专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008123869A2 MILLIMETER-LONG NANOWIRES 审中-公开
公开(公告)号：WO2008123869A2
公开(公告)日：2008-10-16
申请号：PCT/US2007/024222
申请日：2007-11-20
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , PARK, Won, Il , ZHENG, Gengfeng , JIANG, Xiaocheng , TIAN, Bozhi , LIEBER, Charles, M.
发明人： PARK, Won, Il , ZHENG, Gengfeng , JIANG, Xiaocheng , TIAN, Bozhi , LIEBER, Charles, M.
IPC分类号： H01L29/06 , H01L29/16
CPC分类号： H01L29/0665 , B82Y10/00 , C30B25/00 , C30B25/18 , C30B29/06 , C30B29/60 , H01L21/02381 , H01L21/02521 , H01L21/02532 , H01L21/02573 , H01L21/02603 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/16 , H01L29/1602
摘要： The present invention generally relates to wires, including nanowires such as semiconductor nanowires, which may be a single crystal in some cases. In one aspect, the present invention is generally directed to a relatively long semiconductor wire. The semiconductor wire may have a length of at least about 10 micrometers, at least about 100 micrometers, or even at least about 1 mm. In certain cases, the semiconductor wire has an aspect ratio of at least about 50,000. In some embodiments, the semiconductor wire has no more than 1 grain boundary per micrometer, and in certain embodiments, the semiconductor wire is a single crystal. In many instances, the semiconductor wire also has a substantially uniform diameter. Other aspects of the invention are directed to techniques for forming such semiconductor wires, e.g., using chemical vapor deposition, as well as devices including such semiconductor wires. For instance, one embodiment of the invention provides an electronic device having at least 50 transistors on a common nanoscale wire.
摘要翻译：本发明总体上涉及包括诸如半导体纳米线的纳米线的导线，在一些情况下其可以是单晶。在一个方面，本发明总体上涉及较长的半导体线。半导体线可具有至少约10微米，至少约100微米或甚至至少约1mm的长度。在某些情况下，半导体线具有至少约50,000的纵横比。在一些实施例中，半导体线每微米具有不超过1个晶界，并且在某些实施例中，半导体线是单晶。在许多情况下，半导体线也具有基本均匀的直径。本发明的其它方面涉及用于形成这种半导体线的技术，例如使用化学气相沉积以及包括这种半导体线的器件。例如，本发明的一个实施例提供了在公共纳米级线上具有至少50个晶体管的电子器件。

2. 发明申请

WO2008033303A2 BRANCHED NANOSCALE WIRES 审中-公开
标题翻译：分支纳米线
公开(公告)号：WO2008033303A2
公开(公告)日：2008-03-20
申请号：PCT/US2007/019669
申请日：2007-09-11
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , LIEBER, Charles, M. , TIAN, Bozhi , JIANG, Xiaocheng
发明人： LIEBER, Charles, M. , TIAN, Bozhi , JIANG, Xiaocheng
IPC分类号： H01L21/20
CPC分类号： B82Y30/00 , H01L21/02381 , H01L21/02428 , H01L21/02513 , H01L21/02521 , H01L21/02532 , H01L21/02603 , H01L21/02606 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02645
摘要： The present invention generally relates to nanotechnology and, in particular, to branched nanoscale wires. In some cases, the branched nanoscale wires may be produced using vapor-phase and/or solution-phase synthesis. In one set of embodiments, branched nanoscale wires may be grown by depositing nanoparticles onto a nanoscale wire, and segments or "branches" can then be grown from the nanoparticles. The nanoscale wire may be any nanoscale wire, for example, a semiconductor nanoscale wire, a nanoscale wire having a core and a shell, etc. The segments may be of the same, or of different materials, than the nanoscale wire, for example, semiconductor/metal, semiconductor/semiconductor (i.e., having different compositions, for instance, IV-IV, IV-III/V, IV-II/VI, etc.), etc. The junction between the segment and the nanoscale wire, in some cases, is epitaxial. In one embodiment, the nanoparticles are adsorbed onto the nanoscale wire by immobilizing a positively-charged entity, such as polylysine, to the nanoscale wire, and exposing it to the nanoparticles. In another embodiment, nanoparticles are deposited onto a nanoscale wire by etching the nanoscale wire to produce an H-terminated surface, then exposing the surface to a solution comprising a metal ion, which can be reduced by the surface to form nanoparticles. Segments or branches can then be grown from the deposited nanoparticles to form the branched nanoscale wire. Other aspects of the invention include assays, sensors, kits, and/or other devices that include such nanoscale wires, methods of making and/or using such nanoscale wires, or the like.
摘要翻译：本发明一般涉及纳米技术，特别涉及分支纳米尺寸的导线。在一些情况下，可以使用气相和/或溶液相合成制备支化纳米线。在一组实施方案中，可以通过在纳米级线上沉积纳米颗粒来生长分支纳米线，然后可以从纳米颗粒生长片段或“分支”。纳米线可以是任何纳米尺寸的线，例如半导体纳米线，具有芯和壳的纳米线。等等。这些线可以是与纳米级线相同或不同的材料，例如，半导体/金属，半导体/半导体（即，具有不同组成，例如IV-IV，IV-III / V，IV-II / VI等）等。该段和纳米线之间的连接处于有些情况是外延。在一个实施方案中，通过将带正电荷的实体（例如聚赖氨酸）固定到纳米线上并将其暴露于纳米颗粒，将纳米颗粒吸附到纳米级线上。在另一个实施方案中，通过蚀刻纳米尺度线以产生H终止的表面，然后将表面暴露于包含金属离子的溶液，将纳米级纳米线沉积到纳米级线上，该溶液可以被表面还原以形成纳米颗粒。然后可以从沉积的纳米颗粒生长段或分枝以形成分支的纳米级线。本发明的其它方面包括测定，传感器，试剂盒和/或包括这种纳米线的其它装置，制造和/或使用这种纳米尺度线的方法等。

3. 发明申请

WO2012170630A3 NANOSCALE WIRES, NANOSCALE WIRE FET DEVICES, AND NANOTUBE-ELECTRONIC HYBRID DEVICES FOR SENSING AND OTHER APPLICATIONS 审中-公开
公开(公告)号：WO2012170630A3
公开(公告)日：2012-12-13
申请号：PCT/US2012/041253
申请日：2012-06-07
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE , LIEBER, Charles, M. , DUAN, Xiaojie , GAO, Ruixuan , XIE, Ping , JIANG, Xiaocheng
发明人： LIEBER, Charles, M. , DUAN, Xiaojie , GAO, Ruixuan , XIE, Ping , JIANG, Xiaocheng
IPC分类号： H01L29/78 , H01L21/336
摘要： The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel. In some embodiments, the rest of the transistor channel may be coated, e.g., so that the electrical properties of the transistor channel reflect the electrical behavior of the environment that the fluidic channel is in communication with. Other aspects of the invention are generally directed to methods of making such sensors, methods of using such sensors, kits involving such sensors, or the like.

4. 发明申请

WO2016161246A1 NANOSCALE WIRES WITH EXTERNAL LAYERS FOR SENSORS AND OTHER APPLICATIONS 审中-公开
标题翻译：带传感器和其他应用的外部层的纳米线
公开(公告)号：WO2016161246A1
公开(公告)日：2016-10-06
申请号：PCT/US2016/025493
申请日：2016-04-01
申请人： PRESIDENT AND FELLOWS OF HARVARD COLLEGE
发明人： LIEBER, Charles, M. , GAO, Ning , ZHOU, Wei , JIANG, Xiaocheng , GAO, Teng , YANG, Xiao
IPC分类号： G01N27/414 , G01N27/327
CPC分类号： G01N27/4146 , B82Y15/00 , G01N27/4145 , G01N33/48721 , G01N33/551 , G01N33/573 , G01N2333/96433 , Y10S977/734 , Y10S977/746 , Y10S977/762 , Y10S977/796 , Y10S977/809 , Y10S977/814 , Y10S977/938 , Y10S977/958
摘要： The present invention generally relates to nanoscale wires and other nanomaterials, including nanoscale wires used as sensors, including nanoscale wires comprising semiconductor nanowires, carbon nanotubes, graphene, or metal oxide nanomaterials. Certain aspects of the invention are generally directed to polymer coating on nanoscale wires that can be used to increase sensitivity to analytes, for example, in physiologically relevant conditions. For example, the polymer may have an average pore size comparable in size to an analyte. Accordingly, in some cases, the nanoscale wires can be used as sensors, even in ionic solutions, e.g., under physiologically relevant conditions. Other aspects of the invention include assays, sensors, kits, and/or other devices that include such nanoscale wires, methods of making and/or using such nanoscale wires, or the like.
摘要翻译：本发明一般涉及纳米线和其他纳米材料，包括用作传感器的纳米线，包括纳米线，包括半导体纳米线，碳纳米管，石墨烯或金属氧化物纳米材料。本发明的某些方面通常涉及可用于增加对分析物的敏感性的纳米尺度线上的聚合物涂层，例如在生理相关条件下。例如，聚合物可以具有与分析物尺寸相当的平均孔径。因此，在一些情况下，即使在离子溶液中，例如在生理学相关条件下，纳米线也可用作传感器。本发明的其它方面包括测定，传感器，试剂盒和/或包括这种纳米线的其它装置，制造和/或使用这种纳米尺度线的方法等。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式