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1. 发明专利

DK1866466T3 Fremgangsmåde til fremstilling af en monokrystallinsk skive med tilnærmelsesvis polygonalt tværsnit 未知
公开(公告)号：DK1866466T3
公开(公告)日：2010-10-25
申请号：DK06724135
申请日：2006-04-04
申请人： PV SILICON FORSCHUNGS UND PROD
发明人： LUEDGE ANKE , MUIZNIEKS ANDRIS , RIEMANN HELGE , ABROSIMOV NIKOLAI
IPC分类号： C30B29/06 , C30B13/30

2. 发明专利

DE502006007373D1 VERFAHREN ZUR HERSTELLUNG EINER EINKRISTALLINEN SI-SCHEIBE MIT ANNÄHERND POLYGONALEM QUERSCHNITT 未知
公开(公告)号：DE502006007373D1
公开(公告)日：2010-08-19
申请号：DE502006007373
申请日：2006-04-04
申请人： PV SILICON FORSCHUNGS UND PROD
发明人： ABROSIMOV NIKOLAI , LUEDGE ANKE , MUIZNIEKS ANDRIS , RIEMANN HELGE
IPC分类号： C30B29/06 , C30B13/30

3. 发明专利

NO20045319L 未知
公开(公告)号：NO20045319L
公开(公告)日：2004-12-03
申请号：NO20045319
申请日：2004-12-03
申请人： PV SILICON FORSCHUNGS UND PROD
发明人： ABROSIMOV NICOLAI V , RIEMANN HELGE
IPC分类号： B22D11/01 , C01B33/02 , B22D11/00 , C30B13/00 , C30B13/20 , C30B15/00 , C30B15/08 , H01L21/208
摘要： The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front. In order to produce crystal rods having a defined diameter and a column-shaped polycrystalline structure using heating means which are technically less complex, while at the same time guaranteeing high crystallization rates and stable phase definition, the means for simultaneously feeding the melt energy and adjusting the crystallization front on the growing crystal rod ( 8 ) is a flat induction coil ( 5 ) which has an opening, said induction coil ( 5 ) being arranged at a distance from the crucible ( 4 ) and/or being vertically moveable in relation to the crystallization front.

4. 发明专利

ES2346789T3 PROCEDIMIENTO PARA LA PRODUCCION DE UN DISCO MONOCRISTALINO DE SI CON UNA SECCION TRANSVERSAL APROXIMADAMENTE POLIGONAL. 未知
公开(公告)号：ES2346789T3
公开(公告)日：2010-10-20
申请号：ES06724135
申请日：2006-04-04
申请人： PV SILICON FORSCHUNGS UND PROD
发明人： ABROSIMOV NIKOLAI , LUDGE ANKE , MUIZNIEKS ANDRIS , RIEMANN HELGE
IPC分类号： C30B29/06 , C30B13/30
摘要： Procedimiento para la producción de un disco monocristalino de Si, con una sección transversal aproximadamente poligonal y con la calidad del material de unos cristales de Si estirados por zonas, en el que en una fase de iniciación, a partir de una gota colgante de masa fundida, con unos medios conocidos, se estira verticalmente hacia abajo por lo menos un cuello delgado, antes de que se reduzca la rotación del cristal hasta llegar a un número de revoluciones comprendido entre 0 y

5. 发明专利

DE102009005837A1 Verfahren und Vorrichtung zur Herstellung von Siliziumdünnstäben 未知
公开(公告)号：DE102009005837A1
公开(公告)日：2010-07-22
申请号：DE102009005837
申请日：2009-01-21
申请人： PV SILICON FORSCHUNGS UND PROD
发明人： RIEMANN HELGE , SCHULZE FRIEDRICH-WILHELM , RENNER MATTHIAS , FISCHER JOERG
IPC分类号： C30B13/00 , C01B33/035 , C30B13/20
摘要： Die Erfindung betrifft ein Verfahren und eine Vorrichtung zur Herstellung von Siliziumdünnstäben, wie sie beim herkömmlichen Siemens-Verfahren für die Siliziumabscheidung verwendet werden. Durch den stark steigenden Bedarf an Silizium für Halbleiter und Solarzellen steigt auch der Bedarf an Siliziumdünnstäben. Das erfindungsgemäße Verfahren entspricht grundsätzlich dem klassischen Pedestal-Verfahren. Erfindungsgemäß weist die verwendete Induktionsspule (1) um die stromumflossene Zentralöffnung (4) herum weitere Ziehöffnungen (5.1, 5.2, 5.3, 5.4) auf. Im Vorratsstab unter der Induktionsspule (1) wird ein ausreichend gleichmäßiges Temperaturprofil erzeugt, dass die Kuppe des Vorratsstabes schmilzt und ein Schmelzensee entsteht (6.1) auf (6). Durch die weiteren Ziehöffnungen in der Induktionsspule kann jeweils ein Siliziumdünnstab (9.1, 9.2, 9.3, 9.4) aus dem Schmelzensee nach oben gezogen werden. Im Gegensatz zum bekannten Stand der Technik wird durch die stromumflossene Zentralöffnung kein Stab nach oben gezogen. Die weiteren zusätzlichen Ziehöffnungen sind vorzugsweise konzentrisch zur Zentralöffnung und mit einem ausreichenden Abstand zum Außenrand des Vorratsstabes (6) angeordnet. Ihr Abstand zueinander ist so gewählt, dass die wachsenden Siliziumdünnstäbe sich gegenseitig thermisch nicht zu stark beeinflussen, damit die einzelnen Siliziumdünnstäbe möglichst gleich wachsen. Je größer der Durchmesser des verwendeten Si-Rohstabes ist, desto größer kann auch der ...

6. 发明专利

DK1509642T3 未知
公开(公告)号：DK1509642T3
公开(公告)日：2007-11-05
申请号：DK03724889
申请日：2003-05-06
申请人： PV SILICON FORSCHUNGS UND PROD
发明人： ABROSIMOV NIKOLAI V , RIEMANN HELGE
IPC分类号： B22D11/00 , C30B15/08 , B22D11/01 , C01B33/02 , C30B13/00 , C30B13/20 , C30B15/00 , H01L21/208
摘要： The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front. In order to produce crystal rods having a defined diameter and a column-shaped polycrystalline structure using heating means which are technically less complex, while at the same time guaranteeing high crystallization rates and stable phase definition, the means for simultaneously feeding the melt energy and adjusting the crystallization front on the growing crystal rod ( 8 ) is a flat induction coil ( 5 ) which has an opening, said induction coil ( 5 ) being arranged at a distance from the crucible ( 4 ) and/or being vertically moveable in relation to the crystallization front.

7. 发明专利

DE10220964B4 未知
公开(公告)号：DE10220964B4
公开(公告)日：2006-11-02
申请号：DE10220964
申请日：2002-05-06
申请人： PV SILICON FORSCHUNGS UND PROD
发明人： ABROSIMOV NIKOLAI V , RIEMANN HELGE
IPC分类号： B22D11/00 , C30B15/08 , B22D11/01 , C01B33/02 , C30B13/00 , C30B13/20 , C30B15/00 , H01L21/208
摘要： The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front. In order to produce crystal rods having a defined diameter and a column-shaped polycrystalline structure using heating means which are technically less complex, while at the same time guaranteeing high crystallization rates and stable phase definition, the means for simultaneously feeding the melt energy and adjusting the crystallization front on the growing crystal rod ( 8 ) is a flat induction coil ( 5 ) which has an opening, said induction coil ( 5 ) being arranged at a distance from the crucible ( 4 ) and/or being vertically moveable in relation to the crystallization front.

8. 发明专利

DE102005016776A1 未知
公开(公告)号：DE102005016776A1
公开(公告)日：2006-10-12
申请号：DE102005016776
申请日：2005-04-06
申请人： PV SILICON FORSCHUNGS UND PROD
发明人： ABROSIMOV NIKOLAI V , LUEDGE ANKE , MUIZNIEKS ANDRIS , RIEMANN HELGE
IPC分类号： C30B13/00 , C30B13/20
摘要： A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.

9. 发明专利

NO20045319A 未知
公开(公告)号：NO20045319A
公开(公告)日：2004-12-03
申请号：NO20045319
申请日：2004-12-03
申请人： PV SILICON FORSCHUNGS UND PROD
发明人： ABROSIMOV NICOLAI V , RIEMANN HELGE
IPC分类号： B22D11/00 , B22D11/01 , C01B33/02 , C30B13/00 , C30B13/20 , C30B15/00 , C30B15/08 , H01L21/208
CPC分类号： C30B13/20 , C30B15/08 , C30B29/06 , Y10T117/10 , Y10T117/1052 , Y10T117/1056

10. 发明专利

DE102005063346B4 Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd rundem polygonalem Querschnitt 未知
公开(公告)号：DE102005063346B4
公开(公告)日：2010-10-28
申请号：DE102005063346
申请日：2005-04-06
申请人： PV SILICON FORSCHUNGS UND PROD
发明人： ABROSIMOV NIKOLAI V , LUEDGE ANKE , MUIZNIEKS ANDRIS , RIEMANN HELGE
IPC分类号： C30B13/00 , C30B13/28

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