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    • 3. 发明申请
    • METHOD FOR TUNING A DEPOSITION RATE DURING AN ATOMIC LAYER DEPOSITION PROCESS
    • 在原子层沉积过程中调节沉积速率的方法
    • US20100062149A1
    • 2010-03-11
    • US12465471
    • 2009-05-13
    • Paul MaJoseph F. AubuchonJiang LuMei Chang
    • Paul MaJoseph F. AubuchonJiang LuMei Chang
    • B05D5/12
    • H01L21/76841C23C16/45534C23C16/52
    • Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
    • 本发明的实施例提供了在诸如原子层沉积(ALD)工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中,提供了一种方法,其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体,并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中,氮化钽沉积在衬底上,并且烷基氨基金属前体气体包含钽前体,例如五(二甲基氨基)钽(PDMAT)),第二前体气体含有氮前体如氨,并且处理气体 含有二甲胺(DMA)。
    • 4. 发明授权
    • Method for tuning a deposition rate during an atomic layer deposition process
    • 在原子层沉积过程中调整沉积速率的方法
    • US09418890B2
    • 2016-08-16
    • US14279260
    • 2014-05-15
    • Paul MaJoseph F. AubuchonJiang LuMei Chang
    • Paul MaJoseph F. AubuchonJiang LuMei Chang
    • H01L21/768C23C16/455C23C16/52
    • H01L21/76841C23C16/45534C23C16/52
    • Embodiments of the invention provide methods for depositing a material on a substrate within a processing chamber during a vapor deposition process, such as an atomic layer deposition (ALD) process. In one embodiment, a method is provided which includes sequentially exposing the substrate to a first precursor gas and at least a second precursor gas while depositing a material on the substrate during the ALD process, and continuously or periodically exposing the substrate to a treatment gas prior to and/or during the ALD process. The deposition rate of the material being deposited may be controlled by varying the amount of treatment gas exposed to the substrate. In one example, tantalum nitride is deposited on the substrate and the alkylamino metal precursor gas contains a tantalum precursor, such as pentakis(dimethylamino) tantalum (PDMAT), the second precursor gas contains a nitrogen precursor, such as ammonia, and the treatment gas contains dimethylamine (DMA).
    • 本发明的实施例提供了在诸如原子层沉积(ALD)工艺的气相沉积工艺期间将材料沉积在处理室内的衬底上的方法。 在一个实施例中,提供了一种方法,其包括在ALD工艺期间将衬底沉积到衬底上的同时将衬底依次暴露于第一前体气体和至少第二前体气体,并且连续地或周期地将衬底暴露于处理气体之前 到和/或在ALD过程期间。 可以通过改变暴露于衬底的处理气体的量来控制被沉积的材料的沉积速率。 在一个实例中,氮化钽沉积在衬底上,并且烷基氨基金属前体气体包含钽前体,例如五(二甲基氨基)钽(PDMAT)),第二前体气体含有氮前体如氨,并且处理气体 含有二甲胺(DMA)。
    • 10. 发明申请
    • LASER GUIDED PARKING ASSISTANCE DEVICE
    • 激光导向停车辅助装置
    • US20170021767A1
    • 2017-01-26
    • US15216987
    • 2016-07-22
    • Jiang LuFangqin Liu
    • Jiang LuFangqin Liu
    • B60Q9/00F21S9/03F21V23/04G05D1/02H05B37/02
    • B60Q9/004B62D15/027G05D1/024H05B33/0806H05B33/0842
    • A laser guided parking assistance device and methods of operation are disclosed. An example laser guided parking assistance device includes a tilt switch to detect a vertical orientation of a horizontal orientation. The laser guided parking assistance device also includes a laser to emit a laser light beam in response to the tilt switch detecting the horizontal orientation. In an example, a laser guided parking assistance device is configured as a circuit including a battery power source, a laser diode connected in series with the battery power source, and a first tilt switch connected between the battery power source and the laser diode. The tilt switch opens in a vertical position to cut electrical power from the battery power source to the laser diode The first tilt switch closes in a horizontal position to connect electrical power from the battery power source to the laser diode.
    • 公开了一种激光引导停车辅助装置和操作方法。 示例性激光引导停车辅助装置包括用于检测水平取向的垂直取向的倾斜开关。 激光引导停车辅助装置还包括激光器,响应于倾斜开关检测水平方向而发射激光束。 在一个示例中,激光引导停车辅助装置被配置为包括电池电源,与电池电源串联的激光二极管和连接在电池电源和激光二极管之间的第一倾斜开关的电路。 倾斜开关处于垂直位置,以将电力从电池电源切割到激光二极管。第一倾斜开关处于水平位置,以将来自电池电源的电力连接到激光二极管。