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1. 发明授权

US06512689B1 MRAM without isolation devices 失效
标题翻译： MRAM无隔离设备
公开(公告)号：US06512689B1
公开(公告)日：2003-01-28
申请号：US10051646
申请日：2002-01-18
申请人： Peter K. Naji , Mark A. Durlam , Saied N. Tehrani
发明人： Peter K. Naji , Mark A. Durlam , Saied N. Tehrani
IPC分类号： G11C1100
CPC分类号： G11C7/14 , G11C11/15
摘要： A magnetoresistive random access memory architecture free of isolation devices includes a plurality of data columns of non-volatile magnetoresistive elements. A reference column includes non-volatile magnetoresistive elements positioned adjacent to the data column. Each column is connected to a current conveyor. A selected data current conveyor and the reference current conveyor are connected to inputs of a differential amplifier for differentially comparing a data voltage to a reference voltage. The current conveyors are connected directly to the ends of the data and reference bitlines. This specific arrangement allows the current conveyors to be clamped to the same voltage which reduces or removes sneak circuits to substantially reduce leakage currents.
摘要翻译：没有隔离装置的磁阻随机存取存储器架构包括多个非易失性磁阻元件的数据列。参考柱包括与数据列相邻定位的非易失性磁阻元件。每列连接到当前输送机。选择的数据流传输器和参考电流传输器连接到差分放大器的输入端，用于将数据电压与参考电压进行差分比较。目前的输送机直接连接到数据和参考位线的末端。这种特定的布置允许当前输送机被夹紧到相同的电压，这减少或去除潜行电路以显着减少泄漏电流。

2. 发明授权

US5831920A GMR device having a sense amplifier protected by a circuit for dissipating electric charges 失效
标题翻译： GMR器件具有由用于耗散电荷的电路保护的读出放大器
公开(公告)号：US5831920A
公开(公告)日：1998-11-03
申请号：US949605
申请日：1997-10-14
申请人： Eugene Chen , Saied N. Tehrani , Mark Durlam , Peter K. Naji
发明人： Eugene Chen , Saied N. Tehrani , Mark Durlam , Peter K. Naji
IPC分类号： G11C11/16 , G11C7/00
CPC分类号： G11C11/16
摘要： A new and improved magnetic device is provided for memories and sensors. A magnetic random access memory (MRAM) device (20) includes a storage element (21) for magnetically storing states and an amplifier (25) for sensing the states stored in the storage element. A circuit (27) for dissipating electrical charges are coupled to inputs (23,24) of the amplifier (25) to discharge electrical charges applied to the inputs (23,24) of the amplifier (25). The charge dissipating circuit (27) includes junctions (271-274) which are typically connected in series between power (255) and common (257) lines. Electric charges applied to the inputs (23,24) of the amplifier (25) is discharged through the junctions (271-274).
摘要翻译：为存储器和传感器提供了一种新的改进的磁性器件。磁性随机存取存储器（MRAM）装置（20）包括用于磁存储状态的存储元件（21）和用于感测存储在存储元件中的状态的放大器（25）。用于耗散电荷的电路（27）耦合到放大器（25）的输入（23,24），以放电施加到放大器（25）的输入端（23,24）的电荷。电荷消耗电路（27）包括通常在功率（255）和公共（257）线之间串联连接的结（271-274）。施加到放大器（25）的输入端（23,24）的电荷通过接点（271-274）放电。

3. 发明授权

US06812040B2 Method of fabricating a self-aligned via contact for a magnetic memory element 失效
标题翻译：制造用于磁存储元件的自对准通孔接点的方法
公开(公告)号：US06812040B2
公开(公告)日：2004-11-02
申请号：US10095816
申请日：2002-03-12
申请人： Kelly Kyler , Saied N. Tehrani , John J. D'urso , Gregory W. Grynkewich , Mark A. Durlam , Brian Butcher
发明人： Kelly Kyler , Saied N. Tehrani , John J. D'urso , Gregory W. Grynkewich , Mark A. Durlam , Brian Butcher
IPC分类号： H01L2100
CPC分类号： H01L43/12 , B82Y10/00
摘要： A method of fabricating a magnetoresistive random access memory device comprising the steps of providing a substrate, forming a conductive layer positioned on the substrate, forming a magnetoresistive random access memory device positioned on conductive layer, forming a metal cap on the magnetoresistive random access memory device, and electroless plating a bump metal layer on the metal cap. The bump metal layer acts as a self-aligned via for a bit line subsequently formed thereon.
摘要翻译：一种制造磁阻随机存取存储器件的方法，包括以下步骤：提供衬底，形成位于衬底上的导电层，形成位于导电层上的磁阻随机存取存储器件，在磁阻随机存取存储器件上形成金属帽并且在金属盖上化学镀覆凸块金属层。凸块金属层用作随后在其上形成的位线的自对准通孔。

4. 发明授权

US06912107B2 Magnetic element with insulating veils and fabricating method thereof 失效
标题翻译：具有绝缘面纱的磁性元件及其制造方法
公开(公告)号：US06912107B2
公开(公告)日：2005-06-28
申请号：US10830264
申请日：2004-04-21
申请人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
发明人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
IPC分类号： G11B5/39 , H01F10/32 , H01F41/30 , H01L21/8246 , H01L27/105 , H01L43/08 , G11B5/127
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/324 , H01F41/302 , H01L43/12 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052 , Y10T428/24917
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the second electrode (18) include ferromagnetic layers (26 & 28). A spacer layer (16) is located between the ferromagnetic layer (26) of the first electrode (14) and the ferromagnetic layer (28) of the second electrode (16) for permitting tunneling current in a direction generally perpendicular to the ferromagnetic layers (26 & 28). The device includes insulative veils (34) characterized as electrically isolating the first electrode (14) and the second electrode (18), the insulative veils (34) including non-magnetic and insulating dielectric properties. Additionally disclosed is a method of fabricating the magnetic element (10) with insulative veils (34) that have been transformed from having conductive properties to insulative properties through oxygen plasma ashing techniques.
摘要翻译：一种用于磁性元件的改进和新颖的器件和制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。第一电极（14）和第二电极（18）包括铁磁层（26和28）。间隔层（16）位于第一电极（14）的铁磁层（26）和第二电极（16）的铁磁层（28）之间，用于允许隧道电流沿大致垂直于铁磁层的方向 26和28）。该装置包括绝缘面纱（34），其特征在于电隔离第一电极（14）和第二电极（18），绝缘面纱（34）包括非磁性和绝缘的介电性质。另外公开了一种通过氧等离子体灰化技术制造具有绝缘面纱（34）的磁性元件（10）的方法，其已经从具有导电性能转变为绝缘性能。

5. 发明授权

US06835423B2 Method of fabricating a magnetic element with insulating veils 有权
标题翻译：制造具有绝缘面纱的磁性元件的方法
公开(公告)号：US06835423B2
公开(公告)日：2004-12-28
申请号：US10349702
申请日：2003-01-22
申请人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
发明人： Eugene Youjun Chen , Mark Durlam , Saied N. Tehrani , Mark DeHerrera , Gloria Kerszykowski , Kelly Wayne Kyler
IPC分类号： H05H100
CPC分类号： B82Y25/00 , B82Y40/00 , H01F10/324 , H01F41/302 , H01L43/12 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052 , Y10T428/24917
摘要： An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the second electrode (18) include ferromagnetic layers (26 & 28). A spacer layer (16) is located between the ferromagnetic layer (26) of the first electrode (14) and the ferromagnetic layer (28) of the second electrode (16) for permitting tunneling current in a direction generally perpendicular to the ferromagnetic layers (26 & 28). The device includes insulative veils (34) characterized as electrically isolating the first electrode (14) and the second electrode (18), the insulative veils (34) including non-magnetic and insulating dielectric properties. Additionally disclosed is a method of fabricating the magnetic element (10) with insulative veils (34) that have been transformed from having conductive properties to insulative properties through oxygen plasma ashing techniques.
摘要翻译：一种用于磁性元件的改进和新颖的器件和制造方法，更具体地，包括第一电极（14），第二电极（18）和间隔层（16）的磁性元件（10）。第一电极（14）和第二电极（18）包括铁磁层（26和28）。间隔层（16）位于第一电极（14）的铁磁层（26）和第二电极（16）的铁磁层（28）之间，用于允许隧道电流沿大致垂直于铁磁层的方向 26和28）。该装置包括绝缘面纱（34），其特征在于电隔离第一电极（14）和第二电极（18），绝缘面纱（34）包括非磁性和绝缘的介电性质。另外公开了一种通过氧等离子体灰化技术制造具有绝缘面纱（34）的磁性元件（10）的方法，其已经从具有导电性能转变为绝缘性能。

6. 发明授权

US5959880A Low aspect ratio magnetoresistive tunneling junction 失效
标题翻译：低纵横比磁阻隧道结
公开(公告)号：US5959880A
公开(公告)日：1999-09-28
申请号：US993996
申请日：1997-12-18
申请人： Jing Shi , Theodore Zhu , Saied N. Tehrani , Eugene Chen , Mark Durlam
发明人： Jing Shi , Theodore Zhu , Saied N. Tehrani , Eugene Chen , Mark Durlam
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , G11C11/00
CPC分类号： G11C11/5607 , G11C11/15 , G11C11/16 , G11C2211/5615
摘要： A low aspect ratio magnetoresistive tunneling junction memory cell includes two layers of magnetoresistive material separated by electrically insulating material so as to form a magnetoresistive tunneling junction. An exchange interaction layer is sandwiched between one layer of the junction and a third layer of magnetoresistive material so as to pin the magnetic vector of one layer of the junction anti-parallel to a magnetic vector in the third layer so that magnetostatic interaction between the junction layers is canceled and the magnetic vector of the one layer is free to move in either of the two directions parallel to the polarization axis. Antiferromagnetic material is positioned adjacent the third layer so as to fix the magnetic vector in the third layer uni-directionally parallel to the polarization axis.
摘要翻译：低纵横比磁阻隧穿结存储单元包括由电绝缘材料分开的两层磁阻材料，以形成磁阻隧道结。交换相互作用层夹在一层结和第三层磁阻材料之间，以便将一层结的磁矢量与第三层中的磁矢量平行地平行，从而使连接点之间的静磁相互作用层被取消，并且一层的磁矢量在平行于偏振轴的两个方向中的任一方向上自由移动。反铁磁材料位于第三层附近，以将磁矢量固定在与偏振轴方向平行的第三层中。

7. 发明授权

US5902690A Stray magnetic shielding for a non-volatile MRAM 失效
标题翻译：杂散磁屏蔽用于非挥发性MRAM
公开(公告)号：US5902690A
公开(公告)日：1999-05-11
申请号：US806275
申请日：1997-02-25
申请人： Clarence J. Tracy , Eugene Chen , Mark Durlam , Theodore Zhu , Saied N. Tehrani
发明人： Clarence J. Tracy , Eugene Chen , Mark Durlam , Theodore Zhu , Saied N. Tehrani
IPC分类号： G11C11/15 , H01L27/22 , B32B9/00
CPC分类号： H01L27/228 , G11C11/15 , Y10S977/838 , Y10T428/1164
摘要： A non-volatile magneto-resistive memory positioned on a semiconductor substrate is shielded from stray magnetic fields by a passivation layer partially or completely surrounding the non-volatile magneto-resistive memory. The passivation layer includes non-conductive ferrite materials, such as Mn--Zn-Ferrite, Ni--Zn-Ferrite, MnFeO, CuFeO, FeO, or NiFeO, for shielding the non-volatile magneto-resistive memory from stray magnetic fields. The non-conductive ferrite materials may also be in the form of a layer which focuses internally generated magnetic fields on the non-volatile magneto-resistive memory to reduce power requirements.
摘要翻译：定位在半导体衬底上的非易失性磁阻存储器通过部分或完全围绕非易失性磁阻存储器的钝化层与杂散磁场屏蔽。钝化层包括非导电铁氧体材料，例如Mn-Zn-铁素体，Ni-Zn-铁素体，MnFeO，CuFeO，FeO或NiFeO，用于屏蔽非易失性磁阻存储器与杂散磁场。非导电铁氧体材料也可以是将内部产生的磁场聚焦在非易失性磁阻存储器上以降低功率需求的层的形式。

8. 发明授权

US5804458A Method of fabricating spaced apart submicron magnetic memory cells 失效
标题翻译：制造间隔亚微米磁记忆体的方法
公开(公告)号：US5804458A
公开(公告)日：1998-09-08
申请号：US766076
申请日：1996-12-16
申请人： Saied N. Tehrani , Mark Durlam , Herbert Goronkin
发明人： Saied N. Tehrani , Mark Durlam , Herbert Goronkin
IPC分类号： H01L27/115 , H01L21/70
CPC分类号： H01L27/115 , H01L27/222 , H01L43/12
摘要： A method of fabricating a plurality of spaced apart submicron memory cells is disclosed, including the steps of depositing a magnetoresistive system on a substrate formation, depositing and patterning a first layer of material to form sidewalls, and depositing a second, selectively etchable, layer of material on the first layer of material, etching the second layer of material to define spacers on the sidewalls of the first layer of material, etching the magnetoresistive system, using the spacers as a mask, to define a plurality of spaced apart submicron magnetic memory cells, and depositing electrical contacts on the plurality of spaced apart submicron magnetic memory cells.
摘要翻译：公开了一种制造多个间隔开的亚微米存储器单元的方法，包括以下步骤：在衬底形成上沉积磁阻系统，沉积和图形化第一材料层以形成侧壁，以及沉积第二层可选择的可蚀刻的材料在第一层材料上蚀刻第二层材料以在第一材料层的侧壁上限定间隔物，使用间隔物作为掩模蚀刻磁阻系统以限定多个间隔开的亚微米磁存储器单元并且在多个间隔开的亚微米磁存储器单元上沉积电触点。

9. 发明授权

US5748524A MRAM with pinned ends 失效
标题翻译： MRAM带固定端
公开(公告)号：US5748524A
公开(公告)日：1998-05-05
申请号：US701355
申请日：1996-09-23
申请人： Eugene Chen , Saied N. Tehrani , Ronald N. Legge , Xiaodong T. Zhu
发明人： Eugene Chen , Saied N. Tehrani , Ronald N. Legge , Xiaodong T. Zhu
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56
CPC分类号： G11C11/5607 , G11C11/15 , G11C11/16 , G11C2211/5616
摘要： A multi-layer magnetic memory cell is provided, with magnetic end vectors adjacent the ends of the cell pinned in a fixed direction. To pin the magnetic end vectors, a magnetic field is applied to an end of at least one of the layers of magnetic material in the cell to move the magnetic end vectors in the magnetic material at the end of the cell into a fixed direction. Pinning material is then disposed adjacent to the end to maintain the magnetic end vectors in the magnetic material at the end of the cell in the fixed direction.
摘要翻译：提供了一个多层磁存储单元，其磁端向量靠近固定在固定方向上的单元端。为了固定磁端向量，在单元中至少一层磁性材料的一端施加磁场，使磁性材料端端的磁端矢量移动到固定方向。然后将钉扎材料设置成与端部相邻，以将磁端向量保持在固定方向上的电池端部的磁性材料中。

10. 发明授权

US5703805A Method for detecting information stored in a MRAM cell having two magnetic layers in different thicknesses 失效
标题翻译：用于检测存储在具有不同厚度的两个磁性层的MRAM单元中的信息的方法
公开(公告)号：US5703805A
公开(公告)日：1997-12-30
申请号：US646897
申请日：1996-05-08
申请人： Saied N. Tehrani , Eugene Chen , Mark Durlam , Xiaodong T. Zhu
发明人： Saied N. Tehrani , Eugene Chen , Mark Durlam , Xiaodong T. Zhu
IPC分类号： G11C11/15 , G11C11/56 , H01L21/8246 , H01L27/105 , H01L43/08
CPC分类号： G11C11/5607 , G11C2211/5616
摘要： A method for detecting and storing four states contained in a MRAM cell having two layers (11,13) which have different thicknesses is provided. A first magnetic field is applied to the MRAM cell, which causes a magnetoresistive change in the MRAM cell. A first and second states are detected based on the magnetoresistive change. A second magnetic field is further applied to the MRAM cell. A third and fourth states are detected based on the magnetoresistive change due to the second magnetic field.
摘要翻译：提供了一种用于检测和存储包含在具有不同厚度的两层（11,13）的MRAM单元中的四种状态的方法。第一磁场被施加到MRAM单元，这导致MRAM单元中的磁阻变化。基于磁阻变化来检测第一和第二状态。第二磁场进一步应用于MRAM单元。基于由第二磁场引起的磁阻变化来检测第三和第四状态。

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