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    • 4. 发明授权
    • Performance-temperature optimization by cooperatively varying the
voltage and frequency of a circuit
    • 通过协调改变电路的电压和频率进行性能温度优化
    • US5940785A
    • 1999-08-17
    • US639586
    • 1996-04-29
    • Christos John GeorgiouEdward Scott KirkpatrickThor Arne Larsen
    • Christos John GeorgiouEdward Scott KirkpatrickThor Arne Larsen
    • G05D23/24G06F1/20G06F1/32G05D23/00
    • G06F1/324G05D23/1913G05D23/24G06F1/206G06F1/3203G06F1/3296Y02B60/1217Y02B60/1275Y02B60/1285
    • A system and method using thermal feedback to cooperatively vary a voltage and frequency of a circuit to control heating while maintaining synchronization. Preferably, on-chip thermal sensors are used for feedback. A system having features of the invention includes: a thermal sensor coupled to the circuit, the thermal sensor generating a temperature signal which is a function of a temperature associated with the functional unit; a temperature decoder having an input and an output, the input coupled to the thermal sensor for decoding the temperature signal; a comparator having one input coupled to the decoder for comparing a decoded temperature signal with a predetermined temperature threshold signal coupled to a second input, the comparator enabling a voltage/clock control signal as a function of the decoded temperature signal and the predetermined temperature threshold; an adjustable voltage regulator coupled to the voltage/clock control signal; and a clock selector coupled to the voltage/clock control signal; wherein the voltage regulator and the clock selector are adapted to cooperatively vary the voltage and the frequency of the circuit to a predetermined voltage-frequency pair, responsive to the voltage/clock control signal and switching factor means, coupled to the comparator, for varying the switching factor of the circuit, wherein the switching factor is the fraction of clock cycles that the circuit is dissipating power.
    • 使用热反馈的系统和方法协调地改变电路的电压和频率以控制加热同时保持同步。 优选地,片上热传感器用于反馈。 具有本发明特征的系统包括:耦合到电路的热传感器,热传感器产生温度信号,温度信号是与功能单元相关联的温度的函数; 具有输入和输出的温度解码器,所述输入耦合到所述热传感器,用于解码所述温度信号; 比较器,其具有耦合到解码器的一个输入端,用于将解码的温度信号与耦合到第二输入端的预定温度阈值信号进行比较,所述比较器使电压/时钟控制信号作为解码温度信号和预定温度阈值的函数; 耦合到电压/时钟控制信号的可调电压调节器; 以及时钟选择器,耦合到所述电压/时钟控制信号; 其中所述电压调节器和所述时钟选择器适于根据耦合到所述比较器的电压/时钟控制信号和开关因子装置协调地将电路的电压和频率改变为预定的电压 - 频率对,以改变 电路的开关因数,其中开关因数是电路耗散功率的时钟周期的一部分。
    • 6. 发明申请
    • VLSI HOT-SPOT MINIMIZATION USING NANOTUBES
    • 使用NANOTUBES的VLSI HOT-SPOT最小化
    • US20100328899A1
    • 2010-12-30
    • US12873899
    • 2010-09-01
    • CHRISTOS DIMITRIOS DIMITRAKOPOULOSChristos John Georgiou
    • CHRISTOS DIMITRIOS DIMITRAKOPOULOSChristos John Georgiou
    • H05K7/20F28F7/00
    • F28F21/02F28D2015/0225F28D2021/0029F28F2255/00F28F2260/02H01L23/373H01L2924/0002H01L2924/00
    • The invention relates to a semiconductive device comprising a die with at least one defined hot-spot area lying in a plane on the die and a cooling structure comprising nanotubes such as carbon nanotubes extending in a plane different than the plane of the hot-spot area and outwardly from the plane of the hot-spot area. The nanotubes are operatively associated with the hot-spot area to decrease any temperature gradient between the hot-spot area and at least one other area on the die defined by a temperature lower than the hot-spot area. A matrix material comprising a second heat conducting material substantially surrounds the nanotubes and is operatively associated with and in heat conducting relation with the other area on the die defined by a temperature lower than the hot-spot area. The heat conductivity of the nanotubes is greater than the heat conductivity of the matrix material, with the distal ends of the nanotubes exposed to present a distal surface comprising the first heat conducting means for direct contact with a medium comprising a cooling fluid. The inventors also disclose processes for manufacturing and using the device and products produced by the processes.
    • 本发明涉及一种半导体器件,其包括具有位于管芯上的平面中的至少一个限定热点区域的管芯和包括在不同于热点区域的平面的平面内延伸的碳纳米管的纳米管的冷却结构 并从热点区域的平面向外。 纳米管与热点区域可操作地相关联,以降低由热点区域和模具上的至少一个其它区域之间的温度梯度,该温度梯度由低于热点区域的温度限定。 包括第二导热材料的基质材料基本上围绕纳米管,并且与由热点区域的温度限定的模具上的另一个区域可操作地相关联并与其导热。 纳米管的导热性大于基体材料的导热性,其中纳米管的远端暴露于远侧表面,该远端表面包括用于与包含冷却流体的介质直接接触的第一导热装置。 本发明人还公开了用于制造和使用由该方法生产的装置和产品的方法。
    • 8. 发明申请
    • VLSI HOT-SPOT MINIMIZATION USING NANOTUBES
    • 使用NANOTUBES的VLSI HOT-SPOT最小化
    • US20080316711A1
    • 2008-12-25
    • US12169458
    • 2008-07-08
    • Christos Dimitrios DimitrakopoulosChristos John Georgiou
    • Christos Dimitrios DimitrakopoulosChristos John Georgiou
    • H05K7/20H01L21/50
    • F28F21/02F28D2015/0225F28D2021/0029F28F2255/00F28F2260/02H01L23/373H01L2924/0002H01L2924/00
    • The invention relates to a semiconductive device comprising a die with at least one defined hot-spot area lying in a plane on the die and a cooling structure comprising nanotubes such as carbon nanotubes extending in a plane different than the plane of the hot-spot area and outwardly from the plane of the hot-spot area. The nanotubes are operatively associated with the hot-spot area to decrease any temperature gradient between the hot-spot area and at least one other area on the die defined by a temperature lower than the hot-spot area. A matrix material comprising a second heat conducting material substantially surrounds the nanotubes and is operatively associated with and in heat conducting relation with the other area on the die defined by a temperature lower than the hot-spot area. The heat conductivity of the nanotubes is greater than the heat conductivity of the matrix material, with the distal ends of the nanotubes exposed to present a distal surface comprising the first heat conducting means for direct contact with a medium comprising a cooling fluid. The inventors also disclose processes for manufacturing and using the device and products produced by the processes.
    • 本发明涉及一种半导体器件,其包括具有位于管芯上的平面中的至少一个限定热点区域的管芯和包括在不同于热点区域的平面的平面内延伸的碳纳米管的纳米管的冷却结构 并从热点区域的平面向外。 纳米管与热点区域可操作地相关联,以降低由热点区域和模具上的至少一个其它区域之间的温度梯度,该温度梯度由低于热点区域的温度限定。 包括第二导热材料的基质材料基本上围绕纳米管,并且与由热点区域的温度限定的模具上的另一个区域可操作地相关联并与其导热。 纳米管的导热性大于基体材料的导热性,其中纳米管的远端暴露于远侧表面,该远端表面包括用于与包含冷却流体的介质直接接触的第一导热装置。 本发明人还公开了用于制造和使用由该方法生产的装置和产品的方法。