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1. 发明授权

US06376796B2 Plasma processing system 失效
标题翻译：等离子体处理系统
公开(公告)号：US06376796B2
公开(公告)日：2002-04-23
申请号：US09738989
申请日：2000-12-19
申请人： Noriyoshi Sato , Satoru Iizuka , Tsukasa Yoneyama , Hiroyasu Sato , Unryu Ogawa , Yoshio Tominaga , Yoichiro Numazawa , Yukito Nakagawa
发明人： Noriyoshi Sato , Satoru Iizuka , Tsukasa Yoneyama , Hiroyasu Sato , Unryu Ogawa , Yoshio Tominaga , Yoichiro Numazawa , Yukito Nakagawa
IPC分类号： B23K902
CPC分类号： H01J37/32192 , H05B7/00
摘要： A plasma processing system provided with a vacuum chamber for accommodating a substrate and for generation of plasma in a space in the front of the same, an antenna provided at the vacuum chamber, and a high frequency power source for supplying high frequency power to the antenna. The antenna emits high frequency power, generates plasma inside the vacuum chamber, and processes the surface of the substrate by the plasma. In the plasma processing system, the antenna has a disk-shaped conductor plate having a predetermined thickness. A coaxial waveguide having a folded portion is formed around the disk-shaped conductor plate. The folded portion of the waveguide is provided with a short-circuit 3 dB directional coupler having an impedance matching function. The antenna having the above structure prevents the generation of a standing wave in the high frequency wave propagation path from the high frequency power source to the vacuum chamber and generates high density plasma by supply of a large power. Due to this, processing of a large area substrate becomes possible.
摘要翻译：一种等离子体处理系统，其具有用于容纳基板的真空室和用于在其前部的空间中产生等离子体，设置在真空室处的天线以及用于向天线提供高频功率的高频电源。天线发射高频功率，在真空室内产生等离子体，并通过等离子体处理衬底的表面。在等离子体处理系统中，天线具有预定厚度的盘状导体板。在盘形导体板周围形成具有折叠部分的同轴波导。波导的折叠部分设置有具有阻抗匹配功能的短路3dB定向耦合器。具有上述结构的天线防止在从高频电源到真空室的高频波传播路径中产生驻波，并通过大功率的供给产生高密度等离子体。由此，能够对大面积基板进行加工。

2. 发明授权

US08066894B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08066894B2
公开(公告)日：2011-11-29
申请号：US11886529
申请日：2006-03-14
申请人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
发明人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
IPC分类号： B44C1/22
CPC分类号： H01L21/02236 , C23C16/50 , C23F1/00 , C23F1/08 , H01L21/0223 , H01L21/02233 , H01L21/02238 , H01L21/02252 , H01L21/28247 , H01L21/28273
摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.
摘要翻译：可以适当地氧化基板，同时抑制基板的氧化。本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

3. 发明申请

US20080206968A1 Manufacturing method of semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20080206968A1
公开(公告)日：2008-08-28
申请号：US11987893
申请日：2007-12-05
申请人： Unryu Ogawa
发明人： Unryu Ogawa
IPC分类号： H01L21/203
CPC分类号： H01L21/02247 , H01L21/02252 , H01L21/02422 , H01L21/02532 , H01L21/02667 , H01L21/28202 , H01L21/3144 , H01L21/3185 , H01L21/3211 , H01L29/513 , H01L29/518
摘要： To create a laminated film of a silicon oxide film and a silicon nitride film, with large current driving force and large dielectric constant. A manufacturing method of a semiconductor device includes: forming an amorphous silicon film on the silicon oxide film; and forming a single crystal silicon film by annealing the amorphous silicon film.
摘要翻译：为了制造具有大电流驱动力和大介电常数的氧化硅膜和氮化硅膜的叠层膜。半导体器件的制造方法包括：在氧化硅膜上形成非晶硅膜; 以及通过退火所述非晶硅膜形成单晶硅膜。

4. 发明授权

US08486222B2 Substrate processing apparatus and method of manufacturing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08486222B2
公开(公告)日：2013-07-16
申请号：US13239902
申请日：2011-09-22
申请人： Tokunobu Akao , Unryu Ogawa , Masahisa Okuno , Shinji Yashima , Atsushi Umekawa , Kaichiro Minami
发明人： Tokunobu Akao , Unryu Ogawa , Masahisa Okuno , Shinji Yashima , Atsushi Umekawa , Kaichiro Minami
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/67115 , H01L21/02181 , H01L21/02189 , H01L21/28194 , H01L21/3105 , H01L21/67109 , H01L21/68792 , H01L29/517
摘要： A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.
摘要翻译：基板处理装置包括：处理基板的处理室，设置在处理室内的基板支撑部件，以支撑基板;设置在处理室外部的微波发生器;波导发射端口，被配置为提供由微波产生的微波发生器进入处理室，其中波导发射端口的中心位置偏离支撑在衬底支撑构件上的衬底的中心位置，并且波导发射端口面向支撑在衬底支撑件上的衬底的前表面的一部分以及控制单元，被配置为相对于所述波导发射端口改变所述基板支撑构件在水平方向上的相对位置。

5. 发明申请

US20070062646A1 Method and apparatus for processing substrates 审中-公开
标题翻译：用于处理衬底的方法和装置
公开(公告)号：US20070062646A1
公开(公告)日：2007-03-22
申请号：US11601697
申请日：2006-11-20
申请人： Unryu Ogawa , Tetsuya Takagaki , Akinori Ishii , Tatsushi Ueda , Takayuki Sato
发明人： Unryu Ogawa , Tetsuya Takagaki , Akinori Ishii , Tatsushi Ueda , Takayuki Sato
IPC分类号： H01L21/306
CPC分类号： H01J37/3244 , H01J2237/335 , H01L21/31116 , H01L21/67069
摘要： A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.
摘要翻译：基板处理装置包括处理室和气体供给管线，其中包括由等离子体放电激活的第二气体激活的第一气体的天然氧化物膜去除气体通过气体供给管线供给到处理室，以去除天然气氧化膜，并且其中所述第一气体和所述第二气体沿着第一方向和第二方向被供应到所述气体供应管线，并且所述第一和第二方向之间的角度范围为约90°至180°。

6. 发明申请

US20090169768A1 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20090169768A1
公开(公告)日：2009-07-02
申请号：US12320767
申请日：2009-02-04
申请人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
发明人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
IPC分类号： H05H1/24 , C23C16/54
CPC分类号： H01L21/02236 , C23C16/50 , C23F1/00 , C23F1/08 , H01L21/0223 , H01L21/02233 , H01L21/02238 , H01L21/02252 , H01L21/28247 , H01L21/28273
摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.
摘要翻译：可以适当地氧化基板，同时抑制基板的氧化。本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

7. 发明申请

US20080096395A1 Producing Method of Semiconductor Device 审中-公开
标题翻译：半导体器件的生产方法
公开(公告)号：US20080096395A1
公开(公告)日：2008-04-24
申请号：US10594739
申请日：2005-07-27
申请人： Tadashi Terasaki , Unryu Ogawa , Masanori Nakayama
发明人： Tadashi Terasaki , Unryu Ogawa , Masanori Nakayama
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3145 , H01L21/3165 , H01L29/518
摘要： Disclosed is a producing method of a semiconductor device comprising: film thinning a silicon oxide film by heating the silicon oxide film formed after a surface of a silicon substrate is etched by chemical liquid, and one of thermal oxidizing by heating the thinned silicon oxide film to oxidize the silicon oxide film by gas including at least oxygen, and plasma oxidizing the thinned silicon oxide film by plasma discharged gas including at least oxygen.
摘要翻译：本发明公开了一种半导体器件的制造方法，其特征在于，包括：通过加热在硅衬底的表面被化学液体蚀刻后形成的氧化硅膜，使氧化硅膜变薄，将氧化硅薄膜加热而进行热氧化，通过至少包含氧的气体氧化氧化硅膜，以及通过至少包括氧的等离子体排放气体等离子体氧化该薄化的氧化硅膜。

8. 发明申请

US20070298622A1 Producing Method of Semiconductor Device 有权
标题翻译：半导体器件的生产方法
公开(公告)号：US20070298622A1
公开(公告)日：2007-12-27
申请号：US11664287
申请日：2005-10-31
申请人： Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
发明人： Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
IPC分类号： H01L21/318 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28273 , H01J37/32678 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31662
摘要： Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.
摘要翻译：公开了一种半导体器件的制造方法，包括形成闪光器件的隧道绝缘膜的步骤，该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜氮化和热氮化，等离子体氮化通过使用通过等离子体激活的气体进行氮化处理，所述气体通过等离子体喷射，所述气体包括其化学式中具有至少氮原子的第一化合物的第一气体，并且使用热进行氮化处理通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氮氧化硅膜的第二氮化步骤，热氮化。

9. 发明授权

US08334215B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08334215B2
公开(公告)日：2012-12-18
申请号：US12320767
申请日：2009-02-04
申请人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
发明人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
IPC分类号： H01L21/302
CPC分类号： H01L21/02236 , C23C16/50 , C23F1/00 , C23F1/08 , H01L21/0223 , H01L21/02233 , H01L21/02238 , H01L21/02252 , H01L21/28247 , H01L21/28273
摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen(O2) or oxygen/containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.
摘要翻译：可以适当地氧化基板，同时抑制基板的氧化。本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

10. 发明授权

US07045447B2 Semiconductor device producing method and semiconductor device producing apparatus including forming an oxide layer and changing the impedance or potential to form an oxynitride 有权
标题翻译：半导体器件制造方法和半导体器件制造装置包括形成氧化物层并改变阻抗或电位以形成氧氮化物
公开(公告)号：US07045447B2
公开(公告)日：2006-05-16
申请号：US10396323
申请日：2003-03-26
申请人： Unryu Ogawa , Naoya Yamakado , Tadashi Terasaki , Shinji Yashima
发明人： Unryu Ogawa , Naoya Yamakado , Tadashi Terasaki , Shinji Yashima
IPC分类号： H01L21/3205 , H01L21/4763 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02164 , C23C8/36 , C23C16/24 , C23C16/45565 , C23C16/5093 , C23C16/56 , H01L21/0214 , H01L21/02238 , H01L21/02332 , H01L21/0234 , H01L21/28202
摘要： A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member disposed around the processing chamber, comprises forming an oxide film on the substrate, and thereafter, by changing a high frequency impedance of the substrate-supporting body, continuously forming an oxynitride film by nitriding the oxide film by activated species of nitrogen which are activated by plasma.
摘要翻译：一种使用等离子体处理装置的半导体器件制造方法，包括处理室，在处理室中支撑基板的基板支撑体和设置在处理室周围的圆筒形电极和力线形成部件的磁力线，包括成形然后通过改变衬底支撑体的高频阻抗，然后通过由等离子体活化的活性氮的氮氧化氧化膜，连续地形成氮氧化物膜。

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