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1. 发明授权

US5378651A Comprehensive process for low temperature epitaxial growth 失效
标题翻译：低温外延生长的综合工艺
公开(公告)号：US5378651A
公开(公告)日：1995-01-03
申请号：US56697
申请日：1993-04-30
申请人： Paul D. Agnello , Detlev A. Gruetzmacher , Tung-Sheng Kuan , Thomas O. Sedgwick
发明人： Paul D. Agnello , Detlev A. Gruetzmacher , Tung-Sheng Kuan , Thomas O. Sedgwick
IPC分类号： C30B25/02 , H01L21/205 , H01L21/203
CPC分类号： C30B29/06 , C30B25/02 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02636
摘要： A system and method for growing low defect density epitaxial layers of Si on imperfectly cleaned Si surfaces by either selective or blanket deposition at low temperatures using the APCVD process wherein a first thin, e.g., 10 nm, layer of Si is grown on the surface from silane or disilane, followed by the growing of the remainder of the film from dichlorosilane (DCS) at the same low temperature, e.g., 550.degree. C. to 850.degree. C. The subsequent growth of the second layer with DCS over the first layer, especially if carried out immediately in the very same deposition system, will not introduce additional defects and may be coupled with high and controlled n-type doping which is not available in a silane-based system. Further, in order to achieve an optimal trade-off between the need for an inert ambience to promote silane reaction at low temperature and the need for a hydrogen ambience to prevent surface oxidation from inadvertant residual impurities, depositions are carried out in an ambience composed primarily of He but always containing some H.sub.2. Also, the relative deposition rates on a patterned surface of polycrystalline Si on insulator areas and single crystal Si on single crystal seed areas, when using the reactant silane, are dependent on the temperature of deposition and the relative concentrations of hydrogen and inert gas, e.g., helium, in the ambient gas, and can be controlled by regulating these parameters.
摘要翻译：通过使用APCVD工艺在低温下通过选择性或覆盖沉积在不完全清洁的Si表面上生长Si的低缺陷密度外延层的系统和方法，其中在表面上生长第一薄例如10nm的Si层，硅烷或乙硅烷，然后在相同的低温（例如550℃至850℃）下从二氯硅烷（DCS）中生长剩余的膜。随后在第一层上用DCS生长第二层，特别是如果在相同的沉积系统中立即进行，则不会引入额外的缺陷，并且可能与在硅烷系统中不可用的高且受控的n型掺杂相结合。此外，为了在惰性气氛促进低温下的硅烷反应的需要和氢气氛的需要之间实现最佳的权衡，以防止表面氧化从不经意的残留杂质，沉积在主要组成的环境中进行他总是含有一些H2。此外，当使用反应物硅烷时，在单晶种子区域上的多晶Si绝缘体区域和单晶Si的图案化表面上的相对沉积速率取决于沉积温度和氢气和惰性气体的相对浓度，例如，氦气，在环境气体中，并且可以通过调节这些参数来控制。

2. 发明授权

US5227330A Comprehensive process for low temperature SI epit axial growth 失效
标题翻译：低温SI的轴向生长综合过程
公开(公告)号：US5227330A
公开(公告)日：1993-07-13
申请号：US785731
申请日：1991-10-31
申请人： Paul D. Agnello , Tung-Sheng Kuan , Thomas O. Sedgwick
发明人： Paul D. Agnello , Tung-Sheng Kuan , Thomas O. Sedgwick
IPC分类号： C30B25/02 , H01L21/205
CPC分类号： C30B29/06 , C30B25/02 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02636
摘要： A system and method for growing low defect density epitaxial layers of Si on imperfectly cleaned Si surfaces by either selective or blanket deposition at low temperatures using the APCVD process wherein a first thin, e.g., 10 nm, layer of Si is grown on the surface from silane or disilane, followed by the growing of the remainder of the film from dichlorosilane (DCS) at the same low temperature, e.g., 550.degree. C. to 850.degree. C. The subsequent growth of the second layer with DCS over the first layer, especially if carried out immediately in the very same deposition system, will not introduce additional defects and may be coupled with high and controlled n-type doping which is not available in a silane-based system. Further, in order to achieve an optimal trade-off between the need for an inert ambience to promote silane reaction at low temperature and the need for a hydrogen ambience to prevent surface oxidation from inadvertant residual impurities, depositions are carried out in an ambience composed primarily of He but always containing some H.sub.2. Alternatively, instead of using He for H.sub.2 as the primary carrier gas when depositing Si from silane at low temperatures, DCS with a diborane additive may be used instead of silane in the normal hydrogen carrier. This modification permits DCS to be used in atmospheric pressure processes for Si deposition at low temperatures, which conventionally deposit Si selectively, to deposit blanket (non-selective) Si films over insulator and Si areas, and particularly such areas on a patterned wafer. Because the Si deposition rate is enhanced when diborane is added, significant non-selective deposition rates can occur down to 550.degree. C.
摘要翻译：通过使用APCVD工艺在低温下通过选择性或覆盖沉积在不完全清洁的Si表面上生长Si的低缺陷密度外延层的系统和方法，其中在表面上生长第一薄例如10nm的Si层，硅烷或乙硅烷，然后在相同的低温（例如550℃至850℃）下从二氯硅烷（DCS）中生长剩余的膜。随后在第一层上用DCS生长第二层，特别是如果在相同的沉积系统中立即进行，则不会引入额外的缺陷，并且可能与在硅烷系统中不可用的高且受控的n型掺杂相结合。此外，为了在惰性气氛促进低温下的硅烷反应的需要和氢气氛的需要之间实现最佳的权衡，以防止表面氧化从不经意的残留杂质，沉积在主要组成的环境中进行他总是含有一些H2。或者，代替在低温下从硅烷沉积Si时，He代替H 2作为主要载气，可以使用具有乙硼烷添加剂的DCS代替常规氢载体中的硅烷。该修改允许DCS用于在低温下通常沉积Si的低温Si沉积的大气压力工艺中，以在绝缘体和Si区域上，特别是在图案化晶片上的这些区域上沉积覆盖层（非选择性）Si膜。由于当加入乙硼烷时Si沉积速率增加，因此显着的非选择性沉积速率可能下降到550℃。

3. 发明授权

US4316209A Metal/silicon contact and methods of fabrication thereof 失效
标题翻译：金属/硅接触及其制造方法
公开(公告)号：US4316209A
公开(公告)日：1982-02-16
申请号：US071528
申请日：1979-08-31
申请人： Paul S. Ho , Uwe Koster , Tung-Sheng Kuan , Iwao Ohdomari , Arnold Reisman
发明人： Paul S. Ho , Uwe Koster , Tung-Sheng Kuan , Iwao Ohdomari , Arnold Reisman
IPC分类号： H01L29/43 , H01L21/28 , H01L21/285 , H01L29/45 , H01L29/47 , H01L29/872 , H01L23/48 , H01L29/46 , H01L29/62
CPC分类号： H01L21/28518 , H01L21/28537 , H01L29/456 , H01L29/47
摘要： Methods and resulting structures for thermally stable metal/silicon contacts are described. The resulting contacts are aluminum which is alloyed with at least one noble metal from the group of Pd and Pt wherein at least one region of the contact is further alloyed with silicon.
摘要翻译：描述了用于热稳定的金属/硅接触的方法和结果。所得到的触点是铝，其与至少一种来自Pd和Pt的贵金属合金化，其中接触的至少一个区域进一步与硅合金化。

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