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1. 发明申请

WO2011097704A1 CONCENTRATED PHOTOVOLTAIC AND THERMAL SYSTEM 审中-公开
标题翻译：浓缩的光伏和热系统
公开(公告)号：WO2011097704A1
公开(公告)日：2011-08-18
申请号：PCT/CA2011/000150
申请日：2011-02-10
申请人： QUADRA SOLAR CORPORATION , ARAB, Ra'ed , AWAD, Yousef , GRUMAZESCU, Mihai
发明人： ARAB, Ra'ed , AWAD, Yousef , GRUMAZESCU, Mihai
IPC分类号： H01L31/052 , G02B7/00 , H01L31/048
CPC分类号： H01L31/0543 , F24S23/31 , F24S23/75 , F24S30/45 , F24S2023/872 , H02S40/44 , Y02E10/43 , Y02E10/47 , Y02E10/52 , Y02E10/60
摘要： A concentrated photovoltaic and thermal system is disclosed. The system compromises a photovoltaic receiver assembly that produces highly concentrated solar energy, resulting in efficient energy conversion that requires fewer photovoltaic receivers than an arrangement that lacks such high concentration levels. The receiver assembly comprises a primary optical element that concentrates the source light onto an electromagnetic energy receiver, a secondary optical element to aid in further concentration of the light source, a thermal energy converter and a heat dissipation unit. The photovoltaic receiver assembly is preferably mounted on a tracking system to maximize sun exposure.
摘要翻译：公开了一种集中的光伏和热系统。该系统损害了产生高度集中的太阳能的光伏接收器组件，导致有效的能量转换，比缺乏这种高浓度水平的装置需要更少的光伏接收器。接收器组件包括将源光聚焦到电磁能量接收器上的主要光学元件，辅助光学元件以辅助光源的进一步浓缩，热能转换器和散热单元。光伏接收器组件优选地安装在跟踪系统上以最大限度地提高阳光照射。

2. 发明申请

WO2009067781A1 METHODS AND APPARATUS FOR FORMING GASEOUS ORGANOSILICON COMPOUNDS 审中-公开
标题翻译：形成气相有机硅化合物的方法和装置
公开(公告)号：WO2009067781A1
公开(公告)日：2009-06-04
申请号：PCT/CA2008/001504
申请日：2008-08-26
申请人： SIXTRON ADVANCED MATERIALS, INC. , ALLEN, Sebastien , AWAD, Yousef , GAUMOND, Alexandre , DAVIES, Michael
发明人： ALLEN, Sebastien , AWAD, Yousef , GAUMOND, Alexandre , DAVIES, Michael
IPC分类号： C07F7/08 , B01F3/06 , B01J19/14 , B01J4/02 , B01J8/02 , C07F7/10 , G05B19/042 , G05D23/19 , G05D7/06
CPC分类号： C07F7/0896 , C07F7/0832
摘要： The present application is directed to a method for producing, from a solid organosilane compound, a mixture of gaseous organosilicon compounds having a desired molar ratio, the method comprising the step of pyrolysing the solid organosilane while maintaining a predetermined pressure which is selected to provide the desired molar ratio of gaseous organosilicon compounds. Associated apparatus and control mechanisms are also disclosed.
摘要翻译：本申请涉及从固体有机硅烷化合物制备具有所需摩尔比的气态有机硅化合物的混合物的方法，该方法包括在保持预定压力的同时热固固体有机硅烷的步骤，该预定压力被选择以提供气态有机硅化合物的所需摩尔比。还公开了相关的装置和控制机制。

3. 发明申请

WO2003087938A3 PLASMA POLYMERIZED ELECTRON BEAM RESIST 审中-公开
公开(公告)号：WO2003087938A3
公开(公告)日：2003-10-23
申请号：PCT/CA2003/000328
申请日：2003-03-10
申请人： QUANTISCRIPT INC. , AWAD, Yousef , LAVALLEE, Eric , BEAUVAIS, Jacques , DROUIN, Dominique
发明人： AWAD, Yousef , LAVALLEE, Eric , BEAUVAIS, Jacques , DROUIN, Dominique
IPC分类号： G03F7/004
摘要： A process for producing a pattern of negative electron beam resist comprises: depositing a layer of plasma polymerized fluoropolymer on a face of a substrate, the plasma polymerized fluoropolymer forming the negative electron beam resist; producing an electron beam; moving the electron beam on the layer of plasma polymerized fluoropolymer to define the pattern, the layer then having exposed fluoropolymer areas defining the pattern and unexposed fluoropolymer areas; and removing the unexposed fluoropolymer areas to leave only the pattern on the face of the subtrate. According to an alternative, the process comprises: depositing the layer of negative electron beam resist on a face of a substrate; producing an electron beam; moving the electron beam on the layer of negative electron beam resist to define the pattern, the layer then having exposed resist areas defining the pattern and unexposed resist areas; treating the patterned layer with a base solution to decrease a dry etch resistance of the unexposed resist areas; and dry etching the unexposed resist areas to leave only the pattern on the face of the substrate.

4. 发明申请

WO2009143618A1 SILICON CARBIDE-BASED ANTIREFLECTIVE COATING 审中-公开
标题翻译：基于碳化硅的抗反射涂层
公开(公告)号：WO2009143618A1
公开(公告)日：2009-12-03
申请号：PCT/CA2009/000730
申请日：2009-05-28
申请人： SIXTRON ADVANCED MATERIALS, INC. , ALLEN, Sebastien , AWAD, Yousef , GAUMOND, Alexandre , DAVIES, Michael
发明人： ALLEN, Sebastien , AWAD, Yousef , GAUMOND, Alexandre , DAVIES, Michael
IPC分类号： C23C30/00 , C01B31/36 , C23C16/30 , C23C16/448 , C23C18/12 , H01L31/0216 , H01L31/042 , H01L31/18 , C09D5/32
CPC分类号： C23C30/00 , C01B32/956 , C09D5/32 , C23C16/325 , C23C16/36 , C23C16/56 , C23C18/122 , C23C26/00 , C23C28/00 , C23C28/044 , C23C28/048 , H01L31/02168 , Y02E10/50 , Y10T428/24942 , Y10T428/24967 , Y10T428/265
摘要： The present invention relates to an antireflective coating comprising an amorphous silicon carbide-based film, which film further comprises hydrogen atoms and optionally further comprises oxygen and/or nitrogen, the film having an effective refractive index (n) between 2.3 and 2.7 and an extinction coefficient (k) of less than 0.01 at a wavelength of 630nm. The present invention also relates to methods for preparing the antireflective coating and to solar cells comprising the antireflective coating.
摘要翻译：本发明涉及包含非晶碳化硅基膜的抗反射涂层，该膜还包含氢原子，并且任选地还包含氧和/或氮，该膜具有2.3至2.7之间的有效折射率（n）和消光系数（k）在630nm波长处小于0.01。本发明还涉及制备抗反射涂层和包含抗反射涂层的太阳能电池的方法。

5. 发明申请

WO2008104059A1 METHOD FOR FORMING A FILM ON A SUBSTRATE 审中-公开
标题翻译：在基板上形成薄膜的方法
公开(公告)号：WO2008104059A1
公开(公告)日：2008-09-04
申请号：PCT/CA2008/000357
申请日：2008-02-27
申请人： SIXTRON ADVANCED MATERIALS, INC. , AWAD, Yousef , ALLEN, Sebastien , DAVIES, Michael , GAUMOND, Alexandre , EL KHAKANI, My Ali , SMIRANI, Riadh
发明人： AWAD, Yousef , ALLEN, Sebastien , DAVIES, Michael , GAUMOND, Alexandre , EL KHAKANI, My Ali , SMIRANI, Riadh
IPC分类号： C23C16/513 , C23C16/30 , C23C16/452 , C23C16/56
CPC分类号： C23C16/325 , C23C16/30 , C23C16/36 , C23C16/4485
摘要： A method for forming a film on a substrate comprising : heating a solid organosilane source in a heating chamber to form a gaseous precursor; transferring the gaseous precursor to a deposition chamber; and reacting the gaseous precursor using an energy source to form the film on the substrate. The film comprises Si and C, and optionally comprises other elements such as N, O, F, B, P, or a combination thereof.
摘要翻译：一种在基材上形成薄膜的方法，包括：在加热室中加热固体有机硅烷源以形成气态前体; 将气态前体转移到沉积室; 并且使用能量源使气体前体反应以在衬底上形成膜。该膜包含Si和C，并且任选地包括其它元素如N，O，F，B，P或它们的组合。

6. 发明申请

WO2003087938A2 PLASMA POLYMERIZED ELECTRON BEAM RESIST 审中-公开
标题翻译：等离子体聚合电子束电阻
公开(公告)号：WO2003087938A2
公开(公告)日：2003-10-23
申请号：PCT/CA2003/000328
申请日：2003-03-10
申请人： QUANTISCRIPT INC. , AWAD, Yousef , LAVALLEE, Eric , BEAUVAIS, Jacques , DROUIN, Dominique
发明人： AWAD, Yousef , LAVALLEE, Eric , BEAUVAIS, Jacques , DROUIN, Dominique
IPC分类号： G03F7/004
CPC分类号： G03F1/78 , G03F7/0046 , G03F7/038 , G03F7/38 , H01L21/0277 , H01L21/31138 , Y10S438/948 , Y10S438/95
摘要： A process for producing a pattern of negative electron beam resist comprises: depositing a layer of plasma polymerized fluoropolymer on a face of a substrate, the plasma polymerized fluoropolymer forming the negative electron beam resist; producing an electron beam; moving the electron beam on the layer of plasma polymerized fluoropolymer to define the pattern, the layer then having exposed fluoropolymer areas defining the pattern and unexposed fluoropolymer areas; and removing the unexposed fluoropolymer areas to leave only the pattern on the face of the subtrate. According to an alternative, the process comprises: depositing the layer of negative electron beam resist on a face of a substrate; producing an electron beam; moving the electron beam on the layer of negative electron beam resist to define the pattern, the layer then having exposed resist areas defining the pattern and unexposed resist areas; treating the patterned layer with a base solution to decrease a dry etch resistance of the unexposed resist areas; and dry etching the unexposed resist areas to leave only the pattern on the face of the substrate.
摘要翻译：用于制造负电子束抗蚀剂图案的方法包括：在基板的表面上沉积等离子体聚合的氟聚合物层，等离子体聚合的含氟聚合物形成负电子束抗蚀剂; 产生电子束; 将等离子体聚合的氟聚合物层上的电子束移动以限定图案，然后该层具有限定图案和未曝光的含氟聚合物区域的暴露的含氟聚合物区域; 并且除去未曝光的含氟聚合物区域，以仅留下在底泥表面上的图案。根据替代方案，该方法包括：在衬底的表面上沉积负电子束抗蚀剂层; 产生电子束; 将电子束移动到负电子束抗蚀剂层上以限定图案，然后该层具有限定图案和未曝光的抗蚀剂区域的曝光的抗蚀剂区域; 用基底溶液处理图案化层以降低未曝光的抗蚀剂区域的耐干蚀刻电阻; 并且干燥地蚀刻未曝光的抗蚀剂区域，以仅留下衬底的表面上的图案。

7. 发明公开

EP2534703A1 CONCENTRATED PHOTOVOLTAIC AND THERMAL SYSTEM 审中-公开
标题翻译：光伏发电集中应用和热力系统的
公开(公告)号：EP2534703A1
公开(公告)日：2012-12-19
申请号：EP11741772.5
申请日：2011-02-10
申请人： Quadra Solar Corporation
发明人： ARAB, Ra'ed , AWAD, Yousef , GRUMAZESCU, Mihai
IPC分类号： H01L31/052 , G02B7/00 , H01L31/048
CPC分类号： H01L31/0543 , F24S23/31 , F24S23/75 , F24S30/45 , F24S2023/872 , H02S40/44 , Y02E10/43 , Y02E10/47 , Y02E10/52 , Y02E10/60
摘要： A concentrated photovoltaic and thermal system is disclosed. The system compromises a photovoltaic receiver assembly that produces highly concentrated solar energy, resulting in efficient energy conversion that requires fewer photovoltaic receivers than an arrangement that lacks such high concentration levels. The receiver assembly comprises a primary optical element that concentrates the source light onto an electromagnetic energy receiver, a secondary optical element to aid in further concentration of the light source, a thermal energy converter and a heat dissipation unit. The photovoltaic receiver assembly is preferably mounted on a tracking system to maximize sun exposure.

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