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1. 发明专利

JP2004289149A Forming method for at least one region or at least one mesa structure or ridge structure electrically pumped in layer or in layer sequence 有权
标题翻译：至少一个地区或至少一个MESA结构或RIDGE结构的形成方法电层或层层序列
公开(公告)号：JP2004289149A
公开(公告)日：2004-10-14
申请号：JP2004074906
申请日：2004-03-16
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人： HOES CHRISTINE , WEIMAR ANDREAS , LEBER ANDREAS , LELL ALFRED , FISCHER HELMUT , HAERLE VOLKER
IPC分类号： H01L33/00 , H01S5/20 , H01S5/22 , H01S5/323
CPC分类号： H01L33/005 , H01S5/021 , H01S5/2081 , H01S5/22 , H01S5/2214 , H01S5/32341 , Y10S438/951
摘要： PROBLEM TO BE SOLVED: To provide a forming method which is self-adjustable and forms a structure width especially of ≤2 μm technically and simply in the forming method for at least one mesa structure or ridge structure, or at least one region electrically pumped in a layer or in a layer sequence.
SOLUTION: A mesa size or a ridge size is decided by structuring by mounting a mask layer on a sacrificial layer attached on the layer or on the layer sequence. The mesa structure or the ridge structure is formed in the layer or in the layer sequence by partially removing the sacrificial layer and the layer or the layer sequence. A sacrificial layer whose width is narrower compared with a layer remained on the sacrificial layer is left by selectively remove a part of the sacrificial layer from a side face of the exposed sacrificial layer. A coating is attached to an edge portion of the formed structure. The sacrificial layer is removed by fully coating the side face of the residual sacrificial layer by a coating material. Layers remained on the sacrificial layer are peeled off.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种自调节的成形方法，在至少一个台面结构或脊结构的成形方法中技术上和简单地形成特别是≤2μm的结构宽度，或至少一个区域以层或层序顺序电泵浦。解决方案：通过在附着在层或层序列上的牺牲层上安装掩模层来构造台面尺寸或脊尺寸。通过部分去除牺牲层和层或层序列，在层或层序中形成台面结构或脊结构。通过从暴露的牺牲层的侧面选择性地去除牺牲层的一部分，留下了与残留在牺牲层上的层相比宽度窄的牺牲层。涂层附着到所形成的结构的边缘部分。通过涂覆材料完全涂覆残留牺牲层的侧面来去除牺牲层。残留在牺牲层上的层被剥离。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

DE102011012262A1 Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements 未知
公开(公告)号：DE102011012262A1
公开(公告)日：2012-08-30
申请号：DE102011012262
申请日：2011-02-24
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： FISCHER HELMUT , PLOESL ANDREAS DR
IPC分类号： H01L33/40 , H01L31/0224 , H01S5/024
摘要： Es wird ein optoelektronisches Halbleiterbauelement mit einer optoelektronischen Halbleiterschichtenfolge (2) auf einem Metallträgerelement (3) angegeben, das als erste Komponente Silber und als zweite Komponente ein Material aufweist, das einen geringeren thermischen Ausdehnungskoeffizienten als Silber aufweist. Weiterhin wird ein Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements angegeben.

3. 发明专利

DE102008046854A1 Machining surfaces of substrates, which have first and second surface, comprises treating first surface of the substrate with etching medium, so that part of the first surface is removed, and applying leveling material on the first surface 未知
公开(公告)号：DE102008046854A1
公开(公告)日：2010-03-18
申请号：DE102008046854
申请日：2008-09-12
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： EISSLER DIETER , FISCHER HELMUT
IPC分类号： C30B33/10 , C30B33/00 , H01L21/306 , H01L33/00
摘要： The process comprises providing a M mX n-substrate (1) with first and second surfaces, where M is aluminum and/or gallium, X is oxygen and/or nitrogen and m and n are numbers of 1-3, treating the first surface of the substrate with an etching medium, so that a part of the first surface of the substrate is removed, applying a leveling material on the first surface of the substrate, where the leveling material possesses chemical or mechanical ablation rate that corresponds to the substrate, and then chemically or mechanically treating the modified first surface. The process comprises providing a M mX n-substrate (1) with first and second surfaces, where M is aluminum and/or gallium, X is oxygen and/or nitrogen and m and n are numbers of 1-3, treating the first surface of the substrate with an etching medium, so that a part of the first surface of the substrate is removed, applying a leveling material on the first surface of the substrate, where the leveling material possesses chemical or mechanical ablation rate that corresponds to the substrate, and then chemically or mechanically treating the modified first surface, so that the leveling material is completely removed and simultaneously the part of the first surface of the substrate is removed. The surface areas of the first surface are removed and have a defective crystal structure. The etching medium acts on the substrate at 200[deg] C. The effect of the etching medium is ended such that the etching medium is separated from the substrate and/or is diluted by a solvent and/or a mixture of the etching medium and substrate is cooled. The second surface of the substrate is partially provided with a protective layer and/or a part of the first surface is provided with the protective layer. The protective layer lies in the form of parallel strips. The first surface is provided with a sacrificial layer, which is removed in the treated step, where the sacrificial layer is obtained by changing the crystal structure of the surface of the substrate. Independent claims are included for: (1) M mX n-substrate for defect-free semiconductor device; (2) a semiconductor device; (3) a method for producing a semiconductor device; and (4) a radiation-emitting device such as LED.

4. 发明专利

DE102007043877A1 未知
公开(公告)号：DE102007043877A1
公开(公告)日：2009-01-08
申请号：DE102007043877
申请日：2007-09-14
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： FISCHER HELMUT , EISSLER DIETER , HEINDL ALEXANDER
IPC分类号： H01L33/00 , H01L33/22 , H01L33/38 , H01L33/44
摘要： A method of producing optoelectronic components is indicated, in which a plurality of semiconductor bodies, each with a semiconductor layer sequence, are provided. In addition, a component carrier assembly with a plurality of connection pads is provided. The semiconductor bodies are positioned relative to the component carrier assembly. An electrically conductive connection is produced between the connection pads and the associated semiconductor bodies and the semiconductor bodies are attached to the component carrier assembly. The optoelectronic components are finished in that one component carrier (30) is formed from the component carrier assembly, to which the semiconductor bodies are attached, for each optoelectronic component.

5. 发明专利

DE59708575D1 未知
公开(公告)号：DE59708575D1
公开(公告)日：2002-11-28
申请号：DE59708575
申请日：1997-08-13
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： FISCHER HELMUT , NIRSCHL ERNST , WEGLEITER WALTER
IPC分类号： H01L31/02 , H01L31/0236 , H01L33/02 , H01L33/00
摘要： A light-emitting and/or light-receiving semiconductor body is produced with one or more semiconductor layers composed of GaAsxP1-x, where 0

6. 发明专利

DE102007043902A1 Method for isolating semiconductor components with metallization of compound, involves separating portions of metallization according to partition into semiconductor components by residual portion of photo resist layer 未知
公开(公告)号：DE102007043902A1
公开(公告)日：2009-03-19
申请号：DE102007043902
申请日：2007-09-14
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： HERMANN SIEGFRIED , BAUR JOHANNES , FISCHER HELMUT , PLAINE GLENN-YVES
IPC分类号： H01L21/78 , H01L33/00 , H01L33/38
摘要： The method involves carrying out mask exposure of a photoresist layer (4). Portions of the layer within areas between trenches (3) are removed for surmounting a residual portion of the photoresist layer to the trenches. A metallization is fabricated from an upper side of a semiconductor layer (20) on a substrate (1). The metallization is formed thinly so that residual portion lies freely on top and portions of metallization are separated according to the partition into semiconductor components by residual portion, which is removed. The semiconductor layer is a gallium nitride.

7. 发明专利

DE10312214B4 未知
公开(公告)号：DE10312214B4
公开(公告)日：2008-11-20
申请号：DE10312214
申请日：2003-03-19
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： WEIMAR ANDREAS , LEBER ANDREAS , HOES CHRISTINE , HAERLE VOLKER , LELL ALFRED , FISCHER HELMUT
IPC分类号： H01S5/22 , H01L33/00 , H01S5/20 , H01S5/323
摘要： Process for preparation of a mesa- or bridge structure in a layer or layer series (LLS) in which their sides are coated by the steps: (a) application of a sacrificial layer (SL) to the LLS; (b) application and structuring of a mask layer onto the SL; (c) partial removal of the SP and the LLS, especially by anisotropic etching; (d) selective removal of part of the SL layer from the sides; (e) application of a coating to the sides of the structures obtained. An independent claim is included for a process for preparation of a Ridge-Waveguide-Laser diode chip.

8. 发明专利

DE102012103394A1 Verfahren zum Herstellen eines optoelektronischen Halbleiterchips und derart hergestellter optoelektronischer Halbleiterchip 未知
公开(公告)号：DE102012103394A1
公开(公告)日：2013-10-24
申请号：DE102012103394
申请日：2012-04-18
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： WELZEL MARTIN , FISCHER HELMUT
IPC分类号： H01L33/24
摘要： Es wird ein Herstellungsverfahren angegeben, bei dem ein Aufwachssubstrat (1) aus Silizium bereitgestellt wird, das eine Aufwachsfläche (1a) aufweist. Die Aufwachsfläche (1a) wird mittels eines Ätzverfahrens strukturiert, bei dem eine Base und eine oberflächenaktive Substanz verwendet werden. Auf die strukturierte Aufwachsfläche (1a) wird eine aktive Halbleiterschichtenfolge (4) epitaktisch aufgewachsen. Weiter wird ein derart hergestellter Halbleiterchip (10) angegeben.

9. 发明专利

DE102010045390A1 Optoelektronisches Halbleiterbauteil und Verfahren zur Herstellung eines optoelektronisches Halbleiterbauteils 未知
公开(公告)号：DE102010045390A1
公开(公告)日：2012-03-15
申请号：DE102010045390
申请日：2010-09-15
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： HERMANN SIEGFRIED , FISCHER HELMUT
IPC分类号： H01L33/62
摘要： Es wird optoelektronisches Halbleiterbauteil angegeben, mit – einem substratlosen optoelektronischen Halbleiterchip (1), der an einer Oberseite eine erste Hauptfläche (1a) und an einer Unterseite eine zweite Hauptfläche (1b) aufweist, und – einem metallischen Träger (2), der an der Unterseite des optoelektronischen Halbleiterchips (1) angeordnet ist, wobei, – der metallische Träger (2) den optoelektronischen Halbleiterchip (1) in zumindest einer lateralen Richtung (1) überragt und – der metallische Träger (3) galvanisch oder stromlos an der zweiten Hauptfläche (1b) des optoelektronischen Halbleiterchips (1) abgeschieden ist.

10. 发明专利

DE102008038725A1 未知
公开(公告)号：DE102008038725A1
公开(公告)日：2010-02-18
申请号：DE102008038725
申请日：2008-08-12
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： WEIMAR ANDREAS , FISCHER HELMUT , ALBRECHT TONY , KASPRZAK-ZABLOCKA ANNA
IPC分类号： H01L33/00 , H01L23/18
摘要： An optoelectronic semiconductor chip is disclosed with a carrier (3), a reflecting layer (1) which contains a metal tending toward migration, wherein the reflective layer (1) is arranged on the carrier (3), a semiconductor element (2) which is arranged on the side of the reflective layer (1) facing away from the carrier (3) and the reflective layer (1) protrudes from one side surface (1a) of the reflective layer (1), and a migration barrier (4) which covers the side surface (1a) of the reflective layer (1), wherein the migration barrier (4) contains a metal.

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