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1. 发明授权

US4451410A Process for preparing condensed polyalkoxyphosphazene 失效
标题翻译：缩合聚烷氧基磷腈的制备方法
公开(公告)号：US4451410A
公开(公告)日：1984-05-29
申请号：US413686
申请日：1982-09-01
申请人： Osamu Shibuta , Tetuo Hasegawa , Jun Ogawa
发明人： Osamu Shibuta , Tetuo Hasegawa , Jun Ogawa
IPC分类号： C07F9/02 , C07F9/24 , C07F9/6581 , C07F9/6593 , C08G79/02 , C07F9/40
CPC分类号： C08G79/025
摘要： A process for preparing a condensed polyalkoxyphosphazene by reacting a halophosphazene oligomer with an alcohol in the presence of an alkali metal carbonate to produce a condensed partially alkoxy-substituted phosphazene, removing water produced in the reaction from the reaction mixture, and reacting the condensed partially alkoxy-substituted phosphazene with an alkali metal alkoxide. The condensed polyalkoxyphosphazene having desired average molecular weight and viscosity and an excellent stability can be easily prepared in a high yield in a low cost.
摘要翻译：一种通过在碱金属碳酸盐存在下使卤代膦腈低聚物与醇反应来制备缩合的聚烷氧基磷腈的方法，以产生缩合的部分烷氧基取代的磷腈，除去反应混合物中产生的水，并使缩合的部分烷氧基 - 取代的磷腈与碱金属醇盐。具有期望的平均分子量和粘度以及优异的稳定性的缩合的聚烷氧基磷腈可以容易地以低成本高产率制备。

2. 发明授权

US07969871B2 Communication control apparatus, communication control method, recording medium storing communication control program 有权
标题翻译：通信控制装置，通信控制方法，存储通信控制程序的记录介质
公开(公告)号：US07969871B2
公开(公告)日：2011-06-28
申请号：US12351485
申请日：2009-01-09
申请人： Jun Ogawa
发明人： Jun Ogawa
IPC分类号： H04J1/16
CPC分类号： H04L12/1886 , H04L49/50
摘要： A communication control apparatus has a setting unit for setting a receiving filter for discarding a broadcast frame received continuously not less than a predetermined threshold during a predetermined N number of time slots.The apparatus has a storage unit for canceling the set receiving filter when receiving the broadcast frame less than the threshold at N+1st time slot after the continuous reception at the N times, and storing the cancellation of the receiving filter. The apparatus has a control unit for not discarding the broadcast frame when the broadcast frame not less than the threshold is received at N+2nd time slot after the N+1st time slot and the cancellation of the receiving frame is stored.
摘要翻译：通信控制装置具有设定单元，用于在预定N个时隙期间设置用于废弃连续不间断接收的广播帧的接收滤波器。该设备具有一个存储单元，用于当在N次连续接收之后的N + 1个时隙接收小于阈值的广播帧时，消除设置的接收滤波器，并存储接收滤波器的取消。当在N + 1时隙之后的N + 2时隙接收到不小于阈值的广播帧并且存储接收帧的消除时，该装置具有用于不丢弃广播帧的控制单元。

3. 发明授权

US07611995B2 Method for removing silicon oxide film and processing apparatus 有权
标题翻译：去除氧化硅膜的方法和处理装置
公开(公告)号：US07611995B2
公开(公告)日：2009-11-03
申请号：US10552262
申请日：2004-04-20
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要： A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH3 gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3 gas.
摘要翻译：二氧化硅膜去除方法能够在比室温高的温度下除去二氧化硅膜，例如天然氧化物膜或化学氧化物膜。在可以抽真空的处理容器18中去除在工件上形成的二氧化硅膜的二氧化硅膜去除方法使用含有HF气体和NH 3气体的混合气体来除去二氧化硅膜。通过使用含有HF气体和NH 3气体的混合气体，能够有效地从工件表面除去二氧化硅膜。

4. 发明授权

US07462571B2 Film formation method and apparatus for semiconductor process for forming a silicon nitride film 有权
标题翻译：用于形成氮化硅膜的半导体工艺的成膜方法和装置
公开(公告)号：US07462571B2
公开(公告)日：2008-12-09
申请号：US11188736
申请日：2005-07-26
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Chaeho Kim , Jun Ogawa
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Chaeho Kim , Jun Ogawa
IPC分类号： H01L21/31
CPC分类号： C23C16/45531 , C23C16/30 , C23C16/345 , C23C16/45525 , C23C16/45546 , C23C16/45578 , C23C16/507
摘要： An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.
摘要翻译：在目标衬底上通过CVD形成杂质掺杂的氮化硅或氧氮化物膜，在选择性地供给含有硅烷族气体的第一工艺气体，含有氮化或氮氧化气体的第二工艺气体的工艺领域中，含有掺杂气体的第三工艺气体。该方法交替地包括第一至第四步骤。第一步向现场供应第一和第三工艺气体。第二步停止向现场供应第一至第三工艺气体。第三步骤在停止向场施加第一和第三处理气体的同时停止向现场供应第二处理气体，并且包括通过激励机构激励第二处理气体的激发周期。第四步停止向现场供应第一至第三处理气体。

5. 发明申请

US20080297202A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND INFORMATION PROCESSING SYSTEM 失效
标题翻译：半导体集成电路和信息处理系统
公开(公告)号：US20080297202A1
公开(公告)日：2008-12-04
申请号：US12129179
申请日：2008-05-29
申请人： Toshio TAKITA , Jun Ogawa , Yoshihiro Tamura
发明人： Toshio TAKITA , Jun Ogawa , Yoshihiro Tamura
IPC分类号： H03D13/00
CPC分类号： H03L7/08 , H03K5/19
摘要： In a semiconductor integrated circuit, a counter counts the number of high-speed clock signals that have been generated in a predetermined number of clock cycles of a low-speed clock signal. In synchronization with the low-speed clock signal, the semiconductor integrated circuit compares the counter value and a predetermined value, and judges whether the frequency of the high-speed clock signal has reaches a predetermined frequency. Since variations in the frequency become smaller as the oscillation of a high-speed oscillator stabilizes, the semiconductor integrated circuit detects that the oscillation is stable when the semiconductor integrated circuit has judged affirmatively a plurality of times.
摘要翻译：在半导体集成电路中，计数器对在低速时钟信号的预定数量的时钟周期中产生的高速时钟信号的数量进行计数。与低速时钟信号同步，半导体集成电路将计数器值和预定值进行比较，判断高速时钟信号的频率是否达到预定频率。由于随着高速振荡器的振荡稳定，频率的变化变小，当半导体集成电路多次判断时，半导体集成电路检测到振荡稳定。

6. 发明申请

US20080269329A1 Process for Production of Microbial Fat/Oil Containing Discretional Amount of Diacylglycerol and Said Fat/Oil 审中-公开
标题翻译：含有二酰基甘油和所述脂肪/油的离散量的微生物脂肪/油的生产方法
公开(公告)号：US20080269329A1
公开(公告)日：2008-10-30
申请号：US11660859
申请日：2005-08-19
申请人： Shigeaki Fujikawa , Eiji Sakuradani , Jun Ogawa , Sakayu Shimizu
发明人： Shigeaki Fujikawa , Eiji Sakuradani , Jun Ogawa , Sakayu Shimizu
IPC分类号： C12P7/64 , A61K31/201 , C07C57/00 , A61K31/202
CPC分类号： A61K8/375 , A23D9/013 , A23K20/158 , A23L33/115 , A23L33/12 , A23V2002/00 , A61K8/67 , A61K8/922 , A61K8/99 , A61Q19/00 , C11B1/10 , C11B3/12 , C12P7/6472 , A23V2250/182 , A23V2250/1882
摘要： In a process for the production of diacylglycerol-containing fat/oil where the ratio of diacylglycerol to the total neutral lipid is more than 20% by weight and a polyunsaturated fatty acid is a constituting fatty acid, a process which is characterized in that a microbe being able to produce said fat/oil is incubated and, if desired, said fat/oil is collected.
摘要翻译：在制备含二酰基甘油的脂肪/油的方法中，其中二酰基甘油与总中性脂质的比例大于20重量％，多不饱和脂肪酸是构成脂肪酸的方法，其特征在于将微生物能够产生所述脂肪/油的温育，如果需要，收集所述脂肪/油。

7. 发明申请

US20080010299A1 FILE MANAGEMENT SYSTEM 审中-公开
标题翻译：文件管理系统
公开(公告)号：US20080010299A1
公开(公告)日：2008-01-10
申请号：US11851516
申请日：2007-09-07
申请人： Jun Ogawa
发明人： Jun Ogawa
IPC分类号： G06F17/30
CPC分类号： G06F16/1834
摘要： A file management system characterized in that at least one of the nodes included in a peer-to-peer network is provided with a database storing updateable files and a distribution history list preparation unit for preparing a distribution history list storing distribution destination nodes of files stored in the database, a file management method, a file management program, and a file management program storage medium are provided.
摘要翻译：一种文件管理系统，其特征在于，包括在对等网络中的节点中的至少一个被提供有存储可更新文件的数据库和分发历史列表准备单元，用于准备存储存储的文件的分发目的地节点的分发历史列表在数据库中，提供文件管理方法，文件管理程序和文件管理程序存储介质。

8. 发明申请

US20070189422A1 Radio demodulation circuit 审中-公开
标题翻译：无线电解调电路
公开(公告)号：US20070189422A1
公开(公告)日：2007-08-16
申请号：US11707098
申请日：2007-02-16
申请人： Jun Ogawa , Yoshishige Yoshikawa
发明人： Jun Ogawa , Yoshishige Yoshikawa
IPC分类号： H04L27/14
CPC分类号： H04L27/1563 , H04L25/062 , H04L27/0014
摘要： The radio demodulation circuit of the present invention demodulates a multi-valued FSK signal with a digital demodulator, performs threshold value judgment on the demodulated output of the digital demodulator with a data judging device, and keeps the threshold value obtained by the data judging device in a threshold value holding device.
摘要翻译：本发明的无线电解调电路用数字解调器解调多值FSK信号，利用数据判断装置对数字解调器的解调输出执行阈值判断，并将数据判断装置获得的阈值保持在阈值保持装置。

9. 发明申请

US20070032047A1 Method and apparatus for forming silicon-containing insulating film 有权
标题翻译：用于形成含硅绝缘膜的方法和装置
公开(公告)号：US20070032047A1
公开(公告)日：2007-02-08
申请号：US11496436
申请日：2006-08-01
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Pao-Hwa Chou , Jun Ogawa , Chaeho Kim , Kohei Fukushima , Toshiki Takahashi , Jun Sato
IPC分类号： C23C16/00 , G06F19/00 , H01L21/20
CPC分类号： C23C16/4412 , C23C16/345 , C23C16/452 , C23C16/45527 , C23C16/45546 , C23C16/45578 , H01L21/0217 , H01L21/0228 , H01L21/3141 , H01L21/3185
摘要： A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a purge gas, a first process gas containing a silane family gas, and a second process gas containing a gas selected from the group consisting of nitriding, oxynitriding, and oxidizing gases. This method alternately includes first to fourth steps. The first, second, third, and fourth steps perform supply of the first process gas, purge gas, second process gas, and purge gas, respectively, while stopping supply of the other two gases. The process field is continuously vacuum-exhausted over the first to fourth steps through an exhaust passage provided with an opening degree adjustment valve. An opening degree of the valve in the first step is set to be 5 to 95% of that used in the second and fourth steps.
摘要翻译：通过CVD在目标基板上形成含硅绝缘膜，在选择性地供给吹扫气体的工艺领域中，含有硅烷族气体的第一工艺气体和含有选自下组的气体的第二工艺气体由氮化，氮氧化和氧化气体组成。该方法交替地包括第一至第四步骤。第一，第二，第三和第四步骤分别在停止供应其他两种气体的同时分别供应第一处理气体，吹扫气体，第二处理气体和吹扫气体。通过设置有开度调节阀的排气通道，在第一至第四步骤中连续抽真空排气。第一步骤中的阀的开度设定为第二和第四步骤中使用的阀门的开启度的5至95％。

10. 发明申请

US20060213539A1 Method for cleaning thin-film forming apparatus 审中-公开
标题翻译：薄膜形成装置的清洗方法
公开(公告)号：US20060213539A1
公开(公告)日：2006-09-28
申请号：US10549851
申请日：2004-03-25
申请人： Kazuhide Hasebe , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
发明人： Kazuhide Hasebe , Mitsuhiro Okada , Takashi Chiba , Jun Ogawa
IPC分类号： B08B9/00 , H05H1/00
CPC分类号： C23C16/4408 , C23C16/4404
摘要： This invention is a cleaning method of a film-forming unit that forms a thin film on an object to be processed by supplying a process gas into a reaction chamber containing the object to be processed, the method comprising a purging step of purging an inside of the reaction chamber by supplying into the reaction chamber a nitrogen-including gas that includes nitrogen and that is capable of being activated. The purging step has a step of nitriding a surface of a member in the reaction chamber by activating the nitrogen-including gas.
摘要翻译：本发明是一种成膜单元的清洗方法，其通过在含有待处理物体的反应室中供给处理气体而在被处理物上形成薄膜，该方法包括：清洗步骤，反应室通过向反应室供应包含氮气并且能够活化的含氮气体。清洗步骤具有通过活化含氮气体来使反应室中的构件的表面氮化的步骤。

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