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1. 发明专利

JP2008085120A Position correction coefficient calculating method of charged particle beam drawing apparatus, and position correction coefficient updating method of charged particle beam drawing apparatus 审中-公开
标题翻译：充电粒子束绘图装置的位置校正系数计算方法和充电粒子束绘图装置的位置校正系数更新方法
公开(公告)号：JP2008085120A
公开(公告)日：2008-04-10
申请号：JP2006264190
申请日：2006-09-28
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： HORIUCHI TOMOYUKI , NAKAYAMADA KENSHO , SUZUKI JUNICHI , KUROHORI KENJI
IPC分类号： H01L21/027 , G01B15/00 , H01J37/305
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3045 , H01J2237/20292 , H01J2237/3045
摘要： PROBLEM TO BE SOLVED: To provide a method for reducing a time to be taken for calculating a correction efficient, and to provide a method for updating the correction coefficient.
SOLUTION: The position correction coefficient calculating method of an electron beam drawing apparatus, which is one mode of calculating a coefficient of an approximate expression for correcting a misregistration due to a structure of the electron beam drawing apparatus, comprises the scan step of scanning a plurality of marks arranged regularly in an overall region equivalent to a drawing region of a sample to be drawn on a stage by use of charged particle beams (S102); and the coefficient calculating step of fitting a misregistration amount of each mark scanned in a coordinate system of the drawing apparatus to calculate the coefficient of the approximate expression fitted (S104).
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种减少用于计算校正效率的时间的方法，并提供一种更新校正系数的方法。解决方案：电子束描绘装置的位置校正系数计算方法是计算用于校正由于电子束描绘装置的结构引起的重合失调的近似表达式的系数的一种模式，包括扫描步骤通过使用带电粒子束扫描在与待绘制的样本的绘制区域相当的总体区域中规则地排列的多个标记（S102）; 以及所述系数计算步骤，将在所述绘制装置的坐标系中扫描的每个标记的不对准量拟合，以计算所拟合的近似表达式的系数（S104）。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007294324A Electron gun, and electron beam lithography system using the same 审中-公开
标题翻译：电子枪和电子束光刻系统
公开(公告)号：JP2007294324A
公开(公告)日：2007-11-08
申请号：JP2006122799
申请日：2006-04-27
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： EMI KEIKO , SUZUKI JUNICHI , ABE TAKAYUKI , UMETSU HARUAKI
IPC分类号： H01J37/06 , G03F7/20 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a new electron gun without causing discharge or the like in the vicinity of, in particular, an opening of a Wehnelt even when it is used over a long time, whereas a conventional electron gun has a problem where it causes discharge in the vicinity of, in particular, an opening of a Wehnelt when it is used over a long time.
SOLUTION: This electron gun is composed of a cathode 12, a Wehnelt 13 and an anode 14. The electron gun is structured such that the Wehnelt 13 is formed of conductive metal nitride such as aluminum nitride (AlN), and discharge or the like is prevented from occurring in the vicinity of the opening 13a of the Wehnelt 13.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种新的电子枪，即使长时间使用也不会在Wehnelt附近，特别是其开口附近引起放电等，而传统的电子枪具有特别是在长时间使用时，Wehnelt的开口附近引起放电的问题。解决方案：该电子枪由阴极12，Wehnelt 13和阳极14组成。电子枪的结构使得Wehnelt 13由诸如氮化铝（AlN）的导电金属氮化物形成，并且放电或防止在Wehnelt 13的开口13a附近发生类似现象。（C）2008，JPO＆INPIT

3. 发明专利

JP2012182506A Pattern generation method and charged particle beam-drawing apparatus 有权
标题翻译：图案生成方法和充电颗粒光束装置
公开(公告)号：JP2012182506A
公开(公告)日：2012-09-20
申请号：JP2012145539
申请日：2012-06-28
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： EMI KEIKO , SUZUKI JUNICHI , ABE TAKAYUKI
IPC分类号： H01L21/027 , G03F7/20 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide a pattern generation method and an apparatus for reducing a correction residual in loading effect correction.SOLUTION: A pattern generation method, in one aspect of the present invention, for forming a pattern on a sample 10, comprises: changing a dimension of a design pattern 12 by using an area S of the pattern included in each mesh-like region and a total sum of length of outer circumferential sides of the pattern in a pattern forming region of the sample 10 which is virtually divided into a plurality of the mesh-like regions; and correcting a dimension error of the pattern caused by loading effects. By the present invention, a correction residual in the loading effect correction can be reduced.
摘要翻译：要解决的问题：提供一种用于减小加载效应校正中的校正残差的图案生成方法和装置。解决方案：在本发明的一个方面，用于在样品10上形成图案的图案生成方法包括：通过使用包含在每个网格图案中的图案的面积S来改变设计图案12的尺寸，在样品10的图案形成区域中，图案的外周侧的长度的总和实质上分为多个网状区域; 并校正由加载效应引起的图案的尺寸误差。通过本发明，可以减少装载效果校正中的校正残差。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2007249167A Pattern generation method and charged particle beam-drawing apparatus 有权
标题翻译：图案生成方法和充电颗粒光束装置
公开(公告)号：JP2007249167A
公开(公告)日：2007-09-27
申请号：JP2006263817
申请日：2006-09-28
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： EMI KEIKO , SUZUKI JUNICHI , ABE TAKAYUKI
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31764
摘要： PROBLEM TO BE SOLVED: To provide a pattern generation method and an apparatus for reducing a correction residual in loading effect correction. SOLUTION: The method includes changing a dimension of a design pattern 12 by using an area S of the pattern included in each mesh-like region and the total sum of length of the outer circumferential sides of the pattern in a pattern forming region of a sample 10 which is virtually divided into a plurality of mesh-like regions to correct a dimension error of the pattern caused by loading effects. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于减小加载效应校正中的校正残差的图案生成方法和装置。解决方案：该方法包括通过使用包括在每个网状区域中的图案的面积S和图案形成区域中的图案的外周侧的长度的总和来改变设计图案12的尺寸样本10被虚拟地分成多个网格区域以校正由加载效应引起的图案的尺寸误差。版权所有（C）2007，JPO＆INPIT

5. 发明专利

JP2007220728A Apparatus and method for charged particle beam drawing, and program 有权
标题翻译：充电粒子束图的设备和方法及程序
公开(公告)号：JP2007220728A
公开(公告)日：2007-08-30
申请号：JP2006036639
申请日：2006-02-14
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI JUNICHI , EMI KEIKO , ABE TAKAYUKI
IPC分类号： H01L21/027 , H01J37/305
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00
摘要： PROBLEM TO BE SOLVED: To provide an apparatus and a method for improving fog correction accuracy.
SOLUTION: This drawing apparatus 100 comprises a fog correcting irradiation computing unit 114 for computing amount of fog correcting irradiation including influence of the proximity effect in the electron beam drawing, a proximity effect correcting irradiation computing unit 116 for computing amount of proximity effect correcting irradiation for correcting the proximity effect mentioned above, a correcting irradiation combining unit 118 for combining amount of fog correcting irradiation and amount of proximity effect correcting irradiation, and a drawing unit 150 for drawing a sample 101 on the basis of the synthesized amount of correcting irradiation.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种改善雾化校正精度的装置和方法。解决方案：该绘图装置100包括用于计算包括电子束绘制中的邻近效应的影响的雾化校正照射量的雾化校正照射计算单元114，用于计算邻近效应量的邻近效应校正照射计算单元116 校正用于校正上述接近效应的照射，用于组合雾化校正照射量和接近效应校正照射量的校正照射组合单元118，以及用于根据校正后的合成量绘制样本101的绘图单元150 照射。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007258659A Method and device of charged particle beam lithography 有权
标题翻译：充电粒子束光刻的方法和装置
公开(公告)号：JP2007258659A
公开(公告)日：2007-10-04
申请号：JP2006191148
申请日：2006-07-12
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI JUNICHI , EMI KEIKO , ABE TAKAYUKI , IIJIMA TOMOHIRO
IPC分类号： H01L21/027 , G03F7/20 , H01J37/305
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/31769 , H01J2237/31793
摘要： PROBLEM TO BE SOLVED: To provide a drawing method and a device for drawing with the amount of beam irradiation for executing highly accurate compensation for variation of dimension. SOLUTION: This method of charged particle beam lithography comprises a calculation process for the amount of irradiation for proximity effect correcting (S504), a calculation process for the amount of irradiation for residual correcting for proximity effect correcting (S102), and an irradiation process (S516) for irradiating a sample with a charged particle beam with the amount of irradiation provided by correcting the corrected amount of irradiation such as the amount of irradiation for proximity effect correcting, by using the amount of irradiation for residual correcting for proximity effect correcting. By this invention, the correcting residual can be reduced. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种绘制方法和一种用于对尺寸变化执行高精度补偿的光束照射量进行绘图的装置。解决方案：这种带电粒子束光刻方法包括用于邻近效应校正的照射量的计算处理（S504），用于邻近效应校正的残差校正的照射量的计算处理（S102），以及照射处理（S516），其中通过使用用于邻近效应的残差校正的照射量，通过校正校正后的照射量例如照射量进行邻近效应校正来照射具有带电粒子束的样本的照射量修正。通过本发明，可以减少校正残差。版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2008071928A Drawing pattern resizing method and charged particle beam lithography method 审中-公开
标题翻译：绘图模式和充电粒子束光刻方法
公开(公告)号：JP2008071928A
公开(公告)日：2008-03-27
申请号：JP2006249141
申请日：2006-09-14
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： YASHIMA JUN , SUZUKI JUNICHI , ABE TAKAYUKI
IPC分类号： H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026
摘要： PROBLEM TO BE SOLVED: To provide a resizing method of further high precision drawing pattern against the size variation produced by the loading effect.
SOLUTION: The resizing method of drawing pattern includes a calculation process (S102) to caluculate a first amount of size correction of a pattern to correct the size error of the pattern produced by the loading effect for every small region based on the area density of every small region in which the drawing region of a test piece is virtually devided into a mesh-like shape in a predetermined size, a calculation process (S104) to calculate a second amount of size correction corresponding to the linewidth size of the pattern drawn in the small region, a correction process (S106) to correct the first amount of size correction using the second amount of size correction, and a resizing process (S108) to resize the linewidth size of the pattern using the corrected first amount of correction, Therefore, the resizing of further high precision pattern against the size variation produced by the loading effect can be carried out.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供针对由负载效应产生的尺寸变化的更高精度绘图图案的调整尺寸方法。解决方案：绘图图案的调整尺寸方法包括计算处理（S102），以计算图案的尺寸校正的第一量，以校正基于该区域的每个小区域的装载效果产生的图案的尺寸误差计算处理（S104），计算与试样的图形区域的线宽大小相对应的第二尺寸校正量的计算处理（S104）使用第二量化校正来校正第一量化尺寸校正的校正处理（S106），以及使用校正的第一校正量来调整图案的线宽大小的调整大小处理（S108）因此，可以进行与加载效果产生的尺寸变化的进一步高精度图案的调整。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2007157742A Charged particle beam drawing method, and device 有权
标题翻译：充电颗粒光束绘图方法和装置
公开(公告)号：JP2007157742A
公开(公告)日：2007-06-21
申请号：JP2005346446
申请日：2005-11-30
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI JUNICHI , SUNAOSHI HITOSHI
IPC分类号： H01L21/027
摘要： PROBLEM TO BE SOLVED: To contribute to enhancement of drawing precision by suppressing impairment of dimensional precision due to impact of resist heating.
SOLUTION: In the charged particle beam drawing method for dividing a field region determined by the deflection width of a deflector into a plurality of subfields and shot-drawing a pattern in the subfield, inside of the subfield is divided in the shape of lattice (S1), and the order of shots in the subfield is rearranged such that a next shot position is separated by one or more lattices from a current shot position (S3).
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过抑制由抗蚀剂加热的冲击引起的尺寸精度的损害，有助于提高拉拔精度。解决方案：在用于将由偏转器的偏转宽度确定的场区域划分成多个子场并且在子场中画出图案的带电粒子束拉制方法中，将子场内的区域划分为格子（S1），并且重新排列子场中的镜头顺序，使得下一个镜头位置由当前镜头位置（S3）分离一个或多个镜架。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2008134500A Method of charged particle beam drawing, and method for resizing dimensional change accompanying loading effect 有权
标题翻译：填充粒子束图的方法，以及用于调整与尺寸变化相关的负载效应的方法
公开(公告)号：JP2008134500A
公开(公告)日：2008-06-12
申请号：JP2006321246
申请日：2006-11-29
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： ABE TAKAYUKI , SUZUKI JUNICHI , IIJIMA TOMOHIRO , TSURUMAKI HIDEYUKI
IPC分类号： G03F7/20 , H01L21/027
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J2237/004 , H01J2237/30455 , Y10S430/143
摘要： PROBLEM TO BE SOLVED: To provide a means to determine an exposure dose to correct changes in a line width dimension (critical dimension) after drawing a mask.
SOLUTION: The method of charged particle beam drawing in one embodiment of the present invention includes: a step S102 of inputting pattern data; a step S104 of predicting the total drawing time for drawing the pattern data; a step S108 of acquiring a reference exposure dose after an optional time by using the relation among time periods after the start time of drawing, the total drawing time and reference exposure doses; the step S108 of acquiring a fog effect correction coefficient after an optional time by using the relation among time periods after the start time of drawing, the total drawing time and fogging effect correction coefficients; a step S110 of calculating an exposure dose after the optional time; and a step S114 of drawing in accordance with the exposure dose.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在绘制掩模之后确定曝光剂量以校正线宽度尺寸（临界尺寸）的变化的方法。解决方案：本发明的一个实施例中的带电粒子束描绘的方法包括：输入图案数据的步骤S102; 预测画图数据的绘制总时间的步骤S104; 通过使用绘制开始时间之后的时间段之间的关系，总抽取时间和参考曝光剂量，在任选时间之后获取参考曝光剂量的步骤S108; 通过使用绘制开始时间之后的时间间隔之间的关系，总绘制时间和起雾效果校正系数，在任选时间之后获取雾效应校正系数的步骤S108; 在任选时间之后计算曝光剂量的步骤S110; 以及根据曝光剂量绘制的步骤S114。版权所有（C）2008，JPO＆INPIT

10. 发明专利

JP2008034781A Method and device for charged particle beam drawing, and program 有权
标题翻译：用于充电粒子束图的方法和装置，以及程序
公开(公告)号：JP2008034781A
公开(公告)日：2008-02-14
申请号：JP2006262458
申请日：2006-09-27
申请人： Nuflare Technology Inc , 株式会社ニューフレアテクノロジー
发明人： SUZUKI JUNICHI , EMI KEIKO , ABE TAKAYUKI , IIJIMA TOMOHIRO , TSURUMAKI HIDEYUKI
IPC分类号： H01L21/027 , H01J37/305
摘要： PROBLEM TO BE SOLVED: To provide a technique for finding quantity of radiation for compensating fluctuation of linewidth dimension (CD) after drawing of a mask.
SOLUTION: A charged particle beam drawing method as one embodiment of this invention includes a prediction process (S104) for predicting, based on a pattern data, drawing time for drawing the pattern data; a parameter table preparing process (S106) for acquiring, by using a correlation among a time required from a drawing start time, the predicted drawing time and reference quantity of radiation, a reference quantity of radiation after an optional time, and acquiring, by using a correlation among the time required from the drawing start time, the predicted drawing time and a proximity effect correction coefficient, a proximity effect correction coefficient after an optional time; and a radiation quantity calculation process (S110) for calculating, by using the reference quantity of radiation and the proximity effect correction coefficient after the optional time, a quantity of radiation after an optional time. The quantity of radiation for compensating linewidth dimension (CD) can be found after drawing of the mask after the optional time from the drawing start time.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于在绘制掩模之后找到用于补偿线宽尺寸（CD）的波动的辐射量的技术。解决方案：作为本发明的一个实施例的带电粒子束描绘方法包括：预测处理（S104），用于基于图案数据预测用于绘制图案数据的绘制时间; 参数表准备处理（S106），用于通过使用从绘制开始时间所需的时间，预测绘制时间和参考辐射量之间的相关性，在任选时间之后获取参考辐射量，并且通过使用从绘制开始时间，预测绘制时间和接近效果校正系数所需的时间之间的相关性，可选时间之后的邻近效应校正系数; 以及辐射量计算处理（S110），用于通过使用辐射的参考量和可选时间之后的接近效应校正系数，在任选时间之后计算辐射量。在从绘图开始时间开始的可选时间之后，可以在绘制掩模后找到补偿线宽尺寸（CD）的辐射量。版权所有（C）2008，JPO＆INPIT

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