专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

CA2782567A1 PROCEDE EN TEMPS REEL D'ALPHA MATTING VIDEO MULTICHROMATIQUE A PRISME SEPARATEUR, CAPTEURS MULTIPLES ET SYSTEME DE PROJECTION A LUMIERE INVISIBLE 未知
公开(公告)号：CA2782567A1
公开(公告)日：2014-01-04
申请号：CA2782567
申请日：2012-07-04
申请人： LAVALLEE ERIC
发明人： LAVALLEE ERIC
IPC分类号： H04N5/262

2. 发明专利

CA2287671A1 METHOD FOR USING SUB-MICRON SILICIDE STRUCTURES FORMED BY DIRECT-WRITE ELECTRON BEAM LITHOGRAPHY FOR FABRICATING MASKS FOR EXTREME ULTRA-VIOLET AND DEEP ULTRA-VIOLET LITHOGRAPHY 未知
公开(公告)号：CA2287671A1
公开(公告)日：2001-04-27
申请号：CA2287671
申请日：1999-10-27
申请人： DROUIN DOMINIQUE , LAVALLEE ERIC , BEAUVAIS JACQUES
发明人： DROUIN DOMINIQUE , LAVALLEE ERIC , BEAUVAIS JACQUES
IPC分类号： G03F1/00 , G03F1/22 , G03F1/08
摘要： To fabricate a mask for deep ultra-violet lithography, a layer of material opaque to deep ultra-violet radiation, a layer of silicon and a layer of metal are successively deposited on a transparent substrate. A focused electron beam is displaced on the superposed layers of metal and silicon to form a structure of etch-resistant metal/silicon compound. Finally, the three layers are etched to leave on the substrate only the structure of etch-resistant metal/silicon compound and the layer of material opaque to deep ultra-violet radiation underneath that structure to thereby form a mask for deep ultra-violet lithography. To fabricate a mask for extreme ultra-violet lithography, an etch stop layer, a repair buffer layer, a layer made of extreme ultra-violet radiation absorbent material, a layer of silicon and a layer of metal are successively deposited on a substrate made of extreme ultra-violet reflective material. A focused electron beam is displaced on the superposed layers of metal and silicon to form a structure of etch-resistant metal/silicon compound. The layer of metal, the layer of silicon, the layer made of extreme ultra-violet absorbent material, and the repair buffer layer are etched to leave on the substrate (a) the structure of etch-resistant metal/silicon compound and (b) the layer madeof extreme ultra-violet absorbent material and the repair buffer layer underneath that structure to form the mask for extreme ultra-violet lithography.

3. 发明专利

CA2197400A1 FABRICATION OF SUB-MICRON SILICIDE STRUCTURES ON SILICON USING RESISTLESS ELECTRON BEAM LITHOGRAPHY 未知
公开(公告)号：CA2197400A1
公开(公告)日：1998-08-12
申请号：CA2197400
申请日：1997-02-12
申请人： LAVALLEE ERIC , DROUIN DOMINIQUE , BEAUVAIS JACQUES , UNIV SHERBROOKE
发明人： LAVALLEE ERIC , DROUIN DOMINIQUE , BEAUVAIS JACQUES
IPC分类号： C30B31/20 , H01L21/44
摘要： A method for fabricating a sub-micron structure of etch-resistant metal/semiconductor compound on a substrate of semiconductor material comprises the step of depositing onto the substrate a layer of metal capable of reacting with the semiconductor material to form etch-resistant metal/semiconductor compound, and the step of producing a focused electron beam. The focused electron beam is applied to the layer of metal to locally heat the metal and semiconductor material and cause diffusion of the metal and semiconductor material in each other to form etch-resistant metal/semiconductor compound. The focused electron beam is displaced onto the layer of metal to form the structure of etch-resistant metal/semiconductor compound. Finally, the layer of metal is wet etched to leave on the substrate only the structure of metal/semiconductor compound. Following wet etching of the layer of metal, an oxygen plasma etch can be conducted to remove a carbon deposit formed at the surface of the structure of etch-resistant metal/semiconductor compound. Also, the substrate may be subsequently etched to remove a thin layer of metal rich semiconductor material formed at the surface of the substrate by reaction, at room temperature, of the metal and semiconductor material with each other.

4. 发明专利

CA2797151A1 SYSTEME MODULAIRE D'ENTRAINEMENT AEROBIQUE INTERACTIF 未知
公开(公告)号：CA2797151A1
公开(公告)日：2014-04-26
申请号：CA2797151
申请日：2012-10-26
申请人： LAVALLEE ERIC
发明人： LAVALLEE ERIC
IPC分类号： A63B69/00 , A63B22/00 , A63B24/00 , A63B26/00 , A63B69/20 , A63B69/34 , G01S1/70 , H04N5/30
摘要： L'invention est un système modulaire de conditionnement physique intégrant différents capteurs qui communiquent les informations de force, de vitesse et de temps, via un programme informatique à un smartphone, propriété de l'utilisateur. Toutes les informations des capteurs sont traduites en information utile à l'application interactive spécialement conçue et installée sur le smartphone de l'utilisateur. Cette application donne à l'utilisateur des fonctions diverses telles que des jeux, des routines préprogrammées, des logiciels de création musicale ou tout simplement des rapports d'entraînements. Cette invention a pour but de stimuler les utilisateurs dans leurs entraînements en les divertissant et leur offrant des modules d'entraînements efficaces, accessibles, sécuritaires, innovateurs et extrêmement divertissants. Elle est un ensemble de modules interactifs, complémentaires et numériquement assistés. Ces modules sont conçus afin de donner un grand nombre de routines et d'objectifs d'entrainement. Pour cette raison, l'invention est une série d'objet et de procédés destinés aux équipements multi-fonctionnels interactifs d'activité physique.

5. 发明申请

WO2003079112A1 METHOD OF PRODUCING AN ETCH-RESISTANT POLYMER STRUCTURE USING ELECTRON BEAM LITHOGRAPHY 审中-公开
标题翻译：使用电子束光刻技术生产耐蚀聚合物结构的方法
公开(公告)号：WO2003079112A1
公开(公告)日：2003-09-25
申请号：PCT/CA2003/000136
申请日：2003-01-31
申请人： QUANTISCRIPT INC. , LAVALLEE, Eric , BEAUVAIS, Jacques , DROUIN, Dominique , CLOUTIER, Mélanie
发明人： LAVALLEE, Eric , BEAUVAIS, Jacques , DROUIN, Dominique , CLOUTIER, Mélanie
IPC分类号： G03F7/004
CPC分类号： G03F1/22 , G03F7/0045 , G03F7/2059
摘要： The present invention relates to a method of producing a structure of etch-resistant polymer on a substrate. A layer of sterol capable of polymerizing to form this structure is first deposited on a face of the substrate. Then, a first region of the layer of sterol is exposed to an electron beam to locally polymerize this layer and form the structure of etch-resistant polymer. A second region of the layer of sterol that has not been exposed to the electron beam is removed to leave. on the face of the substrate only the structure of etch-resistant polymer. Finally, a region of the face of the substrate not covered by the structure of etch-resistant polymer can be etched away, and the structure of etch-resistant polymer removed following this etching.
摘要翻译：本发明涉及在衬底上制造耐蚀刻聚合物结构的方法。首先将能够聚合以形成该结构的固醇层沉积在基材的表面上。然后，将固醇层的第一区域暴露于电子束以局部聚合该层并形成耐蚀刻聚合物的结构。去除未暴露于电子束的甾醇层的第二区域离开。在基板的表面只有抗蚀剂聚合物的结构。最后，可以蚀刻掉不被耐蚀刻聚合物结构覆盖的衬底的表面的区域，并且在该蚀刻之后除去耐蚀刻聚合物的结构。

6. 发明申请

WO2005015308A2 FABRICATION PROCESS FOR HIGH RESOLUTION LITHOGRAPHY MASKS USING EVAPORATED OR PLASMA ASSISTED ELECTRON SENSITIVE RESISTS WITH PLATING IMAGE REVERSAL 审中-公开
标题翻译：使用蒸发或等离子体辅助电感应电阻的高分辨率光刻胶片的制造工艺与镀膜图像反转
公开(公告)号：WO2005015308A2
公开(公告)日：2005-02-17
申请号：PCT/CA2004/001010
申请日：2004-07-08
申请人： QUANTISCRIPT INC. , LAVALLEE, Eric , BEAUVAIS, Jacques , DROUIN, Dominique
发明人： LAVALLEE, Eric , BEAUVAIS, Jacques , DROUIN, Dominique
IPC分类号： G03F1/00
CPC分类号： G03F1/22 , G03F1/20 , G03F1/78
摘要： The present invention relates to a method for fabricating a high resolution lithography mask, comprising providing a blank mask, coating the blank mask with a conductive layer, depositing a negative electron-sensitive resist layer on the conductive layer, applying an electron beam irradiation to the negative electron-sensitive resist layer to form patterns of non-soluble resist, dissolving the negative electron-sensitive resist layer to leave on the conductive layer only the patterns of non-soluble resist, plating an etchresistant material on the conductive layer to invert the patterns, and conducting a directional etch through the patterns not protected by the plated etch-resistant material to transfer these patterns into the blank mask.
摘要翻译：本发明涉及一种制造高分辨率光刻掩模的方法，包括提供一个空白掩模，用导电层涂覆该掩模掩模，在该导电层上沉积一个负电子敏感抗蚀剂层，向该导电层施加电子束照射负电子敏感抗蚀剂层以形成不溶性抗蚀剂图案，溶解负电子敏感抗蚀剂层仅在导电层上留下不溶性抗蚀剂的图案，在导电层上镀覆耐蚀性材料以反转图案，并且通过不被电镀抗蚀刻材料保护的图案进行定向蚀刻，以将这些图案转移到空白掩模中。

7. 发明申请

WO2003087938A3 PLASMA POLYMERIZED ELECTRON BEAM RESIST 审中-公开
公开(公告)号：WO2003087938A3
公开(公告)日：2003-10-23
申请号：PCT/CA2003/000328
申请日：2003-03-10
申请人： QUANTISCRIPT INC. , AWAD, Yousef , LAVALLEE, Eric , BEAUVAIS, Jacques , DROUIN, Dominique
发明人： AWAD, Yousef , LAVALLEE, Eric , BEAUVAIS, Jacques , DROUIN, Dominique
IPC分类号： G03F7/004
摘要： A process for producing a pattern of negative electron beam resist comprises: depositing a layer of plasma polymerized fluoropolymer on a face of a substrate, the plasma polymerized fluoropolymer forming the negative electron beam resist; producing an electron beam; moving the electron beam on the layer of plasma polymerized fluoropolymer to define the pattern, the layer then having exposed fluoropolymer areas defining the pattern and unexposed fluoropolymer areas; and removing the unexposed fluoropolymer areas to leave only the pattern on the face of the subtrate. According to an alternative, the process comprises: depositing the layer of negative electron beam resist on a face of a substrate; producing an electron beam; moving the electron beam on the layer of negative electron beam resist to define the pattern, the layer then having exposed resist areas defining the pattern and unexposed resist areas; treating the patterned layer with a base solution to decrease a dry etch resistance of the unexposed resist areas; and dry etching the unexposed resist areas to leave only the pattern on the face of the substrate.

8. 发明申请

WO2007030918A1 HIGH SENSITIVITY ELECTRON BEAM RESIST PROCESSING 审中-公开
标题翻译：高灵敏度电子束阻抗处理
公开(公告)号：WO2007030918A1
公开(公告)日：2007-03-22
申请号：PCT/CA2006/001453
申请日：2006-09-01
申请人： QUANTISCRIPT INC. , LAVALLEE, Eric , MANGOUA, Bertrand, Takam
发明人： LAVALLEE, Eric , MANGOUA, Bertrand, Takam
IPC分类号： H01L21/027 , H01L51/40
CPC分类号： G03F7/0046 , G03F1/78
摘要： A process for producing a pattern in a radiation sensitive fluoropolymer resist, comprises depositing a layer of the radiation sensitive fluoropolymer resist on a face of a substrate. The radiation sensitive fluoropolymer resist is exposed to an electron beam to define the pattern, the resist then having an exposed fluoropolymer resist area defining the pattern and an unexposed fluoropolymer resist area. The exposed fluoropolymer resist area is finally removed by contacting the radiation sensitive fluoropolymer resist with an alkaline polar aprotic solvent system leaving only the unexposed fluoropolymer resist area on the substrate.
摘要翻译：一种用于在辐射敏感性氟聚合物抗蚀剂中制造图案的方法，包括在基材的表面上沉积辐射敏感性氟聚合物抗蚀剂层。将辐射敏感的氟聚合物抗蚀剂暴露于电子束以限定图案，然后抗蚀剂具有限定图案的暴露的含氟聚合物抗蚀剂区域和未暴露的含氟聚合物抗蚀剂区域。通过使辐射敏感的氟聚合物抗蚀剂与碱性极性非质子溶剂体系接触，仅留下基材上未暴露的含氟聚合物抗蚀剂区域，最终除去暴露的含氟聚合物抗蚀剂区域。

9. 发明申请

WO2005015308B1 FABRICATION PROCESS FOR HIGH RESOLUTION LITHOGRAPHY MASKS USING EVAPORATED OR PLASMA ASSISTED ELECTRON SENSITIVE RESISTS WITH PLATING IMAGE REVERSAL 审中-公开
公开(公告)号：WO2005015308B1
公开(公告)日：2005-11-10
申请号：PCT/CA2004001010
申请日：2004-07-08
申请人： QUANTISCRIPT INC , LAVALLEE ERIC , BEAUVAIS JACQUES , DROUIN DOMINIQUE
发明人： LAVALLEE ERIC , BEAUVAIS JACQUES , DROUIN DOMINIQUE
IPC分类号： G03F1/20 , G03F1/22 , G03F1/68 , G03F1/78 , G03F1/14 , G03F1/08
CPC分类号： G03F1/22 , G03F1/20 , G03F1/78
摘要： The present invention relates to a method for fabricating a high resolution lithography mask, comprising providing a blank mask, coating the blank mask with a conductive layer, depositing a negative electron-sensitive resist layer on the conductive layer, applying an electron beam irradiation to the negative electron-sensitive resist layer to form patterns of non-soluble resist, dissolving the negative electron-sensitive resist layer to leave on the conductive layer only the patterns of non-soluble resist, plating an etchresistant material on the conductive layer to invert the patterns, and conducting a directional etch through the patterns not protected by the plated etch-resistant material to transfer these patterns into the blank mask.

10. 发明申请

WO2005015308A3 FABRICATION PROCESS FOR HIGH RESOLUTION LITHOGRAPHY MASKS USING EVAPORATED OR PLASMA ASSISTED ELECTRON SENSITIVE RESISTS WITH PLATING IMAGE REVERSAL 审中-公开
标题翻译：使用蒸镀或等离子体辅助电子敏感材料制作高分辨率光刻掩模与电镀图像反转
公开(公告)号：WO2005015308A3
公开(公告)日：2005-07-28
申请号：PCT/CA2004001010
申请日：2004-07-08
申请人： QUANTISCRIPT INC , LAVALLEE ERIC , BEAUVAIS JACQUES , DROUIN DOMINIQUE
发明人： LAVALLEE ERIC , BEAUVAIS JACQUES , DROUIN DOMINIQUE
IPC分类号： G03F1/20 , G03F1/22 , G03F1/68 , G03F1/78 , G03F1/14 , G03F1/08
CPC分类号： G03F1/22 , G03F1/20 , G03F1/78
摘要： The present invention relates to a method for fabricating a high resolution lithography mask, comprising providing a blank mask, coating the blank mask with a conductive layer, depositing a negative electron-sensitive resist layer on the conductive layer, applying an electron beam irradiation to the negative electron-sensitive resist layer to form patterns of non-soluble resist, dissolving the negative electron-sensitive resist layer to leave on the conductive layer only the patterns of non-soluble resist, plating an etchresistant material on the conductive layer to invert the patterns, and conducting a directional etch through the patterns not protected by the plated etch-resistant material to transfer these patterns into the blank mask.
摘要翻译：本发明涉及一种用于制造高分辨率光刻掩模的方法，包括提供空白掩模，用导电层涂覆空白掩模，在导电层上沉积负电子敏感抗蚀剂层，将电子束照射施加到负电子敏感抗蚀剂层以形成不溶性抗蚀剂的图案，溶解负电子抗蚀剂层以在导电层上仅留下不溶性抗蚀剂的图案，在导电层上电镀耐蚀刻材料以使图案反转并且通过未经电镀的抗蚀刻材料保护的图案进行定向蚀刻以将这些图案转移到空白掩模中。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式