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1. 发明申请

US20050133736A1 Ion implantation apparatus and partical collection structure thereof 审中-公开
标题翻译：离子注入装置及其部件收集结构
公开(公告)号：US20050133736A1
公开(公告)日：2005-06-23
申请号：US10736757
申请日：2003-12-17
申请人： Otto Chen , Yao-Chia Yeh , Chun-Feng Shen , Chung-Tung Chen
发明人： Otto Chen , Yao-Chia Yeh , Chun-Feng Shen , Chung-Tung Chen
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J2237/022 , H01J2237/31703 , H01J2237/31705
摘要： An ion implantation apparatus. An ion implantation chamber has a movable work piece support holding one or more work pieces and a connecting housing between the ion implantation chamber and an accelerator thereof. A plurality of collectors with saw-toothed protrusions are mounted on the interior surface of the ion implantation chamber and the housing, and grounded to fix contaminant particles moving within the ion implantation apparatus.
摘要翻译：离子注入装置。离子注入室具有保持一个或多个工件的可移动工件支撑件和离子注入室及其加速器之间的连接壳体。具有锯齿突起的多个收集器安装在离子注入室和壳体的内表面上，并接地以固定在离子注入装置内移动的污染颗粒。

2. 发明授权

US07518129B2 Preventing dosage drift with duplicate dose integrators 有权
标题翻译：用重复剂量积分器预防剂量漂移
公开(公告)号：US07518129B2
公开(公告)日：2009-04-14
申请号：US11416874
申请日：2006-05-03
申请人： Jih-Hwa Wang , Otto Chen , Fang-Chi Chien , Tung-Li Lee , Pu-Fang Chen
发明人： Jih-Hwa Wang , Otto Chen , Fang-Chi Chien , Tung-Li Lee , Pu-Fang Chen
IPC分类号： G21K5/00
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/30433 , H01J2237/30455 , H01J2237/31703
摘要： A method for identifying a drifted dose integrator in an implantation system and an implantation system are provided. The implantation system includes a first dose integrator and a second dose integrator. The first dose integrator includes a first input configured to receive a first current generated from charges carried by implanted ions in a wafer, and a first output configured to output a first accumulated dosage value. The second dose integrator includes a second dose integrator including a second input configured to receive a second current generated from the charges carried by the implanted ions in the wafer, and a second output configured to output a second accumulated dosage value. The implantation system further includes a processing unit comparing the first accumulated dosage value and the second accumulated dosage value to detect a drift in one of the first and the second dose integrators.
摘要翻译：提供了一种用于在植入系统和植入系统中识别漂移剂量积分器的方法。植入系统包括第一剂量积分器和第二剂量积分器。第一剂量积分器包括被配置为接收由晶片中的注入离子携带的电荷产生的第一电流的第一输入和被配置为输出第一累积剂量值的第一输出。所述第二剂量积分器包括第二剂量积分器，所述第二剂量积分器包括被配置为接收从由所述晶片中的所述注入离子携带的电荷产生的第二电流的第二输入，以及被配置为输出第二累积剂量值的第二输出。植入系统还包括处理单元，比较第一累积剂量值和第二累积剂量值，以检测第一和第二剂量积分器之一中的漂移。

3. 发明申请

US20070257210A1 Preventing dosage drift with duplicate dose integrators 有权
标题翻译：用重复剂量积分器预防剂量漂移
公开(公告)号：US20070257210A1
公开(公告)日：2007-11-08
申请号：US11416874
申请日：2006-05-03
申请人： Jih-Hwa Wang , Otto Chen , Fang-Chi Chien , Tung-Li Lee , Pu-Fang Chen
发明人： Jih-Hwa Wang , Otto Chen , Fang-Chi Chien , Tung-Li Lee , Pu-Fang Chen
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/304 , H01J2237/30433 , H01J2237/30455 , H01J2237/31703
摘要： A method for identifying a drifted dose integrator in an implantation system and an implantation system are provided. The implantation system includes a first dose integrator and a second dose integrator. The first dose integrator includes a first input configured to receive a first current generated from charges carried by implanted ions in a wafer, and a first output configured to output a first accumulated dosage value. The second dose integrator includes a second dose integrator including a second input configured to receive a second current generated from the charges carried by the implanted ions in the wafer, and a second output configured to output a second accumulated dosage value. The implantation system further includes a processing unit comparing the first accumulated dosage value and the second accumulated dosage value to detect a drift in one of the first and the second dose integrators.
摘要翻译：提供了一种用于在植入系统和植入系统中识别漂移剂量积分器的方法。植入系统包括第一剂量积分器和第二剂量积分器。第一剂量积分器包括被配置为接收由晶片中的注入离子携带的电荷产生的第一电流的第一输入和被配置为输出第一累积剂量值的第一输出。所述第二剂量积分器包括第二剂量积分器，所述第二剂量积分器包括被配置为接收从由所述晶片中的所述注入离子携带的电荷产生的第二电流的第二输入，以及被配置为输出第二累积剂量值的第二输出。植入系统还包括处理单元，比较第一累积剂量值和第二累积剂量值，以检测第一和第二剂量积分器之一中的漂移。

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