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    • 8. 发明授权
    • Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric film
    • 有机硅烷CVD前体及其制备有机硅烷聚合物低k电介质膜的用途
    • US06649540B2
    • 2003-11-18
    • US10002042
    • 2001-11-02
    • Qing Min WangCe Ma
    • Qing Min WangCe Ma
    • H01L2131
    • H01L21/02126C23C16/30C23C16/401H01L21/02211H01L21/02274H01L21/3121
    • Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surface and form a film which will have a dielectric constant, K, less than 2.5. The substituted organosilane compounds have the general formula: R1SiR2R3R4 or R5R6R7SiR′SiR8R9R10 or (—R11—)SiR12R13 where, R1 is selected from the group consisting of a cyclic or acyclic hydrocarbon having from one carbon to eight carbon atoms; R2, R3 and R4 are the same or different, and are selected from the groups consisting of H, CH3, vinyl or other hydrocarbon containing two or more carbon atoms; R5, R6, R7, R8, R9, R10 are a cyclic or acyclic hydrocarbon group including H, and can be the same or different, having from one carbon to eight carbon atoms; R′ is a linking group between the two silicon atoms, and can be a cyclic or acyclic hydrocarbon group, having from one carbon to six carbon atoms; R11 is a chelate hydrocarbon group containing two or more carbon atoms, R12 and R13 are a cyclic or acyclic hydrocarbon group including H, and can be the same or different.
    • 公开了在半导体和集成表面上沉积低k电介质膜的方法。 通过化学气相沉积将取代的有机硅烷化合物前体施加到表面,其中它将与表面反应并形成具有小于2.5的介电常数K的膜。 取代的有机硅烷化合物具有以下通式:其中,R 1选自具有一个碳原子至八个碳原子的环状或非环状烃; R2,R3和R4相同或不同,选自H,CH3,乙烯基或含有两个或更多个碳原子的其他烃; R5,R6,R7,R8,R9,R10是包含H的环状或非环状烃基,可以相同或不同,具有一个碳原子数为八个的碳原子; R'是两个硅原子之间的连接基团,可以是具有一个碳原子至六个碳原子的环状或非环状烃基; R11是含有两个以上碳原子的螯合烃基,R12和R13是包括H的环状或非环状烃基,可以相同或不同。