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    • 5. 发明授权
    • Light-emitting device
    • 发光装置
    • US09214649B2
    • 2015-12-15
    • US14570015
    • 2014-12-15
    • Panasonic Intellectual Property Management Co., Ltd.
    • Yasuhisa InadaTaku HirasawaManabu Nakata
    • H01L51/50H01L51/52
    • H01L51/5262H01L51/5203H01L51/5218H01L51/5231H01L51/5271
    • A light-emitting device includes: a light-emitting element including a transparent electrode, a reflecting electrode, and an organic layer that includes a light-emitting layer; a transparent multilayer body including a low-refractive-index layer and a high-refractive-index layer, the high-refractive-index layer being provided in contact with the transparent electrode; a first uneven structure at an interface between the low-refractive-index layer and the high-refractive-index layer, the first uneven structure including depressions and projections, a height of each of the projections relative to the depressions being 400 nm or more; and a second uneven structure at an interface between the reflecting electrode and the organic layer, the second uneven structure including depressions and projections, a height of each of the projections relative to the depressions in the second uneven structure being 20 nm or more and 100 nm or less.
    • 发光装置包括:发光元件,其包括透明电极,反射电极和包括发光层的有机层; 包括低折射率层和高折射率层的透明多层体,所述高折射率层设置成与所述透明电极接触; 在低折射率层和高折射率层之间的界面处的第一不平坦结构,包括凹陷和突起的第一不平坦结构,每个凸起相对于凹陷的高度为400nm以上; 以及在反射电极和有机层之间的界面处的第二不平坦结构,所述第二凹凸结构包括凹陷和突起,每个凸起相对于第二凹凸结构中的凹陷的高度为20nm以上且100nm 或更少。