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    • 5. 发明授权
    • Annular waveguide vertical cavity surface emitting laser and method of
fabrication
    • 环形波导垂直腔表面发射激光器及其制造方法
    • US5963576A
    • 1999-10-05
    • US905339
    • 1997-08-04
    • Paul ClaisseWenbin JiangPhilip Kiely
    • Paul ClaisseWenbin JiangPhilip Kiely
    • H01S5/10H01S5/183H01S3/08H01S3/19
    • H01S5/18391H01S2301/163H01S2301/166H01S5/18327
    • An annular waveguide VCSEL for achieving a stable high power single high order mode output including a first mirror stack with mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system lattice matched to an active region. The active region includes an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having at least one quantum well. The VCSEL further includes a second mirror stack lattice matched to the second cladding region and having mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system. The second mirror stack including an etched region, thereby defining an annular emission region through which light generated by the annular waveguide VCSEL is emitted.
    • 一种用于实现稳定的大功率单高阶模输出的环形波导VCSEL,包括在与有源区匹配的Al x Ga 1-x As / Al y Ga 1-y As材料体系晶格中具有镜对的第一反射镜叠层。 有源区包括夹在邻近第一反射镜叠层的第一包层区域和第二包层区域之间的有源结构,该有源结构具有至少一个量子阱。 VCSEL还包括与第二包层区域匹配的第二反射镜堆叠晶格并且在Al x Ga 1-x As / Al y Ga 1-y As材料体系中具有镜对。 第二反射镜叠层包括蚀刻区域,从而限定环形发射区域,通过该环形发射区域发射由环形波导VCSEL产生的光。