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1. 发明申请

WO2007075996A3 APPARATUS AND METHOD FOR A FAST RECOVERY RECTIFIER STRUCTURE 审中-公开
标题翻译：快速恢复整流器结构的装置和方法
公开(公告)号：WO2007075996A3
公开(公告)日：2007-08-30
申请号：PCT/US2006048986
申请日：2006-12-20
申请人： QSPEED SEMICONDUCTOR INC , FRANCIS RICHARD , FAN YANG YU , JOHNSON ERIC , HOANG HY
发明人： FRANCIS RICHARD , FAN YANG YU , JOHNSON ERIC , HOANG HY
IPC分类号： H01L29/872 , H01L27/07 , H01L29/772
CPC分类号： H01L29/872 , H01L27/0641 , H01L27/0814 , H01L27/0817 , H01L29/0623 , H01L29/7722 , H01L29/8083 , H01L29/861 , H01L29/8725
摘要： An apparatus and method for a fast recovery rectifier structure. Specifically, the structure includes a substrate (120) of a first dopant. A first epitaxial layer (140) lightly doped with the first dopant is coupled to the substrate. A first metallization layer (190) is coupled to the first epitaxial layer. A plurality of trenches (175) is recessed into the first epitaxial layer, each of which is coupled to the metallization layer. The device also includes a plurality of wells each doped with a second dopant type, wherein each well is formed beneath and adjacent to a corresponding trench. A plurality of oxide layers (170) is formed on walls and a bottom of a corresponding trench. A plurality of channel regions doped with the first dopant is formed within the first epitaxial layer between two corresponding wells. Each of the plurality of channel regions (150) is more highly doped with the first dopant than the first epitaxial layer.
摘要翻译：一种快速恢复整流器结构的装置和方法。具体地，该结构包括第一掺杂剂的衬底（120）。轻掺杂有第一掺杂剂的第一外延层（140）被耦合到衬底。第一金属化层（190）耦合到第一外延层。多个沟槽（175）凹陷到第一外延层中，每个沟槽耦合到金属化层。该器件还包括多个阱，每个阱均掺杂有第二掺杂剂类型，其中每个阱形成在相应沟槽的下面并与其相邻。多个氧化物层（170）形成在相应沟槽的壁和底部上。掺杂有第一掺杂剂的多个沟道区在两个对应的阱之间的第一外延层内形成。多个通道区域（150）中的每一个与第一外延层相比第一掺杂物更加高掺杂。

2. 发明申请

WO2007076056A3 ULTRAFAST RECOVERY DIODE 审中-公开
标题翻译：超快恢复二极管
公开(公告)号：WO2007076056A3
公开(公告)日：2007-09-20
申请号：PCT/US2006049118
申请日：2006-12-19
申请人： QSPEED SEMICONDUCTOR INC , FRANCIS RICHARD , LI JIAN , FAN YANG YU , JOHNSON ERIC
发明人： FRANCIS RICHARD , LI JIAN , FAN YANG YU , JOHNSON ERIC
IPC分类号： H01L29/872 , H01L29/36 , H01L29/861 , H01L29/868
CPC分类号： H01L29/872 , H01L29/0619 , H01L29/739 , H01L29/861 , H01L29/868 , H01L2924/0002 , H01L2924/00
摘要： An ultrafast recovery diode. In a first embodiment, a rectifier device comprises a substrate of a first polarity, a lightly doped layer of the first polarity coupled to the substrate and a metallization layer disposed with the lightly doped layer. The ultrafast recovery diode includes a plurality of wells, separated from one another, formed in the lightly doped layer, comprising doping of a second polarity. The plurality of wells connect to the metallization layer. The ultrafast recovery diode further includes a plurality of regions, located between wells of said plurality of wells, more highly doped of the first polarity than the lightly doped layer.
摘要翻译：超快恢复二极管。在第一实施例中，整流器件包括第一极性的衬底，耦合到衬底的第一极性的轻掺杂层和与轻掺杂层一起设置的金属化层。超快恢复二极管包括在轻掺杂层中形成的彼此分离的多个阱，包括掺杂第二极性。多个阱连接到金属化层。超快恢复二极管还包括位于所述多个阱的阱之间的多个区，比轻掺杂层更加掺杂第一极性。

3. 发明申请

WO2007015903A2 HIGH VOLTAGE NON PUNCH THROUGH IGBT FOR SWITCH MODE POWER SUPPLIES 审中-公开
标题翻译：用于切换模式电源的IGBT的高电压非直流电源
公开(公告)号：WO2007015903A2
公开(公告)日：2007-02-08
申请号：PCT/US2006028005
申请日：2006-07-19
申请人： INT RECTIFIER CORP , FRANCIS RICHARD , NG CHIU
发明人： FRANCIS RICHARD , NG CHIU
IPC分类号： H01L21/332
CPC分类号： H01L29/7395 , H01L29/0834 , H01L29/41725 , H01L29/66333 , Y10S438/904
摘要： A process for forming an NPT IGBT in a thin N type silicon wafer in which the bottom surface of a thin silicon wafer (100 microns thick or less) has a shallow reduced lifetime region in its bottom formed by a light species atom implant to a depth of less than about 2.5 microns. A P + transparent collector region about 0.5 microns deep is formed in the bottom of the damaged region by a boron implant. A collector contact of A1/Ti/NiV and Ag is sputtered onto the collector region and is annealed at 200°C to 400°C for 30 to 60 minutes. A pre-anneal step before applying the collector metal can be carried out in vacuum at 300°C to 400°C for 30 to 60 seconds.
摘要翻译：一种用于在薄N型硅晶片中形成NPT IGBT的工艺，其中薄硅晶片的底表面（100微米厚或更小）在其底部具有浅的生命周期区域，其通过光物质原子注入形成深度小于约2.5微米。通过硼注入在损伤区域的底部形成约0.5微米深的P + 将Al / Ti / NiV和Ag的集电极触点溅射到集电极区域，并在200℃至400℃下退火30至60分钟。在施加集电体金属之前的预退火步骤可以在300℃至400℃的真空中进行30至60秒。

4. 发明申请

WO2009097165A2 ORDERED COATINGS FOR DRUG ELUTING STENTS AND MEDICAL DEVICES 审中-公开
标题翻译：用于药物治疗和医疗器械的订购涂料
公开(公告)号：WO2009097165A2
公开(公告)日：2009-08-06
申请号：PCT/US2009030077
申请日：2009-01-05
申请人： MEDTRONIC VASCULAR INC , TEDESCHI EUGENE , FRANCIS RICHARD , BIRDSALL MATTHEW
发明人： TEDESCHI EUGENE , FRANCIS RICHARD , BIRDSALL MATTHEW
IPC分类号： A61L31/10 , A61L31/16
CPC分类号： A61L31/10 , A61L31/16 , A61L2300/00 , A61L2300/602 , A61L2420/08
摘要： A system for treating a vascular condition comprises a therapeutic agent eluting stent having a layered coating on the stent framework. The coating releases therapeutically effective amounts of one or more therapeutic agents in and ordered sequence and over a selected time period. Another embodiment of the invention includes a method of treating a vascular condition by placing a stent having a layered coating at a treatment site and delivering a therapeutically effective amount of one or more therapeutic agents at the treatment site in an ordered sequence and over a selected time period.
摘要翻译：用于治疗血管病症的系统包括在支架框架上具有层状涂层的治疗剂洗脱支架。涂层释放治疗有效量的一种或多种治疗剂，并且在有选择的时间内排序和排序。本发明的另一个实施方案包括通过将具有层状涂层的支架放置在治疗部位并以有序序列并在选定时间内在治疗部位递送治疗有效量的一种或多种治疗剂来治疗血管病症的方法期。

5. 发明申请

WO2007130786A3 MEDICAL DEVICE HAVING COATING WITH ZEOLITE DRUG RESERVOIRS 审中-公开
标题翻译：具有ZEOLITE DRUG RESERVOIRS的涂层的医疗装置
公开(公告)号：WO2007130786A3
公开(公告)日：2009-04-09
申请号：PCT/US2007066928
申请日：2007-04-19
申请人： MEDTRONIC VASCULAR INC , FRANCIS RICHARD
发明人： FRANCIS RICHARD
IPC分类号： A61L31/10 , A61L31/14 , A61L31/16
CPC分类号： A61L31/10 , A61L31/146 , A61L31/16 , A61L2300/602 , A61L2300/606 , A61L2420/04
摘要： A medical device having a drug-eluting coating that includes a pharmaceutical compound or, more generally, a therapeutic material housed within pores of a zeolite carrier. The zeolite carrier has an open porous structure with reservoirs for holding the therapeutic material. The therapeutic material loaded zeolites may be suspended or dispersed within a bioerodible polymer matrix to provide controlled delivery of the therapeutic material. Zeolite drug carriers may have enhanced or optimally engineered pore sizes for a particular therapeutic material and release profile. Along with a therapeutic material, reservoirs of a zeolite drug delivery system may include a release agent. The release agent may be used to entrap the therapeutic material until such time as a triggering condition is met that prompts the release agent to activate and thereby release the therapeutic material from the zeolite reservoir.
摘要翻译：一种具有药物洗脱涂层的医疗装置，其包括药物化合物或更一般地，容纳在沸石载体的孔内的治疗材料。沸石载体具有开放的多孔结构，其具有用于保持治疗材料的储存器。负载治疗材料的沸石可以悬浮或分散在生物可腐蚀的聚合物基质中以提供治疗材料的受控递送。沸石药物载体可以具有用于特定治疗材料和释放曲线的增强或最佳设计的孔径。与治疗材料一起，沸石药物递送系统的储存器可以包括脱模剂。释放剂可以用于捕获治疗材料，直到达到触发条件的时间，促使脱模剂活化，从而从沸石储存器释放治疗材料。

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