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1. 发明授权

US06746825B2 Guided self-assembly of block copolymer films on interferometrically nanopatterned substrates 有权
标题翻译：引导自组装嵌段共聚物膜在干涉测量纳米图案衬底上
公开(公告)号：US06746825B2
公开(公告)日：2004-06-08
申请号：US09971442
申请日：2001-10-05
申请人： Paul F. Nealey , Juan J. DePablo , Francesco Cerrina , Harun H. Solak , XiaoMin Yang , Richard D. Peters , Qiang Wang
发明人： Paul F. Nealey , Juan J. DePablo , Francesco Cerrina , Harun H. Solak , XiaoMin Yang , Richard D. Peters , Qiang Wang
IPC分类号： B05D306
CPC分类号： G03F7/26 , B82Y30/00 , G03F7/0002 , G03F7/165 , Y10S430/146 , Y10T156/10 , Y10T428/24058 , Y10T428/2995
摘要： Copolymer structures are formed by exposing a substrate with an imaging layer thereon to two or more beams of selected wavelengths to form interference patterns at the imaging layer to change the wettability of the imaging layer in accordance with the interference patterns. A layer of a selected block copolymer is deposited onto the exposed imaging layer and annealed to separate the components of the copolymer in accordance with the pattern of wettability and to replicate the pattern of the imaging layer in the copolymer layer. Stripes or isolated regions of the separated components may be formed with periodic dimensions in the range of 100 nm or less.
摘要翻译：通过将其上的成像层的基板暴露于选定波长的两个或更多个波束以形成在成像层处的干涉图案以根据干涉图案改变成像层的润湿性而形成共聚物结构。将选择的嵌段共聚物的层沉积到曝光的成像层上并退火，以根据润湿性的图案分离共聚物的组分并复制共聚物层中成像层的图案。分离的组分的条带或隔离区域可以以100nm或更小的周期尺寸形成。

2. 发明授权

US06926953B2 Guided self-assembly of block copolymer films on interferometrically nanopatterned substrates 有权
标题翻译：引导自组装嵌段共聚物膜在干涉测量纳米图案衬底上
公开(公告)号：US06926953B2
公开(公告)日：2005-08-09
申请号：US10800923
申请日：2004-03-15
申请人： Paul F. Nealey , Juan J. DePablo , Francesco Cerrina , Harun H. Solak , XiaoMin Yang , Richard D. Peters , Qiang Wang
发明人： Paul F. Nealey , Juan J. DePablo , Francesco Cerrina , Harun H. Solak , XiaoMin Yang , Richard D. Peters , Qiang Wang
IPC分类号： G03F7/00 , G03F7/16 , G03F7/26 , G03F7/38 , B32B31/04
CPC分类号： G03F7/26 , B82Y30/00 , G03F7/0002 , G03F7/165 , Y10S430/146 , Y10T156/10 , Y10T428/24058 , Y10T428/2995
摘要： Copolymer structures are formed by exposing a substrate with an imaging layer thereon to two or more beams of selected wavelengths to form interference patterns at the imaging layer to change the wettability of the imaging layer in accordance with the interference patterns. A layer of a selected block copolymer is deposited onto the exposed imaging layer and annealed to separate the components of the copolymer in accordance with the pattern of wettability and to replicate the pattern of the imaging layer in the copolymer layer. Stripes or isolated regions of the separated components may be formed with periodic dimensions in the range of 100 nm or less.
摘要翻译：通过将其上的成像层的基板暴露于选定波长的两个或更多个波束以形成在成像层处的干涉图案以根据干涉图案改变成像层的润湿性而形成共聚物结构。将选择的嵌段共聚物的层沉积到曝光的成像层上并退火，以根据润湿性的图案分离共聚物的组分并复制共聚物层中成像层的图案。分离的组分的条带或隔离区域可以以100nm或更小的周期尺寸形成。

3. 发明申请

US20120196089A1 CHEMICALLY-MODIFIED PILLAR SURFACE TO GUIDE CYLINDER-FORMING P(S-b-MMA) BLOCK COPOLYMER ASSEMBLY 有权
标题翻译：化学改性柱面指导气缸成型P（S-b-MMA）嵌段共聚物组件
公开(公告)号：US20120196089A1
公开(公告)日：2012-08-02
申请号：US13018414
申请日：2011-01-31
申请人： XiaoMin Yang , Wei Hu , Zhaoning Yu , Justin Jia-Jen Hwu , Kim Yang Lee
发明人： XiaoMin Yang , Wei Hu , Zhaoning Yu , Justin Jia-Jen Hwu , Kim Yang Lee
IPC分类号： B32B3/00 , B05D3/02 , B28B11/08
CPC分类号： B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/165 , Y10T428/24479
摘要： A method of self-assembling density multiplied block copolymers (BCP) structures includes applying a block copolymer (BCP) to a feature-imprinted resist layer. The BCP is thermally annealed to laterally segregate the BCP into self-assembled columns of a first polymer block surrounded by a second polymer block.
摘要翻译：自组装密度倍增嵌段共聚物（BCP）结构的方法包括将嵌段共聚物（BCP）施加到特征印记的抗蚀剂层上。 BCP被热退火以将BCP横向分离成由第二聚合物嵌段包围的第一聚合物嵌段的自组装柱。

4. 发明授权

US08259411B2 Fabrication of trapezoidal pole for magnetic recording 有权
标题翻译：用于磁记录的梯形极的制造
公开(公告)号：US08259411B2
公开(公告)日：2012-09-04
申请号：US12116798
申请日：2008-05-07
申请人： XiaoMin Yang , Shuaigang Xiao , Jie Gong , Michael Seigler
发明人： XiaoMin Yang , Shuaigang Xiao , Jie Gong , Michael Seigler
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , C25D5/10 , C25D5/14 , G11B5/1278 , G11B5/3116 , Y10T29/49021
摘要： A method for forming a magnetic write pole with a trapezoidal cross-section is described. The method consists of first forming a magnetic seedlayer on a base followed by depositing a removable material layer on the seedlayer, and then a resist layer on the removable material layer. A trench is then formed in the resist, and the resist is heated to cause the cross-sectional profile of the trench to assume a trapezoidal shape. The resist is then capped with another resist layer and further heated to cause the width of the trapezoidal trench to become narrower. The cap layer and removable material layer at the bottom of the trench are then removed and the trench filled with magnetic material by electroplating. The resist and seedlayer external to the trench are finally removed to form a write pole with a trapezoidal cross-section.
摘要翻译：描述了形成具有梯形截面的磁性写入极的方法。该方法包括首先在基底上形成磁性种子层，然后在种子层上沉积可去除的材料层，然后在可移除材料层上形成抗蚀剂层。然后在抗蚀剂中形成沟槽，并且加热抗蚀剂以使沟槽的横截面轮廓呈现梯形。然后将抗蚀剂用另一抗蚀剂层封盖，并进一步加热，使梯形沟槽的宽度变窄。然后去除沟槽底部的覆盖层和可移除材料层，并通过电镀填充磁性材料的沟槽。最后去除沟槽外部的抗蚀剂和籽晶层以形成具有梯形横截面的写入极。

5. 发明申请

US20090004609A1 Lithography process 有权
标题翻译：平版印刷工艺
公开(公告)号：US20090004609A1
公开(公告)日：2009-01-01
申请号：US11824124
申请日：2007-06-29
申请人： XiaoMin Yang , Shuaigang Xiao
发明人： XiaoMin Yang , Shuaigang Xiao
IPC分类号： G03F7/30 , G03F7/20 , B05D3/02
CPC分类号： G03F7/70 , B82Y10/00 , G03F7/2022 , G03F7/40 , G11B5/743 , G11B5/746 , G11B5/82 , G11B5/855
摘要： A lithography process for manufacturing bit-island storage mediums that results in improved resolution and uniformity between bit-islands. The lithography process includes applying a resist coating polymer to a surface of a substrate. Selected areas of the resist coating polymer are then exposed to an energy source, wherein each selected area is exposed to the energy source multiple times to provide a time-averaged exposure of the selected areas that reduces errors caused by noise associated with the energy source. After exposure of the resist coating to the energy source, a selective developer solution is applied to the resist coating to develop the fully exposed regions of the resist coating while leaving undeveloped the partially exposed regions of the resist coating. A polymer reflow material is applied to the developed resist pattern and heated to a selected temperature. The polymer reflow material and selected temperature induce reflow of the developed resist coating such that such that a circumferential diameter associated with the holes formed in the resist pattern is reduced to a desired value distance. The process of inducing reflow of the resist coating can be repeated as desired to achieve a resist pattern wherein the holes formed in the resist pattern are reduced to a desired size. The resist pattern formed on the substrate is then transferred to a magnetic medium to form the desired pattern of bit-islands.
摘要翻译：用于制造比特岛存储介质的光刻工艺，其导致位岛之间的分辨率和均匀性得到改善。光刻工艺包括将抗蚀涂层聚合物涂覆在基材的表面上。然后将抗蚀剂涂层聚合物的选定区域暴露于能量源，其中每个选择的区域多次暴露于能量源，以提供所选区域的时间平均曝光，其减少由与能量源相关联的噪声引起的误差。在将抗蚀剂涂层暴露于能量源之后，将选择性显影剂溶液施加到抗蚀剂涂层上，以形成抗蚀剂涂层的完全曝光区域，同时留下未显影抗蚀剂涂层的部分曝光区域。将聚合物回流材料施加到显影的抗蚀剂图案上并加热至选定的温度。聚合物回流材料和所选择的温度引起显影的抗蚀剂涂层的回流，使得与形成在抗蚀剂图案中的孔相关联的圆周直径减小到期望的值距离。可以根据需要重复感应抗蚀剂涂层的回流的过程，以实现抗蚀剂图案，其中形成在抗蚀剂图案中的孔被还原成所需的尺寸。然后将形成在基板上的抗蚀剂图案转移到磁性介质以形成所需的位岛图案。

6. 发明授权

US08404432B2 Lithography process 有权
公开(公告)号：US08404432B2
公开(公告)日：2013-03-26
申请号：US11824124
申请日：2007-06-29
申请人： XiaoMin Yang , Shuaigang Xiao
发明人： XiaoMin Yang , Shuaigang Xiao
IPC分类号： G03F7/20
CPC分类号： G03F7/70 , B82Y10/00 , G03F7/2022 , G03F7/40 , G11B5/743 , G11B5/746 , G11B5/82 , G11B5/855
摘要： A lithography process for manufacturing bit-island storage mediums that results in improved resolution and uniformity between bit-islands. The lithography process includes applying a resist coating polymer to a surface of a substrate. Selected areas of the resist coating polymer are then exposed to an energy source, wherein each selected area is exposed to the energy source multiple times to provide a time-averaged exposure of the selected areas that reduces errors caused by noise associated with the energy source. After exposure of the resist coating to the energy source, a selective developer solution is applied to the resist coating to develop the fully exposed regions of the resist coating while leaving undeveloped the partially exposed regions of the resist coating. A polymer reflow material is applied to the developed resist pattern and heated to a selected temperature. The polymer reflow material and selected temperature induce reflow of the developed resist coating such that such that a circumferential diameter associated with the holes formed in the resist pattern is reduced to a desired value distance. The process of inducing reflow of the resist coating can be repeated as desired to achieve a resist pattern wherein the holes formed in the resist pattern are reduced to a desired size. The resist pattern formed on the substrate is then transferred to a magnetic medium to form the desired pattern of bit-islands.

7. 发明申请

US20130010387A1 POLE FOR MAGNETIC RECORDING 有权
标题翻译：磁记录
公开(公告)号：US20130010387A1
公开(公告)日：2013-01-10
申请号：US13602915
申请日：2012-09-04
申请人： XiaoMin Yang , Shuaigang Xiao , Jie Gong , Michael Seigler
发明人： XiaoMin Yang , Shuaigang Xiao , Jie Gong , Michael Seigler
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , C25D5/10 , C25D5/14 , G11B5/1278 , G11B5/3116 , Y10T29/49021
摘要： A method for forming a magnetic write pole with a trapezoidal cross-section is described. The method consists of first forming a magnetic seedlayer on a base followed by depositing a removable material layer on the seedlayer, and then a resist layer on the removable material layer. A trench is then formed in the resist, and the resist is heated to cause the cross-sectional profile of the trench to assume a trapezoidal shape. The resist is then capped with another resist layer and further heated to cause the width of the trapezoidal trench to become narrower. The cap layer and removable material layer at the bottom of the trench are then removed and the trench filled with magnetic material by electroplating. The resist and seedlayer external to the trench are finally removed to form a write pole with a trapezoidal cross-section.
摘要翻译：描述了形成具有梯形截面的磁性写入极的方法。该方法包括首先在基底上形成磁性种子层，然后在种子层上沉积可去除的材料层，然后在可移除材料层上形成抗蚀剂层。然后在抗蚀剂中形成沟槽，并且加热抗蚀剂以使沟槽的横截面轮廓呈现梯形。然后将抗蚀剂用另一抗蚀剂层封盖，并进一步加热，使梯形沟槽的宽度变窄。然后去除沟槽底部的覆盖层和可移除材料层，并通过电镀填充磁性材料的沟槽。最后去除沟槽外部的抗蚀剂和籽晶层以形成具有梯形横截面的写入极。

8. 发明申请

US20100104768A1 METHOD OF MAKING OPTICAL TRANSDUCERS 审中-公开
标题翻译：制造光学传感器的方法
公开(公告)号：US20100104768A1
公开(公告)日：2010-04-29
申请号：US12260228
申请日：2008-10-29
申请人： Shuaigang Xiao , XiaoMin Yang , Keith Mountfield
发明人： Shuaigang Xiao , XiaoMin Yang , Keith Mountfield
IPC分类号： B05D3/06 , B05D5/12
CPC分类号： G11B5/3163 , G11B5/314 , G11B5/6088 , G11B2005/0021
摘要： A process for making an optical transducer that includes depositing a lower molecular weight first layer and a higher molecular weight second layer. E-beam radiation is applied to the first and second layers which are developed to form an aperture. The aperture includes a resist protrusion in the second layer. The resist protrusion protrudes outward beyond the first layer. Metal is evaporated through the aperture to form the optical transducer. The resist protrusion defines a shape of a concave metal transducer corner.
摘要翻译：一种制造光学换能器的方法，包括沉积较低分子量的第一层和较高分子量的第二层。将电子束辐射施加到被显影以形成孔的第一和第二层。孔包括在第二层中的抗蚀剂突起。抗蚀剂突起向外突出超出第一层。金属通过孔被蒸发以形成光学换能器。抗蚀剂突起限定凹形金属转换器角的形状。

9. 发明申请

US20090279206A1 FABRICATION OF TRAPEZOIDAL POLE FOR MAGNETIC RECORDING 有权
标题翻译：用于磁记录的铁皮石的制造
公开(公告)号：US20090279206A1
公开(公告)日：2009-11-12
申请号：US12116798
申请日：2008-05-07
申请人： XiaoMin Yang , Shuaigang Xiao , Jie Gong , Michael Seigler
发明人： XiaoMin Yang , Shuaigang Xiao , Jie Gong , Michael Seigler
IPC分类号： G11B5/127 , C25D5/02
CPC分类号： G11B5/3163 , C25D5/10 , C25D5/14 , G11B5/1278 , G11B5/3116 , Y10T29/49021
摘要： A method for forming a magnetic write pole with a trapezoidal cross-section is described. The method consists of first forming a magnetic seedlayer on a base followed by depositing a removable material layer on the seedlayer, and then a resist layer on the removable material layer. A trench is then formed in the resist, and the resist is heated to cause the cross-sectional profile of the trench to assume a trapezoidal shape. The resist is then capped with another resist layer and further heated to cause the width of the trapezoidal trench to become narrower. The cap layer and removable material layer at the bottom of the trench are then removed and the trench filled with magnetic material by electroplating. The resist and seedlayer external to the trench are finally removed to form a write pole with a trapezoidal cross-section.
摘要翻译：描述了形成具有梯形截面的磁性写入极的方法。该方法包括首先在基底上形成磁性种子层，然后在种子层上沉积可去除的材料层，然后在可移除材料层上形成抗蚀剂层。然后在抗蚀剂中形成沟槽，并且加热抗蚀剂以使沟槽的横截面轮廓呈现梯形。然后将抗蚀剂用另一抗蚀剂层封盖，并进一步加热，使梯形沟槽的宽度变窄。然后去除沟槽底部的覆盖层和可移除材料层，并通过电镀填充磁性材料的沟槽。最后去除沟槽外部的抗蚀剂和籽晶层以形成具有梯形横截面的写入极。

10. 发明授权

US09469525B2 Modified surface for block copolymer self-assembly 有权
标题翻译：用于嵌段共聚物自组装的改性表面
公开(公告)号：US09469525B2
公开(公告)日：2016-10-18
申请号：US13018414
申请日：2011-01-31
申请人： XiaoMin Yang , Wei Hu , Zhaoning Yu , Justin Jia-Jen Hwu , Kim Yang Lee
发明人： XiaoMin Yang , Wei Hu , Zhaoning Yu , Justin Jia-Jen Hwu , Kim Yang Lee
IPC分类号： B81C1/00 , G03F7/00 , G03F7/16 , B82Y10/00 , B82Y40/00
CPC分类号： B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00 , G03F7/0002 , G03F7/165 , Y10T428/24479
摘要： A method of self-assembling density multiplied block copolymers (BCP) structures includes applying a block copolymer (BCP) to a feature-imprinted resist layer. The BCP is thermally annealed to laterally segregate the BCP into self-assembled columns of a first polymer block surrounded by a second polymer block.
摘要翻译：自组装密度倍增嵌段共聚物（BCP）结构的方法包括将嵌段共聚物（BCP）施加到特征印记的抗蚀剂层上。 BCP被热退火以将BCP横向分离成由第二聚合物嵌段包围的第一聚合物嵌段的自组装柱。

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