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    • 4. 发明授权
    • Radiation detection apparatus and radiation imaging system
    • 辐射检测仪和放射成像系统
    • US08653463B2
    • 2014-02-18
    • US13110132
    • 2011-05-18
    • Satoru SawadaMasato InoueNoriaki OguriShinichi TakedaMasayoshi AkiyamaTaiki Takei
    • Satoru SawadaMasato InoueNoriaki OguriShinichi TakedaMasayoshi AkiyamaTaiki Takei
    • G01T1/20H01L27/00
    • A61B6/4208A61B6/563G01T1/2018H01L27/14663H01L31/0203H01L31/115
    • A radiation detection apparatus comprising semiconductor substrates each having a first surface on which a photoelectric conversion portion is formed and a second surface opposite to the first surface; a scintillator layer, placed over the first surfaces of the semiconductor substrates, for converting radiation into light; and an elastic member, placed between a base and the second surfaces, for supporting the second surfaces of the semiconductor substrates such that the first surfaces of the semiconductor substrates are flush with each other is provided. In measurement of the elastic member as a single body, an amount of stretch of a cubic specimen in a direction parallel to the first surface when being compressed in a direction perpendicular to the first surface is smaller than an amount of stretch of the specimen in the direction perpendicular to the first surface when being compressed in the direction parallel to the first surface.
    • 一种辐射检测装置,包括各自具有形成有光电转换部的第一表面和与该第一表面相对的第二表面的半导体衬底; 闪烁体层,放置在半导体衬底的第一表面上,用于将辐射转换成光; 以及放置在基座和第二表面之间的弹性构件,用于支撑半导体衬底的第二表面,使得半导体衬底的第一表面彼此齐平。 在作为单体的弹性构件的测量中,当在与第一表面垂直的方向上被压缩时,在与第一表面平行的方向上的立方体样本的拉伸量小于在第一表面垂直的方向上的样本的拉伸量 当在平行于第一表面的方向上被压缩时垂直于第一表面的方向。
    • 10. 发明授权
    • Electron source and image display apparatus
    • 电子源和图像显示装置
    • US07944137B2
    • 2011-05-17
    • US12552840
    • 2009-09-02
    • Shingo EguchiYasushi ShimizuNoriaki Oguri
    • Shingo EguchiYasushi ShimizuNoriaki Oguri
    • H01J1/62
    • H01J1/316H01J31/127H01J2201/3165H01J2329/0489
    • There is provided an electron source according to the present invention, having a plurality of electron-emitting devices wherein each of the electron-emitting devices has a pair of electrodes, and a plurality of conductive films having respective electron emitting portions, provided between the pair of electrodes so as to be electrically connected to the pair of electrodes, the electron source including: a short-circuit suppressing film which is positioned between the plurality of conductive films and is provided on the electron-emitting device so as to be electrically connected to the pair of electrodes, and mainly contains tungsten (W) and germanium (Ge) nitride, wherein a ratio of the number of tungsten atoms to the number of tungsten and germanium atoms is 0.24 or more in the short-circuit suppressing film, surface resistivity of the short-circuit suppressing film is not less than 1×1010 Ω/square and not more than 1×1013 Ω/square.
    • 提供了根据本发明的电子源,其具有多个电子发射器件,其中每个电子发射器件具有一对电极,以及设置在该对之间的具有各自的电子发射部分的多个导电膜 的电极,以与所述一对电极电连接,所述电子源包括:短路抑制膜,其位于所述多个导电膜之间,并且设置在所述电子发射器件上以电连接到 一对电极,主要包含钨(W)和锗(Ge)氮化物,其中钨原子数与钨和锗原子数之比在短路抑制膜中为0.24以上,表面电阻率 的短路抑制膜不小于1×10 10Ω·OHgr·/平方并且不大于1×10 13Ω·平方。