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1. 发明授权

US06297169B1 Method for forming a semiconductor device using a mask having a self-assembled monolayer 失效
标题翻译：使用具有自组装单层的掩模形成半导体器件的方法
公开(公告)号：US06297169B1
公开(公告)日：2001-10-02
申请号：US09122710
申请日：1998-07-27
申请人： Pawitter J. S. Mangat , C. Joseph Mogab , Kevin D. Cummings , Allison M. Fisher
发明人： Pawitter J. S. Mangat , C. Joseph Mogab , Kevin D. Cummings , Allison M. Fisher
IPC分类号： H01L21312
CPC分类号： G03F1/20 , B82Y10/00 , B82Y30/00 , G03F1/22 , G03F1/48 , Y10S438/942 , Y10S438/945
摘要： A passivating layer (220) is formed overlying portions of a mask (200). The mask (200) is used to pattern a semiconductor device substrate (62). In accordance with one embodiment of the present invention, the passivating layer (220) is removed prior to patterning the semiconductor device substrate (62). In yet another embodiment, the passivating layer (220) is cleaned prior to patterning the semiconductor device substrate (62) and then left to remain overlying portions of the mask (200) during the patterning process.
摘要翻译：形成覆盖掩模（200）的部分的钝化层（220）。掩模（200）用于对半导体器件基板（62）进行图案化。根据本发明的一个实施例，在图案化半导体器件衬底（62）之前去除钝化层（220）。在另一个实施例中，在图案化半导体器件衬底（62）之前清洁钝化层（220），然后在图案化工艺期间保持覆盖掩模（200）的部分。

2. 发明授权

US5283746A Manufacturing adjustment during article fabrication 失效
标题翻译：制品制造过程中的制造调整
公开(公告)号：US5283746A
公开(公告)日：1994-02-01
申请号：US23158
申请日：1993-02-25
申请人： Kevin D. Cummings , Robert C. Frye , Edward A. Rietman
发明人： Kevin D. Cummings , Robert C. Frye , Edward A. Rietman
IPC分类号： G06F15/18 , G06N3/063 , G06N99/00 , H01J37/302 , H01L21/027
CPC分类号： H01J37/3026 , G06N3/063 , G06N3/0635 , H01J2237/30455 , H01J2237/31769 , Y10S706/904
摘要： The use of neural networks has been employed to adjust processing during the fabrication of articles. For example, in the production of photolithographic masks by electron beam irradiation of a mask blank in a desired pattern, electrons scattered from the mask substrate cause distortion of the pattern. Adjustment for such scattering is possible during the manufacturing process by employing an adjustment function determined by a neural network whose parameters are established relative to a prototypical mask pattern.
摘要翻译：已经使用神经网络来在制品制造过程中调整处理。例如，在通过掩模坯料的电子束照射以期望的图案制造光刻掩模时，从掩模基板散射的电子引起图案的变形。通过采用由相对于原型掩模图案建立参数的神经网络确定的调整函数，在制造过程中可以进行这种散射的调整。

3. 发明授权

US5663018A Pattern writing method during X-ray mask fabrication 失效
标题翻译： X射线掩模制造过程中的图案写入方法
公开(公告)号：US5663018A
公开(公告)日：1997-09-02
申请号：US654457
申请日：1996-05-28
申请人： Kevin D. Cummings , William A. Johnson , Daniel L. Laird
发明人： Kevin D. Cummings , William A. Johnson , Daniel L. Laird
IPC分类号： G03F1/22 , G03F7/20 , H01L21/027 , G03F9/00
CPC分类号： G03F1/22 , G03F7/70425 , G03F7/70783 , G03F7/70866
摘要： A pattern writing method for X-ray mask fabrication including forming a uniform membrane layer on an X-ray absorbing layer and forming an etch mask on the layer of X-ray absorbing material including the steps of providing a layer of material sensitive to radiation. The layer of material has internal stresses which are altered by exposure to the radiation. The material is exposed in associated areas (e.g. a spiral) such that the internal stresses within the layer of material and altered internal stresses in the associated areas are substantially offset to reduce distortion in the X-ray mask.
摘要翻译：一种用于X射线掩模制造的图案写入方法，包括在X射线吸收层上形成均匀的膜层并在X射线吸收材料层上形成蚀刻掩模，包括以下步骤：提供对辐射敏感的材料层。材料层具有通过暴露于辐射而改变的内部应力。该材料在相关联的区域（例如螺旋形）中暴露，使得材料层内的内部应力和相关区域中的改变的内部应力基本上被抵消以减少X射线掩模中的畸变。

4. 发明授权

US6007948A Method of fabricating X-ray masks with reduced errors 失效
标题翻译：制造具有减少误差的X射线掩模的方法
公开(公告)号：US6007948A
公开(公告)日：1999-12-28
申请号：US654456
申请日：1996-05-28
申请人： Kevin D. Cummings
发明人： Kevin D. Cummings
IPC分类号： G03F1/22 , H01L21/027 , G03F9/00
CPC分类号： G03F1/22
摘要： A method of fabricating an X-ray mask including forming a membrane layer on a wafer and forming a layer of X-ray absorbing material on the membrane layer. A pattern is defined on the absorbing layer with positions that are predistorted in accordance with the following equations, and their extensions if desired:.DELTA.Y=M.sub.y Y+.delta.Y.DELTA.X=M.sub.x X+.delta.Xwhere:M.sub.y and M.sub.x are the X and Y magnification errors;.delta.Y includes the terms .alpha.X.sup.4 +.beta.X.sup.2 +.gamma. where,.alpha. includes the terms a.sub.1 Y.sup.3 +a.sub.2 Y.beta. includes the terms a.sub.3 Y.sup.3 +a.sub.4 Y.gamma. includes the terms a.sub.5 Y.sup.3 +a.sub.6 Y;and with corresponding equations for .delta.X. The pattern is then formed in the absorbing layer to form an X-ray mask.
摘要翻译：一种制造X射线掩模的方法，包括在晶片上形成膜层并在膜层上形成X射线吸收材料层。在吸收层上定义图案，其位置根据以下等式预失真，如果需要，则其扩展：DELTA Y = MyY + delta Y DELTA X = MxX + delta X其中：My和Mx是X和Y放大误差 ; ΔY包括术语αX 4 +βX 2 +γ，其中，α包括术语a1Y3 +a2Yβ包括术语a3Y3 + a4Yγ包括术语a5Y3 + a6Y; 并使用ΔX的相应方程式。然后在吸收层中形成图案以形成X射线掩模。

5. 发明授权

US5590239A Planar uniform heating surface with additional circumscribing ring 失效
标题翻译：平面均匀加热表面，带附加外接环
公开(公告)号：US5590239A
公开(公告)日：1996-12-31
申请号：US254845
申请日：1994-06-06
申请人： Douglas J. Resnick , William A. Johnson , Kevin D. Cummings , Hector T. H. Chen
发明人： Douglas J. Resnick , William A. Johnson , Kevin D. Cummings , Hector T. H. Chen
IPC分类号： G03F1/22 , G03F7/20 , G21K1/06 , G21K5/04 , H01L21/00 , H05B1/00 , G21K5/00
CPC分类号： H01L21/67103 , G03F1/22 , G03F7/70866 , G21K1/06 , H01J2237/2001
摘要： A uniform heating fixture and method of use is provided. A heat conductive member having a first plane surface, a second surface and a third plane surface is formed. The first plane surface and the third plane surface are parallel and are connected by a second surface. The third plane surface circumscribes and extends away from the first plane surface, thereby enabling uniform heating of an X-ray mask.
摘要翻译：提供均匀的加热夹具和使用方法。形成具有第一平面，第二表面和第三平面的导热构件。第一平面和第三平面平行并通过第二表面连接。第三平面表面限定并远离第一平面，从而能够均匀地加热X射线掩模。

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