会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Double patterning for lithography to increase feature spatial density
    • 用于光刻的双重图案化以增加特征空间密度
    • US08148052B2
    • 2012-04-03
    • US12514777
    • 2007-11-13
    • Anja Monique VanleenhovePeter DirksenDavid Van SteenwinckelGerben DoornbosCasper JuffermansMark Van Dal
    • Anja Monique VanleenhovePeter DirksenDavid Van SteenwinckelGerben DoornbosCasper JuffermansMark Van Dal
    • G03F7/26
    • G03F7/0035G03F7/11H01L21/0271H01L21/0273H01L21/823821H01L29/66795H01L29/6681H01L29/785
    • A method of forming a pattern in at least one device layer in or on a substrate comprises: coating the device layer with a first photoresist layer; exposing the first photoresist using a first mask; developing the first photoresist layer to form a first pattern on the substrate; coating the substrate with a protection layer; treating the protection layer to cause a change therein where it is in contact with the first photoresist, to render the changed protection layer substantially immune to a subsequent exposure and/or developing step; coating the substrate with a second photoresist layer; exposing the second photoresist layer using a second mask; and developing the second photoresist layer to form a second pattern on the substrate without significantly affecting the first pattern in the first photoresist layer, wherein the first and second patterns together define interspersed features having a spatial frequency greater than that of the features defined in each of the first and second patterns separately. The process has particular utility in defining source, drain and fin features of finFET devices with a smaller feature size than otherwise achievable with the prevailing lithography tools.
    • 在衬底中或衬底上的至少一个器件层中形成图案的方法包括:用第一光致抗蚀剂层涂覆器件层; 使用第一掩模曝光第一光致抗蚀剂; 显影第一光致抗蚀剂层以在基底上形成第一图案; 用保护层涂覆基板; 处理保护层以在其中与第一光致抗蚀剂接触的地方发生变化,使得改变的保护层基本上不受随后的曝光和/或显影步骤的影响; 用第二光致抗蚀剂层涂覆基板; 使用第二掩模曝光所述第二光致抗蚀剂层; 并且显影所述第二光致抗蚀剂层以在所述基板上形成第二图案,而不会显着影响所述第一光致抗蚀剂层中的所述第一图案,其中所述第一和第二图案一起限定散布特征,其空间频率大于 第一和第二模式分开。 该方法在定义具有较小的特征尺寸的finFET器件的源极,漏极和鳍片特征方面具有特别的用途,而与主要的光刻工具不同。