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1. 发明授权

US07727703B2 Methods of fabricating an electronic device and an sililation polyvinyl phenol for a dielectric layer of an electronic device 失效
标题翻译：制造电子器件的电子器件的方法和用于电子器件的电介质层的硅烷化聚苯乙烯
公开(公告)号：US07727703B2
公开(公告)日：2010-06-01
申请号：US11594154
申请日：2006-11-08
申请人： Po-Yuan Lo , Feng-Yu Yang , Zing-Way Pei
发明人： Po-Yuan Lo , Feng-Yu Yang , Zing-Way Pei
IPC分类号： G03F7/00 , G03F7/004 , G03F7/075
CPC分类号： H01L51/052 , Y10S430/106
摘要： A method of fabricating an electronic device is disclosed. The method of fabricating an electronic device comprises providing a substrate. A first conductive layer is formed on the substrate. A silylation polyphenol (PVP) dielectric layer is formed on the first conductive layer. A patterned second conductive layer is formed on the silylation PVP dielectric layer.
摘要翻译：公开了一种制造电子设备的方法。制造电子器件的方法包括提供衬底。在基板上形成第一导电层。在第一导电层上形成甲硅烷化多酚（PVP）介电层。在甲硅烷基化PVP介电层上形成图案化的第二导电层。

2. 发明申请

US20080063983A1 Methods of fabricating a electronic device and a sililation polyvinyl phenol for a dielectric layer of an electronic device 失效
标题翻译：制造电子器件用电介质层的电子器件和硅烷化聚苯乙烯的方法
公开(公告)号：US20080063983A1
公开(公告)日：2008-03-13
申请号：US11594154
申请日：2006-11-08
申请人： Po-Yuan Lo , Feng-Yu Yang , Zing-Way Pei
发明人： Po-Yuan Lo , Feng-Yu Yang , Zing-Way Pei
IPC分类号： G03F7/00
CPC分类号： H01L51/052 , Y10S430/106
摘要： A method of fabricating an electronic device is disclosed. The method of fabricating an electronic device comprises providing a substrate. A first conductive layer is formed on the substrate. A silylation polyphenol (PVP) dielectric layer is formed on the first conductive layer. A patterned second conductive layer is formed on the silylation PVP dielectric layer.
摘要翻译：公开了一种制造电子设备的方法。制造电子器件的方法包括提供衬底。在基板上形成第一导电层。在第一导电层上形成甲硅烷化多酚（PVP）介电层。在甲硅烷基化PVP介电层上形成图案化的第二导电层。

3. 发明申请

US20070238318A1 Method of fabricating a semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20070238318A1
公开(公告)日：2007-10-11
申请号：US11510294
申请日：2006-08-25
申请人： Hui-Lin Hsu , Tri-Rung Yew , Po-Yuan Lo , Zing-Way Pei
发明人： Hui-Lin Hsu , Tri-Rung Yew , Po-Yuan Lo , Zing-Way Pei
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L51/052 , C08L65/00 , C08L79/02 , H01L51/0036
摘要： A method of fabricating a semiconductor device is provided. The method of fabricating the semiconductor device comprises a substrate. A polyacrylonitrile (PAN) powder is dissolved in a solvent and the solvent is heated to form a PAN solution. The PAN solution is cooled down and the PAN solution is then formed on the substrate. The PAN solution is allowed to stand and the solvent in the PAN solution is then removed to form a PAN dielectric layer on the substrate. A patterned conductive layer is formed on the PAN dielectric layer.
摘要翻译：提供一种制造半导体器件的方法。制造半导体器件的方法包括衬底。将聚丙烯腈（PAN）粉末溶解在溶剂中，加热溶剂形成PAN溶液。将PAN溶液冷却，然后在基板上形成PAN溶液。使PAN溶液静置，然后除去PAN溶液中的溶剂，以在基材上形成PAN介电层。在PAN介电层上形成有图案的导电层。

4. 发明申请

US20070155064A1 Method for manufacturing carbon nano-tube FET 审中-公开
标题翻译：制造碳纳米管FET的方法
公开(公告)号：US20070155064A1
公开(公告)日：2007-07-05
申请号：US11430938
申请日：2006-05-10
申请人： Bae-Horng Chen , Jeng-Hua Wei , Po-Yuan Lo , Zing-Way Pei
发明人： Bae-Horng Chen , Jeng-Hua Wei , Po-Yuan Lo , Zing-Way Pei
IPC分类号： H01L21/8232 , H01L21/335
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/002 , H01L51/0545 , H01L51/0558
摘要： A method for manufacturing a carbon nano-tube field-effect transistor (CNT-FET), comprising steps of: forming a patterned conductive layer on a substrate; forming a dielectric layer covering the conductive layer and the substrate; forming a carbon nano-tube layer between a pair of electrodes on the dielectric layer; and performing a treatment process on the carbon nano-tube layer so that the carbon nano-tube layer is semiconducting.
摘要翻译：一种制造碳纳米管场效应晶体管（CNT-FET）的方法，包括以下步骤：在衬底上形成图案化的导电层; 形成覆盖所述导电层和所述基板的电介质层; 在介电层上的一对电极之间形成碳纳米管层; 并对碳纳米管层进行处理工艺，使得碳纳米管层是半导体的。

5. 发明申请

US20070045612A1 Organic thin film transistor and fabricating method thereof 审中-公开
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20070045612A1
公开(公告)日：2007-03-01
申请号：US11439345
申请日：2006-05-24
申请人： Po-Yuan Lo , Zing-Way Pei
发明人： Po-Yuan Lo , Zing-Way Pei
IPC分类号： H01L29/08
CPC分类号： H01L51/0516 , H01L51/0545
摘要： An organic thin film transistor and a method for fabricating the same are provided. A multi-dielectric layer of the organic thin-film transistor is disposed on the substrate and the gate electrode, and then the organic layers-of the organic thin film transistor, the source and drain are produced. Because of the isolation effect of the multi-dielectric layer, the hydrophilic and lipophilic processes do not affect each other during the manufacturing of the organic thin film transistor. In addition, the multi-dielectric layer includes at least one organic dielectric layer and at least one liquid state deposited oxide silicon thin film.
摘要翻译：提供有机薄膜晶体管及其制造方法。有机薄膜晶体管的多电介质层设置在基板和栅电极上，然后产生有机薄膜晶体管，源极和漏极的有机层。由于多介电层的隔离效应，在制造有机薄膜晶体管期间，亲水和亲脂性方法不会相互影响。此外，多介电层包括至少一个有机电介质层和至少一个液态沉积氧化物硅薄膜。

6. 发明申请

US20120108697A1 Composition and Polymer 有权
标题翻译：组合物和聚合物
公开(公告)号：US20120108697A1
公开(公告)日：2012-05-03
申请号：US13094138
申请日：2011-04-26
申请人： Feng-Yu Yang , Meei-Yu Hsu , Gue-Wuu Hwang , Po-Yuan Lo
发明人： Feng-Yu Yang , Meei-Yu Hsu , Gue-Wuu Hwang , Po-Yuan Lo
IPC分类号： C08J3/28 , C08L39/04 , C08F220/36 , C08F18/20 , C08F220/10 , C08L79/06 , C08L27/12
CPC分类号： H01G4/33 , C08K5/34922 , H01G4/18 , H01L51/004 , H01L51/0043 , H01L51/052 , C08L25/18
摘要： A composition and a polymer are provided. The composition includes the polymer and a melamine derivative. The polymer has a formula of R is hydrogen, halide, alkyl group, alkoxyl group, haloalkyl group or nitro group. n is 1-5 of integer. x+y+z=1, x>0, y≧0, z≧0. The melamine derivative includes R1 is hydrogen, CqH2q+1, or m and q independently is 1-10 of integer. R2, R3 and R4 independently is hydrogen, halide, or C1-C54 alkyl group.
摘要翻译：提供组合物和聚合物。该组合物包括聚合物和三聚氰胺衍生物。该聚合物具有式R为氢，卤素，烷基，烷氧基，卤代烷基或硝基。 n为整数1-5。 x + y + z = 1，x> 0，y≥0，z≥0。三聚氰胺衍生物包括R1是氢，CqH2q + 1或m和q独立地是1-10的整数。 R2，R3和R4独立地是氢，卤化物或C1-C54烷基。

7. 发明授权

US08436068B2 Composition and polymer 有权
标题翻译：组合物和聚合物
公开(公告)号：US08436068B2
公开(公告)日：2013-05-07
申请号：US13094138
申请日：2011-04-26
申请人： Feng-Yu Yang , Meei-Yu Hsu , Gue-Wuu Hwang , Po-Yuan Lo
发明人： Feng-Yu Yang , Meei-Yu Hsu , Gue-Wuu Hwang , Po-Yuan Lo
IPC分类号： C08F2/50 , A61K6/083 , C08G59/32 , C08L39/04 , C09B67/00 , C08F18/20
CPC分类号： H01G4/33 , C08K5/34922 , H01G4/18 , H01L51/004 , H01L51/0043 , H01L51/052 , C08L25/18
摘要： A composition and a polymer are provided. The composition includes the polymer and a melamine derivative. The polymer has a formula of R is hydrogen, halide, alkyl group, alkoxyl group, haloalkyl group or nitro group. n is 1-5 of integer. x+y+z=1, x>0, y≧0, z≧0. The melamine derivative includes R1 is hydrogen, CqH2q+1, or m and q independently is 1-10 of integer. R2, R3 and R4 independently is hydrogen, halide, or C1-C54 alkyl group.
摘要翻译：提供组合物和聚合物。该组合物包括聚合物和三聚氰胺衍生物。该聚合物具有式R为氢，卤素，烷基，烷氧基，卤代烷基或硝基。 n为整数1-5。 x + y + z = 1，x> 0，y> = 0，z> = 0。三聚氰胺衍生物包括R1是氢，CqH2q + 1或m和q独立地是1-10的整数。 R2，R3和R4独立地是氢，卤化物或C1-C54烷基。

8. 发明申请

US20110115034A1 TRANSISTOR 审中-公开
标题翻译：晶体管
公开(公告)号：US20110115034A1
公开(公告)日：2011-05-19
申请号：US12732187
申请日：2010-03-26
申请人： Po-Yuan Lo , Yu-Rung Peng , Tarng-Shiang Hu , Yi-Jen Chan
发明人： Po-Yuan Lo , Yu-Rung Peng , Tarng-Shiang Hu , Yi-Jen Chan
IPC分类号： H01L29/792
CPC分类号： H01L51/0533 , H01L29/4908
摘要： A transistor including a substrate, a gate, a semiconductor layer, a stacked insulating layer and a source and a drain is provided. The gate is disposed on the substrate. The semiconductor layer is disposed on the substrate, and a first type carrier is the main carrier in the semiconductor layer. The stacked insulating layer is disposed between the semiconductor layer and the gate, and includes a first insulating layer and a second insulating layer. The first insulating layer contains a first group withdrawing the first type carrier, the second insulating layer contains a second group withdrawing a second type carrier, and the first insulating layer is disposed between the semiconductor layer and the second insulating layer. The source and the drain are disposed on the substrate and at two sides of the semiconductor layer.
摘要翻译：提供了包括基板，栅极，半导体层，堆叠绝缘层以及源极和漏极的晶体管。栅极设置在基板上。半导体层设置在基板上，第一类型载体是半导体层中的主载流子。堆叠的绝缘层设置在半导体层和栅极之间，并且包括第一绝缘层和第二绝缘层。第一绝缘层包含第一组，第一组退出第一类型载体，第二绝缘层包含第二组，第二组退出第二类型载体，第一绝缘层设置在半导体层和第二绝缘层之间。源极和漏极设置在衬底上并在半导体层的两侧。

9. 发明授权

US07535081B2 Metal nanoline process and applications on growth of aligned nanostructure thereof 失效
标题翻译：金属牛磺酸工艺及其对准纳米结构生长的应用
公开(公告)号：US07535081B2
公开(公告)日：2009-05-19
申请号：US10968891
申请日：2004-10-21
申请人： Ming-Jiunn Lai , Jeng-Hua Wei , Hung-Hsiang Wang , Po-Yuan Lo , Ming-Jer Kao
发明人： Ming-Jiunn Lai , Jeng-Hua Wei , Hung-Hsiang Wang , Po-Yuan Lo , Ming-Jer Kao
IPC分类号： H01L29/06
CPC分类号： H01L29/0676 , B01J23/74 , B01J37/0238 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C01B2202/36 , H01L21/76838 , H01L29/0665 , H01L29/0673 , H01L51/0021 , H01L51/0048 , Y10S977/742
摘要： A metal nanoline process and applications on growth of aligned nanostructures thereof. A nano-structure is provided with a substrate with at least one nanodimensional metal catalyst line disposed thereon and at least one carbon nanotube or silicon nanowire extending along an end of the metal catalyst line.
摘要翻译：一种金属牛磺酸方法及其对齐纳米结构生长的应用。纳米结构设置有具有设置在其上的至少一个纳米金属催化剂线的衬底和沿着金属催化剂线的端部延伸的至少一个碳纳米管或硅纳米线。

10. 发明授权

US06821911B1 Manufacturing method of carbon nanotube transistors 失效
标题翻译：碳纳米管晶体管的制造方法
公开(公告)号：US06821911B1
公开(公告)日：2004-11-23
申请号：US10727500
申请日：2003-12-05
申请人： Po-Yuan Lo , Jih-Shun Chiang , Jeng-Hua Wei , Chien-Liang Hwang , Hung-Hsiang Wang , Ming-Jiunn Lai , Ming-Jer Kao
发明人： Po-Yuan Lo , Jih-Shun Chiang , Jeng-Hua Wei , Chien-Liang Hwang , Hung-Hsiang Wang , Ming-Jiunn Lai , Ming-Jer Kao
IPC分类号： H01L21649
CPC分类号： H01L51/0545 , B82Y10/00 , H01L51/0048 , Y10S977/75 , Y10S977/843 , Y10S977/888
摘要： A manufacturing method of carbon nanotube transistors is disclosed. The steps include: forming an insulating layer on a substrate; forming a first oxide layer on the insulating layer using a solution with cobalt ion catalyst by spin-on-glass (SOG); forming a second oxide layer on the first oxide layer using a solution without the catalyst; forming a blind hole on the second oxide layer using photolithographic and etching processes, the blind hole exposing the first oxide layer, the sidewall of the second oxide layer, and the insulating layer; forming a single wall carbon nanotube (SWNT) connecting the first oxide layer separated by the blind hole and parallel to the substrate; and forming a source and a drain connecting to both ends of the SWNT, respectively.
摘要翻译：公开了一种碳纳米管晶体管的制造方法。所述步骤包括：在基板上形成绝缘层; 使用通过旋涂玻璃（SOG）的钴离子催化剂的溶液在绝缘层上形成第一氧化物层; 使用不含催化剂的溶液在所述第一氧化物层上形成第二氧化物层; 使用光刻和蚀刻工艺在第二氧化物层上形成盲孔，盲孔暴露第一氧化物层，第二氧化物层的侧壁和绝缘层; 形成连接由盲孔分离并平行于基板的第一氧化物层的单壁碳纳米管（SWNT）; 并且分别形成连接到SWNT的两端的源极和漏极。

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