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1. 发明申请

US20130302996A1 DEPOSITION OF AN AMORPHOUS CARBON LAYER WITH HIGH FILM DENSITY AND HIGH ETCH SELECTIVITY 有权
标题翻译：具有高膜密度和高选择性的非晶碳层沉积
公开(公告)号：US20130302996A1
公开(公告)日：2013-11-14
申请号：US13468776
申请日：2012-05-10
申请人： Patrick REILLY , Shahid SHAIKH , Tersem SUMMAN , Deenesh PADHI , Sanjeev BALUJA , Juan Carlos ROCHA-ALVAREZ , Thomas NOWAK , Bok Hoen KIM , Derek R. WITTY
发明人： Patrick REILLY , Shahid SHAIKH , Tersem SUMMAN , Deenesh PADHI , Sanjeev BALUJA , Juan Carlos ROCHA-ALVAREZ , Thomas NOWAK , Bok Hoen KIM , Derek R. WITTY
IPC分类号： H01L21/02
CPC分类号： H01L21/02527 , C23C16/26 , C23C16/56 , H01L21/02115 , H01L21/02274 , H01L21/02348 , H01L21/02592 , H01L21/0262 , H01L21/31144
摘要： Embodiments described herein relate to a method for processing a substrate. In one embodiment, the method includes introducing a gas mixture comprising a hydrocarbon source and a diluent gas into a deposition chamber located within a processing system, generating a plasma from the gas mixture in the deposition chamber at a temperature between about 200° C. and about 700° C. to form a low-hydrogen content amorphous carbon layer on the substrate, transferring the substrate into a curing chamber located within the processing system without breaking vacuum, and exposing the substrate to UV radiation within the curing chamber at a curing temperature above about 200° C.
摘要翻译：本文所述的实施例涉及一种用于处理衬底的方法。在一个实施方案中，该方法包括将包含烃源和稀释气体的气体混合物引入位于处理系统内的沉积室中，在沉积室中从约200℃至约200℃的温度和约700℃以在基底上形成低氢含量的无定形碳层，将基底转移到位于处理系统内的固化室中，而不破坏真空，并在固化温度下将基底暴露于固化室内的UV辐射高于约200℃

2. 发明申请

US20120080779A1 ULTRA HIGH SELECTIVITY DOPED AMORPHOUS CARBON STRIPPABLE HARDMASK DEVELOPMENT AND INTEGRATION 有权
标题翻译：超高选择性非晶态碳纳米管开发和集成
公开(公告)号：US20120080779A1
公开(公告)日：2012-04-05
申请号：US13249794
申请日：2011-09-30
申请人： Martin Jay SEAMONS , Sudha RATHI , Kwangduk Douglas LEE , Deenesh PADHI , Bok Hoen KIM , Chiu CHAN
发明人： Martin Jay SEAMONS , Sudha RATHI , Kwangduk Douglas LEE , Deenesh PADHI , Bok Hoen KIM , Chiu CHAN
IPC分类号： H01L29/02 , C09D1/00 , H01L21/31
CPC分类号： H01L21/64 , C23C16/0272 , C23C16/26 , H01L21/02115 , H01L21/02274 , H01L21/31144
摘要： Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.
摘要翻译：本发明的实施例一般涉及集成电路的制造，特别涉及在半导体衬底上沉积含硼无定形碳层。在一个实施例中，提供了一种在处理室中处理衬底的方法。该方法包括在处理体积中提供衬底，使含烃气体混合物流入处理体积，通过从含有硼的气体混合物流入处理体积的RF源施加功率产生含烃气体混合物的等离子体，以及在所述等离子体存在下在所述衬底上沉积含硼无定形碳膜，其中所述含硼无定形碳膜含有约30至约60原子百分比的硼。

3. 发明申请

US20120043518A1 VARIABLE RESISTANCE MEMORY ELEMENT AND FABRICATION METHODS 审中-公开
标题翻译：可变电阻记忆元件和制造方法
公开(公告)号：US20120043518A1
公开(公告)日：2012-02-23
申请号：US12859230
申请日：2010-08-18
申请人： Siu F. CHENG , Heung Lak PARK , Deenesh PADHI
发明人： Siu F. CHENG , Heung Lak PARK , Deenesh PADHI
IPC分类号： H01L29/04 , H01L47/00
CPC分类号： H01L45/149 , C23C16/26 , C23C16/505 , H01L45/085 , H01L45/1233 , H01L45/1616
摘要： An electronic device comprises a variable resistance memory element on a substrate. The variable resistance memory element comprises (i) an amorphous carbon layer comprising a hydrogen content of at least about 30 atomic percent, and a maximum leakage current of less than about 1×10−9 amps, and (ii) a pair of electrodes about the amorphous carbon layer. Methods of fabricating this and other devices are also described.
摘要翻译：电子设备包括在基板上的可变电阻存储元件。可变电阻存储元件包括（i）包含至少约30原子％的氢含量和小于约1×10-9安培的最大漏电流的无定形碳层，以及（ii）一对电极无定形碳层。还描述了制造这种和其他装置的方法。

4. 发明申请

US20120208339A1 PASSIVATING GLUE LAYER TO IMPROVE AMORPHOUS CARBON TO METAL ADHESION 有权
标题翻译：钝化玻璃层将非晶态碳改善成金属粘合剂
公开(公告)号：US20120208339A1
公开(公告)日：2012-08-16
申请号：US13456058
申请日：2012-04-25
申请人： Siu F. Cheng , Deenesh PADHI
发明人： Siu F. Cheng , Deenesh PADHI
IPC分类号： H01L21/02
CPC分类号： H01L45/04 , H01L28/20 , H01L45/145
摘要： A method and apparatus is provided for forming a resistive memory device having good adhesion among the components thereof. A first conductive layer is formed on a substrate, and the surface of the first conductive layer is treated to add adhesion promoting materials to the surface. The adhesion promoting materials may form a layer on the surface, or they may incorporate into the surface or merely passivate the surface of the first conductive layer. A variable resistance layer is formed on the treated surface, and a second conductive layer is formed on the variable resistance layer. Adhesion promoting materials may also be included at the interface between the variable resistance layer and the second conductive layer.
摘要翻译：提供了一种用于形成其组件之间具有良好粘附性的电阻式存储器件的方法和装置。在基板上形成第一导电层，并处理第一导电层的表面以向表面添加增粘材料。粘合促进材料可以在表面上形成一层，或者它们可以结合到表面中或仅仅钝化第一导电层的表面。在经处理的表面上形成可变电阻层，在可变电阻层上形成第二导电层。粘合促进材料也可以包括在可变电阻层和第二导电层之间的界面处。

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