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    • 2. 发明授权
    • Semiconductor integrated circuit device and its manufacturing method
    • 半导体集成电路器件及其制造方法
    • US06429521B1
    • 2002-08-06
    • US09531177
    • 2000-03-21
    • Osamu WadaRyo HagaTomoaki YabeShinji Miyano
    • Osamu WadaRyo HagaTomoaki YabeShinji Miyano
    • H01L2348
    • H01L23/528H01L27/118H01L2924/0002Y10S257/903H01L2924/00
    • On a semiconductor substrate, there are formed a first macro cell having wiring layers of three layers each formed of a metal wiring layer (for example, an aluminum wiring) and a second macro cell having wiring layers of three layers each formed of a metal wiring layer similar to the first macro cell. The first macro cell is formed to have a wiring structure of three wiring layers though the originally necessary number of metal wiring layers is two. The metal wiring layer of each layer on the first macro cell is formed of the same material as the metal wiring layer of the corresponding each layer on the second macro cell. Moreover, the metal wiring layer of each layer is formed to have the same film thickness. In order to connect the first and second macro cells to each other, a macro interconnection wiring is formed to be included in the third wiring layer (uppermost wiring layer).
    • 在半导体基板上,形成有由金属布线层(例如铝布线)形成的具有三层布线层的第一宏观单元和具有由金属布线形成的三层布线层的第二宏观单元 层与第一个宏单元类似。 第一宏单元形成为具有三个布线层的布线结构,尽管最初所需数量的金属布线层是两个。 第一宏单元上的各层的金属布线层由与第二宏单元上的各层的金属布线层相同的材料形成。 此外,各层的金属布线层形成为具有相同的膜厚度。 为了将第一和第二宏单元彼此连接,形成宏布线布置在第三布线层(最上布线层)中。
    • 3. 发明授权
    • Memory-embedded semiconductor integrated circuit device and method for testing same
    • 内存式半导体集成电路器件及其测试方法
    • US06275428B1
    • 2001-08-14
    • US09598209
    • 2000-06-21
    • Ryo FukudaOsamu WadaShinji Miyano
    • Ryo FukudaOsamu WadaShinji Miyano
    • G11C700
    • G11C29/14G11C29/48G11C2207/104
    • There is provided a memory-embedded semiconductor integrated circuit device capable of being tested in a shorter test time. The memory-embedded semiconductor integrated circuit device includes: a logic part provided on a semiconductor substrate; a memory macro provided on the semiconductor substrate to be consolidated with the logic part; a test input terminal for inputting a test input signal; a test circuit including a test signal generator for generating an output switching signal and a test signal, which serves to carry out a test operation of the memory macro, on the basis of the test input signal, and a switching circuit for selectively outputting one of an output of the memory macro, which has been test-operated by the test signal, and the test input signal in accordance with the output switching signal; and a test output terminal for receiving an output of the switching circuit to output the output of the switching circuit to the outside.
    • 提供了一种能够在较短测试时间内测试的内存嵌入式半导体集成电路器件。 存储器嵌入式半导体集成电路器件包括:设置在半导体衬底上的逻辑部分; 提供在半导体衬底上以与逻辑部分合并的存储器宏; 用于输入测试输入信号的测试输入端; 测试电路,包括用于产生输出切换信号的测试信号发生器和用于基于测试输入信号执行存储器宏的测试操作的测试信号;以及切换电路,用于选择性地输出 已经由测试信号测试的存储器宏的输出和根据输出切换信号的测试输入信号; 以及测试输出端子,用于接收开关电路的输出,以将开关电路的输出输出到外部。
    • 4. 发明授权
    • Progressive-power spectacle lens design method
    • 渐进式眼镜镜片设计方法
    • US08833938B2
    • 2014-09-16
    • US13230655
    • 2011-09-12
    • Osamu WadaTadashi Kaga
    • Osamu WadaTadashi Kaga
    • G02C7/02G02C7/06
    • G02C7/065G02C7/024G02C7/027G02C7/061G02C2202/08
    • A progressive-power spectacle lens design method, the progressive-power spectacle lens including a distance portion, a near portion, and a progressive portion provided between the distance portion and the near portion, the method comprising: decreasing a distance along a principal meridian from a fitting point to a progression start point and increasing a length of a progressive corridor defined by the progression start point and a progression end point when addition power is large, whereas increasing the distance along the principal meridian from the fitting point to the progression start point and decreasing the length of the progressive corridor when the addition power is small, wherein the distance from the fitting point to the progression end point is fixed irrespective of the addition power.
    • 渐进式眼镜透镜设计方法,包括设置在距离部分和近部分之间的距离部分,近部分和渐进部分的渐进屈光力眼镜透镜,所述方法包括:沿着主子午线距离 一个加速起点的拟合点,并且增加由加速开始点定义的渐进走廊的长度和加法功率大时的进展终点,而将沿着主子午线的距离从拟合点增加到加速起始点 并且当相加功率较小时减小渐进走廊的长度,其中从装配点到进位终点的距离是固定的,而与加法功率无关。
    • 9. 发明授权
    • Semiconductor device in which capacitance of a MOS capacitor is complemented with the capacitance of a wiring capacitor
    • MOS电容器的电容与布线电容器的电容互补的半导体器件
    • US07557400B2
    • 2009-07-07
    • US11670605
    • 2007-02-02
    • Osamu WadaHiroaki NakanoHiroshi ItoToshimasa NamekawaAtsushi Nakayama
    • Osamu WadaHiroaki NakanoHiroshi ItoToshimasa NamekawaAtsushi Nakayama
    • H01L27/108H01L29/00
    • H01L29/94H01L23/5223H01L27/0222H01L2924/0002H02M3/073H01L2924/00
    • A semiconductor device has a MOS capacitor in which a drain region and a source region of a MOS structure are commonly connected, and a capacitance is formed between the commonly connected drain region/source region and a gate electrode of the MOS structure; and a wiring capacitor which has a first comb-shaped wiring that is formed on said MOS capacitor through an interlayer insulating film, is connected to the gate electrode of said MOS capacitor, and has projecting portions projecting like comb teeth and a second comb-shaped wiring that is formed on said MOS capacitor through the interlayer insulating film, is arranged across an inter-line insulating film from the first comb-shaped wiring, is connected to the drain region and source region, and has projecting portions projecting like comb teeth, wherein the projecting portions of the second comb-shaped wiring are arranged alternately with the projecting portions of the first comb-shaped wiring and arranged perpendicularly to a channel direction connecting the drain region and source region of said MOS capacitor.
    • 半导体器件具有其中共同连接漏极区域和MOS结构的源极区域的MOS电容器,并且在共同连接的漏极区域/源极区域和MOS结构的栅极电极之间形成电容; 以及具有通过层间绝缘膜形成在所述MOS电容器上的第一梳状布线的布线电容器连接到所述MOS电容器的栅电极,并且具有突出部分,如梳齿形状突出,第二梳状 通过层间绝缘膜在所述MOS电容器上形成的布线跨越与第一梳状布线的线间绝缘膜布置,连接到漏区和源极区,并且具有突出部分如梳齿突出, 其中,所述第二梳状布线的突出部分与所述第一梳状布线的突出部分交替布置,并且垂直于连接所述MOS电容器的漏极区域和源极区域的沟道方向布置。