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    • 1. 发明授权
    • Tunneling magneto-resistive read head with two-piece free layer
    • 隧道式磁阻读取头,具有两片自由层
    • US06795280B1
    • 2004-09-21
    • US09441901
    • 1999-11-17
    • Dian SongNurul AminSining Mao
    • Dian SongNurul AminSining Mao
    • G11B539
    • B82Y25/00B82Y10/00G11B5/3906G11B2005/3996
    • A method and apparatus for a recording head using a spin-dependent tunneling (SDT) junction. The SDT junction utilizes an aluminum oxide tunnel barrier. The tunnel barrier can be formed to a thickness comparable with a typical Cu spacer layer on a spin valve. With the SDT junction, current is applied perpendicular to the plane of the film. The SDT junctions can have high magneto-resistance up to 40%. The magnetoresistive qualities of a head design incorporating the SDT junction are not directly related to head resistance, head geometry, bias current and film thickness. The method can include forming a spin tunnel barrier by fashioning a stack into a bottom electrode, defining a junction, depositing a layer of insulator, performing a photoprocess, depositing an upper electrode layer and lifting off the top electrode layer to define the electrode. The stack can include a pinned layer, a barrier layer and a free layer. The pinned layer can include NiFe. The barrier layer can include AlOx. The free layer can include Co. The junction can be defined with an ion mill and the insulator can include Al2O3. In addition, the top electrode layer can include Cu.
    • 一种使用自旋相关隧道(SDT)结的记录头的方法和装置。 SDT连接处使用氧化铝隧道屏障。 隧道势垒可以形成为与自旋阀上的典型Cu间隔层相当的厚度。 使用SDT结,电流垂直于膜的平面施加。 SDT结可以具有高达40%的高磁阻。 结合SDT结的头部设计的磁阻性质与磁头电阻,磁头几何形状,偏置电流和膜厚度无直接关系。 该方法可以包括通过将堆叠形成底部电极形成自旋隧道势垒,限定结,沉积绝缘体层,执行光电处理,沉积上部电极层和提起顶部电极层以限定电极。 堆叠可以包括钉扎层,阻挡层和自由层。 钉扎层可以包括NiFe。 阻挡层可以包括AlOx。 自由层可以包括公司。接合点可以用离子磨机定义,绝缘体可以包括Al2O3。 此外,顶部电极层可以包括Cu。