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1. 发明申请

WO2018055371A1 TRANSISTOR AND ITS METHOD OF MANUFACTURE 审中-公开
标题翻译：晶体管及其制造方法
公开(公告)号：WO2018055371A1
公开(公告)日：2018-03-29
申请号：PCT/GB2017/052806
申请日：2017-09-20
申请人： PRAGMATIC PRINTING LTD.
发明人： PRICE, Richard , GREEN, Nathaniel , DAVIES, Neil , THORNDYKE, Adrian , ALKHALIL, Feras
IPC分类号： H01L29/423 , H01L29/49 , H01L29/786
摘要： A transistor is disclosed, comprising: a layer of semiconductor material comprising a first portion, a second portion, and a third portion connecting the first portion to the second portion and providing a semiconductive channel between the first portion and the second portion; a conductive first terminal covering and in electrical contact with said first portion of the layer of semiconductor material; a conductive second terminal covering and in electrical contact with said second portion of the layer of semiconductor material; a conductive gate terminal comprising a first overlapping portion covering at least part of the first terminal, and a channel portion covering the third portion of the layer of semiconductor material; and a layer of a first dielectric material, having a first dielectric constant, arranged between the first overlapping portion and the first terminal, and between the channel portion of the gate terminal and the third portion of the layer of semiconductor material. The transistor further comprises a layer of a second dielectric material having a second dielectric constant, the second dielectric constant being lower than the first dielectric constant, the layer of second dielectric material being arranged between at least part of the first overlapping portion and the first terminal, whereby at least part of the first overlapping portion of the gate terminal is separated from the first terminal by the layer of first dielectric material and the layer of second dielectric material.
摘要翻译：公开了一种晶体管，包括：半导体材料层，其包括第一部分，第二部分和将所述第一部分连接至所述第二部分的第三部分，并且在所述第一部分与所述第二部分之间提供半导电沟道，和第二部分; 导电的第一端子，覆盖所述半导体材料层的所述第一部分并与所述第一部分电接触; 导电的第二端子，覆盖并与所述半导体材料层的所述第二部分电接触; 导电栅极端子，包括覆盖所述第一端子的至少一部分的第一重叠部分和覆盖所述半导体材料层的第三部分的沟道部分; 以及布置在第一重叠部分和第一端子之间以及栅极端子的沟道部分和半导体材料层的第三部分之间的具有第一介电常数的第一介电材料层。所述晶体管还包括具有第二介电常数的第二介电材料层，所述第二介电常数低于所述第一介电常数，所述第二介电材料层布置在所述第一重叠部分的至少一部分与所述第一端子由此，栅极端子的第一重叠部分的至少一部分通过第一介电材料层和第二介电材料层与第一端子分离。

2. 发明申请

WO2019116020A1 SCHOTTKY DIODE 审中-公开
公开(公告)号：WO2019116020A1
公开(公告)日：2019-06-20
申请号：PCT/GB2018/053588
申请日：2018-12-11
申请人： PRAGMATIC PRINTING LTD
发明人： ALKHALIL, Feras , PRICE, Richard , COBB, Brian
IPC分类号： H01L29/872 , H01L21/329 , H01L29/417 , H01L29/47 , H01L51/05 , H01L29/06 , H01L29/20 , H01L29/16 , H01L29/24 , H01L29/22
摘要： A Schottky diode comprises:a first electrode;a second electrode; and a body of semiconductive material connected to the first electrode at a first interface and connected to the second electrode at a second interface,wherein the first interface comprises a first planar region lying in a first plane and the first electrode has a first projection onto the first plane in a first direction normal to the first plane, the second interface comprises a second planar region lying in a second plane and the second electrode has a second projection onto the first plane in said first direction, at least a portion of the second projection lies outside the first projection, said second planar region is offset from the first planar region in said first direction, and one of the first interface and the second interface provides a Schottky contact.

3. 发明申请

WO2018178657A1 ELECTRONIC STRUCTURES AND THEIR METHODS OF MANUFACTURE 审中-公开
公开(公告)号：WO2018178657A1
公开(公告)日：2018-10-04
申请号：PCT/GB2018/050805
申请日：2018-03-27
申请人： PRAGMATIC PRINTING LTD
发明人： PRICE, Richard , RAMSDALE, Catherine , COBB, Brian Hardy , ALKHALIL, Feras
IPC分类号： H01L27/06 , H01L21/822
摘要： A structure is disclosed, comprising: a first field effect transistor, FET, comprising a first source terminal, a first drain terminal, a first layer or body of semiconductive material arranged to provide a first semiconductive channel connecting the first source terminal to the first drain terminal, and a gate terminal arranged with respect to the first semiconductive channel such that a conductivity of the first semiconductive channel may be controlled by application of a voltage to the gate terminal; and a second FET comprising a second source terminal, a second drain terminal, a second layer or body of semiconductive material arranged to provide a second semiconductive channel connecting the second source terminal to the second drain terminal, and the gate terminal, the second conductive channel being arranged with respect to the gate terminal such that a conductivity of the second channel may be controlled by application of a voltage to the gate terminal. Methods of manufacturing such structures are also disclosed.

4. 发明申请

WO2021032977A1 ELECTRONIC CIRCUITS AND CIRCUIT ELEMENTS 审中-公开
公开(公告)号：WO2021032977A1
公开(公告)日：2021-02-25
申请号：PCT/GB2020/051986
申请日：2020-08-19
申请人： PRAGMATIC PRINTING LTD.
发明人： PRICE, Richard , RAMSDALE, Catherine , DOWNS, Peter Fergus , ALKHALIL, Feras , CHANDRAMOHAN, Abhishek
IPC分类号： H01L27/12 , H01L29/786
摘要： A method of manufacturing an electronic circuit comprising a first device and at least a second device is disclosed. The first device comprises a first terminal, a second terminal, and a first body of semiconductive material providing a semiconductive path between the first and second terminals, and the second device comprises a third terminal, a fourth terminal, and a second body of material providing a resistive or semiconductive current path between the third terminal and the fourth terminal. The method comprises: forming the first body; and forming the second body, wherein the first body comprises a first quantity of a metal oxide and the second body comprises a second quantity of said metal oxide. Corresponding electronic circuits are disclosed.

5. 发明公开

EP3724925A1 SCHOTTKY DIODE 审中-公开
公开(公告)号：EP3724925A1
公开(公告)日：2020-10-21
申请号：EP18819363.5
申请日：2018-12-11
申请人： Pragmatic Printing Ltd
发明人： ALKHALIL, Feras , PRICE, Richard , COBB, Brian
IPC分类号： H01L29/872 , H01L21/329 , H01L29/417 , H01L29/47 , H01L51/05 , H01L29/06 , H01L29/20 , H01L29/16 , H01L29/24 , H01L29/22

6. 发明公开

EP4018477A1 ELECTRONIC CIRCUITS AND CIRCUIT ELEMENTS 审中-实审
公开(公告)号：EP4018477A1
公开(公告)日：2022-06-29
申请号：EP20764719.9
申请日：2020-08-19
申请人： PragmatIC Printing Ltd.
发明人： PRICE, Richard , RAMSDALE, Catherine , DOWNS, Peter Fergus , ALKHALIL, Feras , CHANDRAMOHAN, Abhishek
IPC分类号： H01L27/12 , H01L29/786

7. 发明公开

EP3602627A1 ELECTRONIC STRUCTURES AND THEIR METHODS OF MANUFACTURE 审中-公开
公开(公告)号：EP3602627A1
公开(公告)日：2020-02-05
申请号：EP18715115.4
申请日：2018-03-27
申请人： Pragmatic Printing Ltd
发明人： PRICE, Richard , RAMSDALE, Catherine , COBB, Brian Hardy , ALKHALIL, Feras
IPC分类号： H01L27/06 , H01L21/822

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