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1. 发明专利

IT8300550V0 未知
公开(公告)号：IT8300550V0
公开(公告)日：1983-06-03
申请号：IT55083
申请日：1983-06-03
申请人： CE MA S R L
IPC分类号： A47F20060101 , A47F

2. 发明申请

US20130125788A1 LOW-VOLATILITY COMPOUNDS FOR USE IN FORMING DEPOSITED LAYERS 审中-公开
标题翻译：用于形成沉积层的低挥发性化合物
公开(公告)号：US20130125788A1
公开(公告)日：2013-05-23
申请号：US13739369
申请日：2013-01-11
申请人： Kenneth AITCHISON , Atul ATHALYE , Ce MA
发明人： Kenneth AITCHISON , Atul ATHALYE , Ce MA
IPC分类号： C09D1/00
CPC分类号： C09D1/00 , C23C16/448
摘要： The present invention relates to the use of low-volatility compounds in forming deposited layers and to methods for accomplishing such deposition. Particular applicability is in the field of depositing layers for semiconductor devices. A solution made up of low vapor pressure solutes (source materials) and solvents, wherein the solvents have a vapor pressure several orders of magnitude lower than that of the solute is described. The solutions are introduced to a vaporization apparatus configured to enable rapid and efficient vaporization of the solute with minimum evaporation of solvent and minimum decomposition of solute.
摘要翻译：本发明涉及低挥发性化合物在形成沉积层中的用途以及实现这种沉积的方法。特别适用于半导体器件沉积层的领域。描述了由低蒸气压溶质（原料）和溶剂组成的溶液，其中溶剂的蒸气压比溶质低几个数量级。将溶液引入蒸发装置，该蒸发装置被配置为能够以最小的溶剂蒸发和溶质的最小分解来快速且有效地蒸发溶质。

3. 发明申请

US20120295038A1 METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：使用基于溶液的前驱体进行原子层沉积的方法和装置
公开(公告)号：US20120295038A1
公开(公告)日：2012-11-22
申请号：US13298574
申请日：2011-11-17
申请人： Ce Ma , Qing Min Wang , Patrick J. Helly , Richard Hogle
发明人： Ce Ma , Qing Min Wang , Patrick J. Helly , Richard Hogle
IPC分类号： C23C16/44 , C23C16/50
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/403 , C23C16/405 , C23C16/409 , C23C16/448 , C23C16/45525
摘要： A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
摘要翻译：提供了具有特殊ALD操作的解决方案稳定和传送技术的独特组合。使用溶解在溶剂中的各种低挥发性固体ALD前体。不稳定的溶质可以在溶液中稳定，并且所有溶液可以在室温下输送。溶液蒸发后，将气相前体和溶剂脉冲进入沉积室，以确保真正的ALD膜生长。

4. 发明申请

US20120294753A1 METHOD AND APPARATUS FOR USING SOLUTION BASED PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
公开(公告)号：US20120294753A1
公开(公告)日：2012-11-22
申请号：US13298563
申请日：2011-11-17
申请人： Ce MA , Qing Min WANG , Patrick J. HELLY , Richard HOGLE
发明人： Ce MA , Qing Min WANG , Patrick J. HELLY , Richard HOGLE
IPC分类号： B05D5/12 , C22C5/04 , C01G23/04 , C01F7/02 , C01G27/02
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/403 , C23C16/405 , C23C16/409 , C23C16/448 , C23C16/45525
摘要： A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

5. 发明授权

US08261908B2 Container for precursors used in deposition processes 有权
标题翻译：用于沉积工艺的前体容器
公开(公告)号：US08261908B2
公开(公告)日：2012-09-11
申请号：US12328982
申请日：2008-12-05
申请人： Ce Ma
发明人： Ce Ma
IPC分类号： B65D25/04
CPC分类号： C23C16/4402 , C23C16/4482
摘要： Precursor source containers to hold precursor materials used in thin film deposition processes, such as ALD and MOCVD methods are described. In particular, the container holds both a liquid precursor or a dissolved precursor solution and a rinse solvent in separate chambers, and reduces the overall space requirement. In one embodiment, a cylinder within a cylinder arrangement provides two separate chambers, one for the precursor solution and the other for the rinse solvent.
摘要翻译：描述了用于保持用于薄膜沉积工艺中的前体材料的前体源容器，例如ALD和MOCVD方法。特别地，容器在分离的室中保持液体前体或溶解的前体溶液和漂洗溶剂，并且减少了总空间需求。在一个实施例中，气缸装置内的气缸提供两个分离的室，一个用于前体溶液，另一个用于冲洗溶剂。

6. 发明申请

US20120178953A1 SOLUTION BASED PRECURSORS 有权
标题翻译：基于解决方案的前提
公开(公告)号：US20120178953A1
公开(公告)日：2012-07-12
申请号：US13378180
申请日：2010-07-01
申请人： Ce Ma , Kee-Chan Kim , Graham Anthony McFarlane
发明人： Ce Ma , Kee-Chan Kim , Graham Anthony McFarlane
IPC分类号： C07F17/00 , C23C16/34 , C23C16/40
CPC分类号： C07F17/00 , C23C16/34 , C23C16/405 , C23C16/45553
摘要： Solution-based precursors for use as starting materials in film deposition processes, such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition. The solution-based precursors allow for the use of otherwise solid precursors that would be unsuitable for vapor phase deposition processes because of their tendency to decompose and solidify during vaporization.
摘要翻译：用于原子层沉积，化学气相沉积和金属有机化学气相沉积的成膜方法中的起始材料的基于溶液的前体。基于溶液的前体允许使用不适合于气相沉积过程的其它固体前体，因为它们在蒸发期间趋于分解和固化。

7. 发明申请

US20100290968A1 SOLUTION BASED LANTHANIDE AND GROUP III PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的基于解决方案的土耳其和第三组前驱体
公开(公告)号：US20100290968A1
公开(公告)日：2010-11-18
申请号：US12465094
申请日：2009-05-13
申请人： Ce MA , Kee-Chan Kim , Graham Anthony McFarlane
发明人： Ce MA , Kee-Chan Kim , Graham Anthony McFarlane
IPC分类号： C01F17/00 , C07F5/00 , C07F5/06 , H01L21/316 , B05D5/12
CPC分类号： C07F17/00 , C23C16/40 , C23C16/45553 , H01L21/02192 , H01L21/0228 , H01L21/3141
摘要： Oxygen free cyclopentadienyl solvent based precursor formulations having the general formula: (R1R2R3R4R5Cp)3*M wherein R1, R2, R3, R4, and R5 are H or hydrocarbon CnHm (n=1 to 10, m=1 to 2n+1), Cp is cyclopentadienyl and M is an element from the lanthanide series or Group III materials.
摘要翻译：具有以下通式的无氧环戊二烯基溶剂基前体制剂：（R1R2R3R4R5Cp）3 * M其中R1，R2，R3，R4和R5是H或烃CnHm（n = 1-10，m = 1〜2n + 1）， Cp是环戊二烯基，M是来自镧系元素或III族材料的元素。

8. 发明申请

US20090305504A1 SINGLE PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：单原子沉积物的单一前体
公开(公告)号：US20090305504A1
公开(公告)日：2009-12-10
申请号：US12374343
申请日：2007-07-02
申请人： Ce Ma , Qing Min Wang
发明人： Ce Ma , Qing Min Wang
IPC分类号： H01L21/3205 , C07F19/00 , C07F7/28 , C07F5/06 , H01L21/31
CPC分类号： C23C16/405 , C23C16/45525 , C23C16/45536 , C23C16/45553
摘要： Single precursors for use in flash ALD processes are disclosed. These precursors have the general formula: XmM(OR)n or XpM(O2R′)q where M is Hf, Zr, Ti, Al, or Ta; X is a ligand that can interact with surface hydroxyl sites; OR and O2R′ are alkoxyl groups with R and R′ containing two or more carbon atoms; m+n=3 to 5; p+2q=3 to 5; and m, n, p, q≠0. Further precursors have the general formula: (R12N)mM(═NR2)n or (R3CN2R42)pM(═NR2)q where M is Hf, Zr, Ti, or Ta; R12N is an amino group with R1 containing two or more carbon atoms; NR2 is an imido group with R2 containing two or more carbon atoms; R3 and R4 are alkyl groups; m+2n=4 or 5; p+2q=4 or 5; and m, n, p, q≠0. Flash ALD methods using these precursors are also described.
摘要翻译：公开了用于闪光ALD工艺的单一前体。这些前体具有以下通式：XmM（OR）n或XpM（O 2 R'）q，其中M是Hf，Zr，Ti，Al或Ta; X是可以与表面羟基位点相互作用的配体; OR和O 2 R'是具有两个或更多个碳原子的R和R'的烷氧基; m + n = 3〜5; p + 2q = 3〜5; 和m，n，p，q0。其它前体具有以下通式：（R 12 N）mM（-NR 2）n或（R 3 CN 2 R 42）p M（-NR 2）q，其中M是Hf，Zr，Ti或Ta; R12N是具有含有两个或更多个碳原子的R 1的氨基; NR2是含有两个或更多个碳原子的R2的亚氨基; R3和R4是烷基; m + 2n = 4或5; p + 2q = 4或5; 和m，n，p，q0。还描述了使用这些前体的闪光ALD方法。

9. 发明申请

US20090220374A1 METHOD AND APPARATUS FOR USING SOLUTION PRECURSORS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的溶液前驱体的方法和装置
公开(公告)号：US20090220374A1
公开(公告)日：2009-09-03
申请号：US12396806
申请日：2009-03-03
申请人： Ce MA , Qing Min WANG , Patrick J. HELLY , Richard HOGLE
发明人： Ce MA , Qing Min WANG , Patrick J. HELLY , Richard HOGLE
IPC分类号： C23C16/18 , B05D5/12 , C23C16/40 , C01F7/02 , C01G27/02 , C22C5/04 , C01G23/04
CPC分类号： C23C16/45544 , C23C16/448 , C23C16/45525 , Y10T428/8305
摘要： A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
摘要翻译：提供了具有特殊ALD操作的解决方案稳定和传送技术的独特组合。使用溶解在溶剂中的各种低挥发性固体ALD前体。不稳定的溶质可以在溶液中稳定，并且所有溶液可以在室温下输送。溶液蒸发后，将气相前体和溶剂脉冲进入沉积室，以确保真正的ALD膜生长。

10. 发明申请

US20220363540A1 METHOD FOR PRETREATING AND RECOVERING A RARE GAS FROM A GAS CONTAMINANT STREAM EXITING AN ETCH CHAMBER 有权
公开(公告)号：US20220363540A1
公开(公告)日：2022-11-17
申请号：US17552869
申请日：2021-12-16
申请人： Jennifer Bugayong Luna , Atul M. Athalye , Ce Ma , Ashwini K. Sinha
发明人： Jennifer Bugayong Luna , Atul M. Athalye , Ce Ma , Ashwini K. Sinha
IPC分类号： C01B23/00 , B01D53/00 , B01D53/14 , B01D53/04
摘要： Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

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