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    • 3. 发明申请
    • LIGHT EMITTING DEVICES AND DISPLAYS WITH IMPROVED PERFORMANCE
    • 具有改进性能的发光装置和显示器
    • WO2008063657A3
    • 2008-08-28
    • PCT/US2007024310
    • 2007-11-21
    • QD VISION INCRAMPRASAD DORAICOX MARSHALLMISIC MEADSTECKEL JONATHAN SROUSH CAROLINE JKAZLAS PETER TCOE-SULLIVAN SETHBREEN CRAIG
    • RAMPRASAD DORAICOX MARSHALLMISIC MEADSTECKEL JONATHAN SROUSH CAROLINE JKAZLAS PETER TCOE-SULLIVAN SETHBREEN CRAIG
    • F21V5/08
    • C09K11/565B82Y20/00B82Y30/00H01L51/5012H05B33/14
    • Light emitting devices and devices with improved performance are disclosed. In one embodiment, a light emitting device includes an emissive material disposed between a first electrode, and a second electrode, wherein the emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation, wherein the light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. Also disclosed is a display including at least one light emitting device including an emissive material disposed between a first electrode, and a second electrode, wherein the at least one light emitting device can have a peak external quantum efficiency of at least about 1.0 percent. In another embodiment, a light emitting device includes an emissive material disposed between a first electrode and a second electrode. The emissive material comprises semiconductor nanocrystals capable of emitting light including a maximum peak emission in the blue region of the spectrum upon excitation. The device further includes a first spacer material disposed between the emissive material and the first electrode. In certain embodiments, the device further includes a first material capable of transporting charge disposed between the emissive material and the first electrode, wherein the first spacer material is disposed between the emissive material and the first electrode. In certain embodiments, for example, light emitting devices can have a maximum peak emission in a range from about 380nm to about 500nm. In certain embodiments, the light emitting device can have a maximum peak emission peak in the range from about 450nm to about 490nm. Displays including light emitting devices are also disclosed.
    • 公开了具有改进性能的发光器件和器件。 在一个实施例中,发光器件包括设置在第一电极和第二电极之间的发光材料,其中发射材料包含能够发射包括在激发的光谱的蓝色区域中的最大峰值发射的光的半导体纳米晶体,其中 发光器件可以具有至少约1.0%的峰值外部量子效率。 还公开了一种显示器,其包括至少一个包括设置在第一电极和第二电极之间的发光材料的发光器件,其中所述至少一个发光器件可以具有至少约1.0%的峰值外部量子效率。 在另一个实施例中,发光器件包括设置在第一电极和第二电极之间的发光材料。 发射材料包括能够发射光的半导体纳米晶体,其包括在激发时在光谱的蓝色区域中的最大峰值发射。 该装置还包括设置在发光材料和第一电极之间的第一间隔物材料。 在某些实施例中,该装置还包括能够传输设置在发光材料和第一电极之间的电荷的第一材料,其中第一间隔物材料设置在发光材料和第一电极之间。 在某些实施例中,例如,发光器件可以具有在约380nm至约500nm范围内的最大峰值发射。 在某些实施例中,发光器件可具有在约450nm至约490nm范围内的最大峰值发射峰值。 还公开了包括发光器件的显示器。
    • 7. 发明申请
    • DEVICES INCLUDING QUANTUM DOTS AND METHOD
    • 装置包括量子点和方法
    • WO2012138409A3
    • 2012-11-29
    • PCT/US2012023671
    • 2012-02-02
    • QD VISION INCBREEN CRAIG
    • BREEN CRAIG
    • H01B13/00F21Y101/02H01B1/02H01B5/14
    • H01L33/06H01L51/502H01L51/5056H01L51/5072
    • A method for preparing a device, the method comprising: forming a first device layer over a first electrode, the layer comprising a metal oxide formed from a sol-gel composition that does not generate acidic by-products, and forming a second electrode over the first device layer, wherein the method further includes forming a layer comprising quantum dots over the fust electrode before or after formation of the first device layer. Also disclosed is a device comprising a first device layer formed over a first electrode, the first device layer comprising a metal oxide formed by sol-gel processing that does not include acidic by-products, a second electrode over the first device layer, and a layer comprising quantum dots disposed between the first device layer and one of the two electrodes. A device prepared by the method is also disclosed.
    • 一种用于制备器件的方法,该方法包括:在第一电极上形成第一器件层,该第一器件层包括由不产生酸性副产物的溶胶 - 凝胶组合物形成的金属氧化物,以及在第一电极上方形成第二电极 第一器件层,其中该方法还包括在形成第一器件层之前或之后在第一电极上方形成包括量子点的层。 还公开了一种包括形成在第一电极上的第一器件层的器件,第一器件层包含通过溶胶 - 凝胶处理形成的不包含酸性副产物的金属氧化物,第一器件层上的第二电极和 该层包括设置在第一器件层和两个电极之一之间的量子点。 还公开了通过该方法制备的装置。
    • 10. 发明申请
    • SEMICONDUCTOR NANOCRYSTALS AND COMPOSITIONS AND DEVICES INCLUDING SAME
    • 半导体纳米晶体和组合物及其装置
    • WO2008063658A2
    • 2008-05-29
    • PCT/US2007024312
    • 2007-11-21
    • QD VISION INCBREEN CRAIGSTECKEL JONATHAN SRAMPRASAD DORAI
    • BREEN CRAIGSTECKEL JONATHAN SRAMPRASAD DORAI
    • H01L29/00
    • H01L33/06B82Y20/00B82Y30/00C09K11/02C09K11/565C09K11/883H01L29/225H01L33/0029H01L33/28Y10S977/774Y10S977/95Y10T428/2991Y10T428/2993
    • A semiconductor nanocrystal including a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with an improved photoluminescence quantum efficiency. Also disclosed are populations of semiconductor nanocrystals, compositions and devices including a semiconductor nanocrystal capable of emitting light with an improved photoluminescence quantum efficiency. In one embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light upon excitation with a photoluminescence quantum efficiency greater than about 65%. In another embodiment, a semiconductor nanocrystal includes a core comprising a first semiconductor material comprising zinc, cadmium, and sulfur and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material. In a further embodiment, a semiconductor nanocrystal includes a core comprises a first semiconductor material comprising at least three chemical elements and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material comprising at least three chemical elements, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation. In a further embodiment, a semiconductor nanocrystal including a core comprises a first semiconductor material comprising zinc, cadmium, and selenium and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the semiconductor nanocrystal is capable of emitting light with a photoluminescence quantum efficiency greater than about 60% upon excitation.
    • 一种包括芯的半导体纳米晶体,包括包含至少三个化学元素的第一半导体材料和设置在所述芯的至少一部分上的壳,所述壳包括第二半导体材料,其中所述半导体纳米晶体能够发射具有改进的 光致发光量子效率。 还公开了半导体纳米晶体,组合物和器件的种群,其包括能够发射具有改善的光致发光量子效率的光的半导体纳米晶体。 在一个实施例中,半导体纳米晶体包括芯,其包括包含至少三个化学元素的第一半导体材料和设置在芯的至少一部分上的壳,壳包括第二半导体材料,其中半导体纳米晶体能够发射 在光致发光量子效率大于约65%的激发下发光。 在另一个实施例中,半导体纳米晶体包括芯,其包括包含锌,镉和硫的第一半导体材料和设置在芯的至少一部分上的外壳,壳包括第二半导体材料。 在另一实施例中,半导体纳米晶体包括芯,其包括包含至少三个化学元件的第一半导体材料和设置在芯的至少一部分上的外壳,壳包括包含至少三个化学元素的第二半导体材料,其中 半导体纳米晶体在激发时能够发射光致发光量子效率大于约60%的光。 在另一个实施例中,包括芯的半导体纳米晶体包括包含锌,镉和硒的第一半导体材料和设置在芯的至少一部分上的外壳,壳包括第二半导体材料,其中半导体纳米晶体能够 在激发时具有大于约60%的光致发光量子效率的光发射。