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    • 1. 发明授权
    • Semiconductor switching device having plural MOSFET's, GTO's or the like
connected in series
    • 具有串联连接的多个MOSFET,GTO等的半导体开关元件
    • US4692643A
    • 1987-09-08
    • US665132
    • 1984-10-26
    • Norikazu TokunagaHiroshi FukuiKouzou WatanabeHisao AmanoMasayoshi Sato
    • Norikazu TokunagaHiroshi FukuiKouzou WatanabeHisao AmanoMasayoshi Sato
    • H03K17/10H03K17/687H03K17/60
    • H03K17/102
    • A semiconductor switching device includes a row of a plurality of switching elements connected in series. The input terminal of the input-nearest switching element and the output terminal of the output-nearest switching element are connected with the input terminal and output terminal of the semiconductor switching device, respectively. A control signal is applied to the control terminal of the output-nearest switching element. The semiconductor switching device comprises a first plurality of capacitive elements each of which is connected between the output terminal of the output-nearer switching element and the control terminal of the input-nearer switching element of the adjacent switching elements among the switching element row; and a second capacitive element connected between the output terminal and input terminal of the input-nearest switching element. At least the switching elements (S.sub.2 -S.sub.n) have insulating gates, respectively.
    • 半导体开关器件包括串联连接的多个开关元件的一行。 输入最近开关元件的输入端和输出最近开关元件的输出端分别与半导体开关器件的输入端和输出端相连。 控制信号被施加到输出最近的开关元件的控制端子。 半导体开关器件包括第一多个电容元件,每个电容元件连接在开关元件列之间的输出接近开关元件的输出端子和相邻开关元件的输入接近开关元件的控制端子之间; 以及连接在输入 - 最近开关元件的输出端子和输入端子之间的第二电容元件。 至少开关元件(S2-Sn)分别具有绝缘栅极。
    • 3. 发明授权
    • Semiconductor device with floating remote gate turn-off means
    • 半导体器件具有浮动远程门极关闭手段
    • US4646122A
    • 1987-02-24
    • US585606
    • 1984-03-02
    • Shin KimuraHiroshi FukuiHisao AmanoTsutomu YatsuoSaburo OikawaTakahiro Nagano
    • Shin KimuraHiroshi FukuiHisao AmanoTsutomu YatsuoSaburo OikawaTakahiro Nagano
    • H01L29/423H01L29/74
    • H01L29/42304H01L29/42308
    • A semiconductor device such as a transistor or gate turn-off thyristor provided with a control electrode for improving the current cut-off performance, is disclosed in which an emitter layer of a semiconductor substrate is formed of a plurality of strip-shaped regions, a base layer adjacent to the strip-shaped regions is exposed to one principal surface of the semiconductor substrate together with the strip-shaped regions, one main electrode is provided on each strip-shaped region, first and second control electrodes are provided on the base layer, on one and the other sides of each strip-shaped region viewed in the direction of the width thereof, respectively, the other main electrode is provided on the second principal surface of the semiconductor substrate, and a gate terminal is not connected to the first control electrode but connected to the second control electrode, in order to draw out carriers unequally by the first and second control electrodes at a turn-off period. At the initial stage of turn-off action, carriers are drawn out mainly by the second control terminal, and a conductive region contracts so as to be limited to the first control electrode side. At the final stage of turn-off action, carriers are drawn out considerably by the first control electrode, to complete the turn-off action.
    • 公开了一种半导体器件,例如晶体管或栅极截止晶闸管,其设置有用于提高电流截止性能的控制电极,其中半导体衬底的发射极层由多个条形区域形成, 与带状区域相邻的基底层与条状区域一起暴露于半导体衬底的一个主表面,在每个条形区域上设置一个主电极,在基底层上设置第一和第二控制电极 在从宽度方向观察的每个条形区域的一侧和另一侧上分别设置在该半导体衬底的第二主表面上,另一个主电极没有连接到第一 控制电极,但是连接到第二控制电极,以便在关断周期期间由第一和第二控制电极不相等地引出载流子。 在关断动作的初始阶段,主要由第二控制端子引出载体,并且导电区域收缩以限于第一控制电极侧。 在关断动作的最后阶段,载体被第一控制电极显着地拉出,以完成关断动作。
    • 4. 发明授权
    • D.C. Power supply
    • 直流电源
    • US4319317A
    • 1982-03-09
    • US169770
    • 1980-07-17
    • Hiroshi FukuiHisao Amano
    • Hiroshi FukuiHisao Amano
    • G05F1/56H02M1/40H02M3/137H02M7/12H02M7/155H02M7/00
    • H02M1/40H02M3/137
    • A d.c. power supply for use in microwave ovens in which an a.c. voltage having a commercial frequency is rectified and then is chopped at a high frequency by means of a switching element. The resultant voltage is smoothed before being applied to the microwave oven. The voltage level of the commercial frequency voltage is sensed to produce a control pulse the duty ratio of which becomes greater as the voltage level becomes lower. The control pulse is used to control the ON-OFF operation of the switching element. By this circuit configuration, the microwave oven is supplied with a continuously-controllable d.c. voltage having a flat waveform.
    • 一个d.c. 用于微波炉的电源,其中a。 具有商业频率的电压被整流,然后通过开关元件以高频斩波。 在施加到微波炉之前使所得电压平滑。 感测商用频率电压的电压电平,以产生其电压电平变低的占空比变大的控制脉冲。 控制脉冲用于控制开关元件的ON-OFF操作。 通过该电路配置,微波炉提供连续可控的直流。 具有平坦波形的电压。