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1. 发明授权

US06250268B1 Cam chain guide attachment structure 失效
标题翻译：凸轮链导轨附件结构
公开(公告)号：US06250268B1
公开(公告)日：2001-06-26
申请号：US09432089
申请日：1999-11-02
申请人： Noritoshi Iwase , Yoshihiro Tezuka , Katsunori Takahashi , Toru Iizuka
发明人： Noritoshi Iwase , Yoshihiro Tezuka , Katsunori Takahashi , Toru Iizuka
IPC分类号： F16H718
CPC分类号： F16H7/18 , F01L1/02 , F01L1/022
摘要： To effectively reduce noise caused by an attachment part of a cam chain guide without increasing a pressing force of a cam chain tensioner more than is necessary. A cam chain guide for slidably guiding a cam chain at a valve gear of a four cycle engine is made of resin. An attachment hole for an attachment bolt is provided at an attachment end section for the crankcase. Side surface projections are provided equally spaced at the periphery of an attachment surface surrounding the attachment hole so as to project from a normal surface. Annular recesses are formed at the peripheries of each of the side surface projections. Furthermore, inner surface projections are provided at the inner peripheral surface of the attachment hole equally spaced about the periphery so as to project in a central direction.
摘要翻译：为了有效地降低由凸轮链导向件的安装部分引起的噪音，而不会增加凸轮链张紧器的压力大于所需的压力。用于在四冲程发动机的阀齿轮处可滑动地引导凸轮链的凸轮链导轨由树脂制成。用于安装螺栓的附接孔设置在用于曲轴箱的附接端部。侧表面突起在围绕附接孔的附接表面的周边处等距设置，以从正常表面突出。在每个侧面突起的周边形成环形凹部。此外，内表面突起设置在围绕周边等间隔的附接孔的内周面上，以沿中心方向突出。

2. 发明申请

US20070158636A1 Detecting and characterizing mask blank defects using angular distribution of scattered light 失效
标题翻译：使用散射光角分布检测和表征掩模毛坯缺陷
公开(公告)号：US20070158636A1
公开(公告)日：2007-07-12
申请号：US11323258
申请日：2005-12-30
申请人： Yoshihiro Tezuka
发明人： Yoshihiro Tezuka
IPC分类号： H01L29/06
CPC分类号： G03F1/84 , B82Y10/00 , B82Y40/00 , G01N21/4788 , G01N2021/8822 , G01N2021/95676 , G03F1/24
摘要： An embodiment of the present invention is a technique to inspect defects in mask blanks. A first iris diaphragm is located at an illumination source to limit an illumination angle of light emitted from the illumination source. A scattering limit unit is located at exit of a dark field optical unit to limit scattering angle of the light scattered after reflecting from a mask blank. A defect analyzer is optically coupled to the dark field optical unit to generate an angular distribution of the scattered light. The angular distribution is used to characterize criticality of a defect found on the mask blank.
摘要翻译：本发明的一个实施例是一种检查掩模毛坯中的缺陷的技术。第一光阑位于照明源处，以限制从照明源发射的光的照射角度。散射极限单元位于暗场光学单元的出口处，以限制从掩模坯料反射后散射的光的散射角。缺陷分析仪光耦合到暗场光学单元以产生散射光的角分布。角分布用于表征掩模空白上发现的缺陷的临界性。

3. 发明授权

US07220969B2 Mask blanks inspection tool 有权
标题翻译：面罩毛坯检查工具
公开(公告)号：US07220969B2
公开(公告)日：2007-05-22
申请号：US11299202
申请日：2005-12-09
申请人： Yoshihiro Tezuka , Masaaki Ito
发明人： Yoshihiro Tezuka , Masaaki Ito
IPC分类号： G01J1/42
CPC分类号： G01N21/9505 , G01N21/47 , G01N21/9501 , G01N2021/8822 , G01N2021/95676
摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.
摘要翻译：实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

4. 发明申请

US20060054836A1 MASK BLANKS INSPECTION METHOD AND MASK BLANK INSPECTION TOOL 失效
标题翻译： MASK BLANKS检测方法和MASK BLANK检测工具
公开(公告)号：US20060054836A1
公开(公告)日：2006-03-16
申请号：US10971786
申请日：2004-10-21
申请人： Yoshihiro Tezuka , Masaaki Ito
发明人： Yoshihiro Tezuka , Masaaki Ito
IPC分类号： G01N21/55
CPC分类号： G01N21/9505 , G01N21/47 , G01N21/9501 , G01N2021/8822 , G01N2021/95676
摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.
摘要翻译：实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

5. 发明授权

US6004872A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6004872A
公开(公告)日：1999-12-21
申请号：US959845
申请日：1997-10-29
申请人： Yoshihiro Tezuka , Kunihiro Tada
发明人： Yoshihiro Tezuka , Kunihiro Tada
IPC分类号： C23C16/10 , H01L21/28 , H01L21/285 , H01L21/336 , H01L29/78 , H01L21/3205
CPC分类号： H01L21/28052 , C23C16/10 , H01L21/28518 , H01L29/665
摘要： A method of manufacturing a semiconductor device, comprises the steps of, preparing a silicon substrate having a source region, a drain region, a gate electrode and an SiO.sub.2 film formed on one surface, depositing titanium on the one surface of the silicon substrate by CVD using a high frequency plasma of a low density to form a TiSi.sub.2 layer having a C54 crystal phase, so that the TiSi.sub.2 layer covers the source and drain regions and gate electrode, and a Ti layer covers the SiO.sub.2 film. The Ti layer formed on the SiO.sub.2 film is removed by a selective etching.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：制备具有在一个表面上形成的源极区，漏极区，栅电极和SiO 2膜的硅衬底，通过CVD在硅衬底的一个表面上沉积钛使用低密度的高频等离子体形成具有C54结晶相的TiSi 2层，使得TiSi 2层覆盖源极和漏极区域和栅极电极，并且Ti层覆盖SiO 2膜。通过选择性蚀刻除去形成在SiO 2膜上的Ti层。

6. 发明授权

US07679731B2 Detecting and characterizing mask blank defects using angular distribution of scattered light 失效
标题翻译：使用散射光角分布检测和表征掩模毛坯缺陷
公开(公告)号：US07679731B2
公开(公告)日：2010-03-16
申请号：US11323258
申请日：2005-12-30
申请人： Yoshihiro Tezuka
发明人： Yoshihiro Tezuka
IPC分类号： G01N21/00
CPC分类号： G03F1/84 , B82Y10/00 , B82Y40/00 , G01N21/4788 , G01N2021/8822 , G01N2021/95676 , G03F1/24
摘要： An embodiment of the present invention is a technique to inspect defects in mask blanks. A first iris diaphragm is located at an illumination source to limit an illumination angle of light emitted from the illumination source. A scattering limit unit is located at exit of a dark field optical unit to limit scattering angle of the light scattered after reflecting from a mask blank. A defect analyzer is optically coupled to the dark field optical unit to generate an angular distribution of the scattered light. The angular distribution is used to characterize criticality of a defect found on the mask blank.
摘要翻译：本发明的一个实施例是一种检查掩模毛坯中的缺陷的技术。第一光阑位于照明源处，以限制从照明源发射的光的照射角度。散射极限单元位于暗场光学单元的出口处，以限制从掩模坯料反射后散射的光的散射角。缺陷分析仪光耦合到暗场光学单元以产生散射光的角分布。角分布用于表征掩模空白上发现的缺陷的临界性。

7. 发明申请

US20070188743A1 Method and system of defect inspection for mask blank and method of manufacturing semiconductor device using the same 有权
标题翻译：掩模毛坯的缺陷检查方法和系统以及使用其的制造半导体器件的方法
公开(公告)号：US20070188743A1
公开(公告)日：2007-08-16
申请号：US11707127
申请日：2007-02-16
申请人： Toshihiko Tanaka , Tsuneo Terasawa , Yoshihiro Tezuka
发明人： Toshihiko Tanaka , Tsuneo Terasawa , Yoshihiro Tezuka
IPC分类号： G01N21/88 , G01N21/00
CPC分类号： G01N21/956 , B82Y10/00 , B82Y40/00 , G01N2021/8822 , G01N2021/95676 , G03F1/24 , G03F1/84
摘要： Defect detection is performed with two settings, that is, setting of a focus position where a signal intensity obtained from a dot pattern is maximum and setting of a focus position where a signal intensity obtained from a hole pattern is maximum. In addition, defect detection is performed at a predetermined focus position previously set and for the detected defect, the focus position is changed at that position to find a focus position where the signal intensity is maximum. If the focus position is away from a signal light-receiving system, the defect is determined as dot-shaped. If the focus position is close to the signal light-receiving system, the defect is determined as hole-shaped. If the focus position is intermediate of them, the defect is determined as an elongated-shaped.
摘要翻译：通过两种设置执行缺陷检测，即，从点图案获得的信号强度设置为最大的聚焦位置的设置和从孔图案获得的信号强度的最大焦点位置的设置。此外，在预先设定的预定焦点位置执行缺陷检测，对于检测到的缺陷，在该位置改变焦点位置以找到信号强度最大的聚焦位置。如果聚焦位置远离信号光接收系统，则该缺陷被确定为点状。如果聚焦位置靠近信号光接收系统，则将该缺陷确定为孔形。如果焦点位置是它们的中间位置，则将缺陷确定为细长形状。

8. 发明授权

US07005649B1 Mask blanks inspection method and mask blank inspection tool 失效
标题翻译：面罩毛坯检查方法和面罩毛坯检查工具
公开(公告)号：US07005649B1
公开(公告)日：2006-02-28
申请号：US10971786
申请日：2004-10-21
申请人： Yoshihiro Tezuka , Masaaki Ito
发明人： Yoshihiro Tezuka , Masaaki Ito
IPC分类号： G01J1/42
CPC分类号： G01N21/9505 , G01N21/47 , G01N21/9501 , G01N2021/8822 , G01N2021/95676
摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.
摘要翻译：实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

9. 发明授权

US06979408B2 Method and apparatus for photomask fabrication 失效
标题翻译：光掩模制造的方法和装置
公开(公告)号：US06979408B2
公开(公告)日：2005-12-27
申请号：US10334662
申请日：2002-12-30
申请人： Yoshihiro Tezuka , Toshifumi Yokoyama , Tsukasa Abe
发明人： Yoshihiro Tezuka , Toshifumi Yokoyama , Tsukasa Abe
IPC分类号： C23F1/00 , G03F1/00 , G03F1/36 , H01L21/00
CPC分类号： G03F1/36 , G03F1/80
摘要： The invention provides methods and apparatuses for controlling critical dimension (CD) uniformity of a photomask by neutralizing CD variation associated with pattern density and process fluctuation.
摘要翻译：本发明提供了通过中和与图案密度和工艺波动相关联的CD变化来控制光掩模的临界尺寸（CD）均匀性的方法和装置。

10. 发明申请

US20060138338A1 Mask blanks inspection tool 有权
标题翻译：面罩毛坯检查工具
公开(公告)号：US20060138338A1
公开(公告)日：2006-06-29
申请号：US11299202
申请日：2005-12-09
申请人： Yoshihiro Tezuka , Masaaki Ito
发明人： Yoshihiro Tezuka , Masaaki Ito
IPC分类号： G01J1/42
CPC分类号： G01N21/9505 , G01N21/47 , G01N21/9501 , G01N2021/8822 , G01N2021/95676
摘要： Embodiments include determining whether defects exist in an extreme ultraviolet (EUV) light mask blank. Incident EUV light scattered or diffused by abnormalities in the layers of the mask blank may be measured, normalized, and compared to threshold values to determine if and where a defect exists. Normalizing may be performed by dividing a light intensity value for a pixel by the average of light intensity values for one or more rings of surrounding pixels. A defect may be determined by considering whether the normalized intensity value for a pixel is greater than a pixel threshold to identify the pixel is a candidate for a location with a defect; and by determining whether the sum of normalized light intensity values for a block of pixels including the pixel satisfies a pixel block threshold to determine whether the block scatters or diffuses a critical amount of light to identify a defect.
摘要翻译：实施例包括确定在极紫外（EUV）光掩模坯中是否存在缺陷。可以测量，归一化和掩模掩模层中的异常散射或扩散的事件EUV光，并与阈值进行比较，以确定是否存在缺陷以及存在缺陷。归一化可以通过将像素的光强度除以周围像素的一个或多个环的光强度值的平均值来执行。可以通过考虑像素的归一化强度值是否大于像素阈值来识别像素来确定具有缺陷的位置的候选者来确定缺陷; 并且通过确定包括像素的像素块的归一化光强度值的和是否满足像素块阈值，以确定块是散射或扩散临界量的光以识别缺陷。

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