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    • 4. 发明申请
    • THROUGH-SILICON VIA FABRICATION WITH ETCH STOP FILM
    • 通过硅胶制成的薄膜
    • WO2011116326A1
    • 2011-09-22
    • PCT/US2011/029058
    • 2011-03-18
    • QUALCOMM IncorporatedGU, ShiqunLI, YimingRAY, Urmi
    • GU, ShiqunLI, YimingRAY, Urmi
    • H01L21/768
    • H01L21/76898
    • For a semiconductor wafer substrate (102) having an inter layer dielectric (110), a through - silicon via may be formed in the substrate by first depositing an etch stop film (202) on top of the inter layer dielectric, followed by etching an opening (204) through the etch stop film, the interlayer dielectric, and into the substrate. A dielectric liner (206) is then deposited over the etch stop film and into the opening. For some embodiments, the dielectric liner may be etched away except for those portions adhering to the sidewall of the opening. Then a conductive material (208) may be deposited into the opening and on the etch stop film. The excess conductive material may then be removed, and for some embodiments the etch stop film may also be removed.
    • 对于具有层间电介质(110)的半导体晶片基板(102),可以通过首先在层间电介质的顶部上沉积蚀刻停止膜(202),然后蚀刻 通过蚀刻停止膜,层间电介质,并进入衬底的开口(204)。 然后将电介质衬垫(206)沉积在蚀刻停止膜上并进入开口中。 对于一些实施例,除了粘附到开口的侧壁上的那些部分之外,电介质衬垫可被蚀刻掉。 然后可以将导电材料(208)沉积到开口中和蚀刻停止膜上。 然后可以除去过量的导电材料,并且对于一些实施例,也可以去除蚀刻停止膜。