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    • 1. 发明申请
    • FIELD EMISSION BACKPLATE
    • 现场排放背板
    • WO2008017809A1
    • 2008-02-14
    • PCT/GB2007/002852
    • 2007-07-26
    • QUANTUM FILAMENT TECHNOLOGIES LIMITEDROSE, Mervyn, John
    • ROSE, Mervyn, John
    • H01J1/304H01J9/02H01J31/12
    • H01J9/025H01J1/3048H01J31/127
    • There is disclosed an improved field emission backplate (5a; 5b; 5c; 5d; 5e) used in a field emission device (100) such as a display device, and to an associated method of manufacture. Known field emission devices suffer from a number of disadvantages such as: ease of manufacture, predictability of manufacture, quality of manufacture, predictability of technical characteristics. Accordingly the invention provides a field emission backplate (5a; 5b; 5c; 5d; 5e) comprising a plurality of conductive or conducting particulates or particles (20a; 20b; 20c;20d;20e), wherein the conducting particulates are provided within the backplate. The field emission backplate (5a; 5b; 5c; 5d; 5e) comprises a layer (15a; 15b; 15c; 15d; 15e) of amorphous semiconductor material, e.g. Si:H. Each conducting particulate ( 20a; 20b; 20c; 20d; 20e) comprises a point or locality, e.g. of crytallisation, e.g. a "crystallite", within the layer ( 15a; 15b; 15c; 15d; 15e) of amorphous semiconductor material.
    • 公开了一种用于诸如显示装置的场发射装置(100)中使用的改进的场致发射背板(5a; 5b; 5c; 5d; 5e)以及相关联的制造方法。 已知的场致发射器件具有许多缺点,例如:易于制造,制造的可预测性,制造质量,技术特性的可预测性。 因此,本发明提供了包括多个导电或导电微粒或颗粒(20a; 20b; 20c; 20d; 20e)的场致发射背板(5a; 5b; 5c; 5d; 5e),其中所述导电颗粒设置在背板 。 场致发射背板(5a; 5b; 5c; 5d; 5e)包括非晶半导体材料的层(15a; 15b; 15c; 15d; 15e) SI:H。 每个导电颗粒(20a; 20b; 20c; 20d; 20e)包括点或位置,例如 的凝固,例如。 在非晶半导体材料的层(15a; 15b; 15c; 15d; 15e)内的“微晶”。
    • 3. 发明申请
    • FIELD EMISSION BACKPLATE
    • 现场排放背板
    • WO2008017808A1
    • 2008-02-14
    • PCT/GB2007/002847
    • 2007-07-26
    • QUANTUM FILAMENT TECHNOLOGIES LIMITEDROSE, Mervyn, John
    • ROSE, Mervyn, John
    • H01J1/304H01J9/02H01J31/12
    • H01J9/025H01J1/3048H01J31/127
    • There is disclosed an improved method of manufacture of a field emission backplate (5; 5 '; 5a; 5b) used in a field emission device (100), such as a display. Known field emission devices suffer from a number of disadvantages such as: ease of manufacture, predictability of manufacture, quality of manufacture, predictability of technical characteristics. Accordingly the present invention provides a method of forming field emission backplate (5; 5 ';5a; 5b) comprising the steps of : at least partially forming a plurality of conductive or conducting particulates or particles, e.g. crystallites in the field emission backplate (5; 5 '; 5a; 5b) by application of an electrical signal thereto. The backplate (5; 5 '; 5a; 5b) comprises a layer of amorphous semiconductor material, e.g. Si:H.
    • 公开了一种用于场发射装置(100)(例如显示器)中使用的场发射背板(5; 5'; 5a; 5b)的改进方法。 已知的场致发射器件具有许多缺点,例如:易于制造,制造的可预测性,制造质量,技术特性的可预测性。 因此,本发明提供了形成场发射背板(5; 5'; 5a; 5b)的方法,包括以下步骤:至少部分地形成多个导电或导电的微粒或颗粒,例如, 通过向其施加电信号在场致发射背板(5; 5'; 5a; 5b)中的微晶。 背板(5; 5'; 5a; 5b)包括非晶半导体材料层,例如, SI:H。
    • 6. 发明申请
    • FIELD EMISSION BACKPLATE
    • 现场排放背板
    • WO2003015117A1
    • 2003-02-20
    • PCT/GB2002/003691
    • 2002-08-09
    • THE UNIVERSITY COURT OF THE UNIVERSITY OF DUNDEEROSE, Mervyn, JohnSILVA, RaviSHANNON, John
    • ROSE, Mervyn, JohnSILVA, RaviSHANNON, John
    • H01J1/304
    • H01L21/02686H01J1/3042H01J9/025H01L21/2026
    • A field emission backplate 12g formed by laser crystallising an area of amorphous semiconductor based material. Emitter sites 20g result from the rough surface texture caused by the crystallisation process. The crystallisation may be localised using laser interferometry, and profiled emitter tips (20j) grown on the localised crystalline areas (18j) Such backplates can be used in field emission devices emitting into either a vacuum or a wide bad gap light emitting polymer. Furthermore, a backplate (12m) having self aligned gates can be formed by depositing an insulator layer (38m) and metal layer (40m) over the emitter tips, removing the top of the metal layer and etching away the insulator, leaving each tip surrounded by a metal rim. A planarising agent (39n) can be used to refine this process.
    • 通过激光结晶非晶半导体基材料的区域形成的场致发射背板12g。 发射器位置20g是由结晶过程引起的粗糙表面纹理造成的。 结晶可以使用激光干涉测量法定位,并且在局部结晶区域(18j)上生长的成型的发射极尖端(20j)。这种背板可以用于发射到真空或宽的不良间隙发光聚合物的场致发射器件中。 此外,具有自对准栅极的背板(12m)可以通过在发射极尖端上沉积绝缘体层(38m)和金属层(40m)而形成,去除金属层的顶部并蚀刻绝缘体,留下每个尖端包围 通过金属边缘。 平面化剂(39n)可用于改进此过程。