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    • 7. 发明授权
    • Nanoimprint resist
    • 纳米抗蚀剂
    • US07431858B2
    • 2008-10-07
    • US10511402
    • 2003-04-09
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigPeter W OliveiraHelmut Schmidt
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigPeter W OliveiraHelmut Schmidt
    • B44C1/22C03C15/00C03C25/68C23F1/00
    • G03F7/0757B82Y10/00B82Y40/00G03F7/0002G03F7/0017G03F7/0047
    • The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.
    • 本发明涉及一种用于微结构化电子部件的方法,其以良好的纵横比产生高分辨率(<= 200nm),同时显着地低于光刻方法。 本发明的方法包括以下步骤:i)制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii)制备由底涂层(b)和载体(c)组成的靶基材; iii)在步骤i)中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii)中获得的底涂层(b) iv)涂覆的溶胶膜材料硬化; v)分离转印压花印模,由此获得作为顶涂层(a)的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤:vi)纳米复合溶胶膜的剩余层被等离子体蚀刻,优选地具有CHF 3 O 2 / O 2等离子体 ; vii)底涂层被等离子体蚀刻,优选为O 2等离子体; viii)蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。
    • 8. 发明申请
    • Nanoimprint resist
    • 纳米抗蚀剂
    • US20050224452A1
    • 2005-10-13
    • US10511402
    • 2003-04-09
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigHelmut Schmidt
    • Walter SpiessFumio KitaMichael MeierAndreas GierMartin MennigHelmut Schmidt
    • G03F7/20B81C1/00G03F7/00G03F7/004G03F7/075H01L21/027H01L21/3065C23F1/00B05D5/00B44C1/22C03C15/00C03C25/68G03G15/00H01L21/311H01L29/06
    • G03F7/0757B82Y10/00B82Y40/00G03F7/0002G03F7/0017G03F7/0047
    • The invention relates to a method for microstructuring electronic components, which yields high resolutions (≦200 nm) at a good aspect ratio while being significantly less expensive than photolithographic methods. The inventive method comprises the following steps: i) a planar unhardened sol film of a nanocomposite composition according to claim 1 is produced; ii) a target substrate consisting of a bottom coat (b) and a support (c) is produced; iii) sol film material obtained in step i) is applied to the bottom coat (b) obtained in step ii) by means of a microstructured transfer embossing stamp; iv) the applied sol film material is hardened; v) the transfer embossing stamp is separated, whereby an embossed microstructure is obtained as a top coat (a). The method for producing a microstructured semiconductor material comprises the following additional steps: vi) the remaining layer of the nanocomposite sol film is plasma etched, preferably with CHF3/O2 plasma; vii) the bottom coat is plasma etched, preferably with O2 plasma; viii) the semiconductor material is etched or the semiconductor material is doped in the etched areas.
    • 本发明涉及一种用于微结构化电子部件的方法,其以良好的纵横比产生高分辨率(<= 200nm),同时显着地低于光刻方法。 本发明的方法包括以下步骤:i)制备根据权利要求1的纳米复合组合物的平面未硬化溶胶膜; ii)制备由底涂层(b)和载体(c)组成的靶基材; iii)在步骤i)中获得的溶胶膜材料通过微结构转印压花印刷施加到在步骤ii)中获得的底涂层(b) iv)涂覆的溶胶膜材料硬化; v)分离转印压花印模,由此获得作为顶涂层(a)的压花微结构。 制造微结构化半导体材料的方法包括以下附加步骤:vi)纳米复合溶胶膜的剩余层被等离子体蚀刻,优选地具有CHF 3 O 2 / O 2等离子体 ; vii)底涂层被等离子体蚀刻,优选为O 2等离子体; viii)蚀刻半导体材料或者在蚀刻区域中掺杂半导体材料。