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    • 2. 发明授权
    • Accelerometer with integral bidirectional shock protection and
controllable viscous damping
    • 具有整体双向冲击保护和可控粘性阻尼的加速度计
    • US4882933A
    • 1989-11-28
    • US202081
    • 1988-06-03
    • Kurt E. PetersenPhillip W. Barth
    • Kurt E. PetersenPhillip W. Barth
    • G01P1/00G01P15/08G01P15/12
    • G01P15/12G01P1/003G01P15/0802G01P2015/0828
    • A micromachined accelerometer includes integral bidirectional shock protection and controllable viscous damping. The accelerometer includes a frame in which a seismic mass is disposed and coupled to the frame by one or more cantilever beams. Upper and lower stops are provided around the periphery of the seismic mass and around the interior of the frame to limit the travel distance of the seismic mass. The accelerometer is fabricated, preferably from monocrystalline silicon, by defining an annular recess which extends into a first surface of a silicon substrate. Next, a layer is formed over the surface of the substrate but not in contact with the lower surface of the recessed region. An annular-shaped region of the substrate extending from the bottom surface of the substrate to the layer is then removed to define the seismic mass and frame. Finally, portions of the layer are removed to define the cantilever beams and integral bidirectional stops.
    • 微机械加速度计包括整体双向冲击保护和可控粘性阻尼。 加速度计包括框架,其中地震质量块通过一个或多个悬臂梁布置并耦合到框架。 上部和下部挡块设置在震动周围的周围,并围绕框架的内部,以限制地震块的行进距离。 通过限定延伸到硅衬底的第一表面中的环形凹槽来制造加速度计,优选地由单晶硅制成。 接下来,在基板的表面上形成层,但不与凹陷​​区域的下表面接触。 然后,从衬底的底表面延伸到层的衬底的环形区域被去除以限定地震质量和框架。 最后,去除层的部分以限定悬臂梁和整体双向挡块。
    • 9. 发明授权
    • Optical ray deflection apparatus
    • 光线偏转装置
    • US4317611A
    • 1982-03-02
    • US150839
    • 1980-05-19
    • Kurt E. Petersen
    • Kurt E. Petersen
    • G02B26/08G02B26/10G03F7/20G09F9/37H04N1/113G02B27/17
    • G03F7/70291G02B26/08G02B26/10G09F9/372
    • Torsional type optical ray deflection apparatus essentially comprises a pair of etched plates, one of which is single crystal semiconductor material such as silicon, and the other is a suitable insulating material such as glass. The semiconductor plate is etched to form an elongated bar of the material having a wider central portion which forms a reflecting surface armature of suitable area suspended internally of the rectangular frame formed by the remainder of the semiconductor plate. The insulating plate is etched to leave an annuloidal depression centrally of the plate. An elongated land in the center of the insulating plate underlies the reflecting surface area and the torsion bars in order to support the torsion bar-reflector structure in the direction normal to the longitudinal axis while allowing rotation about that axis. Planar electrodes are laid down in the bottom of the depression in the insulating plate for exerting an electrostatic force between one of the electrodes and the semiconductor armature, thereby causing angular displacement about the longitudinal axis of the torsion bars which will deflect rays of light incident to the reflecting surface portion.
    • 扭转型光线偏转装置基本上包括一对蚀刻板,其中之一是单晶半导体材料如硅,另一种是合适的绝缘材料如玻璃。 蚀刻半导体板以形成具有较宽中心部分的材料的细长条,该中心部形成由半导体板的其余部分形成的矩形框架内部悬挂的合适区域的反射表面电枢。 蚀刻绝缘板以在板的中心留下环形凹陷。 在绝缘板的中心的细长的平台位于反射表面区域和扭杆之下,以便在垂直于纵向轴线的方向上支撑扭杆反射器结构,同时允许围绕该轴线旋转。 平面电极放置在绝缘板的凹陷的底部,用于在电极和半导体电枢之间施加静电力,从而引起围绕扭杆的纵向轴线的角位移,这将扭曲入射到 反射面部。