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    • 7. 发明申请
    • PLASMA PROCESSING APPARATUS
    • 等离子体加工设备
    • WO2009151009A3
    • 2010-01-28
    • PCT/JP2009060345
    • 2009-06-05
    • TOKYO ELECTRON LTDUNIV TOHOKUHIRAYAMA MASAKIOHMI TADAHIRO
    • HIRAYAMA MASAKIOHMI TADAHIRO
    • H05H1/46H01L21/265H01L21/3065H01L21/31
    • H05H1/46H01J37/32192H01J37/3222H01J37/32238
    • The objective is to improve the processing uniformity for a substrate. Disclosed is a plasma processing apparatus equipped with a metallic processing chamber (4) which houses a substrate (G) being processed with plasma, an electromagnetic source (85) which supplies the electromagnetic waves required to excite a plasma in processing chamber (4), and multiple dielectric bodies (25), which transmit the electromagnetic waves supplied by electromagnetic source (85) into the interior of processing chamber (85) and a portion of which are exposed to the interior of processing chamber (4), on the underside of the cover (3) of processing chamber (4). A metal electrode (27) which is electrically connected to the cover (3) is provided on the underside of the dielectric bodies (25). The portion of dielectric bodies (25) exposed between metal electrode (27) and cover (3) form an essentially polygonal shape when viewed from the interior of processing chamber (4). In addition, the multiple dielectric bodies (25) are disposed with the apex angles of the polygonal shapes adjacent to each other, and surface wave propagation parts which propagate electromagnetic waves are arranged on the underside of cover (3) and the underside of metal electrode (27) exposed to the interior of processing chamber (4).
    • 目的是提高基材的加工均匀性。 公开了一种配备有容纳用等离子体处理的基板(G)的金属处理室(4)的等离子体处理装置,提供在处理室(4)中激发等离子体所需的电磁波的电磁源(85) 以及多个电介质体(25),其将由电磁源(85)提供的电磁波传送到处理室(85)的内部并且其一部分暴露于处理室(4)的内部,位于 处理室(4)的盖(3)。 在电介质体(25)的下侧设置与盖(3)电连接的金属电极(27)。 当从处理室(4)的内部观察时,暴露在金属电极(27)和盖(3)之间的电介质体(25)的部分形成基本上多边形的形状。 此外,多个电介质体(25)以多边形的顶角彼此相邻地设置,并且传播电磁波的表面波传播部分布置在盖(3)的下侧和金属电极的下侧 (27)暴露于处理室(4)的内部。