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    • 1. 发明申请
    • AND GATES AND CLOCK DIVIDERS
    • WO2019220123A1
    • 2019-11-21
    • PCT/GB2019/051346
    • 2019-05-16
    • PRAGMATIC PRINTING LTD
    • DE OLIVEIRA, Joao
    • H03K3/012H03K19/094H03K19/0944
    • An AND gate comprises:a first input;a second input;an output; and a plurality of field effect transistors, FETs, each having a respective first terminal, a respective second terminal, and a respective gate terminal to which a voltage may be applied to control a conductivity of a respective channel between the respective first terminal and the respective second terminal. The plurality of FETs comprises: a first FET having its first terminal directly connected to the first input, its second terminal directly connected to the output, and its gate terminal directly connected to the second input; a second FET having its first terminal directly connected to the first input, its second terminal directly connected to the output, and its gate terminal directly connected to the output; and a third FET having its first terminal directly connected to the second input, its second terminal directly connected to the output, and its gate terminal directly connected to the output. Also disclosed is a clock divider stage for receiving a first clock signal oscillating at a first frequency and a second clock signal, the second clock signal being an inversion of the first clock signal, and generating a first output clock signal oscillating at half of the first frequency.
    • 2. 发明申请
    • TRANSISTOR AND ITS METHOD OF MANUFACTURE
    • 晶体管及其制造方法
    • WO2018055371A1
    • 2018-03-29
    • PCT/GB2017/052806
    • 2017-09-20
    • PRAGMATIC PRINTING LTD.
    • PRICE, RichardGREEN, NathanielDAVIES, NeilTHORNDYKE, AdrianALKHALIL, Feras
    • H01L29/423H01L29/49H01L29/786
    • A transistor is disclosed, comprising: a layer of semiconductor material comprising a first portion, a second portion, and a third portion connecting the first portion to the second portion and providing a semiconductive channel between the first portion and the second portion; a conductive first terminal covering and in electrical contact with said first portion of the layer of semiconductor material; a conductive second terminal covering and in electrical contact with said second portion of the layer of semiconductor material; a conductive gate terminal comprising a first overlapping portion covering at least part of the first terminal, and a channel portion covering the third portion of the layer of semiconductor material; and a layer of a first dielectric material, having a first dielectric constant, arranged between the first overlapping portion and the first terminal, and between the channel portion of the gate terminal and the third portion of the layer of semiconductor material. The transistor further comprises a layer of a second dielectric material having a second dielectric constant, the second dielectric constant being lower than the first dielectric constant, the layer of second dielectric material being arranged between at least part of the first overlapping portion and the first terminal, whereby at least part of the first overlapping portion of the gate terminal is separated from the first terminal by the layer of first dielectric material and the layer of second dielectric material.
    • 公开了一种晶体管,包括:半导体材料层,其包括第一部分,第二部分和将所述第一部分连接至所述第二部分的第三部分,并且在所述第一部分与所述第二部分之间提供半导电沟道, 和第二部分; 导电的第一端子,覆盖所述半导体材料层的所述第一部分并与所述第一部分电接触; 导电的第二端子,覆盖并与所述半导体材料层的所述第二部分电接触; 导电栅极端子,包括覆盖所述第一端子的至少一部分的第一重叠部分和覆盖所述半导体材料层的第三部分的沟道部分; 以及布置在第一重叠部分和第一端子之间以及栅极端子的沟道部分和半导体材料层的第三部分之间的具有第一介电常数的第一介电材料层。 所述晶体管还包括具有第二介电常数的第二介电材料层,所述第二介电常数低于所述第一介电常数,所述第二介电材料层布置在所述第一重叠部分的至少一部分与所述第一端子 由此,栅极端子的第一重叠部分的至少一部分通过第一介电材料层和第二介电材料层与第一端子分离。
    • 10. 发明申请
    • ELECTRONIC DEVICES
    • 电子设备
    • WO2013121195A1
    • 2013-08-22
    • PCT/GB2013/050337
    • 2013-02-13
    • PRAGMATIC PRINTING LTD
    • GREGORY, John JamesPRICE, Richard David
    • H01L29/66H01L27/12
    • H01L29/66477G03F7/2022H01L27/1266H01L29/66757H01L29/66765H01L29/66969
    • A method of manufacturing an electronic device comprising a first terminal (e.g. a source terminal), a second terminal (e.g. a drain terminal), a semiconductor channel connecting the first and second terminals and a gate terminal to which a potential may be applied to control a conductivity of the channel. The method comprises a first exposure of a photoresist from above the substrate using a mask and a second exposure from below the substrate, wherein in the second exposure the first and second terminals shield a part of the photoresist from exposure. An intermediate step reduces the solubility of the photoresist exposed in the first exposure. A window is formed in the photoresist at the location which was shielded by the mask, but exposed to radiation from below. Semiconductor material, dielectric material and conductor material are deposited inside the window to form a semiconductor channel, gate dielectric, and a gate terminal, respectively.
    • 一种制造电子器件的方法,包括第一端子(例如源极端子),第二端子(例如漏极端子),连接第一和第二端子的半导体沟道和可以施加电位的栅极端子以控制 通道的电导率。 该方法包括使用掩模从衬底上方首先曝光光致抗蚀剂,并从衬底下方第二曝光,其中在第二曝光中,第一和第二端子屏蔽光刻胶的一部分不被曝光。 中间步骤降低了在第一次曝光中暴露的光致抗蚀剂的溶解度。 在被掩模遮蔽的位置处的光致抗蚀剂中形成窗口,但是暴露于下方的辐射。 半导体材料,电介质材料和导体材料沉积在窗口内,分别形成半导体沟道,栅极电介质和栅极端子。