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    • 2. 发明授权
    • Magnetic recording/reproducing apparatus using a GMR head
    • 使用GMR磁头的磁记录/重放装置
    • US06989974B2
    • 2006-01-24
    • US10735090
    • 2003-12-12
    • Hiroki TetsukawaYutaka Soda
    • Hiroki TetsukawaYutaka Soda
    • G11B5/39
    • B82Y10/00G11B5/00813G11B5/0086G11B5/3106G11B5/3903G11B5/40G11B5/53G11B5/78Y10T428/1143Y10T428/115
    • A highly reliable magnetic recording/reproducing apparatus is provided. In the magnetic recording/reproducing apparatus, a spin-valve film is used as a magnetic sensor element for detecting magnetic signals. By defining the corrosion potential of this spin-valve film, and further by specifying the residual magnetization of a magnetic recording medium used as well as the product of the residual magnetization and the thickness of the magnetic layer to a range that is numerically optimal, the occurrence of corrosion on the surface of a magnetoresistive head that contacts the medium is prevented, and the occurrence of electromagnetic discharge is avoided. Further, by numerically specifying the surface resistivity of the metal magnetic thin film of the magnetic recording medium, as well as the roughness of the surface on which the metal magnetic thin film is formed, electrostatic discharge preventing effects and wear resistance are improved.
    • 提供了高度可靠的磁记录/重放装置。 在磁记录/再现装置中,使用自旋阀膜作为用于检测磁信号的磁传感元件。 通过限定该自旋阀膜的腐蚀电位,并且通过将所使用的磁记录介质的剩余磁化强度以及磁性层的剩余磁化强度和厚度的乘积确定为数值最佳的范围, 防止了与介质接触的磁阻头的表面发生腐蚀,避免了电磁放电的发生。 此外,通过数字地确定磁记录介质的金属磁性薄膜的表面电阻率以及形成金属磁性薄膜的表面的粗糙度,提高了防静电效果和耐磨性。
    • 5. 发明授权
    • Magneto-resistance effect type magnetic head and magnetic tape apparatus
    • 磁阻效应型磁头和磁带装置
    • US07525774B2
    • 2009-04-28
    • US11229074
    • 2005-09-19
    • Yutaka SodaMasaaki Sekine
    • Yutaka SodaMasaaki Sekine
    • G11B5/33G11B5/127
    • G11B5/534B82Y10/00B82Y25/00G11B5/0086G11B5/3903G11B2005/3996
    • A laser diode capable of being easily mounted and a laser diode device in which the laser diode is mounted are provided. A hole is disposed in a semiconductor layer, and a p-type electrode and an n-type semiconductor layer are electrically connected to each other by a bottom portion (a connecting portion) of the hole. Thereby, the p-type electrode has the same potential as the n-type semiconductor layer, and a saturable absorption region is formed in a region corresponding to a current path. Light generated in a gain region (not shown) is absorbed in the saturable absorption region so as to be converted into a current. The current is discharged to a ground via the p-side electrode and the bottom portion, an interaction between the saturable absorption region and the gain region is initiated, and thereby self-oscillation can be produced.
    • 提供能够容易地安装的激光二极管和安装有激光二极管的激光二极管装置。 在半导体层中设置有空穴,p型电极和n型半导体层通过孔的底部(连接部)彼此电连接。 因此,p型电极具有与n型半导体层相同的电位,并且在对应于电流路径的区域中形成可饱和吸收区域。 在增益区域(未示出)中产生的光在可饱和吸收区域中被吸收,以便转换成电流。 电流通过p侧电极和底部放电到地,可饱和吸收区域和增益区域之间的相互作用开始,从而可以产生自振荡。
    • 6. 发明申请
    • Magneto-resistance effect type magnetic head and magnetic tape apparatus
    • 磁阻效应型磁头和磁带装置
    • US20060067011A1
    • 2006-03-30
    • US11229074
    • 2005-09-19
    • Yutaka SodaMasaaki Sekine
    • Yutaka SodaMasaaki Sekine
    • G11B5/127G11B5/33
    • G11B5/534B82Y10/00B82Y25/00G11B5/0086G11B5/3903G11B2005/3996
    • A magneto-resistance effect type magnetic head is disclosed which is high in sensitivity and corrosion resistance. In the head, a spin valve film acting as an magnetic sensing device for detecting a magnetic signal on a magnetic recording medium. The spin valve film is structured such that an antiferromagnetic layer, a fixed magnetization layer whose magnetization direction is fixed by an exchange coupling magnetic field acting between the layers, a free magnetization layer whose magnetization direction varies in response to an external magnetic field, and a nonmagnetic layer for magnetically isolating the fixed magnetization layer and the free magnetization layer are laminated. The nonmagnetic layer is formed from a conductive layer, an interface layer formed on an interface between the fixed magnetization layer and conductive layer, and a second interface layer formed on an interface between the conductive layer and free magnetization layer.
    • 公开了一种具有高灵敏度和耐腐蚀性的磁阻效应型磁头。 在磁头中,作为用于检测磁记录介质上的磁信号的磁感测装置的自旋阀膜。 自旋阀膜被构造成使得反铁磁层,其磁化方向由层之间的交换耦合磁场固定的固定磁化层,其磁化方向响应于外部磁场而变化的自由磁化层和 层叠用于磁性隔离固定磁化层和自由磁化层的非磁性层。 非磁性层由导电层,形成在固定磁化层和导电层之间的界面上的界面层和形成在导电层和自由磁化层之间的界面上的第二界面层形成。
    • 7. 发明授权
    • Magnetic reluctance effect magnetic head with the connection length of
the forward electrode less than the facing length of the magnetic gap
    • 磁阻效应磁头与正向电极的连接长度小于磁隙的面对长度
    • US6130810A
    • 2000-10-10
    • US231513
    • 1994-04-22
    • Takuji ShibataNorio SaitoYutaka Soda
    • Takuji ShibataNorio SaitoYutaka Soda
    • G11B5/39
    • G11B5/3948G11B5/3903
    • A magnetic reluctance effect magnetic head in which a forward side electrode is stacked on at least the surface of a magnetic reluctance effect element facing a magnetic recording medium, and in which an upper magnetic pole is stacked on the forward side electrode for facing the magnetic reluctance effect element. A connecting length L1 between the magnetic reluctance effect element and the forward side electrode is shorter than a facing length L2 over which the upper magnetic pole and the magnetic reluctance effect element face each other via a magnetic gap G. The upper magnetic pole and the magnetic reluctance effect element have an area in which the upper magnetic pole and the magnetic reluctance effect element face each other over a distance g2 larger than a magnetic gap length g1 of the magnetic gap G. The upper magnetic pole may be formed to be progressively spaced apart from the magnetic reluctance effect element by being angled 30.degree. relative to the magnetic reluctance effect element, and the distance g2 may be progressively increased. With the magnetic reluctance effect magnetic head, the playback output may be improved and the magnetic head may be reduced in size and in the power consumption.
    • 一种磁阻效应磁头,其中前侧电极至少层叠在面对磁记录介质的磁阻效应元件的表面上,并且其中上磁极堆叠在用于面对磁阻的前侧电极上 效果元素。 磁阻效应元件和前侧电极之间的连接长度L1比上磁极和磁阻效应元件经由磁隙G彼此面对的面对长度L2短。上磁极和磁 磁阻效应元件具有上磁极和磁阻效应元件在比磁隙G的磁隙长度g1大的距离g2上彼此面对的区域。上磁极可以形成为逐渐间隔开 从磁阻效应元件相对于磁阻效应元件倾斜30度,并且距离g2可以逐渐增加。 利用磁阻效应磁头,可以提高重放输出,并且可以减小磁头的尺寸和功耗。
    • 8. 发明授权
    • Magneto-resistance effect-type magnetic head
    • 磁阻效应型磁头
    • US5825594A
    • 1998-10-20
    • US744639
    • 1996-11-06
    • Koji FukumotoYutaka SodaNorio SaitoTakuji Shibata
    • Koji FukumotoYutaka SodaNorio SaitoTakuji Shibata
    • G11B5/31G11B5/39
    • G11B5/3903G11B5/3153
    • A magneto-resistance effect-type magnetic head according to the present invention can generate a high reproduction output by increasing a quantity of magnetic flux passing across an effective magneto-sensitive zone of a magneto-resistance effect element, while maintaining its inherent functions as a means for preventing unnecessary magnetic flux from entering the MR element or as a recording pole. The magneto-resistance effect-type magnetic head for reproducing signals from a magnetic recording medium, includes a magneto-resistance effect element, upper and lower magnetic layers between which the magneto-resistance effect element is interposed, and a low-permeability magnetic layer provided on at least one of surfaces of the upper and lower magnetic layers which surfaces are opposed to the magneto-resistance effect element, the low-permeability magnetic layer having a magnetic permeability not more than half of a magnetic permeability of the upper or lower magnetic layer.
    • 根据本发明的磁阻效应型磁头可以通过增加穿过磁阻效应元件的有效磁敏区的磁通量产生高再现输出,同时保持其固有功能为 用于防止不必要的磁通量进入MR元件或记录极的装置。 用于再现来自磁记录介质的信号的磁阻效应型磁头包括磁阻效应元件,介于该磁阻效应元件之间的上下磁层和设置有低磁导率磁性层 在与磁阻效应元件相对的上表面和下磁性层的至少一个表面上,低磁导率磁性层的磁导率不超过上磁层或下磁层的导磁率的一半 。
    • 9. 发明授权
    • Thin-film magnetic head, magnetoresistance effect magnetic head and
composite magnetic head
    • 薄膜磁头,磁阻效应磁头和复合磁头
    • US5822159A
    • 1998-10-13
    • US833186
    • 1997-04-04
    • Munekatsu FukuyamaYasuo SasakiYutaka SodaKoji FukumotoTetsuo Sekiya
    • Munekatsu FukuyamaYasuo SasakiYutaka SodaKoji FukumotoTetsuo Sekiya
    • G11B5/02G11B5/31G11B5/39G11B5/465G11B5/33G11B5/127
    • G11B5/3967G11B5/3113G11B5/465G11B5/02G11B5/3906G11B5/3912
    • A thin-film magnetic head, a magnetoresistance effect magnetic head and an MR inductive head are disclosed. The thin-film magnetic head has one of thin-film magnetic cores stacked on a substrate and formed of two magnetic films and a non-magnetic film held between them, with a current flowing through the thin-film magnetic core in the direction of hard axis thereof. The magnetoresistance effect magnetic head has one of a pair of shield cores having a magnetoresistive element between them formed of two magnetic films and a non-magnetic film held between them, the magnetoresistive element being electrically connected to the shield core, with a sense current flowing through the shield core. The current flowing through the one shield core via the magnetoresistive element is preferably an AC of decrement amplitude for demagnetizing the shield core along with a DC sense current. Also, this current preferably flows in the direction of hard axis of the shield core so that magnetic properties of the shield core are stabilized or demagnetized by the magnetic field generated in the direction of easy axis. The MR inductive head has a second thin-film magnetic core as a common magnetic body of an MR head and an inductive head on one substrate, formed of two magnetic films and a non-magnetic film held between them, with a current flowing through the second thin-film magnetic core in the direction of hard axis thereof.
    • 公开了一种薄膜磁头,磁阻效应磁头和MR感应头。 薄膜磁头具有堆叠在基板上的薄膜磁芯之一,由两个磁性膜和保持在它们之间的非磁性膜形成,电流沿着硬的方向流过薄膜磁芯 轴。 磁阻效应磁头具有在两个磁膜之间具有磁阻元件的一对屏蔽芯之一和保持在它们之间的非磁性膜之间,磁阻元件电连接到屏蔽芯,感测电流流过 通过屏蔽芯。 通过磁阻元件流过一个屏蔽芯的电流优选为用于使屏蔽芯与DC感测电流一起消磁的递减幅度的AC。 此外,该电流优选沿着屏蔽芯的硬轴的方向流动,使得屏蔽芯的磁性能由容易轴方向产生的磁场稳定或退磁。 MR感应头具有第二薄膜磁芯,作为MR磁头的公共磁体和一个基板上的感应磁头,由两个磁性膜和保持在它们之间的非磁性膜形成,电流流经 第二薄膜磁芯在其硬轴方向上。