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1. 发明申请

WO2009060200A1 IMPROVED FIELD EMISSION BACKPLATE 审中-公开
标题翻译：改进的场排放背景
公开(公告)号：WO2009060200A1
公开(公告)日：2009-05-14
申请号：PCT/GB2008/003748
申请日：2008-11-07
申请人： QUANTUM FILAMENT TECHNOLOGIES LIMITED , ROSE, Mervyn, John , FAN, Yongchang
发明人： ROSE, Mervyn, John , FAN, Yongchang
IPC分类号： H01J1/304 , H01J9/02 , H01L21/20
CPC分类号： H01J1/3048 , H01J9/025 , H01J2201/3048 , H01L21/02678 , H01L21/02686 , H01L21/02691
摘要： A method of forming a field emission backplate (10a- 10e) is disclosed, the method comprising: providing a backplate (10a - 10e); and laser processing the backplate (10a - 1Oe), wherein an output (300f - 300r) of the laser - e.g. pulse or beam - comprises a sloping or ramped leading edge (305f - 305r). Beneficially the output has a ramped or sloping trailing edge (310f - 310r) and (315f 315r) a wide-portion of substantially continuous intensity. Adjacent pulses are separated by greater than the thermal time constant of the backplate material. The output is provided as a first intensity profile in a scanning direction of the laser output.
摘要翻译：公开了一种形成场致发射背板（10a- 10e）的方法，所述方法包括：提供背板（10a-10e）; 以及对所述背板（10a-10e）进行激光加工，其中所述激光器的输出（300f-300r） - 例如。脉冲或光束 - 包括倾斜或斜坡前缘（305f-305r）。有利地，输出具有斜坡或倾斜的后缘（310f-310r）和（315f 315r）大部分基本连续的强度。相邻脉冲被分离大于背板材料的热时间常数。输出在激光输出的扫描方向上被提供为第一强度分布。

2. 发明申请

WO2008017808A1 FIELD EMISSION BACKPLATE 审中-公开
标题翻译：现场排放背板
公开(公告)号：WO2008017808A1
公开(公告)日：2008-02-14
申请号：PCT/GB2007/002847
申请日：2007-07-26
申请人： QUANTUM FILAMENT TECHNOLOGIES LIMITED , ROSE, Mervyn, John
发明人： ROSE, Mervyn, John
IPC分类号： H01J1/304 , H01J9/02 , H01J31/12
CPC分类号： H01J9/025 , H01J1/3048 , H01J31/127
摘要： There is disclosed an improved method of manufacture of a field emission backplate (5; 5 '; 5a; 5b) used in a field emission device (100), such as a display. Known field emission devices suffer from a number of disadvantages such as: ease of manufacture, predictability of manufacture, quality of manufacture, predictability of technical characteristics. Accordingly the present invention provides a method of forming field emission backplate (5; 5 ';5a; 5b) comprising the steps of : at least partially forming a plurality of conductive or conducting particulates or particles, e.g. crystallites in the field emission backplate (5; 5 '; 5a; 5b) by application of an electrical signal thereto. The backplate (5; 5 '; 5a; 5b) comprises a layer of amorphous semiconductor material, e.g. Si:H.
摘要翻译：公开了一种用于场发射装置（100）（例如显示器）中使用的场发射背板（5; 5'; 5a; 5b）的改进方法。已知的场致发射器件具有许多缺点，例如：易于制造，制造的可预测性，制造质量，技术特性的可预测性。因此，本发明提供了形成场发射背板（5; 5'; 5a; 5b）的方法，包括以下步骤：至少部分地形成多个导电或导电的微粒或颗粒，例如，通过向其施加电信号在场致发射背板（5; 5'; 5a; 5b）中的微晶。背板（5; 5'; 5a; 5b）包括非晶半导体材料层，例如， SI：H。

3. 发明申请

WO1993008575A1 RESISTIVE MEMORY ELEMENT 审中-公开
标题翻译：电阻记忆元素
公开(公告)号：WO1993008575A1
公开(公告)日：1993-04-29
申请号：PCT/GB1992001929
申请日：1992-10-20
申请人： LECOMBER, Joy +hf , BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY , ROSE, Mervyn, John , HAJTO, Janos , OWEN, Alan, Ernest , OSBORNE, Ian, Stewart , SNELL, Anthony, James
发明人： LECOMBER, Joy +hf , BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY , LECOMBER, Peter, George +di
IPC分类号： G11C27/00
CPC分类号： G06N3/0635 , G11C27/00
摘要： The resistance of a resistive memory element, e.g. a synaptic element is programmed, e.g. adjusted to a target value, by pulses of a constant height and variable width. One polarity gives an increase in resistance; the other polarity gives a decrease. A short pulse applied after a longer pulse appears to have no effect. After each polarity change short pulses can again be used to make small adjustments. In a preferred embodiment longer and longer pulses are used until the resistance overshoots the target value. After overshooting the polarity is reversed and a second series of pulses is used to obtain a closer approach to the target. The resistive element comprises a resistive layer located between two electrodes, e.g. a matrix of amorphous silicon doped with boron containing V. One electrode is Cr and the other is V.
摘要翻译：电阻式存储元件的电阻，例如突触元件被编程，例如通过恒定高度和可变宽度的脉冲调节到目标值。一个极性使电阻增加; 另一极性降低。较长脉冲后施加的短脉冲似乎没有效果。每个极性变化后，可以再次使用短脉冲进行微调。在优选实施例中，使用更长和更长的脉冲，直到电阻超过目标值。在超调之后，极性反转，并且使用第二系列脉冲来获得对目标的更近的接近。电阻元件包括位于两个电极之间的电阻层，例如。掺杂有硼的非晶硅的矩阵。一个电极是Cr，另一个是V.

4. 发明申请

WO1990013921A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：WO1990013921A1
公开(公告)日：1990-11-15
申请号：PCT/GB1990000692
申请日：1990-05-04
申请人： BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY , OWEN, Alan, Ernest , SNELL, Anthony, James , HAJTO, Janos , LECOMBER, Peter, George , ROSE, Mervyn, John
发明人： BRITISH TELECOMMUNICATIONS PUBLIC LIMITED COMPANY
IPC分类号： H01L45/00
CPC分类号： H01L45/10 , H01L45/1233 , H01L45/148 , H01L45/1616 , Y10S438/90
摘要： An analogue memory device comprises a layer of doped amorphous silicon located between a first conducting layer and metal contact layer of V, Co, Ni, Pd, Fe or Mn. It has been found that the selection of one of these metals as the contact layer exerts a significant effect on the properties of the device, e.g. the selection of Al, Au or Cu gives no switching whereas Cr, W and Ag give digital instead of analogue switching.
摘要翻译：模拟存储器件包括位于第一导电层和V，Co，Ni，Pd，Fe或Mn的金属接触层之间的掺杂非晶硅层。已经发现，这些金属之一作为接触层的选择对器件的性能，例如， Al，Au或Cu的选择不产生切换，而Cr，W和Ag则不用进行模拟切换。

5. 发明申请

WO2004001785A3 FIELD EMISSION DEVICE 审中-公开
标题翻译：场发射装置
公开(公告)号：WO2004001785A3
公开(公告)日：2004-04-08
申请号：PCT/GB0302634
申请日：2003-06-19
申请人： UNIV DUNDEE , ROSE MERVYN JOHN , SILVA RAVI , SHANNON JOHN , HAJTO JANOS PETER
发明人： ROSE MERVYN JOHN , SILVA RAVI , SHANNON JOHN , HAJTO JANOS PETER
IPC分类号： H01J9/02 , H01J1/304 , H01J1/62 , H01L51/52 , H01J31/12 , H01J9/24
CPC分类号： H01J1/3044 , G02F2001/133625 , H01J2201/30407 , H01J2201/30446 , H01L51/5225
摘要： There is disclosed an improved field emission device (30) which finds use in display devices, such as a flat panel displays. Known devices and displays suffer from problems such as complexity of fabrication and limited colour gamut. The device (30) therefore provides a field emission backplate (38) which is made from a substantially semiconductor based material and comprises a plurality of grown tips (32), the device (30) further comprising at least one electro-luminescent and/or photo-luminescent material (34) having a fluorescent material chemically attached thereto, i.e. a fluorescent dye doped material.
摘要翻译：公开了一种可用于诸如平板显示器的显示装置中的改进的场致发射装置（30）。已知的装置和显示器存在制造复杂性和色域有限等问题。因此，装置（30）提供由基本上半导体的材料制成并包括多个生长的尖端（32）的场发射背板（38），所述装置（30）还包括至少一个电致发光和/或具有与其化学连接的荧光材料的光致发光材料（34），即荧光染料掺杂材料。

6. 发明申请

WO2004001785A2 IMPROVED FIELD EMISSION DEVICE 审中-公开
标题翻译：改进的场发射装置
公开(公告)号：WO2004001785A2
公开(公告)日：2003-12-31
申请号：PCT/GB2003/002634
申请日：2003-06-19
申请人： THE UNIVERSITY COURT OF THE UNIVERSITY OF DUNDEE , ROSE, Mervyn, John , SILVA, Ravi , SHANNON, John , HAJTO, Janos, Peter
发明人： ROSE, Mervyn, John , SILVA, Ravi , SHANNON, John , HAJTO, Janos, Peter
IPC分类号： H01J9/00
CPC分类号： H01J1/3044 , G02F2001/133625 , H01J2201/30407 , H01J2201/30446 , H01L51/5225
摘要： There is disclosed an improved field emission device (30) which finds use in display devices, such as a flat panel displays. Known devices and displays suffer from problems such as complexity of fabrication and limited colour gamut. The device (30) therefore provides a field emission backplate (38) which is made from a substantially semiconductor based material and comprises a plurality of grown tips (32), the device (30) further comprising at least one electro-luminescent and/or photo-luminescent material (34) having a fluorescent material chemically attached thereto, i.e. a fluorescent dye doped material.
摘要翻译：公开了一种可用于诸如平板显示器的显示装置中的改进的场致发射装置（30）。已知的装置和显示器存在制造复杂性和色域有限等问题。因此，装置（30）提供由基本上半导体的材料制成并包括多个生长的尖端（32）的场发射背板（38），所述装置（30）还包括至少一个电致发光和/或具有与其化学连接的荧光材料的光致发光材料（34），即荧光染料掺杂材料。

7. 发明申请

WO2008017809A1 FIELD EMISSION BACKPLATE 审中-公开
标题翻译：现场排放背板
公开(公告)号：WO2008017809A1
公开(公告)日：2008-02-14
申请号：PCT/GB2007/002852
申请日：2007-07-26
申请人： QUANTUM FILAMENT TECHNOLOGIES LIMITED , ROSE, Mervyn, John
发明人： ROSE, Mervyn, John
IPC分类号： H01J1/304 , H01J9/02 , H01J31/12
CPC分类号： H01J9/025 , H01J1/3048 , H01J31/127
摘要： There is disclosed an improved field emission backplate (5a; 5b; 5c; 5d; 5e) used in a field emission device (100) such as a display device, and to an associated method of manufacture. Known field emission devices suffer from a number of disadvantages such as: ease of manufacture, predictability of manufacture, quality of manufacture, predictability of technical characteristics. Accordingly the invention provides a field emission backplate (5a; 5b; 5c; 5d; 5e) comprising a plurality of conductive or conducting particulates or particles (20a; 20b; 20c;20d;20e), wherein the conducting particulates are provided within the backplate. The field emission backplate (5a; 5b; 5c; 5d; 5e) comprises a layer (15a; 15b; 15c; 15d; 15e) of amorphous semiconductor material, e.g. Si:H. Each conducting particulate ( 20a; 20b; 20c; 20d; 20e) comprises a point or locality, e.g. of crytallisation, e.g. a "crystallite", within the layer ( 15a; 15b; 15c; 15d; 15e) of amorphous semiconductor material.
摘要翻译：公开了一种用于诸如显示装置的场发射装置（100）中使用的改进的场致发射背板（5a; 5b; 5c; 5d; 5e）以及相关联的制造方法。已知的场致发射器件具有许多缺点，例如：易于制造，制造的可预测性，制造质量，技术特性的可预测性。因此，本发明提供了包括多个导电或导电微粒或颗粒（20a; 20b; 20c; 20d; 20e）的场致发射背板（5a; 5b; 5c; 5d; 5e），其中所述导电颗粒设置在背板。场致发射背板（5a; 5b; 5c; 5d; 5e）包括非晶半导体材料的层（15a; 15b; 15c; 15d; 15e） SI：H。每个导电颗粒（20a; 20b; 20c; 20d; 20e）包括点或位置，例如的凝固，例如。在非晶半导体材料的层（15a; 15b; 15c; 15d; 15e）内的“微晶”。

8. 发明申请

WO2003015117A1 FIELD EMISSION BACKPLATE 审中-公开
标题翻译：现场排放背板
公开(公告)号：WO2003015117A1
公开(公告)日：2003-02-20
申请号：PCT/GB2002/003691
申请日：2002-08-09
申请人： THE UNIVERSITY COURT OF THE UNIVERSITY OF DUNDEE , ROSE, Mervyn, John , SILVA, Ravi , SHANNON, John
发明人： ROSE, Mervyn, John , SILVA, Ravi , SHANNON, John
IPC分类号： H01J1/304
CPC分类号： H01L21/02686 , H01J1/3042 , H01J9/025 , H01L21/2026
摘要： A field emission backplate 12g formed by laser crystallising an area of amorphous semiconductor based material. Emitter sites 20g result from the rough surface texture caused by the crystallisation process. The crystallisation may be localised using laser interferometry, and profiled emitter tips (20j) grown on the localised crystalline areas (18j) Such backplates can be used in field emission devices emitting into either a vacuum or a wide bad gap light emitting polymer. Furthermore, a backplate (12m) having self aligned gates can be formed by depositing an insulator layer (38m) and metal layer (40m) over the emitter tips, removing the top of the metal layer and etching away the insulator, leaving each tip surrounded by a metal rim. A planarising agent (39n) can be used to refine this process.
摘要翻译：通过激光结晶非晶半导体基材料的区域形成的场致发射背板12g。发射器位置20g是由结晶过程引起的粗糙表面纹理造成的。结晶可以使用激光干涉测量法定位，并且在局部结晶区域（18j）上生长的成型的发射极尖端（20j）。这种背板可以用于发射到真空或宽的不良间隙发光聚合物的场致发射器件中。此外，具有自对准栅极的背板（12m）可以通过在发射极尖端上沉积绝缘体层（38m）和金属层（40m）而形成，去除金属层的顶部并蚀刻绝缘体，留下每个尖端包围通过金属边缘。平面化剂（39n）可用于改进此过程。

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