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    • 2. 发明授权
    • Magneto-resistance effect magnetic head
    • 磁阻效应磁头
    • US5661620A
    • 1997-08-26
    • US480792
    • 1995-06-07
    • Norio SaitoKenichi BabaYutaka Soda
    • Norio SaitoKenichi BabaYutaka Soda
    • G11B5/31G11B5/39
    • G11B5/3954G11B5/3903G11B5/3967
    • A magneto-resistance effect magnetic head in which the MR effects of the two MR thin films of a MR device are balanced for suppressing Barkhausen noise and assuring a stabilized output. Between a lower-layer magnetic shield core and an upper layer magnetic shield core is arranged an MR device, made up of two MR thin films such that a distance d.sub.1 between the lower-layer magnetic shield core and the MR thin film is smaller than a distance d.sub.2 between the upper-layer magnetic shield core and the MR thin film. A film thickness t.sub.1 of the MR thin film towards the lower-layer magnetic shield core is set so as to be thinner than a film thickness t.sub.2 of the MR thin film towards the upper-layer magnetic shield core. Preferably, the relation 0.5 3 holds.
    • 一种磁阻效应磁头,其中MR装置的两个MR薄膜的MR效应被平衡以抑制巴克豪森噪声并确保稳定的输出。 在下层磁屏蔽芯和上层磁屏蔽芯之间布置有由两个MR薄膜构成的MR器件,使得下层磁屏蔽芯和MR薄膜之间的距离d1小于 上层磁屏蔽芯和MR薄膜之间的距离d2。 朝向下层磁屏蔽芯的MR薄膜的膜厚度t1被设定为比MR薄膜朝向上层磁屏蔽芯的膜厚度t2薄。 优选地,关系0.5 3的关系成立。
    • 3. 发明授权
    • Magnetic reluctance effect magnetic head with the connection length of
the forward electrode less than the facing length of the magnetic gap
    • 磁阻效应磁头与正向电极的连接长度小于磁隙的面对长度
    • US6130810A
    • 2000-10-10
    • US231513
    • 1994-04-22
    • Takuji ShibataNorio SaitoYutaka Soda
    • Takuji ShibataNorio SaitoYutaka Soda
    • G11B5/39
    • G11B5/3948G11B5/3903
    • A magnetic reluctance effect magnetic head in which a forward side electrode is stacked on at least the surface of a magnetic reluctance effect element facing a magnetic recording medium, and in which an upper magnetic pole is stacked on the forward side electrode for facing the magnetic reluctance effect element. A connecting length L1 between the magnetic reluctance effect element and the forward side electrode is shorter than a facing length L2 over which the upper magnetic pole and the magnetic reluctance effect element face each other via a magnetic gap G. The upper magnetic pole and the magnetic reluctance effect element have an area in which the upper magnetic pole and the magnetic reluctance effect element face each other over a distance g2 larger than a magnetic gap length g1 of the magnetic gap G. The upper magnetic pole may be formed to be progressively spaced apart from the magnetic reluctance effect element by being angled 30.degree. relative to the magnetic reluctance effect element, and the distance g2 may be progressively increased. With the magnetic reluctance effect magnetic head, the playback output may be improved and the magnetic head may be reduced in size and in the power consumption.
    • 一种磁阻效应磁头,其中前侧电极至少层叠在面对磁记录介质的磁阻效应元件的表面上,并且其中上磁极堆叠在用于面对磁阻的前侧电极上 效果元素。 磁阻效应元件和前侧电极之间的连接长度L1比上磁极和磁阻效应元件经由磁隙G彼此面对的面对长度L2短。上磁极和磁 磁阻效应元件具有上磁极和磁阻效应元件在比磁隙G的磁隙长度g1大的距离g2上彼此面对的区域。上磁极可以形成为逐渐间隔开 从磁阻效应元件相对于磁阻效应元件倾斜30度,并且距离g2可以逐渐增加。 利用磁阻效应磁头,可以提高重放输出,并且可以减小磁头的尺寸和功耗。
    • 4. 发明授权
    • Magneto-resistance effect-type magnetic head
    • 磁阻效应型磁头
    • US5825594A
    • 1998-10-20
    • US744639
    • 1996-11-06
    • Koji FukumotoYutaka SodaNorio SaitoTakuji Shibata
    • Koji FukumotoYutaka SodaNorio SaitoTakuji Shibata
    • G11B5/31G11B5/39
    • G11B5/3903G11B5/3153
    • A magneto-resistance effect-type magnetic head according to the present invention can generate a high reproduction output by increasing a quantity of magnetic flux passing across an effective magneto-sensitive zone of a magneto-resistance effect element, while maintaining its inherent functions as a means for preventing unnecessary magnetic flux from entering the MR element or as a recording pole. The magneto-resistance effect-type magnetic head for reproducing signals from a magnetic recording medium, includes a magneto-resistance effect element, upper and lower magnetic layers between which the magneto-resistance effect element is interposed, and a low-permeability magnetic layer provided on at least one of surfaces of the upper and lower magnetic layers which surfaces are opposed to the magneto-resistance effect element, the low-permeability magnetic layer having a magnetic permeability not more than half of a magnetic permeability of the upper or lower magnetic layer.
    • 根据本发明的磁阻效应型磁头可以通过增加穿过磁阻效应元件的有效磁敏区的磁通量产生高再现输出,同时保持其固有功能为 用于防止不必要的磁通量进入MR元件或记录极的装置。 用于再现来自磁记录介质的信号的磁阻效应型磁头包括磁阻效应元件,介于该磁阻效应元件之间的上下磁层和设置有低磁导率磁性层 在与磁阻效应元件相对的上表面和下磁性层的至少一个表面上,低磁导率磁性层的磁导率不超过上磁层或下磁层的导磁率的一半 。
    • 5. 发明授权
    • Head slider with asymmetric air rails
    • 带不对称导轨的头部滑块
    • US06246545B1
    • 2001-06-12
    • US09025792
    • 1998-02-19
    • Hiroaki OnoNorio SaitoYutaka Soda
    • Hiroaki OnoNorio SaitoYutaka Soda
    • G11B560
    • G11B5/6005G11B21/21
    • To provide a head slider capable of enhancing the electromagnetic transductional characteristic of a magnetic head and a magnetic disk unit provided with the head slider, the head slider provided with a rail on each side and floated over a magnetic disk by air flow, the head slider for reading or recording information from/in the magnetic disk mounted on the rail on one side of the head slider, and the rails formed asymmetrically so that the floated quantity of the rail on the side on which the head slider is mounted is lower than the floated quantity of the rail on the side on which the head slider is not mounted.
    • 为了提供能够提高磁头的电磁传导特性的磁头滑块和设置有磁头滑块的磁盘单元,磁头滑动器在每一侧设置有轨道并通过气流浮动在磁盘上,磁头滑块 用于从安装在磁头滑块的一侧的轨道上的磁盘读取或记录信息,并且不对称地形成轨道,使得轨道在浮动头滑块的一侧上的漂浮量低于 未安装磁头滑动器一侧的导轨的浮动量。
    • 6. 发明授权
    • Magneto-resistance effect magnetic head
    • 磁阻效应磁头
    • US5786965A
    • 1998-07-28
    • US829731
    • 1997-03-31
    • Norio SaitoKenichi BabaYutaka Soda
    • Norio SaitoKenichi BabaYutaka Soda
    • G11B5/31G11B5/39
    • G11B5/3954G11B5/3903G11B5/3967
    • A magneto-resistance effect magnetic head in which the MR effects of the two MR thin films of a MR device are balanced for suppressing Barkhausen noise and assuring a stabilized output. Between a lower-layer magnetic shield core and an upper layer magnetic shield core is arranged an MR device, made up of two MR thin films such that a distance d.sub.1 between the lower-layer magnetic shield core and the MR thin film is smaller than a distance d.sub.2 between the upper-layer magnetic shield core and the MR thin film. A film thickness t.sub.1 of the MR thin film towards the lower-layer magnetic shield core is set so as to be thinner than a film thickness t.sub.2 of the MR thin film towards the upper-layer magnetic shield core. Preferably, the relation 0.5 3 holds.
    • 一种磁阻效应磁头,其中MR装置的两个MR薄膜的MR效应被平衡以抑制巴克豪森噪声并确保稳定的输出。 在下层磁屏蔽芯和上层磁屏蔽芯之间布置有由两个MR薄膜构成的MR器件,使得下层磁屏蔽芯和MR薄膜之间的距离d1小于 上层磁屏蔽芯和MR薄膜之间的距离d2。 朝向下层磁屏蔽芯的MR薄膜的膜厚度t1被设定为比MR薄膜朝向上层磁屏蔽芯的膜厚度t2薄。 优选地,关系0.5 3的关系成立。
    • 9. 发明授权
    • Magneto-resistance effect type magnetic head and magnetic tape apparatus
    • 磁阻效应型磁头和磁带装置
    • US07525774B2
    • 2009-04-28
    • US11229074
    • 2005-09-19
    • Yutaka SodaMasaaki Sekine
    • Yutaka SodaMasaaki Sekine
    • G11B5/33G11B5/127
    • G11B5/534B82Y10/00B82Y25/00G11B5/0086G11B5/3903G11B2005/3996
    • A laser diode capable of being easily mounted and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an n-type semiconductor layer are electrically connected to each other by a bottom portion (a connecting portion) of the hole. Thereby, the p-type electrode has the same potential as the n-type semiconductor layer, and a saturable absorption region is formed in a region corresponding to a current path. Light generated in a gain region (not shown) is absorbed in the saturable absorption region so as to be converted into a current. The current is discharged to a ground via the p-side electrode and the bottom portion, an interaction between the saturable absorption region and the gain region is initiated, and thereby self-oscillation can be produced.
    • 提供能够容易地安装的激光二极管和安装有激光二极管的激光二极管装置。 在半导体层中设置有空穴,p型电极和n型半导体层通过孔的底部(连接部)彼此电连接。 因此,p型电极具有与n型半导体层相同的电位,并且在对应于电流路径的区域中形成可饱和吸收区域。 在增益区域(未示出)中产生的光在可饱和吸收区域中被吸收,以便转换成电流。 电流通过p侧电极和底部放电到地,可饱和吸收区域和增益区域之间的相互作用开始,从而可以产生自振荡。
    • 10. 发明申请
    • Magneto-resistance effect type magnetic head and magnetic tape apparatus
    • 磁阻效应型磁头和磁带装置
    • US20060067011A1
    • 2006-03-30
    • US11229074
    • 2005-09-19
    • Yutaka SodaMasaaki Sekine
    • Yutaka SodaMasaaki Sekine
    • G11B5/127G11B5/33
    • G11B5/534B82Y10/00B82Y25/00G11B5/0086G11B5/3903G11B2005/3996
    • A magneto-resistance effect type magnetic head is disclosed which is high in sensitivity and corrosion resistance. In the head, a spin valve film acting as an magnetic sensing device for detecting a magnetic signal on a magnetic recording medium. The spin valve film is structured such that an antiferromagnetic layer, a fixed magnetization layer whose magnetization direction is fixed by an exchange coupling magnetic field acting between the layers, a free magnetization layer whose magnetization direction varies in response to an external magnetic field, and a nonmagnetic layer for magnetically isolating the fixed magnetization layer and the free magnetization layer are laminated. The nonmagnetic layer is formed from a conductive layer, an interface layer formed on an interface between the fixed magnetization layer and conductive layer, and a second interface layer formed on an interface between the conductive layer and free magnetization layer.
    • 公开了一种具有高灵敏度和耐腐蚀性的磁阻效应型磁头。 在磁头中,作为用于检测磁记录介质上的磁信号的磁感测装置的自旋阀膜。 自旋阀膜被构造成使得反铁磁层,其磁化方向由层之间的交换耦合磁场固定的固定磁化层,其磁化方向响应于外部磁场而变化的自由磁化层和 层叠用于磁性隔离固定磁化层和自由磁化层的非磁性层。 非磁性层由导电层,形成在固定磁化层和导电层之间的界面上的界面层和形成在导电层和自由磁化层之间的界面上的第二界面层形成。