

10. 发明授权

US5755886A Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing 失效
标题翻译：用于在沉积处理期间防止沉积气体接触衬底的选定区域的装置
公开(公告)号：US5755886A
公开(公告)日：1998-05-26
申请号：US483750
申请日：1995-06-07
申请人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
发明人： David Nin-Kou Wang , John M. White , Kam S. Law , Cissy Leung , Salvador P. Umotoy , Kenneth S. Collins , John A. Adamik , Ilya Perlov , Dan Maydan
IPC分类号： C23C16/04 , C23C16/40 , C23C16/44 , C23C16/455 , C23C16/509 , C23C16/54 , H01L21/314 , H01L21/316 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/402 , C23C16/455 , C23C16/45521 , C23C16/5096 , C23C16/54 , H01J37/32082 , H01J37/3244 , H01L21/31604
摘要： A substrate processing reactor capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning and other substrate processing operations all of which can either be performed separately or as part of in-situ multiple step processing. The reactor incorporates a uniform radial gas pumping system which enables uniform reactant gas flow across the wafer. Also included are upper and lower purge gas dispersers. The upper purge gas disperser directs purge gas flow downwardly toward the periphery of the wafer while the lower gas disperser directs purge gas across the backside of the wafer. The radial pumping gas system and purge gas dispersers sweep radially away from the wafer to prevent deposition external to the wafer and keep the chamber clean.
摘要翻译：能够进行热CVD，等离子体增强CVD，等离子体辅助回蚀，等离子体自清洁和其它基板处理操作的基板处理反应器，所有这些都可以单独进行或作为原位多步骤处理的一部分进行。该反应器包含均匀的径向气体泵送系统，其能够跨过晶片均匀的反应气体流动。还包括上部和下部吹扫气体分散器。上部吹扫气体分散器将吹扫气体向下流向晶片的周边，而下部气体分散器引导吹扫气体穿过晶片的背面。径向泵送气体系统和吹扫气体分散器径向扫掠离开晶片，以防止晶片外部沉积并保持室清洁。

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