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2. 发明申请

WO1995027982A1 NON-VOLATILE MEMORY 审中-公开
标题翻译：非易失性存储器
公开(公告)号：WO1995027982A1
公开(公告)日：1995-10-19
申请号：PCT/US1995003758
申请日：1995-03-30
申请人： SYMETRIX CORPORATION , OLYMPUS OPTICAL CO., LTD
发明人： SYMETRIX CORPORATION , OLYMPUS OPTICAL CO., LTD , MCMILLAN, Larry, D. , MIHARA, Takashi , YOSHIMORI, Hiroyuki , GREGORY, John, W. , PAZ DE ARAUJO, Carlos, A.
IPC分类号： G11C11/22
CPC分类号： G11C11/22 , G11C11/223
摘要： An integrated memory unit (12, 600) includes a capacitor (30, 30A), a transistor (32, 32A), and saturation means (29, 25, 14, 62, 43, 15, 61; 71A, 72A) for polarizing the ferroelectric material (50, 74) to saturation with a voltage of less than 10 volts. One electrode (47, 49A) of the capacitor and the transistor gate (33, 33A) are the same conductive member. The other electrode may be formed by extensions (71A, 72A) of the transistor source (71) and drain (77) underlying the gate (33A). The capacitor (230, 30A) has a capacitance Cf, and an area Af, and the transistor (232, 32A) forms a gate capacitor (233, 255, 266) having an area Ag and a gate capacitance Cg, a gate overlap b, and a channel depth a. The ferroelectric material (250, 74) has a dielectric constant ELEMENT f and the gate insulator (268, 86) has a dielectric constant ELEMENT g. The memory unit has the parametric relationships: Cf /= 2a, and ELEMENT g >/= ELEMENT f/8.
摘要翻译：集成存储器单元（12,600）包括电容器（30,30A），晶体管（32,32A）和用于偏振的饱和装置（29,25,14,62,43,15,61,71A，72A）铁电材料（50,74）以小于10伏特的电压饱和。电容器和晶体管栅极（33,33A）的一个电极（47,49A）是相同的导电构件。另一个电极可以由晶体管源极（71）的延伸部（71A，72A）和栅极（33A）下方的漏极（77）形成。电容器（230,30A）具有电容Cf和区域Af，并且晶体管（232,32A）形成具有面积Ag和栅极电容Cg的栅极电容器（233,255,266），栅极重叠b ，以及频道深度a。铁电材料（250,74）具有介电常数ELEMENT f，并且栅极绝缘体（268,86）具有介电常数ELEMENT g。存储单元具有参数关系：Cf <5×Cg，Af / = 2a和ELEMENT g> / = ELEMENT f / 8。

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