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    • 2. 发明授权
    • Photo-cracker cell
    • 光裂解池
    • US5298759A
    • 1994-03-29
    • US19965
    • 1993-02-19
    • Peter D. BrewerJohn A. Roth
    • Peter D. BrewerJohn A. Roth
    • B01J19/12C23C14/22C23C16/452C23C16/48C30B23/06G21K5/00
    • C23C16/482B01J19/121B01J19/123C23C14/22C23C16/452C30B23/066
    • Ultraviolet (UV) light from a lamp (12) or laser (38) is provided for cracking Group V and Group VI species comprising clusters (dimers and tetramers) or metal-organic molecules to form monomers (atoms). The UV radiation interacts with a molecular beam (14) of Group V and Group VI species following their generation in a source cell (16), which may be an effusion source in molecular beam epitaxy (MBE) apparatus, a thermal cracker cell in gas-source MBE apparatus, or a gas injector cell in metal-organic MBE apparatus (MOMBE). As configured, the UV light source and associated elements comprise a unit, termed herein a "photo-cracker cell" (10). The photo-cracker cell includes an elliptical reflective cavity (18), which defines two foci. The source of UV light is located along one focus and the path of the molecular beam is located along the other focus substantially parallel thereto. The photo-cracker cell may be provided on existing MBE or MOMBE apparatus, between the present source cell and the growth chamber (36) in which III-V, IV, and II-VI semiconductor layers on substrates are deposited.
    • 提供来自灯(12)或激光(38)的紫外线(UV)光,用于裂解含有簇(二聚体和四聚体)或金属 - 有机分子的V族和VI族物质以形成单体(原子)。 在源细胞(16)中,UV辐射与V族和VI族物质的分子束(14)相互作用,其可以是分子束外延(MBE)装置中的渗出源,气体中的热裂解池 源MBE设备或金属有机MBE设备(MOMBE)中的气体注入单元。 如所配置的,UV光源和相关元件包括本文称为“光裂解电池”(10)的单元。 光裂解单元包括限定两个焦点的椭圆反射腔(18)。 UV光源沿着一个焦点定位,并且分子束的路径沿着基本上与其平行的另一焦点定位。 可以在现有的源电池和沉积有基板上的III-V,IV和II-VI半导体层的生长室(36)之间的现有MBE或MOMBE装置上提供光裂化器单元。
    • 4. 发明授权
    • Process for forming improved superconductor/semiconductor junction
structures
    • 用于形成改进的超导体/半导体结结构的方法
    • US4395813A
    • 1983-08-02
    • US199163
    • 1980-10-22
    • John A. RothLynette B. Roth
    • John A. RothLynette B. Roth
    • H01L39/22H01L39/16H01L39/24
    • H01L39/223H01L39/22Y10S505/922Y10S505/923Y10T29/49014
    • The specification discloses a process for forming a superconductor/semiconductor junction structure having optimized low-temperature current transport properties by first providing a substrate of a chosen semiconductor material having an atomically clean surface. A layer of a first chosen superconducting material is deposited on or above the surface of the substrate to a predetermined thickness. Either before or after the formation of this layer of the first superconducting material, a region of a second chosen superconducting material is formed between the surface of the substrate and the layer of the first superconducting material to serve as an interfacial reaction barrier to prevent the reaction between the surface of the substrate and the first chosen superconducting material at the interface thereof which would otherwise result in the formation of an undesired non-superconducting material at the interface. By preventing this undesired interfacial reaction, an optimized low-temperature current transport path is maintained across the interface and certain device performance characteristics can be optimized. Josephson junction superconducting devices and super-Schottky devices may be formed by this disclosed process.
    • 该说明书公开了一种通过首先提供具有原子清洁表面的所选择的半导体材料的衬底来形成具有优化的低温电流传输特性的超导体/半导体结结构的方法。 将第一选择的超导材料的层沉积在基板的表面上或上方至预定厚度。 在第一超导材料的该层形成之前或之后,在基板的表面和第一超导材料层之间形成第二选择的超导材料的区域,以用作界面反应势垒以防止反应 在衬底的表面和其界面处的第一选择的超导材料之间,否则这将导致在界面处形成不需要的非超导材料。 通过防止这种不希望的界面反应,跨接口保持优化的低温电流传输路径,并且可以优化某些器件性能特性。 约瑟夫逊结超导器件和超肖特基器件可以通过该公开的工艺形成。
    • 5. 发明授权
    • Solid waste compactor with multiple receptacles
    • 具有多个容器的固体废物压实机
    • US5119722A
    • 1992-06-09
    • US619528
    • 1990-11-29
    • Neil A. CarterJohn A. Roth
    • Neil A. CarterJohn A. Roth
    • B30B9/30
    • B30B9/3075B30B9/3064
    • A solid waste compactor having multiple waste receptacles for separately receiving, temporarily holding, and compacting separate classes of solid waste, for example paper, glass, aluminum cans and steel cans. In one preferred embodiment there is a single screw-driven compaction ram which compacts solid waste in the several receptacles, which are rotatable into position beneath the ram on a revolving table. In an alternative embodiment there are multiple compaction rams for the multiple receptacles, with all the compaction rams being driven in series by means of a common drive chain, and with the receptacles being mounted on a slidable carriage for removal from the compactor.
    • 具有多个废物容器的固体废物压实机,用于分别接收,暂时保持和压实单独类别的固体废物,例如纸,玻璃,铝罐和钢罐。 在一个优选实施例中,存在单个螺杆驱动的压实冲压器,其压缩多个容器中的固体废物,其可旋转到旋转台下的冲头下方的位置。 在替代实施例中,存在用于多个容器的多个压实接头,其中所有压实公ams都通过公共驱动链串联驱动,并且所述容器被安装在可滑动的滑架上以从压实机移除。
    • 6. 发明授权
    • Improved superconductor/semiconductor junction structures
    • 改进的超导体/半导体结结构
    • US4495510A
    • 1985-01-22
    • US444939
    • 1982-11-29
    • John A. RothLynette B. Roth
    • John A. RothLynette B. Roth
    • H01L39/22H01L27/12
    • H01L39/22H01L39/223Y10S505/874
    • The specification discloses a process for forming a superconductor/semiconductor junction structure having optimized low-temperature current transport properties by first providing a substrate of a chosen semiconductor material having an atomically clean surface. A layer of a first chosen superconducting material is deposited on or above the surface of the substrate to a predetermined thickness. Either before or after the formation of this layer of the first superconducting material, a region of a second chosen superconducting material is formed between the surface of the substrate and the layer of the first superconducting material to serve as an interfacial reaction barrier to prevent the reaction between the surface of the substrate and the first chosen superconducting material at the interface thereof which would otherwise result in the formation of an undesired non-superconducting material at the interface. By preventing this undesired interfacial reaction, an optimized low-temperature current transport path is maintained across the interface and certain device performance characteristics can be optimized. Josephson junction superconducting devices and super-Schottky devices may be formed by this disclosed process.
    • 该说明书公开了一种通过首先提供具有原子清洁表面的所选择的半导体材料的衬底来形成具有优化的低温电流传输特性的超导体/半导体结结构的方法。 将第一选择的超导材料的层沉积在基板的表面上或上方至预定厚度。 在第一超导材料的该层形成之前或之后,在基板的表面和第一超导材料层之间形成第二选择的超导材料的区域,以用作界面反应势垒以防止反应 在衬底的表面和其界面处的第一选择的超导材料之间,否则这将导致在界面处形成不需要的非超导材料。 通过防止这种不希望的界面反应,跨接口保持优化的低温电流传输路径,并且可以优化某些器件性能特性。 约瑟夫逊结超导器件和超肖特基器件可以通过该公开的工艺形成。