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1. 发明授权

US07270885B1 Method for brazing ceramic-containing bodies, and articles made thereby 失效
标题翻译：钎焊含陶瓷体的方法及由此制成的制品
公开(公告)号：US07270885B1
公开(公告)日：2007-09-18
申请号：US10990279
申请日：2004-11-15
申请人： Prashant G. Karandikar , Marlene Rossing, legal representative
发明人： Barry R. Rossing, deceased
IPC分类号： B32B9/00
CPC分类号： B23K35/286 , B23K2101/34 , B23K2103/166 , B23K2103/18 , B23K2103/52 , C04B37/006 , C04B37/026 , C04B2237/121 , C04B2237/16 , C04B2237/36 , C04B2237/365 , C04B2237/366 , C04B2237/60 , H01L21/6831
摘要： Ceramic-containing bodies can be bonded to other ceramic-containing bodies, or to metals or metal-containing bodies, by way of an aluminum-silicon brazing alloy. Such alloys feature high thermal conductivity and a melting range intermediate to Cu—Sil and Au—Si. By metallizing the surface of an aluminum- or silicon-containing ceramic body, for example, with silicon or aluminum, the formation of deleterious intermetallic phases at the brazing interface is avoided. This technique is particularly useful for joining reaction-bonded silicon carbide (RBSC) composite bodies, and particularly such composite bodies that contain appreciable amounts of aluminum as a metallurgical modification of the residual silicon phase. Interestingly, when the RBSC body contains minor amounts of the aluminum alloying constituent, or none, the metallization layer is not required. The resulting bonded structures have utility as mirrors, as packaging for electronics, and in semiconductor lithography equipment, e.g., as electrostatic chucks for supporting a silicon wafer during the lithography process.
摘要翻译：含有陶瓷的物体可以通过铝硅钎焊合金与其它含陶瓷体或金属或含金属体结合。这种合金具有高导热性和中间至Cu-Sil和Au-Si的熔化范围。通过例如用硅或铝将含铝或硅的陶瓷体的表面金属化，可以避免在钎焊界面处形成有害的金属间相。这种技术对于接合反应粘合的碳化硅（RBSC）复合体，特别是含有可观量的铝作为残余硅相的冶金改性的复合体特别有用。有趣的是，当RBSC体含有少量的铝合金成分时，或者不含有金属化层。所得到的结合结构具有作为反射镜的用途，作为用于电子器件的封装以及半导体光刻设备，例如用于在光刻工艺期间支撑硅晶片的静电卡盘。

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