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1. 发明专利

JP2011049600A Photoelectric element and manufacturing method of photoelectric element 有权
标题翻译：光电元件的光电元件和制造方法
公开(公告)号：JP2011049600A
公开(公告)日：2011-03-10
申请号：JP2010270229
申请日：2010-12-03
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人： WIRTH RALPH , BRUNNER HERBERT , ILLEK STEFAN , EISSLER DIETER
IPC分类号： H01L33/02 , H01L31/0224 , H01L31/10 , H01L33/38
CPC分类号： H01L31/022408 , H01L31/022416 , H01L33/0079 , H01L33/0095 , H01L33/382 , H01L2224/16225
摘要： PROBLEM TO BE SOLVED: To provide a photoelectric element, a device having a number of the photoelectric elements which can be easily manufactured at a low cost, and an easy manufacturing method of the photoelectric element. SOLUTION: A photoelectric element 1 comprises an active zone and a semiconductor functional region 2 having a main extension direction in a lateral direction. The semiconductor functional region has at least one hole passing through the active zone, and a connection conductor material is disposed in a region of the hole. The connection conductor material is electrically insulated from the active zone at least in a partial region of the hole. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种光电元件，具有可以容易地以低成本制造的多个光电元件的装置和光电元件的容易的制造方法。解决方案：光电元件1包括有源区和在横向上具有主延伸方向的半导体功能区2。半导体功能区域具有通过有源区域的至少一个孔，并且连接导体材料设置在孔的区域中。连接导体材料至少在孔的部分区域中与活性区电绝缘。版权所有（C）2011，JPO＆INPIT

2. 发明专利

DE102007053849A1 未知
公开(公告)号：DE102007053849A1
公开(公告)日：2009-04-02
申请号：DE102007053849
申请日：2007-11-12
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： EISSLER DIETER
IPC分类号： H01L23/482 , H01L25/075 , H01L33/00
摘要： An arrangement includes an optoelectronic component with two contacts; at least one further component part; at least one contact arranged between the optoelectronic component and the further component part; and at least one web arranged between the optoelectronic component and the further component part.

3. 发明专利

DE102007019776A1 未知
公开(公告)号：DE102007019776A1
公开(公告)日：2008-10-30
申请号：DE102007019776
申请日：2007-04-26
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： ILLEK STEFAN , PLOESL ANDREAS , HEINDL ALEXANDER , RODE PATRICK , EISSLER DIETER
IPC分类号： H01L33/20 , H01L33/38 , H01L33/46

4. 发明申请

WO2009140947A3 OPTOELECTRONIC MODULE 审中-公开
标题翻译：光电模块
公开(公告)号：WO2009140947A3
公开(公告)日：2010-02-25
申请号：PCT/DE2009000679
申请日：2009-05-13
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , EISSLER DIETER , HERRMANN SIEGFRIED
发明人： EISSLER DIETER , HERRMANN SIEGFRIED
IPC分类号： H01L27/15
CPC分类号： H01S5/0261 , H01L25/167 , H01L27/32 , H01L2924/0002 , H01S5/36 , H01S5/4025 , H01L2924/00
摘要： An optoelectronic module (1) comprises a supporting substrate layer (10) encompassing several circuits (200) that have been previously structured into or onto the supporting substrate layer (10) on the wafer level in front-end processes. Light emitting diodes (100), the emission characteristics, brightness, and color of which are controlled by the circuits (200) integrated into/onto the supporting substrate layer (10), are arranged on the supporting substrate layer (10). By interconnecting several optoelectronic modules (1, 2, 3), module arrangements are created which have an extremely high degree of packing density and excellent properties in respect of color fidelity and dimmability. The individual optoelectronic modules of such a module arrangement can be adjusted to each other or to the surroundings in an autonomous or coupled manner.
摘要翻译：一种光电模块（1）包括与各种电路（200），其已在或在前端工艺在晶片级平面载体基板层（10）上被预结构化的载体基板层（10）。在载体基材层（10）是发光二极管（100），布置成控制所述支撑基板层（10）的电路（200）上的集成在/的辐射图案，亮度和颜色。通过互连多个光电模块（1，2，3）中创建模块组件最高密度与色彩保真度和调光方面具有极好的性能。这样的模块化布置的各个光电子模块可以是自主或耦合，坐标，或对周围环境。

5. 发明专利

DE102009019161A1 Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode 未知
公开(公告)号：DE102009019161A1
公开(公告)日：2010-11-04
申请号：DE102009019161
申请日：2009-04-28
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： GROLIER VINCENT , AHLSTEDT MAGNUS , AHLSTEDT MIKAEL , EISSLER DIETER
IPC分类号： H01L33/00
摘要： Es wird eine Leuchtdiode angegeben, mit - einem Halbleiterkörper (1), wobei der Halbleiterkörper (1) einen aktiven, zur Strahlungserzeugung vorgesehenen Bereich (11) umfasst, - einem Trägerkörper (2), der an einer Oberseite (1a) des Halbleiterkörpers (1) am Halbleiterkörper (1) befestigt ist, wobei der Trägerkörper (2) ein Lumineszenzkonversionsmaterial umfasst, - einer Spiegelschicht (3), die an einer der Oberseite (1a) abgewandten Unterseite (1b) des Halbleiterkörpers (1) auf den Halbleiterkörper (1) aufgebracht ist, und - zwei Kontaktschichten (4a, 4b), wobei eine erste (4a) der Kontaktschichten mit einem n-leitenden Bereich (13) des Halbleiterkörpers (1) und eine zweite der Kontaktschichten (4b) mit einem p-leitenden Bereich (12) des Halbleiterkörpers (1) elektrische leitend verbunden ist.

6. 发明专利

DE102008049777A1 未知
公开(公告)号：DE102008049777A1
公开(公告)日：2009-11-26
申请号：DE102008049777
申请日：2008-09-30
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： EISSLER DIETER , HERRMANN SIEGFRIED
IPC分类号： H01L25/16 , F21K99/00 , H01L23/60 , H01L27/04 , H01L33/00 , H01L51/50 , H05B37/02
摘要： An optoelectronic module includes a layer structure having a plurality of semiconductor layers including a substrate layer, a first layer arrangement and a second layer arrangement, wherein 1) the first layer arrangement has a light-emitting layer arranged on the substrate layer, 2) the second layer arrangement contains at least one circuit that controls an operating state of the light-emitting layer, and 3) the second layer arrangement is arranged on the substrate layer and/or surrounded by the substrate layer.

7. 发明专利

DE102007054039A1 LED for use in e.g. chip array, has light converter provided with fluid for light conversion, converter material present in light converter, and semiconductor chip with emission surface on which light produced by chip is emitted 未知
公开(公告)号：DE102007054039A1
公开(公告)日：2009-03-19
申请号：DE102007054039
申请日：2007-11-13
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： HERRMANN SIEGFRIED , EISSLER DIETER
IPC分类号： H01L25/075 , H01L33/50
摘要： The LED has a light converter (5) provided with a fluid (6) for light conversion. A converter material is present in the light converter and distributed in the fluid as heterogeneous material mixture. A semiconductor chip (1) includes an emission surface (4) on which the light produced by the chip is emitted. The light converter is connected with a fluid reservoir (9). A pump (11) is arranged in a fluid circuit between the light converter and the fluid reservoir. A fluid flow is produced in an active manner through the pump. The light converter is coupled with a heat pipe. An independent claim is also included for a method for adjustment of chromaticity coordinate during manufacturing of an LED.

8. 发明专利

DE102004060358A1 未知
公开(公告)号：DE102004060358A1
公开(公告)日：2006-04-13
申请号：DE102004060358
申请日：2004-12-15
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： WAITL GUENTER , KRAEUTER GERTRUD , HAHN BERTHOLD , BRUNNER HERBERT , HAERLE VOLKER , JAEGER HARALD , EISSLER DIETER
IPC分类号： H01L33/50
摘要： The invention relates to a method of making LED chips provided with a luminescence conversion material containing at least one phosphor. In the method, a layer composite is prepared that includes an LED layer sequence for a multiplicity of LED chips and comprises on a main surface at least one electrical contact surface for each LED chip, for electrically connecting said chip. A layer of adhesion promoter is applied to the main surface and selectively removed from at least portions of the contact surfaces. At least one phosphor is then applied to the main surface. Alternatively, a luminescence conversion material is applied to the main surface and selectively removed from at least portions of the contact surfaces. The invention also relates to an LED chip provided with a luminescence conversion material.

9. 发明专利

DE102008047579A1 未知
公开(公告)号：DE102008047579A1
公开(公告)日：2010-04-15
申请号：DE102008047579
申请日：2008-09-17
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： HERRMANN SIEGFRIED , EISSLER DIETER
IPC分类号： H01S5/02 , H01L25/075
摘要： A luminous means includes a first group of semiconductor chips and a second group of semiconductor chips, each group includes at least one semiconductor chip, wherein the first and second groups of semiconductor chips are arranged laterally alongside one another at least in part with respect to a main emission direction of the luminous means, and a third group of semiconductor chips which includes at least one semiconductor chip and is disposed downstream of the first and the second group with respect to the main emission direction, wherein each group of semiconductor chips emits electromagnetic radiation in wavelength ranges that differ from one another in pairs, radiation emitted by the third group of semiconductor chips has the shortest-wave wavelength range, radiation emitted by the first and second group of semiconductor chips at least partly passes into the at least one semiconductor chip of the third group, and mixed radiation is emitted by an emission area of the luminous means.

10. 发明专利

DE102008046854A1 Machining surfaces of substrates, which have first and second surface, comprises treating first surface of the substrate with etching medium, so that part of the first surface is removed, and applying leveling material on the first surface 未知
公开(公告)号：DE102008046854A1
公开(公告)日：2010-03-18
申请号：DE102008046854
申请日：2008-09-12
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： EISSLER DIETER , FISCHER HELMUT
IPC分类号： C30B33/10 , C30B33/00 , H01L21/306 , H01L33/00
摘要： The process comprises providing a M mX n-substrate (1) with first and second surfaces, where M is aluminum and/or gallium, X is oxygen and/or nitrogen and m and n are numbers of 1-3, treating the first surface of the substrate with an etching medium, so that a part of the first surface of the substrate is removed, applying a leveling material on the first surface of the substrate, where the leveling material possesses chemical or mechanical ablation rate that corresponds to the substrate, and then chemically or mechanically treating the modified first surface. The process comprises providing a M mX n-substrate (1) with first and second surfaces, where M is aluminum and/or gallium, X is oxygen and/or nitrogen and m and n are numbers of 1-3, treating the first surface of the substrate with an etching medium, so that a part of the first surface of the substrate is removed, applying a leveling material on the first surface of the substrate, where the leveling material possesses chemical or mechanical ablation rate that corresponds to the substrate, and then chemically or mechanically treating the modified first surface, so that the leveling material is completely removed and simultaneously the part of the first surface of the substrate is removed. The surface areas of the first surface are removed and have a defective crystal structure. The etching medium acts on the substrate at 200[deg] C. The effect of the etching medium is ended such that the etching medium is separated from the substrate and/or is diluted by a solvent and/or a mixture of the etching medium and substrate is cooled. The second surface of the substrate is partially provided with a protective layer and/or a part of the first surface is provided with the protective layer. The protective layer lies in the form of parallel strips. The first surface is provided with a sacrificial layer, which is removed in the treated step, where the sacrificial layer is obtained by changing the crystal structure of the surface of the substrate. Independent claims are included for: (1) M mX n-substrate for defect-free semiconductor device; (2) a semiconductor device; (3) a method for producing a semiconductor device; and (4) a radiation-emitting device such as LED.

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