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    • 1. 发明申请
    • ELECTRICALLY-CONDUCTIVE AND SEMI-CONDUCTIVE FILMS
    • 导电和半导体膜
    • WO2007021741A2
    • 2007-02-22
    • PCT/US2006/031028
    • 2006-08-09
    • PRESIDENT AND FELLOWS OF HARVARD COLLEGECAO, TingbingXU, QiaobingWINKLEMAN, AdamWHITESIDES, George
    • CAO, TingbingXU, QiaobingWINKLEMAN, AdamWHITESIDES, George
    • G03F7/00
    • C23C14/20B82Y30/00C23C14/0005C23C14/588G01N33/48707H01L21/76838
    • Methods and apparatuses for generating electrically-conductive and/or semi-conductive films, and more specifically, methods and apparatuses for generating conductive and/or semi-conductive films having nanoscale features are provided. In one embodiment, an electrically-conductive or semi-conductive film (e.g., a gold layer of less than 50 nanometer thickness) is provided on a substrate (e.g., a poly(dimethylsiloxane) (PDMS) stamp). The substrate may optionally include patterns or features having raised and recessed portions. A first portion of the film may be removed from the substrate, e.g., by methods such as physically contacting the first portion of the film with a surface to which the first portion preferentially adheres. This process can leave a second portion of the film remaining on the substrate. In some embodiments, the second portion includes at least one region having a dimension substantially parallel to a portion of the substrate i.e., of less than 50 nanometers. The second portion of the film may be used to establish electrical communication with an electrical contact. Advantageously, electrically-conductive and/or semi-conductive films having nanoscale features can be fabricated over large areas (e.g., areas greater than 1 cm 2 ) in a single step.
    • 提供用于产生导电和/或半导电膜的方法和装置,更具体地,提供了用于产生具有纳米尺度特征的导电和/或半导电膜的方法和装置。 在一个实施例中,在衬底(例如,聚(二甲基硅氧烷)(PDMS)印模)上提供导电或半导电膜(例如,小于50纳米厚度的金层)。 衬底可以可选地包括具有凸起和凹陷部分的图案或特征。 膜的第一部分可以例如通过诸如使膜的第一部分与第一部分优先粘附的表面物理接触的方法从基材上除去。 该过程可以使膜的第二部分残留在基底上。 在一些实施例中,第二部分包括具有基本上平行于基底的一部分的尺寸的至少一个区域,即小于50纳米。 胶片的第二部分可用于与电触点建立电连通。 有利地,可以在单个步骤中在大面积(例如,大于1cm 2的区域)上制造具有纳米尺度特征的导电和/或半导电膜。
    • 2. 发明申请
    • PATTERNING OF IONOTROPIC POLYMERS
    • 离子聚合物的构图
    • WO2008051432A2
    • 2008-05-02
    • PCT/US2007/022219
    • 2007-10-18
    • PRESIDENT AND FELLOWS OF HARVARD COLLEGELAHAV, MichalWINKLEMAN, AdamNAROVLYANSKY, MaxPEREZ-CASTILLEJOS, RaquelWEISS, Emily, A.RODRIGUEZ, Leonard, N. J.WHITESIDES, George, M.
    • LAHAV, MichalWINKLEMAN, AdamNAROVLYANSKY, MaxPEREZ-CASTILLEJOS, RaquelWEISS, Emily, A.RODRIGUEZ, Leonard, N. J.WHITESIDES, George, M.
    • G03F7/00
    • G03F7/0002B82Y10/00B82Y40/00Y10T428/24479
    • In one aspect, methods of patterning of thin films of an ionotropic polymer (e.g., poly(acrylic acid)) are provided. These processes can create micron or sub-micron-scale patterns of ionotropic polymers such as cation crosslinked poly(acrylic acid) (CCL- PAA). In one embodiment, patterning may be performed within microfluidic channels by flowing a solution of crosslinking agent (e.g., metal cations such as Ag + , Ca 2+ , Pd 2+ , Al 3+ , La 3+ , and Ti 4+ ) that can crosslink a portion of an ionotropic polymer in contact with the solution. In another embodiment, methods of patterning ionotropic polymers involve photolithography. Upon patterning a positive photoresist (e.g., diazonaphthoquinone- novolac resin) on a film of CCL-PAA, the exposed regions of CCL-PAA can be etched by an aqueous solution. Advantageously, the patterned, crosslinked polymer may also serve as both a reactant and a matrix for subsequent chemistry. For example, in some embodiments, the initial crosslinking cation can be exchanged for a second cation that could not be patterned photolithographically. Patterned films of CCL-PAA can also be used to host and template the reduction of metallic cations to metallic nanoparticles, and to fabricate porous, low-k dielectric substrates.
    • 一方面,提供了离子型聚合物(例如聚(丙烯酸))的薄膜图案化方法。 这些方法可以产生离子型聚合物如阳离子交联的聚(丙烯酸)(CCL-PAA)的微米级或亚微米级的图案。 在一个实施方案中,可以通过使交联剂溶液(例如,金属阳离子如Ag 2+,Ca 2+,Pd 2+, 2+,3+,3+,3+,和3++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++ 与溶液接触。 在另一个实施方案中,构图离子型聚合物的方法涉及光刻。 在CCL-PAA膜上形成正性光致抗蚀剂(例如重氮萘酚 - 酚醛清漆树脂)之后,CCL-PAA的曝光区域可以通过水溶液进行蚀刻。 有利地,图案化的交联聚合物也可以用作反应物和用于后续化学的基质。 例如,在一些实施方案中,可以将初始交联阳离子交换为不能光刻图案化的第二阳离子。 CCL-PAA的图案化膜也可用于将金属阳离子还原为金属纳米颗粒,并制备多孔,低k电介质基底。