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    • 4. 发明申请
    • LIGHT EMITTING DEVICES AND DISPLAYS WITH IMPROVED PERFORMANCE
    • 具有改进性能的发光装置和显示器
    • WO2008063657A3
    • 2008-08-28
    • PCT/US2007024310
    • 2007-11-21
    • QD VISION INCRAMPRASAD DORAICOX MARSHALLMISIC MEADSTECKEL JONATHAN SROUSH CAROLINE JKAZLAS PETER TCOE-SULLIVAN SETHBREEN CRAIG
    • RAMPRASAD DORAICOX MARSHALLMISIC MEADSTECKEL JONATHAN SROUSH CAROLINE JKAZLAS PETER TCOE-SULLIVAN SETHBREEN CRAIG
    • F21V5/08
    • C09K11/565B82Y20/00B82Y30/00H01L51/5012H05B33/14
    • Light emitting devices and devices with improved performance are disclosed. In one embodiment, a light emitting device includes an emissive material disposed between a first electrode, and a second electrode, wherein the emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation, wherein the light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. Also disclosed is a display including at least one light emitting device including an emissive material disposed between a first electrode, and a second electrode, wherein the at least one light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. In another embodiment, a light emitting device includes an emissive material disposed between a first electrode and a second electrode. The emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation. The device further includes a first spacer material disposed between the emissive material and the first electrode. In certain embodiments, the device further includes a first material capable of transporting charge disposed between the emissive material and the first electrode, wherein the first spacer material is disposed between the emissive material and the first electrode. In certain embodiments, for example, light emitting devices can have a maximum peak emission in a range from about 380nm to about 500nm. In certain embodiments, the light emitting device can have a maximum peak emission peak in the range from about 450nm to about 490nm. Displays including light emitting devices are also disclosed.
    • 公开了具有改进性能的发光器件和器件。 在一个实施例中,发光器件包括设置在第一电极和第二电极之间的发光材料,其中发射材料包含能够发射包括在激发的光谱的蓝色区域中的最大峰值发射的光的半导体纳米晶体,其中 发光器件可以具有至少约1.0%的峰值外部量子效率。 还公开了一种显示器,其包括至少一个包括设置在第一电极和第二电极之间的发光材料的发光器件,其中所述至少一个发光器件可以具有至少约1.0%的峰值外部量子效率。 在另一个实施例中,发光器件包括设置在第一电极和第二电极之间的发光材料。 发射材料包括能够发射光的半导体纳米晶体,其包括在激发时在光谱的蓝色区域中的最大峰值发射。 该装置还包括设置在发光材料和第一电极之间的第一间隔物材料。 在某些实施例中,该装置还包括能够传输设置在发光材料和第一电极之间的电荷的第一材料,其中第一间隔物材料设置在发光材料和第一电极之间。 在某些实施例中,例如,发光器件可以具有在约380nm至约500nm范围内的最大峰值发射。 在某些实施例中,发光器件可具有在约450nm至约490nm范围内的最大峰值发射峰值。 还公开了包括发光器件的显示器。
    • 7. 发明申请
    • FLEXIBLE DEVICES INCLUDING SEMICONDUCTOR NANOCRYSTALS, ARRAYS, AND METHODS
    • 包括半导体纳米晶体的柔性器件,阵列和方法
    • WO2009099425A3
    • 2009-12-30
    • PCT/US2008013504
    • 2008-12-08
    • QD VISION INCKAZLAS PETER TCOX MARSHALLCOE-SULLIVAN SETHKYMISSIS IOANNIS
    • KAZLAS PETER TCOX MARSHALLCOE-SULLIVAN SETHKYMISSIS IOANNIS
    • B32B19/00
    • H01L51/502B82Y20/00H01L27/3293H01L51/0037H01L51/5203H01L51/5237H01L51/5246H01L51/5253H01L51/5259H01L2251/5338
    • The present invention relates to flexible devices including semiconductor nanocrystals, arrays including such devices, systems including the foregoing, and related methods. In one embodiment, a flexible light-emitting device includes a flexible substrate including a first electrode, an emissive layer comprising semiconductor nanocrystals disposed over the substrate, and second electrode disposed over the emissive layer comprising semiconductor nanocrystals, wherein, when the device is curved, the emissive layer comprising semiconductor nanocrystals lies substantially in the neutral plane of the device. In another embodiment, a light-emitting device includes an emissive layer comprising semiconductor nanocrystals disposed between two flexible substrates, a first electrode disposed over the emissive layer comprising semiconductor nanocrystals, and a second electrode disposed under the emissive layer comprising semiconductor nanocrystals. In certain preferred embodiments, at least one charge transport layer is disposed between one of the electrodes and the layer comprising semiconductor nanocrystals.
    • 本发明涉及包括半导体纳米晶体的柔性器件,包括这种器件的阵列,包括前述的系统以及相关方法。 在一个实施例中,柔性发光器件包括柔性衬底,其包括第一电极,包含设置在衬底上的半导体纳米晶体的发射层和设置在包含半导体纳米晶体的发射层上的第二电极,其中当器件弯曲时, 包括半导体纳米晶体的发射层基本上位于器件的中性平面中。 在另一个实施例中,发光器件包括发射层,发射层包括设置在两个柔性衬底之间的半导体纳米晶体,设置在包含半导体纳米晶体的发射层上的第一电极以及设置在包含半导体纳米晶体的发射层下方的第二电极。 在某些优选实施例中,至少一个电荷传输层设置在电极之一和包含半导体纳米晶体的层之间。
    • 9. 发明申请
    • LIGHT-EMITTING DEVICES AND DISPLAYS WITH IMPROVED PERFORMANCE
    • 具有改进性能的发光设备和显示器
    • WO2007143197A2
    • 2007-12-13
    • PCT/US2007013152
    • 2007-06-04
    • QD VISION INCCOE-SULLIVAN SETHRAMPRASAD DORAIKYMISSIS IOANNISBULOVIC VLADIMIRCOX MARSHALLROUSH CAROLINE JKAZLAS PETER TSTECKEL JONATHAN S
    • COE-SULLIVAN SETHRAMPRASAD DORAIKYMISSIS IOANNISBULOVIC VLADIMIRCOX MARSHALLROUSH CAROLINE JKAZLAS PETER TSTECKEL JONATHAN S
    • H01S5/30
    • H01L33/06B82Y20/00B82Y30/00C09K11/02C09K11/565C09K11/883H01L27/156H01L33/0029H01L33/28H01L51/5012H01L51/502H05B33/145
    • Light-emitting devices and displays with improved performance are disclosed. A light-emitting device includes an emissive material disposed between a first electrode, and a second electrode. Various embodiments include a device having a peak external quantum efficiency of at least about 2.2 %; a device that emits light having a CIE color coordinate of x greater than 0.63; a device having an external quantum efficiency of at least about 2.2 percent when measured at a current density of 5 mA/cm 2 . Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a peak luminescent efficiency of at least about 1.5 lumens per watt. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting red light upon excitation, wherein the device has a luminescent efficiency of at least about 1.5 lumens per watt when measured at a current density of 5 milliamps/square centimeter. Also disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has a peak external quantum efficiency of at least about 1.1 percent. Further disclosed is a light- emitting device comprising a plurality of semiconductor nanocrystals, wherein the device has a luminescent efficiency of at least about 3 lumens per watt when measured at a current density of 5 mA/cm 2 . Further disclosed is a light-emitting device comprising a plurality of semiconductor nanocrystals capable of emitting green light upon excitation, wherein the device has an external quantum efficiency of at least about 2% when measured at a current density of 5 mA/cm 2 . Other light-emitting devices and displays with improved performance are disclosed. Also disclosed are methods for preparing and for purifying semiconductor nanocrystals.
    • 公开了具有改进性能的发光装置和显示器。 发光装置包括设置在第一电极和第二电极之间的发光材料。 各种实施方案包括具有至少约2.2%的峰值外部量子效率的器件; 发射具有x大于0.63的CIE色坐标的光的装置; 当在5mA / cm 2的电流密度下测量时,具有至少约2.2%的外部量子效率的器件。 还公开了包括能够在激发时发射红光的多个半导体纳米晶体的发光器件,其中该器件具有至少约1.5流明/瓦特的峰值发光效率。 还公开了一种发光器件,其包括能够在激发时发射红光的多个半导体纳米晶体,其中当以5毫安/平方厘米的电流密度测量时,该器件具有至少约1.5流明/瓦特的发光效率。 还公开了一种发光器件,其包括在激发时能够发射绿光的多个半导体纳米晶体,其中该器件具有至少约1.1%的峰值外部量子效率。 还公开了一种包括多个半导体纳米晶体的发光器件,其中当以5mA / cm 2的电流密度测量时,该器件具有至少约3流明/瓦特的发光效率。 进一步公开的是一种发光器件,其包括能够在激发时发出绿光的多个半导体纳米晶体,其中当以5mA / cm 2的电流密度测量时,该器件具有至少约2%的外部量子效率, 2 。 公开了其他具有改进性能的发光装置和显示器。 还公开了制备和纯化半导体纳米晶体的方法。
    • 10. 发明申请
    • QUANTUM DOT LIGHT ENHANCEMENT SUBSTRATE AND LIGHTING DEVICE INCLUDING SAME
    • 量子点光增强基板和包括其的照明装置
    • WO2009014707A2
    • 2009-01-29
    • PCT/US2008008924
    • 2008-07-23
    • QD VISION INCKAZLAS PETER TCOE-SULLIVAN SETH
    • KAZLAS PETER TCOE-SULLIVAN SETH
    • H01L51/00
    • H01L33/06H01L27/322H01L33/04H01L33/42H01L33/50H01L33/507H01L33/58H01L33/60H01L51/5088H01L51/5268H01L51/56H05B33/145
    • A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer comprising a conductive material (e.g., indium-tin-oxide) disposed over the at least one layer. (Embodiments of such component are also referred to herein as a QD light-enhancement substrate (QD-LES).) In certain preferred embodiments, the substrate is transparent to light, for example, visible light, ultraviolet light, and/or infrared radiation. In certain embodiments, the substrate is flexible. In certain embodiments, the substrate includes an outcoupling element (e.g., a microlens array). A film including a color conversion material comprising quantum dots and a conductive material is also provided. In certain embodiments, a component includes a film described herein. Lighting devices are also provided. In certain embodiments, a lighting device includes a film described herein. In certain embodiments, a lighting device includes a component described herein.
    • 包括衬底的组件,包括设置在衬底上的包括量子点的颜色转换材料的至少一个层以及设置在至少一个层上的导电材料(例如,氧化铟锡)的层。 (这种组件的实施例在本文中也称为QD光增强基板(QD-LES)。)在某些优选实施例中,基板对光是透明的,例如可见光,紫外光和/或红外辐射 。 在某些实施方案中,基底是柔性的。 在某些实施例中,衬底包括外耦合元件(例如,微透镜阵列)。 还提供了包括包括量子点和导电材料的颜色转换材料的膜。 在某些实施方案中,组分包括本文所述的膜。 还提供照明设备。 在某些实施例中,照明装置包括本文所述的膜。 在某些实施例中,照明装置包括本文所述的部件。