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    • 6. 发明授权
    • Fabricating fully self-aligned amorphous silicon device
    • 制造完全自对准非晶硅器件
    • US5733804A
    • 1998-03-31
    • US577634
    • 1995-12-22
    • Michael G. HackRene A. Lujan
    • Michael G. HackRene A. Lujan
    • H01L21/336H01L21/77H01L21/84H01L29/786
    • H01L29/78696H01L27/1214H01L29/66765Y10S438/949
    • An amorphous silicon thin film transistor (a-Si TFT) or other a-Si device is produced by depositing and lithographically patterning a layer of doped semiconductor material such as microcrystalline or polycrystalline silicon to produce a conductive lead. The semiconductor material is deposited over an insulating region and over an exposed part of an amorphous silicon layer. The insulating region has an edge that is over and approximately aligned with an edge of a gate region. The doped semiconductor layer therefore forms a junction to the amorphous silicon layer at the edge of the insulating region, approximately aligned with the edge of the gate region. Self-aligned lithographic patterning is performed in such a way that the conductive lead overlaps the insulating region by a distance that is no more than a maximum overlap distance. The maximum overlap distance can, for example, be no more than 1.0 .mu.m, and can be 0.5 .mu.m. The insulating region and the doped semiconductor layer can both be lithographically patterned by a combination of self-aligned backside exposure and top masked exposure. Overlap distance can be controlled by timing backside exposure, application of developer, baking, or application of etchant.
    • 通过对诸如微晶或多晶硅的掺杂半导体材料的层进行沉积和光刻图案来制造非晶硅薄膜晶体管(a-Si TFT)或其它a-Si器件,以产生导电引线。 半导体材料沉积在非晶硅层的绝缘区域和暴露部分之上。 绝缘区域具有在栅极区域的边缘上方且大致对齐的边缘。 因此,掺杂半导体层在绝缘区域的边缘处形成大致与栅极区域的边缘对准的非晶硅层的结。 以这样的方式进行自对准平版印刷图案,使得导电引线与绝缘区域重叠不超过最大重叠距离的距离。 最大重叠距离例如可以不大于1.0μm,并且可以是0.5μm。 绝缘区域和掺杂半导体层可以通过自对准背面曝光和顶部掩模曝光的组合进行光刻图案化。 重叠距离可以通过定时背面曝光,显影剂的应用,烘烤或蚀刻剂的应用来控制。
    • 8. 发明授权
    • Silicon structures having an absorption layer
    • 具有吸收层的硅结构
    • US6140668A
    • 2000-10-31
    • US69055
    • 1998-04-28
    • Ping MeiRene A. Lujan
    • Ping MeiRene A. Lujan
    • H01L21/77H01L21/84H01L27/12H01L29/76H01L29/04
    • H01L27/1214
    • Amorphous and polycrystalline silicon (hybrid) devices are formed close to one another employing laser crystallization and back side lithography processes. A mask (e.g., TiW) is used to protect the amorphous silicon device during laser crystallization. A patterned nitride layer is used to protect the amorphous silicon device during rehydrogenation of the polycrystalline silicon. An absorption film (e.g., amorphous silicon) is used to compensate for the different transparencies of amorphous and polycrystalline silicon during the back side lithography. Device spacing of between 2 and 50 micrometers may be obtained, while using materials and process steps otherwise compatible with existing hybrid device formation processes.
    • 使用激光结晶和背面光刻工艺,非晶和多晶硅(混合)器件彼此靠近地形成。 在激光结晶期间,使用掩模(例如TiW)来保护非晶硅器件。 在多晶硅的再氢化期间,使用图案化的氮化物层来保护非晶硅器件。 吸收膜(例如,非晶硅)用于补偿背面光刻期间的非晶硅和多晶硅的不同透明度。 可以获得2至50微米之间的器件间隔,同时使用与现有的混合器件形成工艺相适应的材料和工艺步骤。