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1. 发明申请

US20100093187A1 Method for Depositing Conformal Amorphous Carbon Film by Plasma-Enhanced Chemical Vapor Deposition (PECVD) 有权
标题翻译：通过等离子体增强化学气相沉积（PECVD）沉积保形无定形碳膜的方法
公开(公告)号：US20100093187A1
公开(公告)日：2010-04-15
申请号：US12577455
申请日：2009-10-12
申请人： Kwangduk Douglas Lee , Takashi Morii , Yoichi Suzuki , Sudha Rathi , Martin Jay Seamons , Deenesh Padhi , Bok Hoen Kim , Cynthia Pagdanganan
发明人： Kwangduk Douglas Lee , Takashi Morii , Yoichi Suzuki , Sudha Rathi , Martin Jay Seamons , Deenesh Padhi , Bok Hoen Kim , Cynthia Pagdanganan
IPC分类号： H01L21/312
CPC分类号： H01L21/3146 , C23C16/26 , C23C16/45523 , C23C16/5096 , H01L21/3141
摘要： Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
摘要翻译：提供了在基板上沉积无定形碳层的方法和装置。在一个实施例中，沉积工艺包括将衬底定位在衬底处理室中，将具有大于1:2的碳原子与氢原子比的烃源引入到处理室中，引入等离子体引发气体，所述等离子体引发气体选自氢气，氦气，氩气，氮气及其组合进入处理室，烃源具有等离子体起始气体体积流量比为1：2或更大的体积流量，在处理室中产生等离子体，并形成基底上的共形无定形碳层。

2. 发明申请

US20070207275A1 Enhancement of remote plasma source clean for dielectric films 审中-公开
标题翻译：电介质薄膜远程等离子体源清洁的增强
公开(公告)号：US20070207275A1
公开(公告)日：2007-09-06
申请号：US11508544
申请日：2006-08-23
申请人： Thomas Nowak , Kang Sub Yim , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Vu Ngoc Tran Nguyen , Dennis Singleton , Martin Jay Seamons , Karthik Janakiraman , Ganesh Balasubramanian , Mohamed Ayoub , Wendy H. Yeh , Alexandros T. Demos , Hichem M'Saad
发明人： Thomas Nowak , Kang Sub Yim , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Vu Ngoc Tran Nguyen , Dennis Singleton , Martin Jay Seamons , Karthik Janakiraman , Ganesh Balasubramanian , Mohamed Ayoub , Wendy H. Yeh , Alexandros T. Demos , Hichem M'Saad
IPC分类号： H05H1/24
CPC分类号： C23C16/4405 , B08B7/0035 , H01J37/32357 , H01J37/32862
摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
摘要翻译：提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。反应性物质由含氧气体（例如O 2）和/或含卤素气体如NF 3 N产生。在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

3. 发明申请

US20090093128A1 METHODS FOR HIGH TEMPERATURE DEPOSITION OF AN AMORPHOUS CARBON LAYER 审中-公开
标题翻译：非晶碳层高温沉积方法
公开(公告)号：US20090093128A1
公开(公告)日：2009-04-09
申请号：US11868859
申请日：2007-10-08
申请人： MARTIN JAY SEAMONS , Yoganand N. Saripalli , Kwangduk Douglas Lee , Bok Hoen Kim , Visweswaren Sivaramakrishnan , Wendy H. Yeh , Josephine Ju-Hwei Chang Liu , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
发明人： MARTIN JAY SEAMONS , Yoganand N. Saripalli , Kwangduk Douglas Lee , Bok Hoen Kim , Visweswaren Sivaramakrishnan , Wendy H. Yeh , Josephine Ju-Hwei Chang Liu , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
IPC分类号： H01L21/47
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/3146 , H01L21/76829
摘要： Methods for high temperature deposition an amorphous carbon film with improved step coverage are provided. In one embodiment, a method for of depositing an amorphous carbon film includes providing a substrate in a process chamber, heating the substrate at a temperature greater than 500 degrees Celsius, supplying a gas mixture comprising a hydrocarbon compound and an inert gas into the process chamber containing the heated substrate, and depositing an amorphous carbon film on the heated substrate having a stress of between 100 mega-pascal (MPa) tensile and about 100 mega-pascal (MPa) compressive.
摘要翻译：提供了高温沉积方法，提供了具有改进的台阶覆盖率的无定形碳膜。在一个实施方案中，沉积非晶碳膜的方法包括在处理室中提供衬底，在大于500摄氏度的温度下加热衬底，将包含烃化合物和惰性气体的气体混合物供应到处理室包含加热的基底，以及在具有100兆帕（拉伸）拉伸和约100兆帕斯卡（MPa）压应力之间的应力的加热基底上沉积无定形碳膜。

4. 发明申请

US20080020319A1 Graded ARC for high na and immersion lithography 有权
标题翻译：分级ARC用于高na和浸没式光刻
公开(公告)号：US20080020319A1
公开(公告)日：2008-01-24
申请号：US11488528
申请日：2006-07-18
申请人： Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
发明人： Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
IPC分类号： G03C1/00
CPC分类号： G03F7/091 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.
摘要翻译：提供了使用渐变抗反射涂层形成装置的方法。在基板上形成一个或多个非晶碳层。在一个或多个非晶碳层上形成抗反射涂层（ARC），其中ARC层具有在ARC层的厚度上变化的吸收系数。在ARC层上形成能量敏感的抗蚀剂材料。通过将能量敏感的抗蚀剂材料暴露于图案化的辐射，将图案的图像引入到能量敏感抗蚀剂材料层中。开发了引入能量敏感抗蚀剂材料层的图案的图像。

5. 发明授权

US09299581B2 Methods of dry stripping boron-carbon films 有权
标题翻译：干法汽提硼碳膜的方法
公开(公告)号：US09299581B2
公开(公告)日：2016-03-29
申请号：US13456404
申请日：2012-04-26
申请人： Kwangduk Douglas Lee , Sudha Rathi , Ramprakash Sankarakrishnan , Martin Jay Seamons , Irfan Jamil , Bok Hoen Kim
发明人： Kwangduk Douglas Lee , Sudha Rathi , Ramprakash Sankarakrishnan , Martin Jay Seamons , Irfan Jamil , Bok Hoen Kim
IPC分类号： B08B5/00 , H01L21/311 , H01L21/02
CPC分类号： H01L21/31122 , H01L21/0206 , H01L21/31144
摘要： Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.
摘要翻译：本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。

6. 发明申请

US20120080779A1 ULTRA HIGH SELECTIVITY DOPED AMORPHOUS CARBON STRIPPABLE HARDMASK DEVELOPMENT AND INTEGRATION 有权
标题翻译：超高选择性非晶态碳纳米管开发和集成
公开(公告)号：US20120080779A1
公开(公告)日：2012-04-05
申请号：US13249794
申请日：2011-09-30
申请人： Martin Jay SEAMONS , Sudha RATHI , Kwangduk Douglas LEE , Deenesh PADHI , Bok Hoen KIM , Chiu CHAN
发明人： Martin Jay SEAMONS , Sudha RATHI , Kwangduk Douglas LEE , Deenesh PADHI , Bok Hoen KIM , Chiu CHAN
IPC分类号： H01L29/02 , C09D1/00 , H01L21/31
CPC分类号： H01L21/64 , C23C16/0272 , C23C16/26 , H01L21/02115 , H01L21/02274 , H01L21/31144
摘要： Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.
摘要翻译：本发明的实施例一般涉及集成电路的制造，特别涉及在半导体衬底上沉积含硼无定形碳层。在一个实施例中，提供了一种在处理室中处理衬底的方法。该方法包括在处理体积中提供衬底，使含烃气体混合物流入处理体积，通过从含有硼的气体混合物流入处理体积的RF源施加功率产生含烃气体混合物的等离子体，以及在所述等离子体存在下在所述衬底上沉积含硼无定形碳膜，其中所述含硼无定形碳膜含有约30至约60原子百分比的硼。

7. 发明申请

US20110291243A1 PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO 失效
公开(公告)号：US20110291243A1
公开(公告)日：2011-12-01
申请号：US12790203
申请日：2010-05-28
申请人： Martin Jay Seamons , Kwangduk Douglas Lee , Chiu Chan , Patrick Reilly , Sudha Rathi
发明人： Martin Jay Seamons , Kwangduk Douglas Lee , Chiu Chan , Patrick Reilly , Sudha Rathi
IPC分类号： H01L21/302 , H01L23/52 , G03F7/20 , H01L21/30
CPC分类号： H01L21/02115 , H01L21/02274 , H01L21/0332 , H01L21/0337
摘要： Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material to an extent capable of protecting the first set of interconnect features from subsequent processes while being easily removable when desired, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features is at the same level with the upper surface of the first base material, providing a substantial planar outer surface of the first base material, depositing a first film stack comprising a second base material on the substantial planar outer surface of the first base material, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material, thereby extending a feature depth of the semiconductor device by connecting the second set of interconnect features to the first set of interconnect features. In another embodiment, a method includes providing a base material having a first film stack deposited thereon, wherein the base material is formed over the substrate and having a first set of interconnect features filled with an amorphous carbon material, the first film stack comprising a first amorphous carbon layer deposited on a surface of the base material, a first anti-reflective coating layer deposited on the first amorphous carbon layer, and a first photoresist layer deposited on the first anti-reflective coating layer, and patterning a portion of the first photoresist layer by shifting laterally a projection of a mask on the first photoresist layer relative to the substrate a desired distance, thereby introducing into the first photoresist layer a first feature pattern to be transferred to the underlying base material, wherein the first feature pattern is not aligned with the first set of interconnect features.

8. 发明申请

US20110287633A1 ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM 有权
标题翻译：超高选择性的硬掩膜
公开(公告)号：US20110287633A1
公开(公告)日：2011-11-24
申请号：US12784341
申请日：2010-05-20
申请人： Kwangduk Douglas Lee , Martin Jay Seamons , Sudha Rathi , Chiu Chan , Michael H. Lin
发明人： Kwangduk Douglas Lee , Martin Jay Seamons , Sudha Rathi , Chiu Chan , Michael H. Lin
IPC分类号： H01L21/3105 , H01L21/312
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/31144
摘要： A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.
摘要翻译：在基板处理室中的基板上形成无定形碳层的方法包括将烃源引入到处理室中，将氩单独或与氦，氢，氮及其组合单独或组合地引入到处理室中，其中氩气具有约10:1至约20:1的烃源体积流量比的体积流速，在处理室中以约2托至10托的基本较低的压力产生等离子体，并形成保形无定形碳层。

9. 发明申请

US20100239979A1 GRADED ARC FOR HIGH NA AND IMMERSION LITHOGRAPHY 有权
标题翻译：用于高精度和倾斜平面的分级弧
公开(公告)号：US20100239979A1
公开(公告)日：2010-09-23
申请号：US12797406
申请日：2010-06-09
申请人： Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
发明人： Wendy H. Yeh , Martin J. Seamons , Matthew Spuller , Sum-Yee Betty Tang , Kwangduk Douglas Lee , Sudha Rathi
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/091 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.
摘要翻译：提供了使用渐变抗反射涂层形成装置的方法。在基板上形成一个或多个非晶碳层。在一个或多个非晶碳层上形成抗反射涂层（ARC），其中ARC层具有在ARC层的厚度上变化的吸收系数。在ARC层上形成能量敏感的抗蚀剂材料。通过将能量敏感的抗蚀剂材料暴露于图案化的辐射，将图案的图像引入到能量敏感抗蚀剂材料层中。开发了引入能量敏感抗蚀剂材料层的图案的图像。

10. 发明申请

US20140216498A1 METHODS OF DRY STRIPPING BORON-CARBON FILMS 审中-公开
标题翻译：干法剥离硼砂膜的方法
公开(公告)号：US20140216498A1
公开(公告)日：2014-08-07
申请号：US13760845
申请日：2013-02-06
申请人： Kwangduk Douglas LEE , Sudha RATHI , Ramprakash SANKARAKRISHNAN , Martin Jay SEAMONS , Irfan JAMIL , Bok Hoen KIM
发明人： Kwangduk Douglas LEE , Sudha RATHI , Ramprakash SANKARAKRISHNAN , Martin Jay SEAMONS , Irfan JAMIL , Bok Hoen KIM
IPC分类号： B08B7/00
CPC分类号： H01J37/32853 , B08B7/0035 , G03F7/427 , H01L21/02041 , H01L21/31116
摘要： Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.
摘要翻译：本发明的实施方案一般涉及干燥汽提硼 - 碳膜的方法。在一个实施方案中，使用氢和氧的交替等离子体去除硼 - 碳膜。在另一个实施方案中，使用共流氧和氢等离子体去除含硼碳膜。除了作为上述氧等离子体中的任一种之外，还可以使用一氧化二氮等离子体。在另一个实施方案中，使用由水蒸气产生的等离子体来除去硼 - 碳膜。在除去硼 - 碳膜之前，硼 - 碳去除方法还可以包括任选的聚合物去除方法。聚合物去除方法包括将硼 - 碳膜暴露于NF3以从硼 - 碳膜的表面除去在基板蚀刻工艺期间产生的任何碳基聚合物。

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