专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5838705A Light emitting device having a defect inhibition layer 失效
标题翻译：具有缺陷抑制层的发光器件
公开(公告)号：US5838705A
公开(公告)日：1998-11-17
申请号：US743288
申请日：1996-11-04
申请人： Chang-Long Shieh , Wenbin Jiang , Paul Claisse , Craig A. Gaw
发明人： Chang-Long Shieh , Wenbin Jiang , Paul Claisse , Craig A. Gaw
IPC分类号： H01L33/10 , H01S5/183 , H01S5/32 , H01S5/343 , H01S3/19 , H01L33/00 , H01S3/08
CPC分类号： H01S5/18308 , B82Y20/00 , H01L33/105 , H01S2301/173 , H01S2301/176 , H01S5/18327 , H01S5/2059 , H01S5/3201 , H01S5/3211 , H01S5/3218 , H01S5/34313
摘要： A first stack (112) of distributed Bragg reflectors, a first cladding region (114) disposed on the first stack of distributed Bragg reflectors (112) and including a defect inhibition layer (117) an active area (122) disposed on the first cladding region (114), a second cladding region (132) disposed on the active area (122) and including a defective inhibition layer (136), and a second stack (140) of distributed Bragg reflectors disposed on the second cladding region (132). The defect inhibition layers (117, 136) substantially prevent defects in the active area (122).
摘要翻译：分布布拉格反射器的第一叠层（112），布置在分布布拉格反射器（112）的第一叠层上的第一包层区域（114），并且包括缺陷抑制层（117）设置在第一包层上的有源区域区域（114），设置在有源区域（122）上并且包括不良抑制层（136）的第二包层区域（132）和布置在第二包层区域（132）上的分布布拉格反射器的第二堆叠（140）。缺陷抑制层（117,136）基本上防止了有源区域（122）中的缺陷。

2. 发明授权

US5995531A VCSEL having polarization control and method of making same 失效
标题翻译：具有偏振控制的VCSEL及其制造方法
公开(公告)号：US5995531A
公开(公告)日：1999-11-30
申请号：US963624
申请日：1997-11-04
申请人： Craig A. Gaw , Wenbin Jiang , Benjamin W. Gable
发明人： Craig A. Gaw , Wenbin Jiang , Benjamin W. Gable
IPC分类号： H01S5/183 , H01S5/20 , H01S3/08 , H01L21/20
CPC分类号： H01S5/18355 , H01S5/18308 , H01S5/18327 , H01S5/18338 , H01S5/2063
摘要： A vertical cavity surface emitting laser with polarization control includes a first stack of distributed Bragg reflectors positioned on a substrate with an active region including a first cladding region and a second cladding region positioned on opposite sides of an active area overlying the first stack of distributed Bragg reflectors A second stack of distributed Bragg reflectors is positioned on the active region. The second stack has an ion implantation region formed to control and define a lasing threshold of the laser. The second stack further is formed into a ridge with the ridge being etched into the ion implantation region to form an elongated shape so as to polarize light emitted by the second stack of distributed Bragg reflectors
摘要翻译：具有偏振控制的垂直腔表面发射激光器包括位于衬底上的分布式布拉格反射器的第一叠层，其具有有源区域，该有源区域包括第一覆层区域和位于覆盖分布布拉格的第一堆叠层的有源区域相对侧上的第二覆盖区域反射器第二层分布式布拉格反射器位于有源区上。第二堆叠具有形成为控制和限定激光器的激光阈值的离子注入区域。第二堆叠进一步形成为脊，其中脊被蚀刻到离子注入区域中以形成细长形状，以便使由分布布拉格反射器的第二堆叠发射的光偏振

3. 发明授权

US5939773A Semiconductor laser package including a lead frame and plastic resin housing 失效
标题翻译：半导体激光器封装包括引线框架和塑料树脂外壳
公开(公告)号：US5939773A
公开(公告)日：1999-08-17
申请号：US692355
申请日：1996-08-05
申请人： Wenbin Jiang , Michael S. Lebby , Craig A. Gaw
发明人： Wenbin Jiang , Michael S. Lebby , Craig A. Gaw
IPC分类号： H01S5/022 , H01L23/495 , H01L23/02 , H01L23/28
CPC分类号： H01S5/02244 , H01S5/02228 , H01L2924/0002 , H01S5/02288 , H01S5/0683 , H01S5/183
摘要： A semiconductor laser package including a laser chip mounted to a leadframe, and a plastic resin housing for encapsulating the laser chip. The laser chip composed of a vertical cavity surface emitting laser and a photodetector. The vertical cavity surface emitting laser generating an emission along a path. The leadframe being positioned a fixed distance from an emission window formed in the plastic resin housing. The laser chip mounted in precise z-axis alignment from the emission window utilizing the leadframe as a dimensional reference point, with the bump height compensating for variations in laser chip dimension. An optical element is optionally positioned in the path to reflect a portion of the emission.
摘要翻译：一种半导体激光器封装，包括安装在引线框架上的激光芯片和用于封装激光芯片的塑料树脂外壳。激光芯片由垂直腔表面发射激光器和光电检测器组成。垂直腔表面发射激光器沿着路径产生发射。引线框架与形成在塑料树脂壳体中的发射窗口定位一定距离。激光芯片以发射窗口的精确z轴对准，利用引线框架作为尺寸参考点，凸起高度补偿了激光芯片尺寸的变化。光学元件可选地位于路径中以反映发射的一部分。

4. 发明授权

US5917848A Vertical cavity surface emitting laser with phase shift mask 失效
标题翻译：具有相移掩模的垂直腔表面发射激光器
公开(公告)号：US5917848A
公开(公告)日：1999-06-29
申请号：US895780
申请日：1997-07-17
申请人： Paul Claisse , Wenbin Jiang
发明人： Paul Claisse , Wenbin Jiang
IPC分类号： H01S5/183 , H01S3/085
CPC分类号： H01S5/18391 , H01S2301/203 , H01S5/005 , H01S5/18369 , H01S5/18377
摘要： A vertical cavity surface emitting laser (VCSEL) with an integrated phase shift mask for use in an optical pickup head for high density optical storage applications and a method of fabrication. The VCSEL is capable of emitting a power output of at least 10 mW. The phase shift mask is integrated with the VCSEL to allow for a 180.degree. shift in light emitted therethrough, thereby creating a reduced focal spot size for high density data write applications. The VCSEL with integrated phase shift mask is utilized in an optical pickup head capable of high density read and write applications for both CDs and DVDs.
摘要翻译：具有集成相移掩模的垂直腔表面发射激光器（VCSEL），用于用于高密度光存储应用的光学拾取头和制造方法。 VCSEL能够发射至少10 mW的功率输出。相移掩模与VCSEL集成，以允许在其中发射的光的180度偏移，从而为高密度数据写入应用产生减小的焦点尺寸。具有集成相移掩模的VCSEL被用于能够对于CD和DVD进行高密度读和写应用的光学拾取头。

5. 发明授权

US5832017A Reliable near IR VCSEL 失效
标题翻译：靠近IR VCSEL可靠
公开(公告)号：US5832017A
公开(公告)日：1998-11-03
申请号：US616419
申请日：1996-03-15
申请人： Jamal Ramdani , Wenbin Jiang , Paul Claisse
发明人： Jamal Ramdani , Wenbin Jiang , Paul Claisse
IPC分类号： H01S5/183 , H01S3/19 , H01L21/20
CPC分类号： H01S5/183 , B82Y20/00 , H01S5/34306 , H01S5/3434
摘要： A near IR VCSEL including a mirror stack positioned on a substrate, formed of a plurality of pairs of relatively high and low index of refraction layers a second mirror stack formed of a plurality of pairs of relatively high and low index of refraction layers, an active region sandwiched between the first stack and the second stack, the active region being formed of active layers of GaInAsP having barrier layers of GaAlAs sandwiched therebetween.
摘要翻译：近红外VCSEL，包括位于基板上的反射镜堆叠，由多对相对较高和较低的折射率层组成，第二反射镜叠层由多对相对较高和较低的折射率折射率层组成，主动区域夹在第一堆叠和第二堆叠之间，有源区域由具有夹在其间的GaAlAs阻挡层的GaInAsP的有源层形成。

6. 发明授权

US5719893A Passivated vertical cavity surface emitting laser 失效
标题翻译：钝化垂直腔表面发射激光
公开(公告)号：US5719893A
公开(公告)日：1998-02-17
申请号：US682473
申请日：1996-07-17
申请人： Wenbin Jiang , Paul Claisse , Michael S. Lebby
发明人： Wenbin Jiang , Paul Claisse , Michael S. Lebby
IPC分类号： H01S5/00 , H01S5/028 , H01S5/183 , H01S3/19
CPC分类号： H01S5/18308 , B82Y20/00 , H01S2301/176 , H01S5/0282 , H01S5/18361 , H01S5/2063 , H01S5/34313
摘要： A passivated vertical cavity surface emitting laser including a first stack of distributed Bragg reflectors disposed on the surface of a semiconductor substrate, a first cladding region disposed on the first stack, an active region disposed on the first cladding region, a second cladding region disposed on the active region, and a second stack of distributed Bragg reflectors disposed on the second cladding region. A passivation layer having an optical thickness of an integral multiple of approximately one half of the wavelength of emitted light is disposed on the vertical cavity surface emitting laser.
摘要翻译：一种被钝化的垂直腔表面发射激光器，包括设置在半导体衬底的表面上的分布式布拉格反射器的第一堆叠，设置在第一堆叠上的第一包层区域，设置在第一包层区域上的有源区域，有源区和布置在第二包层区上的分布布拉格反射器的第二叠层。在垂直空腔表面发射激光器上设置具有发射光波长的约一半的光学厚度的整体倍数的钝化层。

7. 发明授权

US5963576A Annular waveguide vertical cavity surface emitting laser and method of fabrication 失效
标题翻译：环形波导垂直腔表面发射激光器及其制造方法
公开(公告)号：US5963576A
公开(公告)日：1999-10-05
申请号：US905339
申请日：1997-08-04
申请人： Paul Claisse , Wenbin Jiang , Philip Kiely
发明人： Paul Claisse , Wenbin Jiang , Philip Kiely
IPC分类号： H01S5/10 , H01S5/183 , H01S3/08 , H01S3/19
CPC分类号： H01S5/18391 , H01S2301/163 , H01S2301/166 , H01S5/18327
摘要： An annular waveguide VCSEL for achieving a stable high power single high order mode output including a first mirror stack with mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system lattice matched to an active region. The active region includes an active structure sandwiched between a first cladding region adjacent the first mirror stack and a second cladding region, the active structure having at least one quantum well. The VCSEL further includes a second mirror stack lattice matched to the second cladding region and having mirror pairs in a Al.sub.x Ga.sub.1-x As/Al.sub.y Ga.sub.1-y As material system. The second mirror stack including an etched region, thereby defining an annular emission region through which light generated by the annular waveguide VCSEL is emitted.
摘要翻译：一种用于实现稳定的大功率单高阶模输出的环形波导VCSEL，包括在与有源区匹配的Al x Ga 1-x As / Al y Ga 1-y As材料体系晶格中具有镜对的第一反射镜叠层。有源区包括夹在邻近第一反射镜叠层的第一包层区域和第二包层区域之间的有源结构，该有源结构具有至少一个量子阱。 VCSEL还包括与第二包层区域匹配的第二反射镜堆叠晶格并且在Al x Ga 1-x As / Al y Ga 1-y As材料体系中具有镜对。第二反射镜叠层包括蚀刻区域，从而限定环形发射区域，通过该环形发射区域发射由环形波导VCSEL产生的光。

8. 发明授权

US5831960A Integrated vertical cavity surface emitting laser pair for high density data storage and method of fabrication 失效
标题翻译：用于高密度数据存储的集成垂直腔表面发射激光对和制造方法
公开(公告)号：US5831960A
公开(公告)日：1998-11-03
申请号：US895779
申请日：1997-07-17
申请人： Wenbin Jiang , Paul Claisse , Michael S. Lebby
发明人： Wenbin Jiang , Paul Claisse , Michael S. Lebby
IPC分类号： G11B7/125 , H01S5/42 , G11B7/00
CPC分类号： G11B7/127 , H01S5/423 , H01S5/18344
摘要： An integrated vertical cavity surface emitting laser (VCSEL) pair for use in an optical pickup head for high density optical storage applications and a method of fabrication. The VCSEL pair includes a high power VCSEL capable of emitting a power output of at least 15 mW and a low power VCSEL capable of emitting a power output in a range of 1-4 mW. A phase shift mask is integrated with the high power VCSEL to allow for a 180.degree. shift in light emitted therethrough, thereby creating a reduced focal spot size for high density data write applications. The low power VCSEL emission is focused into a Gaussian beam profile for data read applications. The integrated VCSEL pair is utilized in an optical pickup head capable of high density read and write applications for both CDs and DVDs.
摘要翻译：用于高密度光存储应用的光学拾取头中的集成垂直腔面发射激光器（VCSEL）对及其制造方法。 VCSEL对包括能够发射至少15mW的功率输出的高功率VCSEL和能够发射1-4mW范围内的功率输出的低功率VCSEL。相移掩模与高功率VCSEL集成，以允许在其中发射的光的180度偏移，从而为高密度数据写入应用产生减小的焦点尺寸。低功率VCSEL发射被聚焦成用于数据读取应用的高斯波束分布。集成的VCSEL对用于能够对CD和DVD进行高密度读取和写入应用的光学拾取头。

9. 发明申请

US20160299053A1 RAPID SINGLE CELL BASED BIOLOGICAL CELL SORTER 审中-公开
标题翻译：快速单细胞生物细胞分离器
公开(公告)号：US20160299053A1
公开(公告)日：2016-10-13
申请号：US15187660
申请日：2016-06-20
申请人： Wenbin Jiang
发明人： Wenbin Jiang
IPC分类号： G01N15/14 , B01L3/00
CPC分类号： G01N15/1484 , B01L3/502715 , B01L3/502761 , B01L2200/0652 , B01L2300/0654 , B01L2300/0816 , B01L2300/12 , C12M47/04 , G01N15/1434 , G01N2015/0065 , G01N2015/1006 , G01N2015/144 , G01N2015/149
摘要： A disposable rapid cell sorter comprises a microfluidic chip with electrodes and sorts biological cells of interest though a magnetic field and an electric field based on biological cell functional antibody bonded magnetic beads and luminescent labeling.
摘要翻译：一次性快速细胞分选器包括具有电极的微流控芯片，并且通过磁场和基于生物细胞功能性抗体结合的磁珠和发光标记的电场分类感兴趣的生物细胞。

10. 发明申请

US20120142018A1 Rapid Single Cell Based Parallel Biological Cell Sorter 有权
标题翻译：快速单细胞平行生物细胞分选机
公开(公告)号：US20120142018A1
公开(公告)日：2012-06-07
申请号：US13308751
申请日：2011-12-01
申请人： Wenbin Jiang
发明人： Wenbin Jiang
IPC分类号： G01N27/72 , C12N5/071 , C12M1/42
CPC分类号： G01N15/1484 , B01L3/502715 , B01L3/502761 , B01L2200/0652 , B01L2300/0654 , B01L2300/0816 , B01L2300/12 , C12M47/04 , G01N15/1434 , G01N2015/0065 , G01N2015/1006 , G01N2015/144 , G01N2015/149
摘要： A disposable rapid cell sorter comprises of microfluidic chip with electrodes and sorts biological cells of interest through magnetic field and electric field based on biological cell functional antibody bonded magnetic beads and luminescent labeling.
摘要翻译：一次性快速细胞分选机由具有电极的微流体芯片和基于生物细胞功能性抗体结合的磁珠和发光标记的磁场和电场分类感兴趣的生物细胞组成。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式