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1. 发明授权

US6027961A CMOS semiconductor devices and method of formation 失效
标题翻译： CMOS半导体器件及其形成方法
公开(公告)号：US6027961A
公开(公告)日：2000-02-22
申请号：US107963
申请日：1998-06-30
申请人： Bikas Maiti , Philip J. Tobin , C. Joseph Mogab , Christopher Hobbs , Larry E. Frisa
发明人： Bikas Maiti , Philip J. Tobin , C. Joseph Mogab , Christopher Hobbs , Larry E. Frisa
IPC分类号： H01L29/78 , H01L21/28 , H01L21/8238 , H01L27/092 , H01L29/423 , H01L29/43 , H01L29/49
CPC分类号： H01L21/823842 , H01L27/0922
摘要： In one embodiment, a metal layer (18) is formed over a gate dielectric layer (14, 16) on a semiconductor substrate. A masking layer (20) is patterned to mask a portion of the metal layer (18). An exposed portion of the metal layer (18) is nitrided to form a conductive nitride layer (24). The masking layer (20) is removed and the conductive nitride layer (24) is patterned to form a first gate electrode (23) having a first work function value, and the conductive layer (18) is patterned to form a second gate electrode (25) having a second work function value which is different from that of the first work function value.
摘要翻译：在一个实施例中，金属层（18）形成在半导体衬底上的栅极介电层（14,16）上。图案化掩模层（20）以掩盖金属层（18）的一部分。金属层（18）的暴露部分被氮化以形成导电氮化物层（24）。去除掩模层（20）并且对导电氮化物层（24）进行图案化以形成具有第一功函数值的第一栅电极（23），并且对导电层（18）进行图案化以形成第二栅极电极 25）具有与第一功函数值不同的第二功函数值。

2. 发明授权

US5510651A Semiconductor device having a reducing/oxidizing conductive material 失效
标题翻译：具有还原/氧化导电材料的半导体器件
公开(公告)号：US5510651A
公开(公告)日：1996-04-23
申请号：US342293
申请日：1994-11-18
申请人： Papu D. Maniar , Reza Moazzami , C. Joseph Mogab
发明人： Papu D. Maniar , Reza Moazzami , C. Joseph Mogab
IPC分类号： H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8246 , H01L23/522 , H01L23/532 , H01L27/04 , H01L27/105 , H01L27/115 , H01L29/43 , H01L29/45 , H01G4/10
CPC分类号： H01L27/11502 , H01L21/76849 , H01L23/5226 , H01L23/53209 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L28/40 , H01L28/60 , H01L29/43 , H01L29/456 , H01L28/55 , H01L2924/0002
摘要： The present invention includes a semiconductor device having a layer including an elemental metal and its conductive metal oxide, wherein the layer is capable being oxidized or reduced preferentially to an adjacent region of the device. The present invention also includes processes for forming the devices. Substrate regions, silicon-containing layers, dielectric layers, electrodes, barrier layers, contact and via plugs, interconnects, and ferroelectric capacitors may be protected by and/or formed with the layer. Examples of elemental metals and their conductive metal oxides that may be used with the present invention are: ruthenium and ruthenium dioxide, rhenium and rhenium dioxide, iridium and iridium dioxide, osmium and osmium tetraoxide, or the like.
摘要翻译：本发明包括具有包含元素金属和其导电金属氧化物的层的半导体器件，其中该层能够被优先地氧化或还原成该器件的相邻区域。本发明还包括用于形成装置的方法。衬底区域，含硅层，电介质层，电极，阻挡层，接触和通孔插塞，互连和铁电电容器可以由层保护和/或形成。可用于本发明的元素金属及其导电金属氧化物的实例是：钌和二氧化钌，铼和二氧化铼，铱和二氧化铱，锇和四氧化锇等。

3. 发明授权

US5337207A High-permittivity dielectric capacitor for use in a semiconductor device and process for making the same 失效
标题翻译：用于半导体器件的高电容率介质电容器及其制造方法
公开(公告)号：US5337207A
公开(公告)日：1994-08-09
申请号：US993987
申请日：1992-12-21
申请人： Robert E. Jones , Papu D. Maniar , C. Joseph Mogab
发明人： Robert E. Jones , Papu D. Maniar , C. Joseph Mogab
IPC分类号： H01G7/06 , H01L21/02 , H01G4/10
CPC分类号： H01L28/55 , H01G7/06
摘要： A high-permittivity dielectric capacitor (28) having a refractory-metal oxide layer (16) framing the first electrode (14) of the capacitor (28) and separating a high-permittivity dielectric layer (24) from an insulating layer (12) underlying the capacitor (28). The high-permittivity dielectric layer (16) makes contact with the first electrode (14) through an opening (18) in the refractory-metal oxide layer (16). The refractory-metal oxide layer (16) separates the high-permittivity dielectric layer (24) from the insulating layer (12) in all regions away from the opening (18) in the refractory-metal oxide layer (16). During fabrication of the capacitor (28), when the high-permittivity dielectric layer (24) is patterned, the refractory-metal oxide layer (16) provides an etch-stop.
摘要翻译：一种具有将电容器（28）的第一电极（14）构成并将绝缘层（12）的高介电常数介电层（24）分隔开的难熔金属氧化物层（16）的高介电电容器（28）位于电容器（28）下方。高介电常数介电层16通过耐火材料 - 金属氧化物层（16）中的开口（18）与第一电极（14）接触。难熔金属氧化物层（16）在远离耐火金属氧化物层（16）中的开口（18）的所有区域中将高电介质介电层（24）与绝缘层（12）分离。在制造电容器（28）期间，当对高电介质介电层（24）进行图案化时，难熔金属氧化物层（16）提供蚀刻停止。

4. 发明授权

US06297169B1 Method for forming a semiconductor device using a mask having a self-assembled monolayer 失效
标题翻译：使用具有自组装单层的掩模形成半导体器件的方法
公开(公告)号：US06297169B1
公开(公告)日：2001-10-02
申请号：US09122710
申请日：1998-07-27
申请人： Pawitter J. S. Mangat , C. Joseph Mogab , Kevin D. Cummings , Allison M. Fisher
发明人： Pawitter J. S. Mangat , C. Joseph Mogab , Kevin D. Cummings , Allison M. Fisher
IPC分类号： H01L21312
CPC分类号： G03F1/20 , B82Y10/00 , B82Y30/00 , G03F1/22 , G03F1/48 , Y10S438/942 , Y10S438/945
摘要： A passivating layer (220) is formed overlying portions of a mask (200). The mask (200) is used to pattern a semiconductor device substrate (62). In accordance with one embodiment of the present invention, the passivating layer (220) is removed prior to patterning the semiconductor device substrate (62). In yet another embodiment, the passivating layer (220) is cleaned prior to patterning the semiconductor device substrate (62) and then left to remain overlying portions of the mask (200) during the patterning process.
摘要翻译：形成覆盖掩模（200）的部分的钝化层（220）。掩模（200）用于对半导体器件基板（62）进行图案化。根据本发明的一个实施例，在图案化半导体器件衬底（62）之前去除钝化层（220）。在另一个实施例中，在图案化半导体器件衬底（62）之前清洁钝化层（220），然后在图案化工艺期间保持覆盖掩模（200）的部分。

5. 发明授权

US5407855A Process for forming a semiconductor device having a reducing/oxidizing conductive material 失效
标题翻译：用于形成具有还原/氧化性导电材料的半导体器件的工艺
公开(公告)号：US5407855A
公开(公告)日：1995-04-18
申请号：US72012
申请日：1993-06-07
申请人： Papu D. Maniar , Reza Moazzami , C. Joseph Mogab
发明人： Papu D. Maniar , Reza Moazzami , C. Joseph Mogab
IPC分类号： H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8246 , H01L23/522 , H01L23/532 , H01L27/04 , H01L27/105 , H01L27/115 , H01L29/43 , H01L29/45 , H01L27/02
CPC分类号： H01L27/11502 , H01L21/76849 , H01L23/5226 , H01L23/53209 , H01L23/53228 , H01L23/53238 , H01L23/5329 , H01L28/40 , H01L28/60 , H01L29/43 , H01L29/456 , H01L28/55 , H01L2924/0002
摘要： The present invention includes a semiconductor device having a layer including an elemental metal and its conductive metal oxide, wherein the layer is capable being oxidized or reduced preferentially to an adjacent region of the device. The present invention also includes processes for forming the devices. Substrate regions, silicon-containing layers, dielectric layers, electrodes, barrier layers, contact and via plugs, interconnects, and ferroelectric capacitors may be protected by and/or formed with the layer. Examples of elemental metals and their conductive metal oxides that may be used with the present invention are: ruthenium and ruthenium dioxide, rhenium and rhenium dioxide, iridium and iridium dioxide, osmium and osmium tetraoxide, or the like.
摘要翻译：本发明包括具有包含元素金属和其导电金属氧化物的层的半导体器件，其中该层能够被优先地氧化或还原成该器件的相邻区域。本发明还包括用于形成装置的方法。衬底区域，含硅层，电介质层，电极，阻挡层，接触和通孔插塞，互连和铁电电容器可以由层保护和/或形成。可用于本发明的元素金属及其导电金属氧化物的实例是：钌和二氧化钌，铼和二氧化铼，铱和二氧化铱，锇和四氧化锇等。

6. 发明授权

US5464711A Process for fabricating an X-ray absorbing mask 失效
标题翻译：用于制造X射线吸收掩模的方法
公开(公告)号：US5464711A
公开(公告)日：1995-11-07
申请号：US283325
申请日：1994-08-01
申请人： C. Joseph Mogab , William J. Dauksher , Douglas J. Resnick
发明人： C. Joseph Mogab , William J. Dauksher , Douglas J. Resnick
IPC分类号： G03F1/22 , H01L21/027 , G03F9/00
CPC分类号： G03F1/22
摘要： A process for the fabrication of an X-ray absorbing mask includes providing a silicon substrate (10) having a front surface (16) and a back surface (18). A membrane layer (12) is formed on the front surface (16). In one embodiment of the invention, an etch stop layer (14) and an X-ray absorbing layer (20) are sequentially formed over the membrane layer (12). In a preferred embodiment, the X-ray absorbing layer (20) is tantalum silicon nitride deposited by RF sputter deposition directly onto the layers overlying the silicon substrate (10). The structure is then annealed at a temperature sufficient to reduce the internal stress in the X-ray absorbing layer (20). Finally, the X-ray absorbing layer is patterned to form a masking pattern (30, 36) on the membrane layer (12).
摘要翻译：一种用于制造X射线吸收掩模的方法包括提供具有前表面（16）和后表面（18）的硅衬底（10）。在前表面（16）上形成膜层（12）。在本发明的一个实施例中，在膜层（12）上依次形成蚀刻停止层（14）和X射线吸收层（20）。在优选实施例中，X射线吸收层（20）是通过RF溅射沉积直接沉积在覆盖硅衬底（10）的层上沉积的氮化硅钽。然后将该结构在足以降低X射线吸收层（20）中的内部应力的温度下退火。最后，将X射线吸收层图案化以在膜层（12）上形成掩模图案（30,36）。

7. 发明授权

US5254217A Method for fabricating a semiconductor device having a conductive metal oxide 失效
标题翻译：制造具有导电金属氧化物的半导体器件的方法
公开(公告)号：US5254217A
公开(公告)日：1993-10-19
申请号：US919328
申请日：1992-07-27
申请人： Papu Maniar , C. Joseph Mogab
发明人： Papu Maniar , C. Joseph Mogab
IPC分类号： H01L21/302 , H01L21/02 , H01L21/3065 , H01L21/3213 , H01L21/8242 , H01L27/108 , C23F1/00
CPC分类号： H01L28/60 , H01L21/32136 , H01L28/55
摘要： A method for patterning a conductive metal oxide film on a substrate surface by means of an oxygen plasma etching process. In one embodiment, a substrate (10) is provided having a ruthenium oxide layer (14) overlying a dielectric layer (12). The substrate is placed on an electrode (24) positioned in a vacuum chamber (20) and the vacuum chamber is evacuated to a low pressure. Oxygen gas is introduced to the vacuum chamber and RF power is applied to form an oxygen plasma within the vacuum chamber. The oxygen plasma preferentially etches the ruthenium oxide layer (14) and does not etch the underlying dielectric layer (12). The oxygen plasma etching process can be used to form high resolution ruthenium oxide features during semiconductor device fabrication of ferroelectric capacitors (60) and other electronic components.

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